摘要:
Laser singulation of electronic devices from semiconductor substrates including wafers is performed using up to 3 lasers from 2 wavelength ranges. Using up to 3 lasers from 2 wavelength ranges permits laser singulation of wafers held by die attach film while avoiding problems caused by single-wavelength dicing. In particular, using up to 3 lasers from 2 wavelength ranges permits efficient dicing of semiconductor wafers while avoiding debris and thermal problems associated with laser processing die attach tape.
摘要:
A thin film transistor (TFT) liquid crystal display panel and fabrication method are described. The panel has a data line and a gate line connected with a TFT and formed on the same layer. One of data or gate lines is discontinuous and the other is continuous in a pixel region such that the continuous line bisects the discontinuous line. A passivation film protects the TFT. Contact holes penetrate the passivation film and expose segments of the discontinuous line. A contact electrode connects the segments through the contact holes.