公开(公告)号：US06841210B2

公开(公告)日：2005-01-11

申请号：US10048677

申请日：2001-05-31

申请人： Yasuo Ohama ,  Hiroshi Matsui

发明人： Yasuo Ohama ,  Hiroshi Matsui

IPC分类号： C03B20/00 ,  C03B19/09 ,  C30B15/10 ,  C30B35/00 ,  B65D13/02 ,  B32B17/06 ,  C30B13/14 ,  F27B14/10

CPC分类号： C03B19/095 ,  C30B15/10 ,  C30B35/002 ,  Y02P40/57 ,  Y10T117/10 ,  Y10T117/1016 ,  Y10T117/1024 ,  Y10T428/13 ,  Y10T428/131 ,  Y10T428/1317

摘要： Disclosed is a multilayer structured quartz glass crucible, for pulling up silicon single crystal, whose structure has at least three layers comprising: a translucent outer layer made of naturally occurring quartz glass and having a large number of pores, a translucent intermediate layer, made of synthetic quartz glass and having a large number of pores, and a transparent inner layer substantially free from pores and made of a synthetic quartz glass. Thermal convection within the silicon melt is suppressed by use of the quartz glass crucible, thereby preventing oscillation on the surface of the silicon melt. A method for producing the quartz glas crucible is also disclosed.

摘要翻译： 公开了一种多层结构石英玻璃坩埚，用于拉起单晶硅，其结构至少包括三层，包括：由天然石英玻璃制成的具有大量孔的半透明外层，透明中间层，由 合成石英玻璃，具有大量的孔，以及基本上不含孔的透明内层，由合成石英玻璃制成。 通过使用石英玻璃坩埚来抑制硅熔体内的热对流，从而防止硅熔体表面的振荡。 还公开了一种石英玻璃坩埚的制造方法。

公开(公告)号：US07587912B2

公开(公告)日：2009-09-15

申请号：US10547053

申请日：2004-02-20

申请人： Yasuo Ohama ,  Hiroshi Matsui

发明人： Yasuo Ohama ,  Hiroshi Matsui

IPC分类号： C03B19/09

CPC分类号： C03B19/095 ,  C03B2201/04 ,  C30B15/10

摘要： The present invention refers to a method for producing a quartz glass crucible for use in pulling silicon single crystal, said crucible having at least a double-layer structure comprising a pore-free transparent inner layer and an opaque base body or outer layer having pores, characterized in that at least the base body is formed with a silica powder maintained in a gas having a mixing ratio of 0.0005 to 0.0065 kg/kg (dry gas), and a quartz glass crucible produced by said production method. The obtained crucible has an average OH group concentration of 50 ppm or lower and is capable of suppressing the vibration occurring on the surface of silicon melt during pulling the silicon single crystal. Further the obtained crucible suffers less deformation of the crucible on pulling the silicon single crystal.

摘要翻译： 本发明涉及一种用于制造用于拉硅单晶的石英玻璃坩埚的方法，所述坩埚至少具有包含无孔透明内层和不透明基体或具有孔的外层的双层结构， 其特征在于，至少所述基体由保持在混合比为0.0005〜0.0065kg / kg（干燥气体）的气体中的二氧化硅粉末和由所述制造方法制造的石英玻璃坩埚形成。 得到的坩埚的OH基浓度的平均值为50ppm以下，能够抑制在拉伸硅单晶时在硅熔体表面发生的振动。 此外，所获得的坩埚在拉制硅单晶时受到较小的坩埚变形。

公开(公告)号：US20060174651A1

公开(公告)日：2006-08-10

申请号：US10547053

申请日：2004-02-20

申请人： Yasuo Ohama ,  Hiroshi Matsui

发明人： Yasuo Ohama ,  Hiroshi Matsui

IPC分类号： C03B19/09

CPC分类号： C03B19/095 ,  C03B2201/04 ,  C30B15/10

摘要： The present invention refers to a method for producing a quartz glass crucible for use in pulling silicon single crystal, said crucible having at least a double-layer structure comprising a pore-free transparent inner layer and an opaque base body or outer layer having pores, characterized in that at least the base body is formed with a silica powder maintained in a gas having a mixing ratio of 0.0005 to 0.0065 kg/kg (dry gas), and a quartz glass crucible produced by said production method. The obtained crucible has an average OH group concentration of 50 ppm or lower and is capable of suppressing the vibration occurring on the surface of silicon melt during pulling the silicon single crystal. Further the obtained crucible suffers less deformation of the crucible on pulling the silicon single crystal.

