公开(公告)号：US20180257790A1

公开(公告)日：2018-09-13

申请号：US15973905

申请日：2018-05-08

申请人： Dexmet Corporation

发明人： Mohammed Salim Rahamat ,  Mark A. Murdoch ,  Kenneth William Burtt ,  Brett Alexander Macdonald

IPC分类号： B64D45/02 ,  B26F1/02 ,  B23K26/38

CPC分类号： B64D45/02 ,  B23K26/082 ,  B23K26/38 ,  B23K26/384 ,  B23K26/40 ,  B23K2101/006 ,  B23K2101/18 ,  B23K2103/10 ,  B26F1/02 ,  B32B15/04 ,  B32B15/08 ,  B32B15/20 ,  C23C28/04 ,  C23C28/046 ,  C23C28/34 ,  C23C28/345 ,  C23C30/00 ,  C23C30/005 ,  C23C2222/20 ,  Y10T428/12361 ,  Y10T428/12368 ,  Y10T428/12431 ,  Y10T428/12438 ,  Y10T428/12569 ,  Y10T428/12611 ,  Y10T428/12618 ,  Y10T428/1266 ,  Y10T428/12667 ,  Y10T428/12882 ,  Y10T428/12903 ,  Y10T428/1291 ,  Y10T428/24273 ,  Y10T428/24281 ,  Y10T428/24289 ,  Y10T428/24298 ,  Y10T428/24306 ,  Y10T428/24314 ,  Y10T428/24388 ,  Y10T428/24413

摘要： A metallic foil for lightning strike protection in a composite aerospace structure having a length, a width, and a thickness of not more than 30 microns. There are a plurality of pores of a predefined geometric shape extending through the thickness of the metallic foil and being distributed across a surface area defined by the length and the width of the metallic foil. The plurality of pores in the aggregate define an open area of not more than 40% of the surface area and the metallic foil has a weight of not more than 115 g/m2. The metallic foil has a weight to conductivity ratio of not more than 0.40 gram-ohms per square.

公开(公告)号：US20180154611A1

公开(公告)日：2018-06-07

申请号：US15661141

申请日：2017-07-27

申请人： Government of the United States of America, as Represented by the Secretary of Treasury

发明人： TSINENG TONY YING ,  RICHARD R. ROBIDOUX

IPC分类号： B32B15/01 ,  C22C38/04 ,  C22C38/02 ,  C22C38/00 ,  C22C38/06 ,  C21D6/00 ,  C23C18/32

CPC分类号： B32B15/015 ,  B32B15/013 ,  B32B15/04 ,  B32B15/043 ,  B32B2255/06 ,  B32B2255/205 ,  C21D6/005 ,  C21D6/008 ,  C22C38/002 ,  C22C38/02 ,  C22C38/04 ,  C22C38/06 ,  C22C2202/02 ,  C23C18/32 ,  C23C30/00 ,  C23C30/005 ,  Y10T428/12882 ,  Y10T428/12903 ,  Y10T428/1291 ,  Y10T428/12917 ,  Y10T428/12924 ,  Y10T428/12931 ,  Y10T428/12937 ,  Y10T428/12972 ,  Y10T428/12979 ,  Y10T428/12993 ,  Y10T428/24942 ,  Y10T428/26

摘要： An alloy includes: steel; manganese; aluminum; and silicon in an amount such that the alloy has an electrical conductivity from 2% IACS to 6% IACS measured in accordance with ASTM E1004-09 (2009).

公开(公告)号：US20180056630A1

公开(公告)日：2018-03-01

申请号：US15637479

申请日：2017-06-29

申请人： Xtalic Corporation

发明人： Nazila Dadvand ,  Christopher A. Schuh ,  Alan C. Lund ,  Jonathan C. Trenkle ,  John Cahalen

IPC分类号： B32B15/01 ,  C25D5/12 ,  H01R13/03 ,  B32B15/04 ,  C22C5/06 ,  C25D3/64

CPC分类号： B32B15/018 ,  B32B15/043 ,  C22C5/06 ,  C25D3/64 ,  C25D5/12 ,  H01R13/03 ,  Y10S428/929 ,  Y10S428/935 ,  Y10T428/12875 ,  Y10T428/12882 ,  Y10T428/12889 ,  Y10T428/12896 ,  Y10T428/1291 ,  Y10T428/26 ,  Y10T428/265 ,  Y10T428/31678

摘要： Coated articles and methods for applying coatings are described. The article may include a base material and a coating comprising silver formed thereon. In some embodiments, the coating comprises a silver-based alloy, such as a silver-tungsten alloy. The coating may, in some instances, include at least two layers. For example, the coating may include a first layer comprising a silver-based alloy and a second layer comprising a precious metal. The coating can exhibit desirable properties and characteristics such as durability (e.g., wear), hardness, corrosion resistance, and high conductivity, which may be beneficial, for example, in electrical and/or electronic applications. In some cases, the coating may be applied using an electrodeposition process.

