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公开(公告)号:US09529714B2
公开(公告)日:2016-12-27
申请号:US14559509
申请日:2014-12-03
申请人: Yang-Kon Kim , Bo-Mi Lee , Won-Joon Choi , Guk-Cheon Kim , Daisuke Watanabe , Makoto Nagamine , Young-Min Eeh , Koji Ueda , Toshihiko Nagase , Kazuya Sawada
发明人: Yang-Kon Kim , Bo-Mi Lee , Won-Joon Choi , Guk-Cheon Kim , Daisuke Watanabe , Makoto Nagamine , Young-Min Eeh , Koji Ueda , Toshihiko Nagase , Kazuya Sawada
CPC分类号: G06F12/0802 , G11C11/161 , G11C11/1675 , H01L43/08
摘要: An electronic device includes a semiconductor memory, and the semiconductor memory includes a first magnetic layer having a variable magnetization direction; a second magnetic layer having a pinned magnetization direction; and a tunnel barrier layer interposed between the first magnetic layer and the second magnetic layer, wherein the second magnetic layer includes a ferromagnetic material with molybdenum (Mo) added thereto.
摘要翻译: 电子设备包括半导体存储器,并且半导体存储器包括具有可变磁化方向的第一磁性层; 具有钉扎磁化方向的第二磁性层; 以及插入在所述第一磁性层和所述第二磁性层之间的隧道势垒层,其中所述第二磁性层包括添加有钼(Mo)的铁磁材料。