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1.发明申请CLEANING AND DRYING-PREVENTING METHOD, AND CLEANING AND DRYING-PREVENTING APPARATUS 有权清洁和干燥预防方法，清洁和干燥预防装置公开(公告)号：US20120255581A1
公开(公告)日：2012-10-11
申请号：US13527904
申请日：2012-06-20
CPC分类号： B08B9/00 , H01L21/67057 , H01L21/6715
摘要： A cleaning and drying-preventing method including: positioning a nozzle in a container such that a funnel-like inner circumferential surface of the container is located around a periphery of a distal end of the nozzle; sucking a liquid in the nozzle to retract a level of the liquid to a side of a supply passage; supplying a solvent into the container to form a swirl flow of the solvent turning around the distal end of the nozzle, and cleaning the nozzle by the swirl flow; supplying a solvent into the container to form a liquid pool of the solvent; and further retracting the level of the liquid in the nozzle to the side of the supply passage. A liquid layer, an air layer, and a solvent layer are formed in the nozzle in this order from the side of the supply passage, to prevent drying of the liquid in the nozzle.
摘要翻译： 一种清洁和防干燥方法，包括：将容器的漏斗状内周面位于所述喷嘴的前端周边的容器内， 在喷嘴中吸入液体以将液体的一定水平回缩到供给通道的一侧; 将溶剂供应到容器中以形成围绕喷嘴的远端转动的溶剂的旋转流，并通过涡流清洗喷嘴; 将溶剂供应到容器中以形成溶剂的液体池; 并且进一步将喷嘴中的液体的水平回缩到供给通道的侧面。 在喷嘴中，从供给通道一侧依次形成液体层，空气层和溶剂层，以防止喷嘴中的液体干燥。
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2.发明授权Cleaning and drying-preventing method, and cleaning and drying-preventing apparatus 有权清洁和防干燥方法以及清洁和防干燥装置公开(公告)号：US08216390B2
公开(公告)日：2012-07-10
申请号：US12549573
申请日：2009-08-28
CPC分类号： B08B9/00 , H01L21/67057 , H01L21/6715
摘要： A cleaning and drying-preventing method including: positioning a nozzle in a container such that a funnel-like inner circumferential surface of the container is located around a periphery of a distal end of the nozzle; sucking a liquid in the nozzle to retract a level of the liquid to a side of a supply passage; supplying a solvent into the container to form a swirl flow of the solvent turning around the distal end of the nozzle, and cleaning the nozzle by the swirl flow; supplying a solvent into the container to form a liquid pool of the solvent; and further retracting the level of the liquid in the nozzle to the side of the supply passage. A liquid layer, an air layer, and a solvent layer are formed in the nozzle in this order from the side of the supply passage, to prevent drying of the liquid in the nozzle.
摘要翻译： 一种清洁和防干燥方法，包括：将容器的漏斗状内周面位于所述喷嘴的前端周边的容器内， 在喷嘴中吸入液体以将液体的一定水平缩回到供给通道的一侧; 将溶剂供应到容器中以形成围绕喷嘴的远端转动的溶剂的旋转流，并通过涡流清洗喷嘴; 将溶剂供应到容器中以形成溶剂的液体池; 并且进一步将喷嘴中的液体的水平回缩到供给通道的侧面。 在喷嘴中，从供给通道一侧依次形成液体层，空气层和溶剂层，以防止喷嘴中的液体干燥。
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3.发明授权Cleaning and drying-preventing method, and cleaning and drying-preventing apparatus 有权清洁和防干燥方法以及清洁和防干燥装置公开(公告)号：US08512478B2
公开(公告)日：2013-08-20
申请号：US13527904
申请日：2012-06-20
IPC分类号： B08B3/00
CPC分类号： B08B9/00 , H01L21/67057 , H01L21/6715
摘要： A cleaning and drying-preventing method including: positioning a nozzle in a container such that a funnel-like inner circumferential surface of the container is located around a periphery of a distal end of the nozzle; sucking a liquid in the nozzle to retract a level of the liquid to a side of a supply passage; supplying a solvent into the container to form a swirl flow of the solvent turning around the distal end of the nozzle, and cleaning the nozzle by the swirl flow; supplying a solvent into the container to form a liquid pool of the solvent; and further retracting the level of the liquid in the nozzle to the side of the supply passage. A liquid layer, an air layer, and a solvent layer are formed in the nozzle in this order from the side of the supply passage, to prevent drying of the liquid in the nozzle.
