公开(公告)号：US07700481B2

公开(公告)日：2010-04-20

申请号：US11767723

申请日：2007-06-25

申请人： Yaw S. Obeng ,  Murlidhar Bashyam ,  Srinivasa Raghavan

发明人： Yaw S. Obeng ,  Murlidhar Bashyam ,  Srinivasa Raghavan

IPC分类号： H01L21/44

CPC分类号： H01L21/28518 ,  C23F1/28 ,  H01L21/02068 ,  H01L21/32134 ,  H01L21/6708

摘要： A method for manufacturing a semiconductor device. The method comprises forming a metal layer on a silicon-containing layer located on a semiconductor substrate. The method also comprises reacting a portion of the metal layer with the silicon-containing layer to form a metal silicide layer. The method further comprises removing an unreacted portion of the metal layer on the metal silicide layer by a removal process. The removal process includes delivering a flow of an acidic solution to a surface of the unreacted portion of the metal layer, wherein the acidic solution delivered to the surface is substantially gas-free.

摘要翻译： 一种半导体器件的制造方法。 该方法包括在位于半导体衬底上的含硅层上形成金属层。 该方法还包括使金属层的一部分与含硅层反应以形成金属硅化物层。 该方法还包括通过去除工艺去除金属硅化物层上的金属层的未反应部分。 去除方法包括将酸性溶液流传送到金属层的未反应部分的表面，其中输送到表面的酸性溶液基本上不含气体。

公开(公告)号：US20080315322A1

公开(公告)日：2008-12-25

申请号：US11767723

申请日：2007-06-25

申请人： Yaw S. Obeng ,  Murlidhar Bashyam ,  Srinivasa Raghavan

发明人： Yaw S. Obeng ,  Murlidhar Bashyam ,  Srinivasa Raghavan

IPC分类号： H01L23/532 ,  H01L21/768

CPC分类号： H01L21/28518 ,  C23F1/28 ,  H01L21/02068 ,  H01L21/32134 ,  H01L21/6708

摘要： A method for manufacturing a semiconductor device. The method comprises forming a metal layer on a silicon-containing layer located on a semiconductor substrate. The method also comprises reacting a portion of the metal layer with the silicon-containing layer to form a metal silicide layer. The method further comprises removing an unreacted portion of the metal layer on the metal silicide layer by a removal process. The removal process includes delivering a flow of an acidic solution to a surface of the unreacted portion of the metal layer, wherein the acidic solution delivered to the surface is substantially gas-free.

摘要翻译： 一种半导体器件的制造方法。 该方法包括在位于半导体衬底上的含硅层上形成金属层。 该方法还包括使金属层的一部分与含硅层反应以形成金属硅化物层。 该方法还包括通过去除工艺去除金属硅化物层上的金属层的未反应部分。 去除方法包括将酸性溶液流传送到金属层的未反应部分的表面，其中输送到表面的酸性溶液基本上不含气体。

公开(公告)号：US20090152600A1

公开(公告)日：2009-06-18

申请号：US12250628

申请日：2008-10-14

申请人： Srinivasa Raghavan ,  Murlidhar Bashyam ,  Mike Tucker ,  Kalyan Cherukuri

发明人： Srinivasa Raghavan ,  Murlidhar Bashyam ,  Mike Tucker ,  Kalyan Cherukuri

IPC分类号： H01L29/78 ,  H01L21/265

CPC分类号： H01L21/31133 ,  G03F7/423

摘要： A method of manufacturing an IC that comprises fabricating a semiconductor device. Fabricating the device includes depositing a photoresist layer on a substrate surface and implanting one or more dopant species through openings in the photoresist layer into the substrate, and, into the photoresist layer, thereby forming an implanted photoresist layer. Fabricating the device also includes removing the implanted photoresist layer. Removing the implanted photoresist layer includes exposing the implanted photoresist layer to a mixture that includes sulfuric acid, hydrogen peroxide and ozone. The mixture is at a temperature of at least about 130°.

摘要翻译： 一种制造IC的方法，包括制造半导体器件。 制造该器件包括在衬底表面上沉积光致抗蚀剂层并将一种或多种掺杂剂物质通过光致抗蚀剂层中的开口注入到衬底中，并且进入光致抗蚀剂层，从而形成注入的光致抗蚀剂层。 制造该器件还包括去除植入的光致抗蚀剂层。 去除植入的光致抗蚀剂层包括将植入的光致抗蚀剂层暴露于包括硫酸，过氧化氢和臭氧的混合物。 该混合物处于至少约130°的温度。

公开(公告)号：US20100167552A1

公开(公告)日：2010-07-01

申请号：US12345732

申请日：2008-12-30

申请人： Murlidhar Bashyam ,  Rajneesh Jaiswal ,  Jason R. Heine

发明人： Murlidhar Bashyam ,  Rajneesh Jaiswal ,  Jason R. Heine

IPC分类号： H01L21/46 ,  B08B5/00

CPC分类号： H01L21/02063 ,  H01L21/67051 ,  H01L21/67109

摘要： A method of manufacturing an IC device includes providing a workpiece having least one dielectric layer disposed on a surface of the workpiece. The method also includes processing the dielectric layer to form a plurality of apertures in the dielectric layer, where the processing includes at least one micromask-prone process. The method further includes subsequent to the processing step, cryogenically treating the workpiece. In the method, the treating step removes particles deposited on or in the plurality of apertures during the processing step and maintains the plurality of apertures, where the particles are generated from micromask features resulting from the micromask-prone process.

摘要翻译： 制造IC器件的方法包括提供具有设置在工件表面上的至少一个电介质层的工件。 该方法还包括处理电介质层以在电介质层中形成多个孔，其中该处理包括至少一个易于微成像的方法。 该方法还包括在处理步骤之后，对工件进行低温处理。 在该方法中，处理步骤除去在处理步骤期间沉积在多个孔中或在多个孔中的颗粒，并维持多个孔，其中颗粒是由微阵列易位过程产生的微掩模特征产生的。

公开(公告)号：US20110053372A1

公开(公告)日：2011-03-03

申请号：US12549538

申请日：2009-08-28

申请人： Srinivas Raghavan ,  Kalyan Cherukuri ,  Murlidhar Bashyam ,  Richard A. Faust

发明人： Srinivas Raghavan ,  Kalyan Cherukuri ,  Murlidhar Bashyam ,  Richard A. Faust

IPC分类号： H01L21/3205

CPC分类号： H01L21/0206 ,  H01L21/31133 ,  H01L21/32139 ,  H01L28/60

摘要： A method of removing photoresist from a surface during the manufacture of an integrated circuit. Organometallic polymers and monomers are formed during the etch of a hard mask material defining the locations of a metal-bearing film, such as tantalum nitride, when photoresist is used to mask the hard mask etch. These organometallic polymers and monomers as formed are not fully cross-linked. A liquid phase solution of sulfuric acid and hydrogen peroxide used to remove the photoresist also removes these not-fully-cross-linked organometallic polymers and monomers, thus preventing the formation of stubborn contaminants during subsequent high temperature processing.

摘要翻译： 在制造集成电路期间从表面去除光致抗蚀剂的方法。 在光刻胶用于掩蔽硬掩模蚀刻时，在蚀刻期间限定含金属膜（例如氮化钽）的位置的硬掩模材料的蚀刻期间形成有机金属聚合物和单体。 形成的这些有机金属聚合物和单体不完全交联。 用于除去光致抗蚀剂的硫酸和过氧化氢的液相溶液也可除去这些不完全交联的有机金属聚合物和单体，从而防止在随后的高温处理期间形成顽固的污染物。