公开(公告)号：US08884404B2

公开(公告)日：2014-11-11

申请号：US13409931

申请日：2012-03-01

申请人： Yi-Fang Li ,  Chun-Li Lin ,  Chun-Sheng Wu ,  Ding-I Liu

发明人： Yi-Fang Li ,  Chun-Li Lin ,  Chun-Sheng Wu ,  Ding-I Liu

IPC分类号： H01L29/02

CPC分类号： H01L21/76898 ,  H01L21/3086

摘要： The description relates to a method of patterning a semiconductor device to create a through substrate via. The method produces a through substrate via having no photoresist material therein. An intermediate layer deposited over an interlayer dielectric prevents etching solutions from etching interlayer dielectric sidewalls to prevent peeling. The description relates to a semiconductor apparatus including a semiconductor substrate having a through substrate via therein. The semiconductor apparatus further includes an interlayer dielectric over the semiconductor substrate and an intermediate layer over semiconductor substrate and over sidewalls of the interlayer dielectric.

摘要翻译： 该描述涉及图案化半导体器件以形成直通衬底通孔的方法。 该方法通过在其中没有光致抗蚀剂材料产生通孔基板。 沉积在层间电介质上的中间层防止蚀刻溶液蚀刻层间电介质侧壁以防止剥离。 该描述涉及包括其中具有通孔基板的半导体基板的半导体装置。 该半导体装置还包括位于半导体衬底上的层间电介质以及半导体衬底上的中间层以及层间电介质的侧壁。

公开(公告)号：US09716044B2

公开(公告)日：2017-07-25

申请号：US13212904

申请日：2011-08-18

申请人： Jen-Chi Chang ,  Chun-Li Lin ,  Kai-Shiung Hsu ,  Ming-Shiou Kuo ,  Wen-Long Lee ,  Po-Hsiung Leu ,  Ding-I Liu

发明人： Jen-Chi Chang ,  Chun-Li Lin ,  Kai-Shiung Hsu ,  Ming-Shiou Kuo ,  Wen-Long Lee ,  Po-Hsiung Leu ,  Ding-I Liu

IPC分类号： H01L21/8238

CPC分类号： H01L21/823807 ,  H01L21/823814 ,  H01L21/823864 ,  H01L21/823871

摘要： The present disclosure provides a method of making an integrated circuit. The method includes forming a gate stack on a semiconductor substrate; forming a stressed contact etch stop layer (CESL) on the gate stack and on the semiconductor substrate; forming a first dielectric material layer on the stressed CESL using a high aspect ratio process (HARP) at a deposition temperature greater than about 440 C to drive out hydroxide (OH) group; forming a second dielectric material layer on the first dielectric material layer; etching to form contact holes in the first and second dielectric material layers; filling the contact holes with a conductive material; and performing a chemical mechanical polishing (CMP) process.

公开(公告)号：US20130043539A1

公开(公告)日：2013-02-21

申请号：US13212904

申请日：2011-08-18

申请人： Jen-Chi Chang ,  Chun-Li Lin ,  Kai-Shiung Hsu ,  Ming-Shiou Kuo ,  Wen-Long Lee ,  Po-Hsiung Leu ,  Ding-I Liu

发明人： Jen-Chi Chang ,  Chun-Li Lin ,  Kai-Shiung Hsu ,  Ming-Shiou Kuo ,  Wen-Long Lee ,  Po-Hsiung Leu ,  Ding-I Liu

IPC分类号： H01L27/092 ,  H01L21/8238 ,  H01L21/336

CPC分类号： H01L21/823807 ,  H01L21/823814 ,  H01L21/823864 ,  H01L21/823871

摘要： The present disclosure provides a method of making an integrated circuit. The method includes forming a gate stack on a semiconductor substrate; forming a stressed contact etch stop layer (CESL) on the gate stack and on the semiconductor substrate; forming a first dielectric material layer on the stressed CESL using a high aspect ratio process (HARP) at a deposition temperature greater than about 440 C to drive out hydroxide (OH) group; forming a second dielectric material layer on the first dielectric material layer; etching to form contact holes in the first and second dielectric material layers; filling the contact holes with a conductive material; and performing a chemical mechanical polishing (CMP) process.