摘要翻译： 本发明涉及一种用于制造用于拉硅单晶的石英玻璃坩埚的方法，所述坩埚至少具有包含无孔透明内层和不透明基体或具有孔的外层的双层结构， 其特征在于，至少所述基体由保持在混合比为0.0005〜0.0065kg / kg（干燥气体）的气体中的二氧化硅粉末和由所述制造方法制造的石英玻璃坩埚形成。 得到的坩埚的OH基浓度的平均值为50ppm以下，能够抑制在拉伸硅单晶时在硅熔体表面发生的振动。 此外，所获得的坩埚在拉制硅单晶时受到较小的坩埚变形。

公开(公告)号：US08555674B2

公开(公告)日：2013-10-15

申请号：US12451753

申请日：2008-05-23

申请人： Yasuo Ohama

发明人： Yasuo Ohama

IPC分类号： C30B15/10

CPC分类号： C03B19/095 ,  C03B32/00 ,  C30B15/10 ,  C30B29/06 ,  C30B35/002 ,  Y02P40/57 ,  Y10T117/10 ,  Y10T117/1032

摘要： A quartz glass crucible for silicon single crystal pulling operation that by a simple arrangement, attains prevention of any collapse onto the inside at a superior edge of straight trunk part; and a process for manufacturing the same. The quartz glass crucible for silicon single crystal pulling operation having a straight trunk part and a bottom part, is characterized in that at least the straight trunk part is provided with a gradient of fictive temperature so that the fictive temperature on the outermost side thereof is 25° C. or more lower than the fictive temperature on the innermost side thereof.

摘要翻译： 一种用于硅单晶拉制操作的石英玻璃坩埚，其通过简单的布置，可以防止在直的主干部分的上边缘处的任何内部折叠; 及其制造方法。 用于具有直的主体部分和底部的用于硅单晶拉制操作的石英玻璃坩埚的特征在于，至少直的主干部分具有假想温度的梯度，使得其最外侧的假想温度为25 ℃或更低于其最内侧的假想温度。

公开(公告)号：US08277559B2

公开(公告)日：2012-10-02

申请号：US10555853

申请日：2004-04-26

申请人： Yasuo Ohama

发明人： Yasuo Ohama

IPC分类号： C30B35/00

CPC分类号： C30B29/06 ,  C03B19/095 ,  C30B15/10 ,  Y10T117/10 ,  Y10T117/1032 ,  Y10T117/1052

摘要： A quartz glass crucible which has a non-transparent outer layer formed through melting a natural silica powder and a transparent layer formed in the inside of the outer layer, wherein the transparent layer comprises a natural quartz layer having a thickness of 0.4 to 5.0 mm transparent layer comprising a synthetic quarts glass is formed thereon in the inside of the crucible in the range of 0.15 to 0.55 L relative to L, which is the distance from the center of the bottom of the inner surface of the quartz glass crucible to the upper end thereof along the inner surface thereof. The quartz glass crucible can be suitably used for suppressing the occurrence of vibration and reducing the generation of roughened face in the surface of a crucible, and thus for pulling up a silicon single crystal with enhanced stability.

