摘要:
A method for fabricating an AMOLED pixel includes forming a transparent semiconductor layer on a substrate and forming a first channel layer of the switch TFT, a lower electrode of a storage capacitor and a second channel layer of a driving TFT. A first dielectric layer is formed over the substrate. A first opaque metal gate of the switch TFT, a second opaque metal gate of the driving TFT and a scan line are formed on the first dielectric layer. A first source and a first drain of the switch TFT are formed in the first channel layer and a second source and a second drain of the switch TFT are formed in the second channel layer. A patterned transparent metal layer is formed on the first dielectric layer. A data line is formed over the substrate. An OLED is formed over the substrate.
摘要:
A method for fabricating an AMOLED pixel includes forming a transparent semiconductor layer on a substrate and forming a first channel layer of the switch TFT, a lower electrode of a storage capacitor and a second channel layer of a driving TFT. A first dielectric layer is formed over the substrate. A first opaque metal gate of the switch TFT, a second opaque metal gate of the driving TFT and a scan line are formed on the first dielectric layer. A first source and a first drain of the switch TFT are formed in the first channel layer and a second source and a second drain of the switch TFT are formed in the second channel layer. A patterned transparent metal layer is formed on the first dielectric layer. A data line is formed over the substrate. An OLED is formed over the substrate.
摘要:
A thin film transistor for fabricating on a flexible substrate is provided. The thin film transistor includes a gate, a gate insulating layer, a channel layer, a first conductive pattern, and a second conductive pattern. The gate and the gate insulating layer are disposed on the flexible substrate, and the gate insulating layer covers the gate. The channel layer is disposed on the gate insulating layer and located above the gate. The channel layer has a first contact region and multiple second contact regions, wherein the first contact region is located between the second contact regions. In addition, the first conductive pattern is disposed on a portion of the gate insulating layer and the first contact region; and the second conductive pattern electrically insulated from the first conductive pattern is disposed on a portion of the gate insulating layer and the second contact region.
摘要:
A pixel structure of an active matrix organic light-emitting diode (AMOLED) includes an organic light-emitting diode (OLED), a data line, at least one scan line, at least one switch thin film transistor (TFT), at least one driving TFT and at least one storage capacitor with two transparent electrodes. Since both the electrodes of the transparent storage capacitor are formed by transparent material, the aperture ratio of the pixel and the area of the capacitor largely increase and can reach 50%˜95% of a pixel area. Thus, the display quality of an AMOLED panel can be improved.
摘要:
A pixel structure utilized for flexible displays, which is suitably disposed on a flexible substrate and is driven by a data line and a scan line, is characterized in that the pixel structure comprises a plurality of thin film transistors. In the pixel structure, the plural thin film transistors are connected by various connection layouts so as to solve the prior-art problem that the pixel structure can't functional normally since the single transistor contained in the pixel structure is damaged by alignment error caused by the deformation in the manufacturing process of the flexible substrate or the buckling of the flexible display while it is being used, and further to improve the reliability of the pixel structure disposed on the flexible substrate.
摘要:
A structure and method for improving contact resistance in an organic light emitting diode integrated with a color filter, the structure and method mainly utilize a metal to be filled in a contact well on a source/drain metal layer or in a contact well corresponding to the position of the source/drain metal layer on a poly-silicon island to effectively reduce the contact resistance between pixel electrode and thin film transistor, therefore color display quality of the organic light emitting diode is improved.
摘要:
A sensor element array and method of fabricating the same are provided. The sensor element array is disposed on a substrate and includes a first patterned conductive layer, a channel layer, a first insulation layer, a second patterned conductive layer, a second insulation layer, and a third patterned conductive layer. The first patterned conductive layer includes a sensing line, a first power line, a source/drain pattern and a branch pattern. The channel layer includes a first channel and a second channel. Margins of the first insulation layer and the second patterned conductive layer are substantially overlapped. The second patterned conductive layer includes a selecting line, a gate pattern, and a gate connecting pattern. The second insulation layer has a first connecting opening for exposing the gate connecting pattern. The third patterned conductive layer includes a sensing electrode electrically connected to the gate connecting pattern.
摘要:
A photo sensing element array substrate is provided. The photo sensing element array substrate includes a flexible substrate and a plurality of photo sensing elements. The photo sensing elements are disposed in array on the flexible substrate. Each of the photo sensing elements includes a photo sensing thin film transistor (TFT), an oxide semiconductor TFT and a capacitor. The photo sensing TFT is disposed on the flexible substrate. The oxide semiconductor TFT is disposed on the flexible substrate. The oxide semiconductor TFT is electrically connected to the photo sensing TFT. The capacitor is disposed on the flexible substrate and electrically connected between the photo sensing TFT and the oxide semiconductor TFT. When the photo sensing element array substrate is bent, it remains unaffected from normal operation.
摘要:
A pixel structure for a vertical emissive-reflective (emi-flective) display is provided. The pixel structure has a substrate, a self-light emitting pixel unit arranged on the substrate, and a reflective pixel unit arranged on the self-light emitting pixel unit. By using the vertical pixel structure, the aperture of the display can be increased, and the power consumption can also be decreased.
摘要:
A pixel structure for a vertical emissive-reflective (emi-flective) display is provided. The pixel structure has a substrate, a self-light emitting pixel unit arranged on the substrate, and a reflective pixel unit arranged on the self-light emitting pixel unit. By using the vertical pixel structure, the aperture of the display can be increased, and the power consumption can also be decreased.