摘要翻译： 本公开提供了制造集成电路的方法。 该方法包括在半导体衬底上形成栅叠层; 在栅极堆叠和半导体衬底上形成应力接触蚀刻停止层（CESL）; 在大于约440℃的沉积温度下使用高纵横比法（HARP）在应力CESL上形成第一介电材料层以驱出氢氧化物（OH）基团; 在所述第一介电材料层上形成第二介电材料层; 蚀刻以在第一和第二介电材料层中形成接触孔; 用导电材料填充接触孔; 并进行化学机械抛光（CMP）工艺。

公开(公告)号：US08980624B2

公开(公告)日：2015-03-17

申请号：US12651905

申请日：2010-01-04

申请人： Min-Hsien Wu ,  Chun-Li Lin ,  Shiao-Wen Tsai ,  Heng-Liang Liu ,  Yen-Ting Liu

发明人： Min-Hsien Wu ,  Chun-Li Lin ,  Shiao-Wen Tsai ,  Heng-Liang Liu ,  Yen-Ting Liu

IPC分类号： C12M1/00 ,  C12M3/00 ,  C12M3/06 ,  C12M1/12 ,  C12M1/42

CPC分类号： C12M23/44 ,  C12M29/10 ,  C12M29/14 ,  C12M35/04

摘要： An apparatus for high-throughput cell culture with mechanical compression stimulation includes a cell culture vessel and a fluid pressure supply unit. The cell culture vessel includes at least one culture chamber, at least one pressure chamber disposed above the culture chamber, a membrane disposed between the culture chamber and the pressure chamber, and at least one pressurizing member that projects downwardly from the membrane into the culture chamber. The fluid pressure supply unit is connected fluidly to the pressure chamber, and has a fluid pressure supply device to supply a pressurized fluid to the pressure chamber so as to deform the membrane and move the pressurizing member, and a control device that is adapted to vary a pressure of the pressurized fluid in the pressure chamber.

摘要翻译： 用于具有机械压缩刺激的高通量细胞培养的装置包括细胞培养容器和流体压力供应单元。 细胞培养容器包括至少一个培养室，设置在培养室上方的至少一个压力室，设置在培养室和压力室之间的膜，以及至少一个从膜向下突出到培养室中的加压构件 。 流体压力供应单元流体地连接到压力室，并且具有流体压力供应装置，以将加压流体供应到压力室，以使膜变形并移动加压构件，以及适于变化的控制装置 压力室中加压流体的压力。

公开(公告)号：US20110076758A1

公开(公告)日：2011-03-31

申请号：US12651905

申请日：2010-01-04

申请人： Min-Hsien Wu ,  Chun-Li Lin ,  Shiao-Wen Tsai ,  Heng-Liang Liu ,  Yen-Ting Liu

发明人： Min-Hsien Wu ,  Chun-Li Lin ,  Shiao-Wen Tsai ,  Heng-Liang Liu ,  Yen-Ting Liu

IPC分类号： C12M1/12

CPC分类号： C12M23/44 ,  C12M29/10 ,  C12M29/14 ,  C12M35/04

摘要： An apparatus for high-throughput cell culture with mechanical compression stimulation includes a cell culture vessel and a fluid pressure supply unit. The cell culture vessel includes at least one culture chamber, at least one pressure chamber disposed above the culture chamber, a membrane disposed between the culture chamber and the pressure chamber, and at least one pressurizing member that projects downwardly from the membrane into the culture chamber. The fluid pressure supply unit is connected fluidly to the pressure chamber, and has a fluid pressure supply device to supply a pressurized fluid to the pressure chamber so as to deform the membrane and move the pressurizing member, and a control device that is adapted to vary a pressure of the pressurized fluid in the pressure chamber.

摘要翻译： 用于具有机械压缩刺激的高通量细胞培养的装置包括细胞培养容器和流体压力供应单元。 细胞培养容器包括至少一个培养室，设置在培养室上方的至少一个压力室，设置在培养室和压力室之间的膜，以及至少一个从膜向下突出到培养室中的加压构件 。 流体压力供应单元流体地连接到压力室，并且具有流体压力供应装置，以将加压流体供应到压力室，以使膜变形并移动加压构件，以及适于变化的控制装置 压力室中加压流体的压力。