公开(公告)号：US20170216974A1

公开(公告)日：2017-08-03

申请号：US15515508

申请日：2016-05-19

申请人： NIPPON MICROMETAL CORPORATION ,  NIPPON STEEL & SUMIKIN MATERIALS CO., LTD.

发明人： Takashi YAMADA ,  Daizo ODA ,  Teruo HAIBARA ,  Ryo OISHI ,  Kazuyuki SAITO ,  Tomohiro UNO

IPC分类号： B23K35/02 ,  H01L23/00 ,  C22C9/04 ,  B23K35/30 ,  C22C9/06

CPC分类号： B23K35/0227 ,  B23K35/3013 ,  B23K35/302 ,  B23K2101/40 ,  B32B15/00 ,  B32B15/01 ,  B32B15/018 ,  C22C5/04 ,  C22C9/00 ,  C22C9/04 ,  C22C9/06 ,  C23C30/00 ,  C23C30/005 ,  H01L24/05 ,  H01L24/43 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/05624 ,  H01L2224/43 ,  H01L2224/4312 ,  H01L2224/43125 ,  H01L2224/4321 ,  H01L2224/4382 ,  H01L2224/43848 ,  H01L2224/43986 ,  H01L2224/45 ,  H01L2224/45005 ,  H01L2224/45015 ,  H01L2224/45105 ,  H01L2224/45109 ,  H01L2224/45111 ,  H01L2224/45113 ,  H01L2224/45118 ,  H01L2224/4512 ,  H01L2224/45147 ,  H01L2224/45155 ,  H01L2224/45169 ,  H01L2224/45173 ,  H01L2224/45178 ,  H01L2224/45541 ,  H01L2224/45565 ,  H01L2224/45572 ,  H01L2224/45644 ,  H01L2224/45664 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/4845 ,  H01L2224/48463 ,  H01L2224/48824 ,  H01L2224/78 ,  H01L2224/78251 ,  H01L2224/85 ,  H01L2224/85065 ,  H01L2224/85075 ,  H01L2224/85203 ,  H01L2224/85444 ,  H01L2224/85464 ,  H01L2924/01005 ,  H01L2924/01012 ,  H01L2924/01015 ,  H01L2924/0102 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01034 ,  H01L2924/01052 ,  H01L2924/01057 ,  H01L2924/0665 ,  H01L2924/0705 ,  H01L2924/10253 ,  H01L2924/186 ,  Y10T428/12868 ,  Y10T428/12875 ,  Y10T428/12882 ,  Y10T428/12889 ,  Y10T428/12896 ,  Y10T428/12903 ,  Y10T428/1291 ,  Y10T428/2495 ,  Y10T428/24967 ,  Y10T428/265 ,  H01L2924/01028 ,  H01L2924/0103 ,  H01L2924/01045 ,  H01L2924/01049 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01031 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01083 ,  H01L2924/01079 ,  H01L2924/01046 ,  H01L2924/01029 ,  H01L2924/01202 ,  H01L2924/01203 ,  H01L2924/01204 ,  H01L2924/00015 ,  H01L2924/20106 ,  H01L2924/20107 ,  H01L2924/20108 ,  H01L2924/20109 ,  H01L2924/2011 ,  H01L2924/20111 ,  H01L2924/20752 ,  H01L2924/00014 ,  H01L2924/01014 ,  H01L2924/013 ,  H01L2924/00013 ,  H01L2924/20105 ,  H01L2924/01001 ,  H01L2924/01007 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/01027 ,  H01L2924/01047 ,  H01L2924/01013

摘要： A bonding wire for a semiconductor device includes a Cu alloy core material and a Pd coating layer formed on a surface thereof. Containing an element that provides bonding reliability in a high-temperature environment improves the bonding reliability of the ball bonded part in high temperature. Furthermore, making an orientation proportion of a crystal orientation angled at 15 degrees or less to a wire longitudinal direction among crystal orientations in the wire longitudinal direction 30% or more when measuring crystal orientations on a cross-section of the core material in a direction perpendicular to a wire axis of the bonding wire, and making an average crystal grain size in the cross-section of the core material in the direction perpendicular to the wire axis of the bonding wire 0.9 to 1.5 μm provides a strength ratio of 1.6 or less.

