公开(公告)号：US11367640B2

公开(公告)日：2022-06-21

申请号：US16663319

申请日：2019-10-24

Applicant: Yield Engineering Systems, Inc.

Inventor： William Moffat ,  Craig Walter McCoy

IPC: F27D1/18 ,  H01L21/67 ,  H01L21/673 ,  F27D5/00 ,  H01L21/02 ,  H01L21/677 ,  F27D7/06

Abstract: A process chamber system adapted for both vacuum process steps and steps at pressures higher than atmospheric pressure. The chamber door may utilize a double door seal which allows for high vacuum in the gap between the seals such that the sealing force provided by the high vacuum in the seal gap is higher than the opposing forces due to the pressure inside the chamber and the weight of the components.

公开(公告)号：US20210013013A1

公开(公告)日：2021-01-14

申请号：US16888732

申请日：2020-05-31

Applicant: YIELD ENGINEERING SYSTEMS, INC.

Inventor： William Moffat ,  Craig Walter McCoy

IPC: H01J37/32 ,  H01L21/02 ,  H01L21/3065

Abstract: A device and method of spreading plasma which allows for plasma etching over a larger range of process chamber pressures. A plasma source, such as a linear inductive plasma source, may be choked to alter back pressure within the plasma source. The plasma may then be spread around a deflecting disc which spreads the plasma under a dome which then allows for very even plasma etch rates across the surface of a substrate. The apparatus may include a linear inductive plasma source above a plasma spreading portion which spreads plasma across a horizontally configured wafer or other substrate. The substrate support may include heating elements adapted to enhance the etching.

公开(公告)号：US20200234986A1

公开(公告)日：2020-07-23

申请号：US16663319

申请日：2019-10-24

Applicant: Yield Engineering Systems, Inc.

Inventor： William Moffat ,  Craig Walter McCoy

IPC: H01L21/673 ,  H01L21/67 ,  F27D5/00 ,  F27D1/18 ,  H01L21/02 ,  H01L21/677

Abstract: A process chamber system adapted for both vacuum process steps and steps at pressures higher than atmospheric pressure. The chamber door may utilize a double door seal which allows for high vacuum in the gap between the seals such that the sealing force provided by the high vacuum in the seal gap is higher than the opposing forces due to the pressure inside the chamber and the weight of the components.

公开(公告)号：US10147617B2

公开(公告)日：2018-12-04

申请号：US15206318

申请日：2016-07-11

Applicant: YIELD ENGINEERING SYSTEMS, INC.

Inventor： William Moffat

IPC: H01L21/67 ,  B32B27/28

Abstract: A process for the drying, and subsequent imidization, of polyimide precursors which minimizes or eliminates voids and which minimizes or eliminates discoloration. The process uses a sequential set of descending pressure operations that allow for time efficient processing of wafers. The set of descending pressure operations are interspersed with evacuation processes using heated gasses, which combine heating and byproduct evacuation. The process results in layers with reduced or eliminated voiding, discoloration, and solvent retention.

公开(公告)号：USRE49802E1

公开(公告)日：2024-01-16

申请号：US17219215

申请日：2021-03-31

Applicant: Yield Engineering Systems, Inc.

Inventor： William Moffat

IPC: H01L21/67 ,  B32B27/28

CPC classification number: H01L21/67034 ,  B32B27/281 ,  B32B2250/24 ,  B32B2274/00

Abstract: A process for the drying, and subsequent imidization, of polyimide precursors which minimizes or eliminates voids and which minimizes or eliminates discoloration. The process uses a sequential set of descending pressure operations that allow for time efficient processing of wafers. The set of descending pressure operations are interspersed with evacuation processes using heated gasses, which combine heating and byproduct evacuation. The process results in layers with reduced or eliminated voiding, discoloration, and solvent retention.

公开(公告)号：US10319612B2

公开(公告)日：2019-06-11

申请号：US16174260

申请日：2018-10-29

Applicant: YIELD ENGINEERING SYSTEMS, INC.

Inventor： William Moffat

IPC: H01L21/67 ,  B32B27/28

Abstract: A process for the drying, and subsequent imidization, of polyimide precursors which minimizes or eliminates voids and which minimizes or eliminates discoloration. The process uses a sequential set of descending pressure operations that allow for time efficient processing of wafers. The set of descending pressure operations are interspersed with evacuation processes using heated gasses, which combine heating and byproduct evacuation. The process results in layers with reduced or eliminated voiding, discoloration, and solvent retention.