公开(公告)号：US06818565B1

公开(公告)日：2004-11-16

申请号：US10253270

申请日：2002-09-24

申请人： Yeuh-Mao Sun ,  Yan-Fei Lin ,  Lin-Jun Wu ,  Yen-Ming Chen

发明人： Yeuh-Mao Sun ,  Yan-Fei Lin ,  Lin-Jun Wu ,  Yen-Ming Chen

IPC分类号： H01L21461

CPC分类号： H01L21/02046 ,  H01L21/02052 ,  H01L21/28211 ,  H01L21/28238

摘要： A method of forming a silicon dioxide gate insulator layer on the surface of a native oxide free semiconductor substrate, has been developed. After performing wet clean procedures used to remove organic contaminants, as well as inorganic contaminants from a semiconductor substrate, a first native oxide layer formed on the surface of the semiconductor substrate as a result of the wet clean procedures is removed via a hydrofluoric acid solution. The hydrofluoric acid procedure results in fluoride ions now located on the surface of the semiconductor substrate. Insertion of the semiconductor substrate into an anneal—oxidation chamber results in a second native oxide formed on the surface of the semiconductor substrate, with the thickness of the second native oxide limited by the presence of the fluoride ions on the surface of the semiconductor substrate. An anneal procedure performed at a temperature greater than 1000° C., results in removal of the second native oxide as well as removal of the fluoride ions. A thermal oxidation procedure is performed in situ, in the anneal—oxidation chamber, resulting in the growth of a silicon dioxide gate insulator layer on the native oxide free surface of the semiconductor substrate.

摘要翻译： 已经开发了在自然无氧化物半导体衬底的表面上形成二氧化硅栅极绝缘体层的方法。 在执行用于去除有机污染物的湿法清洁程序以及来自半导体衬底的无机污染物之后，通过氢氟酸溶液除去由于湿法清洁程序而形成在半导体衬底的表面上的第一自然氧化物层。 氢氟酸过程导致氟离子现在位于半导体衬底的表面上。 将半导体衬底插入退火氧化室导致形成在半导体衬底的表面上的第二自然氧化物，第二自然氧化物的厚度受到在半导体衬底的表面上的氟离子的存在的限制。 在大于1000℃的温度下进行的退火程序导致去除第二自然氧化物以及除去氟离子。 在退火氧化室中原位进行热氧化工艺，导致二氧化硅栅极绝缘体层在半导体衬底的自然氧化物自由表面上生长。

公开(公告)号：US20050227468A1

公开(公告)日：2005-10-13

申请号：US10819681

申请日：2004-04-07

申请人： Yen-Ming Chen ,  Lin-Jun Wu

发明人： Yen-Ming Chen ,  Lin-Jun Wu

IPC分类号： H01L21/336 ,  H01L21/8242 ,  H01L29/51 ,  H01L29/78

CPC分类号： H01L29/6656 ,  H01L29/517 ,  H01L29/6659 ,  H01L29/7833

摘要： A semiconductor device including a gate stack located over a substrate and a spacer located over the substrate and adjacent the gate stack. The spacer includes a plurality of layers, wherein at least one of the plurality of layers is a batch layer and at least one of the plurality of layers is a non-batch layer.

摘要翻译： 一种半导体器件，其包括位于衬底上方的栅极堆叠和位于衬底上并且邻近栅极堆叠的间隔物。 间隔物包括多个层，其中多个层中的至少一个层是批次层，并且多个层中的至少一个层是非批次层。