公开(公告)号：US09543128B2

公开(公告)日：2017-01-10

申请号：US14090203

申请日：2013-11-26

申请人： MITSUBISHI MATERIALS CORPORATION

发明人： Satoru Mori ,  Souhei Nonaka

IPC分类号： B32B15/20 ,  H01J37/34 ,  H05K3/02 ,  H05K1/09 ,  H05K3/06

CPC分类号： H01J37/3426 ,  H05K1/09 ,  H05K3/022 ,  H05K3/06 ,  H05K2201/0317 ,  H05K2201/0338 ,  Y10T428/1291

摘要： A sputtering target for forming protective film according to the invention is used to form protective film on one surface or both surfaces of a Cu wiring film, and includes 8.0 to 11.0% by mass of Al, 3.0 to 5.0% by mass of Fe, 0.5 to 2.0% by mass of Ni and 0.5 to 2.0% by mass of Mn with a remainder of Cu and inevitable impurities. In addition, a laminated wiring film includes a Cu wiring film and protective film formed on one surface or both surfaces of the Cu wiring film, and the protective film is formed by using the above sputtering target.

摘要翻译： 根据本发明的用于形成保护膜的溅射靶用于在Cu布线膜的一个表面或两个表面上形成保护膜，并且包括8.0至11.0质量％的Al，3.0至5.0质量％的Fe，0.5 至2.0质量％的Ni和0.5〜2.0质量％的Mn，余量为Cu和不可避免的杂质。 此外，层叠布线膜包括Cu布线膜和形成在Cu布线膜的一个表面或两个表面上的保护膜，并且通过使用上述溅射靶形成保护膜。

公开(公告)号：US20160369374A1

公开(公告)日：2016-12-22

申请号：US14898950

申请日：2014-02-20

申请人： MITSUBISHI SHINDOH CO., LTD. ,  MITSUBISHI MATERIALS CORPORATION

发明人： Kazunari MAKI ,  Hiroyuki MORI ,  Daiki YAMASHITA

IPC分类号： C22C9/04 ,  H01B1/02 ,  B22D7/00 ,  C23C30/00 ,  C22F1/08 ,  C22C1/02

CPC分类号： C22C9/04 ,  B22D7/005 ,  C22C1/02 ,  C22F1/00 ,  C22F1/08 ,  C23C28/02 ,  C23C28/021 ,  C23C28/023 ,  C23C30/00 ,  C23C30/005 ,  H01B1/026 ,  Y10T428/12431 ,  Y10T428/12438 ,  Y10T428/12708 ,  Y10T428/12715 ,  Y10T428/12882 ,  Y10T428/12903 ,  Y10T428/1291 ,  Y10T428/263 ,  Y10T428/264 ,  Y10T428/265

摘要： One aspect of this copper alloy for an electronic and electrical equipment contains: more than 2.0 mass % to 36.5 mass % of Zn; 0.10 mass % to 0.90 mass % of Sn; 0.15 mass % to less than 1.00 mass % of Ni; and 0.005 mass % to 0.100 mass % of P, with the balance containing Cu and inevitable impurities, wherein atomic ratios of amounts of elements satisfy 3.00

摘要翻译： 这种用于电子和电气设备的铜合金的一个方面包括：大于2.0质量％至36.5质量％的Zn; 0.10质量％〜0.90质量％的Sn; 0.15质量％〜小于1.00质量％的Ni; 和0.005质量％至0.100质量％的P，余量包含Cu和不可避免的杂质，其中元素的原子比满足3.00

公开(公告)号：US20160242281A1

公开(公告)日：2016-08-18

申请号：US15139482

申请日：2016-04-27

申请人： JX Nippon Mining & Metals Corporation

发明人： Tomota Nagaura ,  Michiya Kohiki ,  Terumasa Moriyama

IPC分类号： H05K1/09

CPC分类号： H05K1/09 ,  B32B3/30 ,  B32B15/01 ,  B32B15/08 ,  B32B15/20 ,  B32B2307/306 ,  B32B2307/714 ,  B32B2457/08 ,  C22C9/00 ,  C25D1/04 ,  C25D3/12 ,  C25D3/38 ,  C25D5/12 ,  C25D9/08 ,  H05K1/0313 ,  H05K3/022 ,  H05K3/025 ,  H05K3/06 ,  H05K3/181 ,  H05K3/188 ,  H05K3/381 ,  H05K3/383 ,  H05K3/388 ,  H05K2201/09009 ,  Y10T428/12549 ,  Y10T428/12569 ,  Y10T428/12611 ,  Y10T428/12792 ,  Y10T428/12847 ,  Y10T428/12903 ,  Y10T428/1291