摘要翻译： 一种清洁和防干燥方法，包括：将容器的漏斗状内周面位于所述喷嘴的前端周边的容器内， 在喷嘴中吸入液体以将液体的一定水平缩回到供给通道的一侧; 将溶剂供应到容器中以形成围绕喷嘴的远端转动的溶剂的旋转流，并通过涡流清洗喷嘴; 将溶剂供应到容器中以形成溶剂的液体池; 并且进一步将喷嘴中的液体的水平回缩到供给通道的侧面。 在喷嘴中，从供给通道一侧依次形成液体层，空气层和溶剂层，以防止喷嘴中的液体干燥。
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4.发明申请CLEANING AND DRYING-PREVENTING METHOD, AND CLEANING AND DRYING-PREVENTING APPARATUS 有权清洁和干燥预防方法，清洁和干燥预防装置公开(公告)号：US20100051059A1
公开(公告)日：2010-03-04
申请号：US12549573
申请日：2009-08-28
IPC分类号： B08B3/00
CPC分类号： B08B9/00 , H01L21/67057 , H01L21/6715
摘要： A cleaning and drying-preventing method including: positioning a nozzle in a container such that a funnel-like inner circumferential surface of the container is located around a periphery of a distal end of the nozzle; sucking a liquid in the nozzle to retract a level of the liquid to a side of a supply passage; supplying a solvent into the container to form a swirl flow of the solvent turning around the distal end of the nozzle, and cleaning the nozzle by the swirl flow; supplying a solvent into the container to form a liquid pool of the solvent; and further retracting the level of the liquid in the nozzle to the side of the supply passage. A liquid layer, an air layer, and a solvent layer are formed in the nozzle in this order from the side of the supply passage, to prevent drying of the liquid in the nozzle.
摘要翻译： 一种清洁和防干燥方法，包括：将容器的漏斗状内周面位于所述喷嘴的前端周边的容器内， 在喷嘴中吸入液体以将液体的一定水平缩回到供给通道的一侧; 将溶剂供应到容器中以形成围绕喷嘴的远端转动的溶剂的旋转流，并通过涡流清洗喷嘴; 将溶剂供应到容器中以形成溶剂的液体池; 并且进一步将喷嘴中的液体的水平回缩到供给通道的侧面。 在喷嘴中，从供给通道一侧依次形成液体层，空气层和溶剂层，以防止喷嘴中的液体干燥。
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公开(公告)号：US20090272407A1
公开(公告)日：2009-11-05
申请号：US12503412
申请日：2009-07-15
CPC分类号： H01L21/67051 , B08B3/02 , B08B3/10 , G03F7/3021 , Y10S134/902
摘要： A cleaning method of cleaning a surface of a substrate that is processed by a developing process. The method includes pouring a cleaning liquid onto a central part of the substrate. A dry area that is not wetted with the cleaning liquid is created in a central part of the substrate by stopping pouring the cleaning liquid or by shifting a cleaning liquid pouring position to which the cleaning liquid is poured from the central part while the substrate holding device is rotating. The dry area is expanded outward from the central part of the substrate by rotating the substrate holding device at a rotating speed not lower than 1500 rpm without pouring the cleaning liquid onto the dry area. The cleaning liquid is poured onto an outer area contiguously surrounding the dry area on the surface of the substrate.
摘要翻译： 清洗通过显影处理处理的基材表面的清洁方法。 该方法包括将清洗液倒入基材的中心部分。 在基板保持装置的中心部分，通过停止注入清洗液体，或者从中央部移动清洗液注入清洗液的位置，形成未被清洗液润湿的干燥区域 正在旋转。 通过以不低于1500rpm的旋转速度旋转基板保持装置，将干燥区域从基板的中心部分向外扩展，而不将清洗液体倾倒到干燥区域上。 将清洗液倒入围绕基材表面的干燥区域的外部区域上。
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公开(公告)号：US07901514B2
公开(公告)日：2011-03-08
申请号：US12503412
申请日：2009-07-15
IPC分类号： B08B7/04
CPC分类号： H01L21/67051 , B08B3/02 , B08B3/10 , G03F7/3021 , Y10S134/902
摘要： A cleaning method of cleaning a surface of a substrate that is processed by a developing process. The method includes pouring a cleaning liquid onto a central part of the substrate. A dry area that is not wetted with the cleaning liquid is created in a central part of the substrate by stopping pouring the cleaning liquid or by shifting a cleaning liquid pouring position to which the cleaning liquid is poured from the central part while the substrate holding device is rotating. The dry area is expanded outward from the central part of the substrate by rotating the substrate holding device at a rotating speed not lower than 1500 rpm without pouring the cleaning liquid onto the dry area. The cleaning liquid is poured onto an outer area contiguously surrounding the dry area on the surface of the substrate.
