利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

6 条记录 (耗时 0.021 秒)

    PROCESS FOR REMOVING ION-IMPLANTED PHOTORESIST
    1.
    发明申请
    PROCESS FOR REMOVING ION-IMPLANTED PHOTORESIST 审中-公开
    去除离子胶片的方法

    公开(公告)号：US20090152600A1

    公开(公告)日：2009-06-18

    申请号：US12250628

    申请日：2008-10-14

    申请人： Srinivasa Raghavan ,  Murlidhar Bashyam ,  Mike Tucker ,  Kalyan Cherukuri

    发明人： Srinivasa Raghavan ,  Murlidhar Bashyam ,  Mike Tucker ,  Kalyan Cherukuri

    IPC分类号： H01L29/78 ,  H01L21/265

    CPC分类号： H01L21/31133 ,  G03F7/423

    摘要： A method of manufacturing an IC that comprises fabricating a semiconductor device. Fabricating the device includes depositing a photoresist layer on a substrate surface and implanting one or more dopant species through openings in the photoresist layer into the substrate, and, into the photoresist layer, thereby forming an implanted photoresist layer. Fabricating the device also includes removing the implanted photoresist layer. Removing the implanted photoresist layer includes exposing the implanted photoresist layer to a mixture that includes sulfuric acid, hydrogen peroxide and ozone. The mixture is at a temperature of at least about 130°.

    摘要翻译： 一种制造IC的方法，包括制造半导体器件。 制造该器件包括在衬底表面上沉积光致抗蚀剂层并将一种或多种掺杂剂物质通过光致抗蚀剂层中的开口注入到衬底中，并且进入光致抗蚀剂层，从而形成注入的光致抗蚀剂层。 制造该器件还包括去除植入的光致抗蚀剂层。 去除植入的光致抗蚀剂层包括将植入的光致抗蚀剂层暴露于包括硫酸，过氧化氢和臭氧的混合物。 该混合物处于至少约130°的温度。

    Low Temperature Surface Preparation for Removal of Organometallic Polymers in the Manufacture of Integrated Circuits
    2.
    发明申请
    Low Temperature Surface Preparation for Removal of Organometallic Polymers in the Manufacture of Integrated Circuits 审中-公开
    用于去除有机金属聚合物的低温表面准备在集成电路的制造中

    公开(公告)号：US20110053372A1

    公开(公告)日：2011-03-03

    申请号：US12549538

    申请日：2009-08-28

    申请人： Srinivas Raghavan ,  Kalyan Cherukuri ,  Murlidhar Bashyam ,  Richard A. Faust

    发明人： Srinivas Raghavan ,  Kalyan Cherukuri ,  Murlidhar Bashyam ,  Richard A. Faust

    IPC分类号： H01L21/3205

    CPC分类号： H01L21/0206 ,  H01L21/31133 ,  H01L21/32139 ,  H01L28/60

    摘要： A method of removing photoresist from a surface during the manufacture of an integrated circuit. Organometallic polymers and monomers are formed during the etch of a hard mask material defining the locations of a metal-bearing film, such as tantalum nitride, when photoresist is used to mask the hard mask etch. These organometallic polymers and monomers as formed are not fully cross-linked. A liquid phase solution of sulfuric acid and hydrogen peroxide used to remove the photoresist also removes these not-fully-cross-linked organometallic polymers and monomers, thus preventing the formation of stubborn contaminants during subsequent high temperature processing.

    摘要翻译： 在制造集成电路期间从表面去除光致抗蚀剂的方法。 在光刻胶用于掩蔽硬掩模蚀刻时，在蚀刻期间限定含金属膜（例如氮化钽）的位置的硬掩模材料的蚀刻期间形成有机金属聚合物和单体。 形成的这些有机金属聚合物和单体不完全交联。 用于除去光致抗蚀剂的硫酸和过氧化氢的液相溶液也可除去这些不完全交联的有机金属聚合物和单体，从而防止在随后的高温处理期间形成顽固的污染物。

    METHOD OF FABRICATING METAL-BEARING INTEGRATED CIRCUIT STRUCTURES HAVING LOW DEFECT DENSITY
    3.
    发明申请
    METHOD OF FABRICATING METAL-BEARING INTEGRATED CIRCUIT STRUCTURES HAVING LOW DEFECT DENSITY 有权
    制造具有低缺陷密度的金属轴承集成电路结构的方法

