公开(公告)号：US07296532B2

公开(公告)日：2007-11-20

申请号：US10323950

申请日：2002-12-18

申请人： Yi-Lung Cheng ,  Mo-Chen Liao ,  Eric Tsai ,  Sze-Au Wu ,  Ying-Lung Wang

发明人： Yi-Lung Cheng ,  Mo-Chen Liao ,  Eric Tsai ,  Sze-Au Wu ,  Ying-Lung Wang

IPC分类号： C23C16/00

CPC分类号： C23C16/45561 ,  C23C16/4412 ,  C23C16/455 ,  C23C16/509

摘要： A method and reactant gas bypass system for carrying out a plasma enhanced chemical vapor deposition (PECVD) process with improved gas flow stability to avoid unionized reactant precursors and thickness non-uniformities the method including providing a semiconductor process wafer having a process surface within a plasma reactor chamber for carrying out at least one plasma process; supplying at least one reactant gas flow at a selected flow rate to bypass the plasma reactor chamber for a period of time to achieve a pre-determined flow rate stability; and, redirecting the at least one reactant gas flow into the plasma reactor chamber to carry out the at least one plasma process.

摘要翻译： 一种用于执行等离子体增强化学气相沉积（PECVD）工艺的方法和反应物气体旁通系统，其具有改进的气体流动稳定性以避免未结合的反应物前体和厚度不均匀性，该方法包括提供具有等离子体内的工艺表面的半导体工艺晶片 反应室，用于进行至少一个等离子体工艺; 以选定的流速供应至少一个反应气体流以绕过等离子体反应器室一段时间以达到预定的流速稳定性; 以及将所述至少一个反应物气流重定向到所述等离子体反应器室中以执行所述至少一个等离子体过程。