摘要： Provided is a copper foil for a printed wiring board including a roughened layer on at least one surface thereof. In the roughened layer, the average diameter D1 at the particle bottom being apart from the bottom of each particle by 10% of the particle length is 0.2 to 1.0 μm, and the ratio L1/D1 of the particle length L1 to the average diameter D1 at the particle bottom is 15 or less. In the copper foil for printed wiring board, when a copper foil for printed wiring having a roughened layer is laminated to a resin and then the copper layer is removed by etching, the sum of areas of holes accounting for the resin roughened surface having unevenness is 20% or more. The present invention involves the development of a copper foil for a semiconductor package substrate that can avoid circuit erosion without causing deterioration in other properties of the copper foil. In particular, an object of the present invention is to provide a copper foil for a printed wiring board and a method of producing the copper foil, in which the adhesion strength between the copper foil and the resin can be enhanced by improvement of the roughened layer of the copper foil.

摘要翻译： 提供一种用于印刷电路板的铜箔，其在其至少一个表面上包括粗糙层。 在粗糙层中，粒子底部的平均粒径D1与粒子的底部相隔10％的粒子长度为0.2〜1.0μm，粒子长度L1与平均直径D1的比L1 / D1 在颗粒底部为15或更小。 在印刷电路板用铜箔中，当将具有粗糙层的印刷布线用铜箔层压到树脂上，然后通过蚀刻除去铜层时，占据具有凹凸的树脂粗糙面的孔面积之和为 20％以上。 本发明涉及开发用于半导体封装基板的铜箔，其可以避免电路侵蚀而不会导致铜箔的其它性能的劣化。 特别地，本发明的目的是提供一种用于印刷线路板的铜箔和铜箔的制造方法，其中可以通过改善粗糙层来提高铜箔和树脂之间的粘附强度 的铜箔。

公开(公告)号：US09412483B2

公开(公告)日：2016-08-09

申请号：US14278626

申请日：2014-05-15

申请人： Feindrahtwerk Adolf Edelhoff GmbH & Co. KG

发明人： Gerhard Bürstner ,  Mathias Fiolka

IPC分类号： H01B1/02 ,  H02G15/02 ,  H01B5/02

CPC分类号： H01B1/026 ,  D07B2201/2011 ,  D07B2205/3067 ,  D07B2205/3085 ,  D07B2205/3089 ,  H01B5/02 ,  H02G15/02 ,  Y10T428/12535 ,  Y10T428/12556 ,  Y10T428/12715 ,  Y10T428/12889 ,  Y10T428/12896 ,  Y10T428/1291 ,  Y10T428/12924 ,  D07B2801/18

摘要： A contact element is provided. The contact element has a composite wire. The composite wire has a core made of steel or a steel alloy, a copper alloy layer surrounding the core and a metallic coating applied to the copper alloy layer. The contact element is configured as a connecting wire, a connection wire, a cable wire, a cable strand, a plug-in pin for plug connectors, a weaving wire, a woven wire mesh, a knitted wire mesh or a spring element.

摘要翻译： 提供接触元件。 接触元件具有复合导线。 复合线材具有由钢或钢合金制成的芯，围绕芯的铜合金层和施加于铜合金层的金属涂层。 接触元件被构造为连接线，连接线，电缆线，电缆线，用于插头连接器的插入式针，编织线，编织丝网，针织线网或弹簧元件。

公开(公告)号：US09388497B2

公开(公告)日：2016-07-12

申请号：US14414655

申请日：2013-07-11

申请人： TOYO KOHAN CO., LTD.