    公开(公告)号：US20110306207A1

    公开(公告)日：2011-12-15

    申请号：US12816381

    申请日：2010-06-15

    申请人： Srinivas Raghavan ,  Kalyan Cherukuri ,  Thomas E. Lillibridge ,  Richard A. Faust

    发明人： Srinivas Raghavan ,  Kalyan Cherukuri ,  Thomas E. Lillibridge ,  Richard A. Faust

    IPC分类号： H01L21/3205

    CPC分类号： H01L28/40 ,  H01L21/0206 ,  H01L21/31116 ,  H01L21/31133 ,  H01L21/32134 ,  H01L21/32139

    摘要： A method of fabricating metal-bearing structures in an integrated circuit such as metal-polysilicon capacitors using conductive metal compounds. Defects due to organometallic polymers formed during the etch of a hard mask material are minimized by using a process that includes a plasma etch for the hard mask that achieves a predominantly chemical character using a fluorine-based etch chemistry. Using a low-temperature liquid-phase strip of the hard mask photoresist instead of an ash prevents further cross-linking of polymers formed during the plasma etch. Etching the metal-bearing material using a hot fully-concentrated mixture of ammonium hydroxide and hydrogen peroxide allows short etch times that are particularly shortened for tantalum nitride films deposited with a nitrogen concentration of about 30 percent or greater.

    摘要翻译： 一种在集成电路中制造含金属结构的方法，例如使用导电金属化合物的金属 - 多晶硅电容器。 通过使用包括使用氟基蚀刻化学物质实现主要化学特征的硬掩模的等离子体蚀刻的方法，使在硬掩模材料的蚀刻期间形成的有机金属聚合物的缺陷最小化。 使用硬掩模光刻胶的低温液相条带代替灰分防止在等离子体蚀刻期间形成的聚合物的进一步交联。 使用氢氧化铵和过氧化氢的热的完全浓缩的混合物来蚀刻含金属材料允许短时间的蚀刻时间，其特别地缩短了以大约30％或更大的氮浓度沉积的氮化钽膜。

    Method of fabricating metal-bearing integrated circuit structures having low defect density
    4.
    发明授权
    Method of fabricating metal-bearing integrated circuit structures having low defect density 有权
    制造具有低缺陷密度的金属轴承集成电路结构的方法

    公开(公告)号：US08258041B2

    公开(公告)日：2012-09-04

    申请号：US12816381

    申请日：2010-06-15

    申请人： Srinivas Raghavan ,  Kalyan Cherukuri ,  Thomas E. Lillibridge ,  Richard A. Faust

    发明人： Srinivas Raghavan ,  Kalyan Cherukuri ,  Thomas E. Lillibridge ,  Richard A. Faust

    IPC分类号： H01L21/20

    CPC分类号： H01L28/40 ,  H01L21/0206 ,  H01L21/31116 ,  H01L21/31133 ,  H01L21/32134 ,  H01L21/32139

    摘要： A method of fabricating metal-bearing structures in an integrated circuit such as metal-polysilicon capacitors using conductive metal compounds. Defects due to organometallic polymers formed during the etch of a hard mask material are minimized by using a process that includes a plasma etch for the hard mask that achieves a predominantly chemical character using a fluorine-based etch chemistry. Using a low-temperature liquid-phase strip of the hard mask photoresist instead of an ash prevents further cross-linking of polymers formed during the plasma etch. Etching the metal-bearing material using a hot fully-concentrated mixture of ammonium hydroxide and hydrogen peroxide allows short etch times that are particularly shortened for tantalum nitride films deposited with a nitrogen concentration of about 30 percent or greater.

    摘要翻译： 一种在集成电路中制造含金属结构的方法，例如使用导电金属化合物的金属 - 多晶硅电容器。 通过使用包括使用氟基蚀刻化学物质实现主要化学特征的硬掩模的等离子体蚀刻的方法，使在硬掩模材料的蚀刻期间形成的有机金属聚合物的缺陷最小化。 使用硬掩模光刻胶的低温液相条带代替灰分防止在等离子体蚀刻期间形成的聚合物的进一步交联。 使用氢氧化铵和过氧化氢的热的完全浓缩的混合物来蚀刻含金属材料允许短时间的蚀刻时间，其特别地缩短了以大约30％或更大的氮浓度沉积的氮化钽膜。