公开(公告)号：US20080257581A1

公开(公告)日：2008-10-23

申请号：US12101398

申请日：2008-04-11

申请人： Yasushi MASAGO ,  Ryoichi Ozaki ,  Kouichi Taira

发明人： Yasushi MASAGO ,  Ryoichi Ozaki ,  Kouichi Taira

IPC分类号： H01B5/00

CPC分类号： C23C2/28 ,  C23C2/02 ,  C23C26/02 ,  C23C28/021 ,  C23C28/023 ,  C25D5/10 ,  C25D5/34 ,  C25D5/505 ,  H01R13/03

摘要： A terminal for an engaging type connector includes a punched Cu alloy strip as a base material, a coating formed on the Cu alloy strip by postplating processes and including a Sn layer, and a Cu—Sn alloy layer sandwiched between the base material and the Sn layer. The Sn layer is smoothed by a reflowing process. The terminal has an engaging part and a solder-bonding part, and the surface of a part of the base material corresponding to the engaging part has a surface roughness higher than that of the surface of the base material corresponding to the solder-bonding part. The engaging part has a low frictional property and the solder-bonding part has improved solder wettability.

摘要翻译： 用于接合型连接器的端子包括作为基材的冲孔Cu合金带，通过后处理并包括Sn层在Cu合金带上形成的涂层以及夹在基材和Sn之间的Cu-Sn合金层 层。 Sn层通过回流工艺平滑。 端子具有接合部分和焊接部分，并且对应于接合部分的部分基材的表面的表面粗糙度高于与焊接部分对应的基材表面的表面粗糙度。 接合部具有低摩擦性能，并且焊接部分具有改善的焊料润湿性。

公开(公告)号：US08076582B2

公开(公告)日：2011-12-13

申请号：US12721259

申请日：2010-03-10

申请人： Yasushi Masago ,  Ryoichi Ozaki ,  Kouichi Taira

发明人： Yasushi Masago ,  Ryoichi Ozaki ,  Kouichi Taira

IPC分类号： H01B5/00

CPC分类号： C23C2/28 ,  C23C2/02 ,  C23C26/02 ,  C23C28/021 ,  C23C28/023 ,  C25D5/10 ,  C25D5/34 ,  C25D5/505 ,  H01R13/03

摘要： A terminal for an engaging type connector includes a punched Cu alloy strip as a base material, a coating formed on the Cu alloy strip by postplating processes and including a Sn layer, and a Cu—Sn alloy layer sandwiched between the base material and the Sn layer. The Sn layer is smoothed by a reflowing process. The terminal has an engaging part and a solder-bonding part, and the surface of a part of the base material corresponding to the engaging part has a surface roughness higher than that of the surface of the base material corresponding to the solder-bonding part. The engaging part has a low frictional property and the solder-bonding part has improved solder wettability.

摘要翻译： 用于接合型连接器的端子包括作为基材的冲孔Cu合金带，通过后处理并包括Sn层在Cu合金带上形成的涂层以及夹在基材和Sn之间的Cu-Sn合金层 层。 Sn层通过回流工艺平滑。 端子具有接合部分和焊接部分，并且对应于接合部分的部分基材的表面的表面粗糙度高于与焊接部分对应的基材表面的表面粗糙度。 接合部具有低摩擦性能，并且焊接部分具有改善的焊料润湿性。

公开(公告)号：US20100163277A1

公开(公告)日：2010-07-01

申请号：US12721259

申请日：2010-03-10

申请人： Yasushi Masago ,  Ryoichi Ozaki ,  Kouichi Taira

发明人： Yasushi Masago ,  Ryoichi Ozaki ,  Kouichi Taira

IPC分类号： H01B5/00

CPC分类号： C23C2/28 ,  C23C2/02 ,  C23C26/02 ,  C23C28/021 ,  C23C28/023 ,  C25D5/10 ,  C25D5/34 ,  C25D5/505 ,  H01R13/03

摘要： A terminal for an engaging type connector includes a punched Cu alloy strip as a base material, a coating formed on the Cu alloy strip by postplating processes and including a Sn layer, and a Cu—Sn alloy layer sandwiched between the base material and the Sn layer. The Sn layer is smoothed by a reflowing process. The terminal has an engaging part and a solder-bonding part, and the surface of a part of the base material corresponding to the engaging part has a surface roughness higher than that of the surface of the base material corresponding to the solder-bonding part. The engaging part has a low frictional property and the solder-bonding part has improved solder wettability.