发明人： Nobuaki Mukai

IPC分类号： C23C18/16 ,  C23C18/42 ,  C23C28/02 ,  B32B15/01 ,  C23C18/50 ,  C22C19/00 ,  C23C18/44 ,  C23C18/36 ,  H01M8/02

CPC分类号： C23C18/1831 ,  B32B15/01 ,  B32B15/017 ,  B32B15/018 ,  B32B15/043 ,  C22C5/02 ,  C22C19/00 ,  C22C21/06 ,  C23C18/16 ,  C23C18/1633 ,  C23C18/165 ,  C23C18/1651 ,  C23C18/1653 ,  C23C18/32 ,  C23C18/34 ,  C23C18/36 ,  C23C18/38 ,  C23C18/40 ,  C23C18/42 ,  C23C18/44 ,  C23C18/48 ,  C23C18/50 ,  C23C18/52 ,  C23C18/54 ,  C23C28/00 ,  C23C28/02 ,  C23C28/021 ,  C23C30/00 ,  C23C30/005 ,  H01M8/0228 ,  Y10T428/12708 ,  Y10T428/12715 ,  Y10T428/12722 ,  Y10T428/12861 ,  Y10T428/12868 ,  Y10T428/12875 ,  Y10T428/12882 ,  Y10T428/12889 ,  Y10T428/12896 ,  Y10T428/12903 ,  Y10T428/1291 ,  Y10T428/12917 ,  Y10T428/12924 ,  Y10T428/12931 ,  Y10T428/12937 ,  Y10T428/12944 ,  Y10T428/12972 ,  Y10T428/2495 ,  Y10T428/24967 ,  Y10T428/24975

摘要： There is provided a method of electroless gold plating, wherein the method includes a step of forming an underlying alloy layer on a base material and a step of forming a gold plate layer directly on the underlying alloy layer by means of electroless reduction plating using a cyanide-free gold plating bath, wherein the method is characterized in that the underlying alloy layer is formed of an M1-M2-M3 alloy (where M1 is at least one element selected from Ni, Fe, Co, Cu, Zn and Sn, M2 is at least one element selected from Pd, Re, Pt, Rh, Ag and Ru, and M3 is at least one element selected from P and B).

摘要翻译： 提供了一种无电镀金的方法，其中所述方法包括在基材上形成下面的合金层的步骤，以及通过使用氰化物的无电还原电镀直接在下面的合金层上形成金板层的步骤 其特征在于，下面的合金层由M1-M2-M3合金（其中M1是选自Ni，Fe，Co，Cu，Zn和Sn中的至少一种元素，M2，M2 是选自Pd，Re，Pt，Rh，Ag和Ru中的至少一种元素，M3是选自P和B中的至少一种元素）。

公开(公告)号：US09299472B2

公开(公告)日：2016-03-29

申请号：US14296796

申请日：2014-06-05

申请人： Shuwei Sun ,  Francois-Charles Dary ,  Marc Abouaf ,  Patrick Hogan ,  Qi Zhang

发明人： Shuwei Sun ,  Francois-Charles Dary ,  Marc Abouaf ,  Patrick Hogan ,  Qi Zhang

IPC分类号： H01L21/84 ,  H01B1/02 ,  H01L29/66 ,  G06F3/041 ,  H01L29/49

CPC分类号： H01L27/1244 ,  B81C1/00 ,  B81C1/00031 ,  B81C1/00404 ,  B81C1/00523 ,  B81C1/00547 ,  C21D1/00 ,  C21D9/00 ,  C21D2201/00 ,  C21D2211/00 ,  C21D2251/00 ,  C22F1/00 ,  C22F1/04 ,  C22F1/08 ,  C22F1/14 ,  G06F3/041 ,  G06F3/0412 ,  G06F3/044 ,  G06F2203/04103 ,  H01B1/026 ,  H01L23/53238 ,  H01L29/4908 ,  H01L29/6675 ,  H01L29/78603 ,  H01L29/78666 ,  H01L2924/0002 ,  Y10T428/12611 ,  Y10T428/1266 ,  Y10T428/12681 ,  Y10T428/12687 ,  Y10T428/12694 ,  Y10T428/12708 ,  Y10T428/12715 ,  Y10T428/12722 ,  Y10T428/12743 ,  Y10T428/1275 ,  Y10T428/12806 ,  Y10T428/12812 ,  Y10T428/12819 ,  Y10T428/12826 ,  Y10T428/1284 ,  Y10T428/12847 ,  Y10T428/12861 ,  Y10T428/12868 ,  Y10T428/12875 ,  Y10T428/12882 ,  Y10T428/12889 ,  Y10T428/12896 ,  Y10T428/12903 ,  Y10T428/1291 ,  Y10T428/12931 ,  H01L2924/00

摘要： In various embodiments, electronic devices such as thin-film transistors incorporate electrodes featuring a conductor layer and, disposed below the conductor layer, a barrier layer comprising an alloy of Cu and one or more refractory metal elements selected from the group consisting of Ta, Nb, Mo, W, Zr, Hf, Re, Os, Ru, Rh, Ti, V, Cr, and Ni.

摘要翻译： 在各种实施例中，诸如薄膜晶体管的电子器件包括具有导体层的电极，并且在导体层下方设置阻挡层，该阻挡层包括Cu和一种或多种难熔金属元素的合金，所述难熔金属元素选自Ta，Nb ，Mo，W，Zr，Hf，Re，Os，Ru，Rh，Ti，V，Cr和Ni。