METHOD FOR FABRICATING PIXEL STRUCTURE OF ACTIVE MATRIX ORGANIC LIGHT-EMITTING DIODE
    1.
    发明申请
    METHOD FOR FABRICATING PIXEL STRUCTURE OF ACTIVE MATRIX ORGANIC LIGHT-EMITTING DIODE 有权
    有源矩阵有机发光二极管像素结构的制作方法

    公开(公告)号:US20090068773A1

    公开(公告)日:2009-03-12

    申请号:US12254820

    申请日:2008-10-20

    IPC分类号: H01L21/04

    摘要: A method for fabricating an AMOLED pixel includes forming a transparent semiconductor layer on a substrate and forming a first channel layer of the switch TFT, a lower electrode of a storage capacitor and a second channel layer of a driving TFT. A first dielectric layer is formed over the substrate. A first opaque metal gate of the switch TFT, a second opaque metal gate of the driving TFT and a scan line are formed on the first dielectric layer. A first source and a first drain of the switch TFT are formed in the first channel layer and a second source and a second drain of the switch TFT are formed in the second channel layer. A patterned transparent metal layer is formed on the first dielectric layer. A data line is formed over the substrate. An OLED is formed over the substrate.

    摘要翻译: 一种制造AMOLED像素的方法包括在衬底上形成透明半导体层并形成开关TFT的第一沟道层,存储电容器的下电极和驱动TFT的第二沟道层。 第一电介质层形成在衬底上。 开关TFT的第一不透明金属栅极,驱动TFT的第二不透明金属栅极和扫描线形成在第一介电层上。 开关TFT的第一源极和第一漏极形成在第一沟道层中,并且开关TFT的第二源极和第二漏极形成在第二沟道层中。 在第一电介质层上形成有图案的透明金属层。 数据线形成在衬底上。 在衬底上形成OLED。

    Method for fabricating pixel structure of active matrix organic light-emitting diode
    2.
    发明授权
    Method for fabricating pixel structure of active matrix organic light-emitting diode 有权
    有源矩阵有机发光二极管像素结构的制作方法

    公开(公告)号:US07575966B2

    公开(公告)日:2009-08-18

    申请号:US12254820

    申请日:2008-10-20

    IPC分类号: H01L21/00 H01L21/84

    摘要: A method for fabricating an AMOLED pixel includes forming a transparent semiconductor layer on a substrate and forming a first channel layer of the switch TFT, a lower electrode of a storage capacitor and a second channel layer of a driving TFT. A first dielectric layer is formed over the substrate. A first opaque metal gate of the switch TFT, a second opaque metal gate of the driving TFT and a scan line are formed on the first dielectric layer. A first source and a first drain of the switch TFT are formed in the first channel layer and a second source and a second drain of the switch TFT are formed in the second channel layer. A patterned transparent metal layer is formed on the first dielectric layer. A data line is formed over the substrate. An OLED is formed over the substrate.

    摘要翻译: 一种制造AMOLED像素的方法包括在衬底上形成透明半导体层并形成开关TFT的第一沟道层,存储电容器的下电极和驱动TFT的第二沟道层。 第一电介质层形成在衬底上。 开关TFT的第一不透明金属栅极,驱动TFT的第二不透明金属栅极和扫描线形成在第一介电层上。 开关TFT的第一源极和第一漏极形成在第一沟道层中,并且开关TFT的第二源极和第二漏极形成在第二沟道层中。 在第一电介质层上形成有图案的透明金属层。 数据线形成在衬底上。 在衬底上形成OLED。

    THIN FILM TRANSISTOR
    3.
    发明申请
    THIN FILM TRANSISTOR 审中-公开
    薄膜晶体管

    公开(公告)号:US20070158706A1

    公开(公告)日:2007-07-12

    申请号:US11308147

    申请日:2006-03-08

    IPC分类号: H01L31/113 H01L31/062

    摘要: A thin film transistor for fabricating on a flexible substrate is provided. The thin film transistor includes a gate, a gate insulating layer, a channel layer, a first conductive pattern, and a second conductive pattern. The gate and the gate insulating layer are disposed on the flexible substrate, and the gate insulating layer covers the gate. The channel layer is disposed on the gate insulating layer and located above the gate. The channel layer has a first contact region and multiple second contact regions, wherein the first contact region is located between the second contact regions. In addition, the first conductive pattern is disposed on a portion of the gate insulating layer and the first contact region; and the second conductive pattern electrically insulated from the first conductive pattern is disposed on a portion of the gate insulating layer and the second contact region.