摘要翻译： 用于接合型连接器的端子包括作为基材的冲孔Cu合金带，通过后处理并包括Sn层在Cu合金带上形成的涂层以及夹在基材和Sn之间的Cu-Sn合金层 层。 Sn层通过回流工艺平滑。 端子具有接合部分和焊接部分，并且对应于接合部分的部分基材的表面的表面粗糙度高于与焊接部分对应的基材表面的表面粗糙度。 接合部具有低摩擦性能，并且焊接部分具有改善的焊料润湿性。

公开(公告)号：US07700883B2

公开(公告)日：2010-04-20

申请号：US12101398

申请日：2008-04-11

申请人： Yasushi Masago ,  Ryoichi Ozaki ,  Kouichi Taira

发明人： Yasushi Masago ,  Ryoichi Ozaki ,  Kouichi Taira

IPC分类号： H01B5/00

CPC分类号： C23C2/28 ,  C23C2/02 ,  C23C26/02 ,  C23C28/021 ,  C23C28/023 ,  C25D5/10 ,  C25D5/34 ,  C25D5/505 ,  H01R13/03

摘要： A terminal for an engaging type connector includes a punched Cu alloy strip as a base material, a coating formed on the Cu alloy strip by postplating processes and including a Sn layer, and a Cu—Sn alloy layer sandwiched between the base material and the Sn layer. The Sn layer is smoothed by a reflowing process. The terminal has an engaging part and a solder-bonding part, and the surface of a part of the base material corresponding to the engaging part has a surface roughness higher than that of the surface of the base material corresponding to the solder-bonding part. The engaging part has a low frictional property and the solder-bonding part has improved solder wettability.

摘要翻译： 用于接合型连接器的端子包括作为基材的冲孔Cu合金带，通过后处理并包括Sn层在Cu合金带上形成的涂层以及夹在基材和Sn之间的Cu-Sn合金层 层。 Sn层通过回流工艺平滑。 端子具有接合部分和焊接部分，并且对应于接合部分的部分基材的表面的表面粗糙度高于与焊接部分对应的基材表面的表面粗糙度。 接合部具有低摩擦性能，并且焊接部分具有改善的焊料润湿性。

公开(公告)号：US08142906B2

公开(公告)日：2012-03-27

申请号：US12712494

申请日：2010-02-25

申请人： Kouichi Taira ,  Yasushi Masago

发明人： Kouichi Taira ,  Yasushi Masago

IPC分类号： B32B15/20 ,  C25D5/50 ,  C25D5/12 ,  C25D7/00 ,  H01R13/03

CPC分类号： C25D5/12 ,  C25D3/12 ,  C25D3/30 ,  C25D3/40 ,  C25D3/58 ,  C25D5/48 ,  C25D5/50 ,  Y10S428/929 ,  Y10T428/12715 ,  Y10T428/12722 ,  Y10T428/1291

摘要： In Sn-plated copper or a Sn-plated copper alloy according to the present invention, a surface plating layer including a Ni layer, a Cu—Sn alloy layer, and a Sn layer which are deposited in this order is formed on a surface of a base material made of copper or a copper alloy. An average thickness of the Ni layer is 0.1 to 1.0 μm, an average thickness of the Cu—Sn alloy layer is 0.55 to 1.0 μm, and an average thickness of the Sn layer is 0.2 to 1.0 μm. The Cu—Sn alloy layer includes Cu—Sn alloy layers having two compositions, a portion thereof in contact with the Ni layer is formed of an ε-phase having an average thickness of 0.5 to 0.95 μm, and a portion thereof in contact with the Sn layer is formed of a η-phase having an average thickness of 0.05 to 0.2 μm.

摘要翻译： 在根据本发明的镀Sn的铜或镀Sn的铜合金中，在其表面上形成有依次沉积的Ni层，Cu-Sn合金层和Sn层的表面镀层 由铜或铜合金制成的基材。 Ni层的平均厚度为0.1〜1.0μm，Cu-Sn合金层的平均厚度为0.55〜1.0μm，Sn层的平均厚度为0.2〜1.0μm。 Cu-Sn合金层包括具有两种组成的Cu-Sn合金层，其与Ni层接触的部分由平均厚度为0.5至0.95μm的相形成，并且其部分与 Sn层由平均厚度为0.05〜0.2μm的相形成。