Method for purifying impure aqueous hydrogen peroxide solution
    1.
    发明授权
    Method for purifying impure aqueous hydrogen peroxide solution 失效
    纯化不纯过氧化氢水溶液的方法

    公开(公告)号:US4999179A

    公开(公告)日:1991-03-12

    申请号:US447521

    申请日:1989-12-07

    IPC分类号: C01B15/013

    CPC分类号: C01B15/0135

    摘要: A method for purifying an impure aqueous hydrogen peroxide solution, which comprises passing an impure aqueous hydrogen peroxide solution through(a) a cation exchange resin layer, a halogen-containing porous resin layer and an anion exchange resin layer in this order, or(b) a halogen-containing porous resin layer, a cation exchange resin layer and an anion exchange resin layer in this order, or(c) a halogen-containing porous resin layer and a cation/anion mixed-bed resin layer in this order to contact said solution with each resin.

    摘要翻译: 一种净化不纯的过氧化氢水溶液的方法,其包括使不纯的过氧化氢水溶液依次通过(a)阳离子交换树脂层,含卤素多孔树脂层和阴离子交换树脂层,或(b )含卤素多孔树脂层,阳离子交换树脂层和阴离子交换树脂层,或(c)含卤多孔树脂层和阳离子/阴离子混合树脂层,以接触 所述溶液与每种树脂。

    Process for purification of hydrogen peroxide
    7.
    发明授权
    Process for purification of hydrogen peroxide 失效
    纯化过氧化氢的方法

    公开(公告)号:US5614165A

    公开(公告)日:1997-03-25

    申请号:US408123

    申请日:1995-03-21

    CPC分类号: C01B15/0135 B01J45/00

    摘要: A process for purification of hydrogen peroxide is provided which comprises contacting an aqueous hydrogen peroxide solution with a chelate resin. According to the process, it is possible to remove impurities in the aqueous hydrogen peroxide solution in high efficiency, and particularly, it is possible to remove iron, aluminum, etc., which are difficult to remove singly by ion exchange resins, up to extremely low concentrations. Highly pure hydrogen peroxide solutions obtained by this invention can suitably used for washing of silicon wafers.

    摘要翻译: 提供了一种用于纯化过氧化氢的方法,其包括使过氧化氢水溶液与螯合树脂接触。 根据该方法,可以高效率地除去过氧化氢水溶液中的杂质,特别是可以除去难以通过离子交换树脂单独除去的铁,铝等,直至极端 低浓度 通过本发明获得的高纯度过氧化氢溶液可适用于硅晶片的洗涤。

    Cleaning solution of semiconductor substrate
    8.
    发明授权
    Cleaning solution of semiconductor substrate 失效
    半导体衬底清洗液

    公开(公告)号:US5302311A

    公开(公告)日:1994-04-12

    申请号:US927282

    申请日:1992-09-24

    CPC分类号: H01L21/02052 C01B15/037

    摘要: In cleaning a semiconductor substrate with a basic aqueous solution of hydrogen peroxide, it is an object to prevent metal impurities adhering to the substrate surface. A cleaning solution of a semiconductor substrate which comprises a basic aqueous solution of a hydrogen peroxide containing a chelating agent having at least two phosphonic acid groups. Preferred chelating agent is 1,2-propylenediamine tetra(methylene phosphonic acid) in amount of 1 ppb to 1000 ppm, together with 0.1 to 20% by weight of hydrogen peroxide and, optionally, 0.1 to 10% by weight of ammonia. Even if the cleaning solution is contaminated with metal impurities, characteristics of semiconductor elements prepared from a substrate are stabilized since no metal impurities adhere on the substrate surface.

    摘要翻译: PCT No.PCT / JP92 / 00219 Sec。 371日期:1992年9月24日 102(e)日期1992年9月24日PCT提交1992年2月28日PCT公布。 出版物WO92 / 16017 日期:1992年9月17日。在用碱性过氧化氢水溶液清洗半导体衬底时,其目的是防止附着在衬底表面上的金属杂质。 一种半导体衬底的清洁溶液,其包含含有具有至少两个膦酸基团的螯合剂的过氧化氢的碱性水溶液。 优选的螯合剂是1,2-丙二胺四(亚甲基膦酸),其量为1ppb至1000ppm,以及0.1至20重量%的过氧化氢和任选的0.1至10重量%的氨。 即使清洗液被金属杂质污染,由于没有金属杂质附着在基板表面上,因此从基板制备的半导体元件的特性也稳定。