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    Ferroelectric memory cell array and method of storing data using the same
    1.
    发明授权
    Ferroelectric memory cell array and method of storing data using the same 有权
    铁电存储单元阵列及使用其存储数据的方法

    公开(公告)号：US06636435B2

    公开(公告)日：2003-10-21

    申请号：US10032987

    申请日：2001-12-27

    申请人： Yil Suk Yang ,  Tae Moon Roh ,  Jong Dae Kim ,  Byoung Gon Yu

    发明人： Yil Suk Yang ,  Tae Moon Roh ,  Jong Dae Kim ,  Byoung Gon Yu

    IPC分类号： G11C1122

    CPC分类号： G11C11/22

    摘要： The present invention relates to a ferroelectric memory cell array formed of a single transistor, and method of storing data using the same. The ferroelectric memory cell array includes a plurality of word lines connected to gates of the memory cells located at respective rows, a plurality of bit lines connected to drains of the memory cells located at respective columns, a common source line commonly connecting sources of the memory cells, and a plurality of well lines each connected to wells in which the memory cells are each formed, wherein a bias voltage of an unit pulse shape is applied to a gate of a selected memory cell and a bias voltage of a pulse shape is applied to a well line. Therefore, the present invention allows a random access without a disturbance since data can be written by means of the polarity characteristic of the ferroelectric.

    摘要翻译： 本发明涉及由单个晶体管形成的铁电存储单元阵列，以及使用该晶体管存储数据的方法。 铁电存储单元阵列包括连接到位于各行的存储单元的栅极的多条字线，连接到位于相应列的存储单元的漏极的多个位线，通常连接存储器的源极的公共源极线 单元和多个井管线，每个阱管线连接到其中形成有存储单元的阱，其中单位脉冲形状的偏置电压被施加到所选存储单元的栅极并施加脉冲形状的偏置电压 到一条井线 因此，本发明允许无障碍地随机存取，因为可以通过铁电体的极性特性写入数据。

    Structures of high voltage device and low voltage device, and method of manufacturing the same
    4.
    发明授权
    Structures of high voltage device and low voltage device, and method of manufacturing the same 失效
    高压器件和低压器件的结构及其制造方法

    公开(公告)号：US06887772B2

    公开(公告)日：2005-05-03

    申请号：US10721970

    申请日：2003-11-24

    申请人： Dae Woo Lee ,  Tae Moon Roh ,  Yil Suk Yang ,  Il Yong Park ,  Byoung Gon Yu ,  Jong Dae Kim

    发明人： Dae Woo Lee ,  Tae Moon Roh ,  Yil Suk Yang ,  Il Yong Park ,  Byoung Gon Yu ,  Jong Dae Kim

    IPC分类号： H05B33/00 ,  H01L21/8234 ,  H01L27/088 ,  H01L27/12 ,  H01L21/20 ,  H01L21/76 ,  H01L21/8238

    CPC分类号： H01L21/823462 ,  H01L27/088 ,  H01L27/1203

    摘要： The present invention relates to structures of a high voltage device and a low voltage device formed on a SOI substrate and a method for manufacturing the same, and it is characterized in which the low voltage device region of silicon device regions in a SOI substrate is higher than the high voltage device region by steps, and a thickness of the silicon device region, where the high voltage device is formed, is equal to a junction depth of impurities of a source and drain in the low voltage device. Accordingly, silicon device regions in the SOI substrate are divided into the high voltage region and the low voltage region and steps are formed there between by oxidation growth method, so that the high voltage device having low junction capacitance can be made, and the low voltage device compatible with the conventional CMOS process and device characteristics can also be made at the same time.

    摘要翻译： 本发明涉及形成在SOI衬底上的高电压器件和低电压器件的结构及其制造方法，其特征在于SOI衬底中硅器件区域的低电压器件区域较高 比高压器件区域逐步，并且形成高压器件的硅器件​​区域的厚度等于低压器件中的源极和漏极的杂质的结深度。 因此，SOI衬底中的硅器件区域被分成高压区域和低电压区域，并且通过氧化生长方法在其间形成步骤，使得可以制造具有低结电容的高电压器件，并且低电压 与传统CMOS工艺兼容的器件和器件特性也可以同时进行。

    Ferroelectric memory device having ferroelectric memory transistors connected to separate well lines
    5.
    发明授权
    Ferroelectric memory device having ferroelectric memory transistors connected to separate well lines 有权
    具有连接到分离的井管线的铁电存储晶体管的铁电存储器件

    公开(公告)号：US06411542B1

    公开(公告)日：2002-06-25

    申请号：US09966112

    申请日：2001-10-01

    申请人： Yil Suk Yang ,  Byoung Gon Yu ,  In Kyu You ,  Won Jae Lee ,  Kyoung Ik Cho

    发明人： Yil Suk Yang ,  Byoung Gon Yu ,  In Kyu You ,  Won Jae Lee ,  Kyoung Ik Cho

    IPC分类号： G11C1122

    CPC分类号： G11C11/22

    摘要： A ferroelectric memory device including a single ferroelectric transistor that one unit memory cell is independently selected and programmed, when the unit memory cell is programmed for “the first state” or “the second state” by applying a DC bias voltage to the single ferroelectric transistor's gate and well. In addition, the ferroelectric memory device can be applied with normal power level Vdd and GND. The ferroelectric memory device includes a plurality of unit memory cells which are arranged in a matrix, by crossing at least one word line in a column direction with a plurality of bit lines and source lines in a row direction and is connected between the source line and the bit line.

