公开(公告)号：US20240355694A1

公开(公告)日：2024-10-24

申请号：US18366112

申请日：2023-08-07

申请人： YANGTZE MEMORY TECHNOLOGIES CO., LTD.

发明人： Huayang YU ,  Qingyi HUANG ,  Pengzhen ZHANG ,  Zhen PAN ,  Xijin PENG ,  Shuai HU ,  Mengting WANG ,  Qikang HUANG

IPC分类号： H01L23/31 ,  H01L21/56 ,  H10B41/20 ,  H10B41/35 ,  H10B41/40 ,  H10B43/20 ,  H10B43/35 ,  H10B43/40

CPC分类号： H01L23/3157 ,  H01L21/56 ,  H10B41/20 ,  H10B41/35 ,  H10B41/40 ,  H10B43/20 ,  H10B43/35 ,  H10B43/40

摘要： The present disclosure discloses a memory, a fabrication method thereof, and a memory system. According to an example, the memory includes a substrate, a device layer, a padding layer and a buffering protection layer. The device layer is disposed on the substrate, the padding layer is disposed at a first side of the device layer, the buffering protection layer is disposed on a second side of the device layer and a side of the padding layer away from the substrate. The padding layer is disposed to be adjacent to the device layer in a direction parallel to the substrate.