Holographic device with divided object beams, a multicolor light source
and direction-selective screen
    2.
    发明授权
    Holographic device with divided object beams, a multicolor light source and direction-selective screen 失效
    具有分离对象物体的全息设备,多光源光源和方向选择屏幕

    公开(公告)号:US4037919A

    公开(公告)日:1977-07-26

    申请号:US576460

    申请日:1975-05-12

    IPC分类号: G03H1/00 G03H1/16 G03H1/30

    CPC分类号: G03H1/00

    摘要: A holographic device comprises a film for displaying a three-dimensional object as images, each of which is obtained as viewed in a respective one of a plurality of different directions, a phase plate for providing a light beam for illuminating each of said images of the film with an additional phase at random, a sampling grating for dividing a light beam from the phase plate into a plurality of small groups of light beams, a photosensitive material, and a slit for simultaneously radiating said light beam and a light beam having coherency therewith on each position of said photosensitive material in succession.

    Semiconductor laser
    5.
    发明授权
    Semiconductor laser 失效
    半导体激光器

    公开(公告)号:US4759030A

    公开(公告)日:1988-07-19

    申请号:US870948

    申请日:1986-06-05

    CPC分类号: B82Y20/00 H01S5/34 H01S5/0425

    摘要: A semiconductor laser having high efficiency of luminescence can be obtained by forming a spatial fluctuation of potential so that the potential differs from position to position inside a plane perpendicular to a current flowing direction and electrons and holes or excitons formed by a combination of them can be localized not only in the current flowing direction but also inside the plane perpendicular to the current flowing direction. More definitely, corrugations or ruggedness having a mean pitch of below 100 nm and a level difference of from 1/10 to 1/2 of the mean thickness of an active layer are formed on the surface of the active layer of the semiconductor laser.

    摘要翻译: 具有高发光效率的半导体激光器可以通过形成电位的空间波动使得电位在与电流流动方向垂直的平面内的位置不同,并且由它们的组合形成的电子和空穴或激子可以是 不仅在当前的流动方向上而且在垂直于电流流动方向的平面内。 更确定地,在半导体激光器的有源层的表面上形成具有低于100nm的平均间距的波纹或粗糙度以及有源层的平均厚度的1/10至1/2的水平差。