Methods for partially removing circuit patterns from a multi-project wafer
    1.
    发明授权
    Methods for partially removing circuit patterns from a multi-project wafer 有权
    从多工程晶圆部分去除电路图案的方法

    公开(公告)号:US07904855B2

    公开(公告)日:2011-03-08

    申请号:US11536927

    申请日:2006-09-29

    IPC分类号: G06F17/50 H01L21/00

    摘要: Disclosed are a method and a system for partially removing circuit patterns from a multi-project wafer. This method and this system can be used to provide a multi-project-wafer to a user without disclosing proprietary circuit information of other customers. At least one integrated circuit design of a user is identified from a plurality of integrated circuit designs of a plurality of users. Those unidentified circuits can be totally removed through circuit removing method. Then the modified multi-project wafer can be delivered to the user without concerns about disclosing information of unidentified circuits which belongs to other customers. In one embodiment, a laser system may be used to totally remove the unidentified integrated circuit designs without impacting the circuit performance of identified circuits. In another embodiment, a diamond-blade saw may also be used to totally remove the unidentified integrated circuit designs without impacting the circuit performance of identified circuits.

    摘要翻译: 公开了一种从多工程晶片部分去除电路图案的方法和系统。 该方法和该系统可以用于向用户提供多工程晶圆,而不会公开其他客户的专有电路信息。 从多个用户的多个集成电路设计中识别用户的至少一个集成电路设计。 那些不明的电路可以通过电路去除方法完全去除。 然后,修改后的多项目晶片可以传递给用户,而不用担心公开属于其他客户的不明电路的信息。 在一个实施例中,可以使用激光系统来完全去除未识别的集成电路设计,而不会影响识别的电路的电路性能。 在另一个实施例中,金刚石锯片锯也可以用于完全去除未识别的集成电路设计,而不会影响识别的电路的电路性能。

    Method and System for Partially Removing Circuit Patterns From a Multi-Project Wafer
    2.
    发明申请
    Method and System for Partially Removing Circuit Patterns From a Multi-Project Wafer 有权
    从多工程晶圆部分去除电路图案的方法和系统

    公开(公告)号:US20070264798A1

    公开(公告)日:2007-11-15

    申请号:US11536927

    申请日:2006-09-29

    IPC分类号: H01L21/00

    摘要: Disclosed are a method and a system for partially removing circuit patterns from a multi-project wafer. This method and this system can be used to provide a multi-project-wafer to a user without disclosing proprietary circuit information of other customers. At least one integrated circuit design of a user is identified from a plurality of integrated circuit designs of a plurality of users. Those unidentified circuits can be totally removed through circuit removing method. Then the modified multi-project wafer can be delivered to the user without concerns about disclosing information of unidentified circuits which belongs to other customers. In one embodiment, a laser system may be used to totally remove the unidentified integrated circuit designs without impacting the circuit performance of identified circuits. In another embodiment, a diamond-blade saw may also be used to totally remove the unidentified integrated circuit designs without impacting the circuit performance of identified circuits.

    摘要翻译: 公开了一种从多工程晶片部分去除电路图案的方法和系统。 该方法和该系统可以用于向用户提供多工程晶圆,而不会公开其他客户的专有电路信息。 从多个用户的多个集成电路设计中识别用户的至少一个集成电路设计。 那些不明的电路可以通过电路去除方法完全去除。 然后,修改后的多项目晶片可以传递给用户,而不用担心公开属于其他客户的不明电路的信息。 在一个实施例中,可以使用激光系统来完全去除未识别的集成电路设计,而不会影响识别的电路的电路性能。 在另一个实施例中,金刚石锯片锯也可用于完全去除未识别的集成电路设计,而不会影响识别的电路的电路性能。

    Hybrid Multi-Layer Mask
    3.
    发明申请
    Hybrid Multi-Layer Mask 有权
    混合多层面膜

    公开(公告)号:US20110281208A1

    公开(公告)日:2011-11-17

    申请号:US13188347

    申请日:2011-07-21

    IPC分类号: H01L21/77 G03F1/14 G03F7/20

    CPC分类号: G03F1/00

    摘要: A hybrid mask set for exposing a plurality of layers on a semiconductor substrate to create an integrated circuit device is disclosed. The hybrid mask set includes a first group of one or more multi-layer masks (MLMs) for a first subset of the plurality of layers. Each MLM includes a plurality of different images for different layers, the images being separated by a relatively wide image spacer. The hybrid mask set also includes a first group of one or more production-ready masks for a second subset of the plurality of layers. Each production-ready mask includes a plurality of similar images for a common layer, each image being separated by a relatively narrow scribe street.