摘要翻译： 一种石英玻璃坩埚，其具有通过熔融天然二氧化硅粉末和形成在外层内部的透明层形成的不透明外层，其中透明层包括厚度为0.4至5.0mm透明的天然石英层 在坩埚内部形成有相对于L的0.15〜0.55L的范围内的合成石英玻璃的层，该距离是从石英玻璃坩埚的内表面的底部的中心到上端 沿其内表面。 石英玻璃坩埚可以适当地用于抑制振动的发生和减少坩埚表面中的粗糙面的产生，从而提高稳定性的硅单晶。

公开(公告)号：US07427327B2

公开(公告)日：2008-09-23

申请号：US11536517

申请日：2006-09-28

申请人： Katsuhiko Kemmochi ,  Yasuo Ohama

发明人： Katsuhiko Kemmochi ,  Yasuo Ohama

IPC分类号： C30C35/00

CPC分类号： C03B19/095 ,  C30B15/10 ,  Y10S65/08 ,  Y10T117/10 ,  Y10T117/1068

摘要： A silica glass crucible includes a thin barium-doped inner layer, a stable, bubble-free intermediate layer, and a stable opaque outer layer. The fusion process of the present invention controls the dynamic gas balance at the fusion front where formed grain is melted to dense fused silica. The crucible demonstrates reduced bubble growth during a Czochralski process. As a result of the thin barium-doped layer and the reduced bubble growth, the inner surface of the crucible is uniformly minimally textured during a CZ process. The present crucible is especially suited for intense CZ processes for manufacturing silicon ingots used for solar cells or with silicon that is heavily doped with antimony, boron, or arsenic.

摘要翻译： 石英玻璃坩埚包括薄的钡掺杂内层，稳定的无气泡中间层和稳定的不透明外层。 本发明的融合方法控制熔融前沿处的动态气体平衡，其中形成的晶粒被熔化成致密的熔融二氧化硅。 坩埚在切克劳斯基（Czochralski）工艺中表现出减少的气泡生长。 由于薄的钡掺杂层和减少的气泡生长，坩埚的内表面在CZ工艺期间均匀地最小化。 本坩埚特别适用于制造用于太阳能电池的硅锭或重掺杂锑，硼或砷的硅的强CZ工艺。

公开(公告)号：US20080141929A1

公开(公告)日：2008-06-19

申请号：US11612327

申请日：2006-12-18

申请人： Katsuhiko Kemmochi ,  Yasuo Ohama

发明人： Katsuhiko Kemmochi ,  Yasuo Ohama

IPC分类号： C30B15/10 ,  B22D7/06

CPC分类号： C03B19/095 ,  C03B2201/32 ,  C30B15/10 ,  C30B29/06 ,  Y10T117/10 ,  Y10T117/1032 ,  Y10T117/1052 ,  Y10T117/1072

摘要： A fused glass crucible includes a collar of doped aluminum silica that defines uppermost and outermost surfaces of the crucible. The melt line that defines the surface of molten silicon in the crucible may be substantially at the lower end of the collar or slightly above it. Crystallization of the collar makes it hard and therefore supports the remaining uncrystallized portion of the crucible above the melt line. The melt line may also be below the lower end of the collar, especially if the melt is drawn down or poured early in the process. Because there is little or no overlap or because the overlap does not last long, the doped aluminum collar is not damaged by the heat of from the melt.

摘要翻译： 熔融玻璃坩埚包括限定坩埚的最上表面和最外表面的掺杂铝二氧化硅的环。 限定坩埚中的熔融硅表面的熔体线可以基本上在套环的下端或略高于其上。 轴环的结晶使其变硬，因此支撑坩埚在熔融线之上的剩余未结晶部分。 熔体管线也可以在套环的下端下方，特别是如果熔体在该过程中被提拉或者早期浇注。 因为很少或没有重叠，或者由于重叠不会持续很长时间，所以掺杂的铝合金套环不会被熔体的热量损坏。

公开(公告)号：US20070051296A1

公开(公告)日：2007-03-08

申请号：US11223158

申请日：2005-09-08

申请人： Katsuhiko Kemmochi ,  Robert Mosier ,  Yasuo Ohama

发明人： Katsuhiko Kemmochi ,  Robert Mosier ,  Yasuo Ohama

IPC分类号： C30B15/00 ,  C30B21/06 ,  C30B27/02 ,  C30B28/10 ,  C30B30/04

CPC分类号： C03B19/095 ,  C30B15/10 ,  Y02P40/57 ,  Y10S65/08 ,  Y10S117/90 ,  Y10T117/10

摘要： A silica glass crucible includes a stable, bubble-free inner layer and an opaque outer layer, both layers demonstrating reduced bubble growth during a Czochralski process. When used in the CZ process, little volume change is observed in the crucible wall, and the crucible has little influence on melt level. The present crucible is especially suited for slow silicon ingot pulling with reduced crystalline defects. The fusion process of the present invention controls the dynamic gas balance at the fusion front where formed grain is melted to dense fused silica.