    摘要翻译: 提供了一种用于在柔性基板上制造的薄膜晶体管。 薄膜晶体管包括栅极,栅极绝缘层,沟道层,第一导电图案和第二导电图案。 栅极和栅极绝缘层设置在柔性基板上,栅极绝缘层覆盖栅极。 沟道层设置在栅极绝缘层上并位于栅极上方。 沟道层具有第一接触区域和多个第二接触区域,其中第一接触区域位于第二接触区域之间。 此外,第一导电图案设置在栅极绝缘层和第一接触区域的一部分上; 并且与第一导电图案电绝缘的第二导电图案设置在栅极绝缘层和第二接触区域的一部分上。

    PIXEL STRUCTURE OF ACTIVE MATRIX ORGANIC LIGHT-EMITTING DIODE AND METHOD FOR FABRICATING THE SAME
    4.
    发明申请
    PIXEL STRUCTURE OF ACTIVE MATRIX ORGANIC LIGHT-EMITTING DIODE AND METHOD FOR FABRICATING THE SAME 审中-公开
    有源矩阵有机发光二极管的像素结构及其制作方法

    公开(公告)号:US20070152217A1

    公开(公告)日:2007-07-05

    申请号:US11308015

    申请日:2006-03-03

    IPC分类号: H01L29/04

    摘要: A pixel structure of an active matrix organic light-emitting diode (AMOLED) includes an organic light-emitting diode (OLED), a data line, at least one scan line, at least one switch thin film transistor (TFT), at least one driving TFT and at least one storage capacitor with two transparent electrodes. Since both the electrodes of the transparent storage capacitor are formed by transparent material, the aperture ratio of the pixel and the area of the capacitor largely increase and can reach 50%˜95% of a pixel area. Thus, the display quality of an AMOLED panel can be improved.

    摘要翻译: 有源矩阵有机发光二极管(AMOLED)的像素结构包括有机发光二极管(OLED),数据线,至少一条扫描线,至少一个开关薄膜晶体管(TFT),至少一个 驱动TFT和具有两个透明电极的至少一个存储电容器。 由于透明储能电容器的两个电极由透明材料形成,所以像素的开口率和电容器的面积大大增加,并且可以达到象素面积的50%〜95%。 因此,可以提高AMOLED面板的显示质量。

    Pixel structure utilized for flexible displays
    5.
    发明申请
    Pixel structure utilized for flexible displays 审中-公开
    用于柔性显示器的像素结构

    公开(公告)号:US20070040953A1

    公开(公告)日:2007-02-22

    申请号:US11236612

    申请日:2005-09-28

    IPC分类号: G02F1/136

    CPC分类号: G02F1/13624 G02F1/133305

    摘要: A pixel structure utilized for flexible displays, which is suitably disposed on a flexible substrate and is driven by a data line and a scan line, is characterized in that the pixel structure comprises a plurality of thin film transistors. In the pixel structure, the plural thin film transistors are connected by various connection layouts so as to solve the prior-art problem that the pixel structure can't functional normally since the single transistor contained in the pixel structure is damaged by alignment error caused by the deformation in the manufacturing process of the flexible substrate or the buckling of the flexible display while it is being used, and further to improve the reliability of the pixel structure disposed on the flexible substrate.

    摘要翻译: 用于柔性显示器的像素结构,其适当地设置在柔性基板上并且由数据线和扫描线驱动,其特征在于,像素结构包括多个薄膜晶体管。 在像素结构中,通过各种连接布局连接多个薄膜晶体管,以解决像素结构不能正常工作的现有技术问题,因为像素结构中包含的单个晶体管被由于 柔性基板的制造过程中的变形或柔性显示器的使用时的弯曲,并进一步提高设置在柔性基板上的像素结构的可靠性。

    Structure and method for improving contact resistance in an organic light emitting diode integrated with a color filter
    6.
    发明申请
    Structure and method for improving contact resistance in an organic light emitting diode integrated with a color filter 审中-公开
    在与滤色片集成的有机发光二极管中改善接触电阻的结构和方法

    公开(公告)号:US20070194677A1

    公开(公告)日:2007-08-23

    申请号:US11651448

    申请日:2007-01-10

    IPC分类号: H01L51/52 H01L51/56

    摘要: A structure and method for improving contact resistance in an organic light emitting diode integrated with a color filter, the structure and method mainly utilize a metal to be filled in a contact well on a source/drain metal layer or in a contact well corresponding to the position of the source/drain metal layer on a poly-silicon island to effectively reduce the contact resistance between pixel electrode and thin film transistor, therefore color display quality of the organic light emitting diode is improved.

