公开(公告)号：US20200013591A1

公开(公告)日：2020-01-09

申请号：US16276040

申请日：2019-02-14

Applicant: YIELD ENGINEERING SYSTEMS, INC.

Inventor： WILLIAM MOFFAT ,  Craig Walter McCoy

IPC: H01J37/32 ,  H01L21/677 ,  H01L21/67 ,  H01L21/673

Abstract: A device and method of spreading plasma which allows for plasma etching over a larger range of process chamber pressures. A plasma source, such as a linear inductive plasma source, may be choked to alter back pressure within the plasma source. The plasma may then be spread around a deflecting disc which spreads the plasma under a dome which then allows for very even plasma etch rates across the surface of a substrate. The apparatus may include a linear inductive plasma source above a plasma spreading portion which spreads plasma across a horizontally configured wafer or other substrate. The substrate support may include heating elements adapted to enhance the etching.

公开(公告)号：US20180308668A1

公开(公告)日：2018-10-25

申请号：US15898178

申请日：2018-02-15

Applicant: YIELD ENGINEERING SYSTEMS, INC.

Inventor： WILLIAM MOFFAT ,  Craig Walter McCoy

IPC: H01J37/32

CPC classification number: H01J37/32623 ,  H01J37/321 ,  H01J37/3244 ,  H01J37/32715 ,  H01J37/32834 ,  H01J2237/3343

Abstract: A device and method of spreading plasma which allows for plasma etching over a larger range of process chamber pressures. A plasma source, such as a linear inductive plasma source, may be choked to alter back pressure within the plasma source. The plasma may then be spread around a deflecting disc which spreads the plasma under a dome which then allows for very even plasma etch rates across the surface of a substrate. The apparatus may include a linear inductive plasma source above a plasma spreading portion which spreads plasma across a horizontally configured wafer or other substrate. The substrate support may include heating elements adapted to enhance the etching.

公开(公告)号：US11367640B2

公开(公告)日：2022-06-21

申请号：US16663319

申请日：2019-10-24

Applicant: Yield Engineering Systems, Inc.

Inventor： William Moffat ,  Craig Walter McCoy

IPC: F27D1/18 ,  H01L21/67 ,  H01L21/673 ,  F27D5/00 ,  H01L21/02 ,  H01L21/677 ,  F27D7/06

Abstract: A process chamber system adapted for both vacuum process steps and steps at pressures higher than atmospheric pressure. The chamber door may utilize a double door seal which allows for high vacuum in the gap between the seals such that the sealing force provided by the high vacuum in the seal gap is higher than the opposing forces due to the pressure inside the chamber and the weight of the components.

公开(公告)号：US20210013013A1

公开(公告)日：2021-01-14

申请号：US16888732

申请日：2020-05-31

Applicant: YIELD ENGINEERING SYSTEMS, INC.

Inventor： William Moffat ,  Craig Walter McCoy

IPC: H01J37/32 ,  H01L21/02 ,  H01L21/3065

Abstract: A device and method of spreading plasma which allows for plasma etching over a larger range of process chamber pressures. A plasma source, such as a linear inductive plasma source, may be choked to alter back pressure within the plasma source. The plasma may then be spread around a deflecting disc which spreads the plasma under a dome which then allows for very even plasma etch rates across the surface of a substrate. The apparatus may include a linear inductive plasma source above a plasma spreading portion which spreads plasma across a horizontally configured wafer or other substrate. The substrate support may include heating elements adapted to enhance the etching.

公开(公告)号：US20200234986A1

公开(公告)日：2020-07-23

申请号：US16663319

申请日：2019-10-24

Applicant: Yield Engineering Systems, Inc.

Inventor： William Moffat ,  Craig Walter McCoy

IPC: H01L21/673 ,  H01L21/67 ,  F27D5/00 ,  F27D1/18 ,  H01L21/02 ,  H01L21/677

Abstract: A process chamber system adapted for both vacuum process steps and steps at pressures higher than atmospheric pressure. The chamber door may utilize a double door seal which allows for high vacuum in the gap between the seals such that the sealing force provided by the high vacuum in the seal gap is higher than the opposing forces due to the pressure inside the chamber and the weight of the components.

公开(公告)号：US20230294190A1

公开(公告)日：2023-09-21

申请号：US18311513

申请日：2023-05-03

Applicant: Yield Engineering Systems, Inc.

Inventor： Tapani Laaksonen ,  M Ziaul Karim ,  Christopher Lane ,  Craig Walter McCoy ,  Ramakanth Alapati

IPC: B23K1/015 ,  B23K1/008 ,  B23K3/08 ,  H01L23/00

CPC classification number: B23K1/015 ,  B23K1/008 ,  B23K3/085 ,  H01L24/742 ,  H01L24/75 ,  B23K2101/42

Abstract: A semiconductor processing apparatus includes a process chamber that defines an enclosure. The enclosure includes a substrate support configured to support a substrate and rotate the substrate about a central axis of the process chamber. The substrate support is also configured to move vertically along the central axis and position the substrate at multiple locations in the enclosure. The apparatus also includes one or more UV lamps configured to irradiate a top surface of the substrate supported on the substrate support.