    摘要翻译: 公开了一种用于暴露半导体衬底上的多个层以形成集成电路器件的混合掩模组。 混合掩模集合包括用于多个层的第一子集的一个或多个多层掩模(MLM)的第一组。 每个MLM包括用于不同层的多个不同图像,该图像被相对较宽的图像间隔物隔开。 混合掩模集合还包括用于多个层的第二子集的第一组一个或多个生产就绪掩模。 每个生产就绪掩模包括用于公共层的多个相似图像,每个图像由相对狭窄的划线路分隔开。

    HYBRID MULTI-LAYER MASK
    4.
    发明申请
    HYBRID MULTI-LAYER MASK 有权
    混合多层面膜

    公开(公告)号:US20100047698A1

    公开(公告)日:2010-02-25

    申请号:US12250338

    申请日:2008-10-13

    IPC分类号: G03F1/14 H01L21/027 G03F7/20

    CPC分类号: G03F1/00

    摘要: A hybrid mask set for exposing a plurality of layers on a semiconductor substrate to create an integrated circuit device is disclosed. The hybrid mask set includes a first group of one or more multi-layer masks (MLMs) for a first subset of the plurality of layers. Each MLM includes a plurality of different images for different layers, the images being separated by a relatively wide image spacer. The hybrid mask set also includes a first group of one or more production-ready masks for a second subset of the plurality of layers. Each production-ready mask includes a plurality of similar images for a common layer, each image being separated by a relatively narrow scribe street.

    摘要翻译: 公开了一种用于暴露半导体衬底上的多个层以形成集成电路器件的混合掩模组。 混合掩模集合包括用于多个层的第一子集的一个或多个多层掩模(MLM)的第一组。 每个MLM包括用于不同层的多个不同图像,该图像被相对较宽的图像间隔物隔开。 混合掩模集合还包括用于多个层的第二子集的第一组一个或多个生产就绪掩模。 每个生产就绪掩模包括用于公共层的多个相似图像,每个图像由相对狭窄的划线路分隔开。

    Hybrid multi-layer mask
    5.
    发明授权
    Hybrid multi-layer mask 有权
    混合多层面膜

    公开(公告)号:US08202681B2

    公开(公告)日:2012-06-19

    申请号:US13188347

    申请日:2011-07-21

    IPC分类号: G03F7/00 G03F1/00

    CPC分类号: G03F1/00

    摘要: A hybrid mask set for exposing a plurality of layers on a semiconductor substrate to create an integrated circuit device is disclosed. The hybrid mask set includes a first group of one or more multi-layer masks (MLMs) for a first subset of the plurality of layers. Each MLM includes a plurality of different images for different layers, the images being separated by a relatively wide image spacer. The hybrid mask set also includes a first group of one or more production-ready masks for a second subset of the plurality of layers. Each production-ready mask includes a plurality of similar images for a common layer, each image being separated by a relatively narrow scribe street.

    摘要翻译: 公开了一种用于暴露半导体衬底上的多个层以形成集成电路器件的混合掩模组。 混合掩模集合包括用于多个层的第一子集的一个或多个多层掩模(MLM)的第一组。 每个MLM包括用于不同层的多个不同图像,该图像被相对较宽的图像间隔物隔开。 混合掩模集合还包括用于多个层的第二子集的第一组一个或多个生产就绪掩模。 每个生产就绪掩模包括用于公共层的多个相似图像,每个图像由相对狭窄的划线路分隔开。

    Hybrid multi-layer mask
    6.
    发明授权
    Hybrid multi-layer mask 有权
    混合多层面膜

    公开(公告)号:US08003281B2

    公开(公告)日:2011-08-23

    申请号:US12250338

    申请日:2008-10-13

    IPC分类号: G03F1/00

    CPC分类号: G03F1/00

    摘要: A hybrid mask set for exposing a plurality of layers on a semiconductor substrate to create an integrated circuit device is disclosed. The hybrid mask set includes a first group of one or more multi-layer masks (MLMs) for a first subset of the plurality of layers. Each MLM includes a plurality of different images for different layers, the images being separated by a relatively wide image spacer. The hybrid mask set also includes a first group of one or more production-ready masks for a second subset of the plurality of layers. Each production-ready mask includes a plurality of similar images for a common layer, each image being separated by a relatively narrow scribe street.

    摘要翻译: 公开了一种用于暴露半导体衬底上的多个层以形成集成电路器件的混合掩模组。 混合掩模集合包括用于多个层的第一子集的一个或多个多层掩模(MLM)的第一组。 每个MLM包括用于不同层的多个不同图像,该图像被相对较宽的图像间隔物隔开。 混合掩模集合还包括用于多个层的第二子集的第一组一个或多个生产就绪掩模。 每个生产就绪掩模包括用于公共层的多个相似图像,每个图像由相对狭窄的划线路分隔开。