    摘要翻译: 一种用于改善与滤色器集成的有机发光二极管中的接触电阻的结构和方法,该结构和方法主要利用金属填充在源极/漏极金属层或接触阱中的接触阱中 源极/漏极金属层在多晶硅岛上的位置,以有效降低像素电极和薄膜晶体管之间的接触电阻,从而提高了有机发光二极管的彩色显示质量。

    SENSOR ELEMENT ARRAY AND METHOD OF FABRICATING THE SAME
    7.
    发明申请
    SENSOR ELEMENT ARRAY AND METHOD OF FABRICATING THE SAME 有权
    传感器元件阵列及其制造方法

    公开(公告)号:US20130161703A1

    公开(公告)日:2013-06-27

    申请号:US13411623

    申请日:2012-03-04

    IPC分类号: H01L29/84 H01L21/02

    摘要: A sensor element array and method of fabricating the same are provided. The sensor element array is disposed on a substrate and includes a first patterned conductive layer, a channel layer, a first insulation layer, a second patterned conductive layer, a second insulation layer, and a third patterned conductive layer. The first patterned conductive layer includes a sensing line, a first power line, a source/drain pattern and a branch pattern. The channel layer includes a first channel and a second channel. Margins of the first insulation layer and the second patterned conductive layer are substantially overlapped. The second patterned conductive layer includes a selecting line, a gate pattern, and a gate connecting pattern. The second insulation layer has a first connecting opening for exposing the gate connecting pattern. The third patterned conductive layer includes a sensing electrode electrically connected to the gate connecting pattern.

    摘要翻译: 提供了一种传感器元件阵列及其制造方法。 传感器元件阵列设置在基板上,并且包括第一图案化导电层,沟道层,第一绝缘层,第二图案化导电层,第二绝缘层和第三图案化导电层。 第一图案化导电层包括感测线,第一电源线,源极/漏极图案和分支图案。 信道层包括第一信道和第二信道。 第一绝缘层和第二图案化导电层的边缘基本上重叠。 第二图案化导电层包括选择线,栅极图案和栅极连接图案。 第二绝缘层具有用于暴露栅极连接图案的第一连接开口。 第三图案化导电层包括电连接到栅极连接图案的感测电极。

    PHOTO SENSING ELEMENT ARRAY SUBSTRAT
    8.
    发明申请
    PHOTO SENSING ELEMENT ARRAY SUBSTRAT 有权
    照片感应元件阵列SUBSTRAT

    公开(公告)号:US20100127254A1

    公开(公告)日:2010-05-27

    申请号:US12427758

    申请日:2009-04-22

    IPC分类号: H01L29/786

    摘要: A photo sensing element array substrate is provided. The photo sensing element array substrate includes a flexible substrate and a plurality of photo sensing elements. The photo sensing elements are disposed in array on the flexible substrate. Each of the photo sensing elements includes a photo sensing thin film transistor (TFT), an oxide semiconductor TFT and a capacitor. The photo sensing TFT is disposed on the flexible substrate. The oxide semiconductor TFT is disposed on the flexible substrate. The oxide semiconductor TFT is electrically connected to the photo sensing TFT. The capacitor is disposed on the flexible substrate and electrically connected between the photo sensing TFT and the oxide semiconductor TFT. When the photo sensing element array substrate is bent, it remains unaffected from normal operation.

    摘要翻译: 提供了感光元件阵列基板。 感光元件阵列基板包括柔性基板和多个感光元件。 感光元件阵列设置在柔性基板上。 每个感光元件包括感光薄膜晶体管(TFT),氧化物半导体TFT和电容器。 感光TFT设置在柔性基板上。 氧化物半导体TFT设置在柔性基板上。 氧化物半导体TFT电连接到感光TFT。 电容器设置在柔性基板上并电连接在感光TFT和氧化物半导体TFT之间。 当感光元件阵列基板弯曲时,它不会受到正常操作的影响。