摘要翻译： 清洗通过显影处理处理的基材表面的清洁方法。 该方法包括将清洗液倒入基材的中心部分。 在基板保持装置的中心部分，通过停止注入清洗液体，或者从中央部移动清洗液注入清洗液的位置，形成未被清洗液润湿的干燥区域 正在旋转。 通过以不低于1500rpm的旋转速度旋转基板保持装置，将干燥区域从基板的中心部分向外扩展，而不将清洗液体倾倒到干燥区域上。 将清洗液倒入围绕基材表面的干燥区域的外部区域上。
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公开(公告)号：US07604013B2
公开(公告)日：2009-10-20
申请号：US11074781
申请日：2005-03-09
IPC分类号： B08B3/00
CPC分类号： H01L21/67051 , B08B3/02 , B08B3/10 , G03F7/3021 , Y10S134/902
摘要： A cleaning method highly effectively cleans a surface of a semiconductor wafer by removing a dissolution product, produced when a surface of a semiconductor wafer is processed by a developing process that develops an exposed film formed on the semiconductor wafer by wetting the exposed film with a developer, from the surface of the semiconductor wafer. A cleaning liquid is poured through a cleaning liquid pouring nozzle onto a central part of a rotating wafer processed by a developing process to spread the cleaning liquid in a film over the surface of the wafer. Then, the cleaning liquid pouring nozzle is shifted to create a dry area in a central part of the wafer and the wafer is rotated at 1500 rpm to expand the dry area. The cleaning liquid pouring nozzle is moved at a nozzle moving speed high enough to keep the cleaning liquid pouring position ahead of the margin of the dry area and pouring the cleaning liquid is stopped upon the arrival of the cleaning liquid pouring nozzle at a predetermined position at 80 mm from the center of the wafer or at 5 mm above toward the center of the wafer from the peripheral edge of the wafer. The cleaning liquid may be poured through another cleaning liquid pouring nozzle disposed beforehand at the predetermined position and pouring the cleaning liquid through the cleaning liquid pouring nozzle may be stopped immediately before the margin of the dry area reaches a part onto which the cleaning liquid is poured through the cleaning liquid pouring nozzle. Preferably, a gas is blown instantaneously against the central part of the wafer to form a core fore the dry area.
摘要翻译： 一种清洁方法，通过除去溶解产物，通过除去半导体晶片的表面，通过利用显影处理来处理半导体晶片的表面，所述显影处理通过用显影剂润湿暴露的膜来形成半导体晶片上形成的曝光膜 ，从半导体晶片的表面。 将清洗液通过清洗液倒出嘴注入到通过显影处理处理的旋转晶片的中心部分上，以将清洁液体以薄膜的形式展开在晶片的表面上。 然后，移动清洗液倾倒嘴，在晶片的中心部分产生干燥区域，以1500rpm的速度旋转晶片，使干燥面积扩大。 清洗液倾倒嘴以喷嘴移动速度移动到足够高的水平，以将清洁液注入位于干燥区域的边缘之前，并且在清洁液体倾倒嘴到达预定位置时停止清洗液体的倾倒 距离晶片的中心80mm，或距离晶片的周边边缘朝向晶片中心5mm以上。 清洗液可以通过预先设置在预定位置的另一个清洗液倒出喷嘴注入，并且清洗液通过清洗液倒出嘴可以在干燥区域的边缘到达清洗液倒入的部分之前立即停止 通过清洗液倒出嘴。 优选地，将气体瞬间吹到晶片的中心部分，以在干燥区域之前形成核心。
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公开(公告)号：US20060048792A1
公开(公告)日：2006-03-09
申请号：US11074781
申请日：2005-03-09
CPC分类号： H01L21/67051 , B08B3/02 , B08B3/10 , G03F7/3021 , Y10S134/902
摘要： A cleaning method highly effectively cleans a surface of a semiconductor wafer by removing a dissolution product, produced when a surface of a semiconductor wafer is processed by a developing process that develops an exposed film formed on the semiconductor wafer by wetting the exposed film with a developer, from the surface of the semiconductor wafer. A cleaning liquid is poured through a cleaning liquid pouring nozzle onto a central part of a rotating wafer processed by a developing process to spread the cleaning liquid in a film over the surface of the wafer. Then, the cleaning liquid pouring nozzle is shifted to create a dry area in a central part of the wafer and the wafer is rotated at 1500 rpm to expand the dry area. The cleaning liquid pouring nozzle is moved at a nozzle moving speed high enough to keep the cleaning liquid pouring position ahead of the margin of the dry area and pouring the cleaning liquid is stopped upon the arrival of the cleaning liquid pouring nozzle at a predetermined position at 80 mm from the center of the wafer or at 5 mm above toward the center of the wafer from the peripheral edge of the wafer. The cleaning liquid may be poured through another cleaning liquid pouring nozzle disposed beforehand at the predetermined position and pouring the cleaning liquid through the cleaning liquid pouring nozzle may be stopped immediately before the margin of the dry area reaches a part onto which the cleaning liquid is poured through the cleaning liquid pouring nozzle. Preferably, a gas is blown instantaneously against the central part of the wafer to form a core fore the dry area.
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