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公开(公告)号：US20240355694A1
公开(公告)日：2024-10-24
申请号：US18366112
申请日：2023-08-07
发明人： Huayang YU , Qingyi HUANG , Pengzhen ZHANG , Zhen PAN , Xijin PENG , Shuai HU , Mengting WANG , Qikang HUANG
IPC分类号： H01L23/31 , H01L21/56 , H10B41/20 , H10B41/35 , H10B41/40 , H10B43/20 , H10B43/35 , H10B43/40
CPC分类号： H01L23/3157 , H01L21/56 , H10B41/20 , H10B41/35 , H10B41/40 , H10B43/20 , H10B43/35 , H10B43/40
摘要： The present disclosure discloses a memory, a fabrication method thereof, and a memory system. According to an example, the memory includes a substrate, a device layer, a padding layer and a buffering protection layer. The device layer is disposed on the substrate, the padding layer is disposed at a first side of the device layer, the buffering protection layer is disposed on a second side of the device layer and a side of the padding layer away from the substrate. The padding layer is disposed to be adjacent to the device layer in a direction parallel to the substrate.
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公开(公告)号：US20240355689A1
公开(公告)日：2024-10-24
申请号：US18348170
申请日：2023-07-06
发明人： Qingyi HUANG , Zhen PAN
CPC分类号： H01L23/18 , H01L24/08 , H01L24/80 , H10B80/00 , H01L2224/08145 , H01L2224/80895 , H01L2224/80896
摘要： Implementations of the present disclosure include a semiconductor structure comprising a stack structure comprising a first stack layer and a second stack layer stacked together, wherein a first region and a second region surrounding the first region are disposed in the stack structure, and a first surface of the first region and a first surface of the second region are coplanar; and a filling structure located on a second surface of the second region, wherein the second surface and the first surface of the second region are respectively two surfaces of the second region disposed oppositely in a first direction that is parallel to a stack layer extending direction of the stack structure.
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