摘要翻译： 石英玻璃坩埚包括稳定的无气泡的内层和不透明的外层，两层都表明在切克劳斯基工艺过程中气泡生长减少。 当在CZ工艺中使用时，在坩埚壁中观察到很小的体积变化，并且坩埚对熔体水平几乎没有影响。 本坩埚特别适用于具有减少的晶体缺陷的缓慢的硅锭拉动。 本发明的融合方法控制熔融前沿处的动态气体平衡，其中形成的晶粒被熔化成致密的熔融二氧化硅。

公开(公告)号：US20100186662A1

公开(公告)日：2010-07-29

申请号：US12752998

申请日：2010-04-01

申请人： Katsuhiko Kemmochi ,  Yasuo Ohama

发明人： Katsuhiko Kemmochi ,  Yasuo Ohama

IPC分类号： C30B15/10

CPC分类号： C03B19/095 ,  C03B2201/32 ,  C30B15/10 ,  C30B29/06 ,  Y10T117/10 ,  Y10T117/1032 ,  Y10T117/1052 ,  Y10T117/1072

摘要： A fused glass crucible includes a collar of doped aluminum silica that defines uppermost and outermost surfaces of the crucible. The melt line that defines the surface of molten silicon in the crucible may be substantially at the lower end of the collar or slightly above it. Crystallization of the collar makes it hard and therefore supports the remaining uncrystallized portion of the crucible above the melt line. The melt line may also be below the lower end of the collar, especially if the melt is drawn down or poured early in the process. Because there is little or no overlap or because the overlap does not last long, the doped aluminum collar is not damaged by the heat of from the melt.

摘要翻译： 熔融玻璃坩埚包括限定坩埚的最上表面和最外表面的掺杂铝二氧化硅的环。 限定坩埚中的熔融硅表面的熔体线可以基本上在套环的下端或略高于其上。 轴环的结晶使其变硬，因此支撑坩埚在熔融线之上的剩余未结晶部分。 熔体管线也可以在套环的下端下方，特别是如果熔体在该过程中被提拉或者早期浇注。 因为很少或没有重叠，或者由于重叠不会持续很长时间，所以掺杂的铝合金套环不会被熔体的热量损坏。

公开(公告)号：US20100132609A1

公开(公告)日：2010-06-03

申请号：US12451753

申请日：2008-05-23

申请人： Yasuo Ohama

发明人： Yasuo Ohama

IPC分类号： C30B15/10 ,  C03B29/00

CPC分类号： C03B19/095 ,  C03B32/00 ,  C30B15/10 ,  C30B29/06 ,  C30B35/002 ,  Y02P40/57 ,  Y10T117/10 ,  Y10T117/1032

摘要： A quartz glass crucible for silicon single crystal pulling operation that by a simple arrangement, attains prevention of any collapse onto the inside at a superior edge of straight trunk part; and a process for manufacturing the same. The quartz glass crucible for silicon single crystal pulling operation having a straight trunk part and a bottom part, is characterized in that at least the straight trunk part is provided with a gradient of fictive temperature so that the fictive temperature on the outermost side thereof is 25° C. or more lower than the fictive temperature on the innermost side thereof.

摘要翻译： 一种用于硅单晶拉制操作的石英玻璃坩埚，其通过简单的布置，可以防止在直的主干部分的上边缘处的任何内部折叠; 及其制造方法。 用于具有直的主体部分和底部的用于硅单晶拉制操作的石英玻璃坩埚的特征在于，至少直的主干部分具有假想温度的梯度，使得其最外侧的假想温度为25 ℃或更低于其最内侧的假想温度。