    摘要翻译： 当单位存储单元被编程为“第一状态”或“第二状态”时，包括单个存储单元被独立地选择和编程的单个铁电晶体管的铁电存储器件通过将DC偏置电压施加到单个铁电晶体管 门和井。 此外，铁电存储器件可以应用正常的功率电平Vdd和GND。 铁电存储器件包括多个单元存储单元，它们以矩阵形式布置，使列方向上的至少一个字线与行方向上的多个位线和源极线相交，并连接在源极线和 位线。

    Humidity sensor and method of manufacturing the same
    8.
    发明授权
    Humidity sensor and method of manufacturing the same 有权
    湿度传感器及其制造方法

    公开(公告)号：US08047074B2

    公开(公告)日：2011-11-01

    申请号：US12617701

    申请日：2009-11-12

    申请人： Chi Hoon Jun ,  Sang Choon Ko ,  Chang Auck Choi ,  Byoung Gon Yu

    发明人： Chi Hoon Jun ,  Sang Choon Ko ,  Chang Auck Choi ,  Byoung Gon Yu

    IPC分类号： G01N27/12

    CPC分类号： G01N27/121

    摘要： Provided are a humidity sensor and a method of manufacturing the same. The humidity sensor has high sensitivity, quick response time, improved temperature characteristics, low hysteresis and excellent durability. Moreover, for the humidity sensor, a humidity sensitive layer may be formed of various materials. The humidity sensor may be manufactured in a small size on a large scale.The humidity sensor includes a substrate, an open cavity with an open upper portion formed to have a depth and a width in the substrate, a plurality of electrode pads formed on the substrate, a heater connected to one pad of the electrode pads at one end, and connected to another pad of the electrode pads at the other end to be suspended over the open cavity, a plurality of sensing electrodes formed on the same plane as the heater, and suspended over the open cavity to output a sensed signal to the electrode pads, a humidity sensitive layer formed on the heater and the sensing electrodes, suspended over the open cavity, and changed in characteristic according to the humidity, and an ambient temperature measurement part configured to measure the temperature around the humidity sensor, wherein the temperature is used as a reference temperature to control a heating temperature of the heater.

    摘要翻译： 提供了一种湿度传感器及其制造方法。 湿度传感器灵敏度高，响应时间快，温度特性好，滞后小，耐久性好。 此外，对于湿度传感器，湿度敏感层可以由各种材料形成。 湿度传感器可以大规模制造。 湿度传感器包括基底，具有形成为在基底中具有深度和宽度的敞开上部的开口腔，形成在基底上的多个电极垫，一端连接到电极垫的一个垫 并且在另一端连接到电极焊盘的另一焊盘以悬挂在开放空腔上，多个感测电极形成在与加热器相同的平面上，并且悬挂在开放空腔上以将感测到的信号输出到电极 衬垫，形成在加热器上的湿度敏感层和悬挂在开放空腔上的感测电极，并且根据湿度改变特性;以及环境温度测量部件，被配置为测量湿度传感器周围的温度，其中温度为 用作参考温度来控制加热器的加热温度。

    Microbolometer with improved mechanical stability and method of manufacturing the same
    9.
    发明授权
    Microbolometer with improved mechanical stability and method of manufacturing the same 失效
    具有改善机械稳定性的微热辐射计及其制造方法

    公开(公告)号：US07884328B2

    公开(公告)日：2011-02-08

    申请号：US12181871

    申请日：2008-07-29

    申请人： Seong Mok Cho ,  Ho Jun Ryu ,  Woo Seok Yang ,  Sang Hoon Cheon ,  Byoung Gon Yu ,  Chang Auck Choi

    发明人： Seong Mok Cho ,  Ho Jun Ryu ,  Woo Seok Yang ,  Sang Hoon Cheon ,  Byoung Gon Yu ,  Chang Auck Choi

    IPC分类号： H01L27/14

    CPC分类号： G01J5/20 ,  B81B3/007 ,  B81B2201/0207 ,  B81B2203/0118 ,  G01J5/02 ,  G01J5/023 ,  G01J5/024

    摘要： Provided are a microbolometer having a cantilever structure and a method of manufacturing the same, and more particularly, a microbolometer having a three-dimensional cantilever structure, which is improved from a conventional two-dimensional cantilever structure, and a method of manufacturing the same. The method includes providing a substrate including a read-out integrated circuit and a reflective layer for forming an absorption structure, forming a sacrificial layer on the substrate, forming a cantilever structure having an uneven cross-section in the sacrificial layer, forming a sensor part isolated from the substrate by the cantilever structure, and removing the sacrificial layer.

    摘要翻译： 本发明提供一种具有悬臂结构的微电热计及其制造方法，特别是具有三维悬臂结构的微电热计，其从传统的二维悬臂结构得到改进，及其制造方法。 该方法包括提供包括读出集成电路和用于形成吸收结构的反射层的衬底，在衬底上形成牺牲层，在牺牲层中形成具有不均匀横截面的悬臂结构，形成传感器部分 通过悬臂结构从衬底隔离，并去除牺牲层。

    HUMIDITY SENSOR AND METHOD OF MANUFACTURING THE SAME
    10.
    发明申请
    HUMIDITY SENSOR AND METHOD OF MANUFACTURING THE SAME 有权
    湿度传感器及其制造方法

    公开(公告)号：US20100147070A1

    公开(公告)日：2010-06-17

    申请号：US12617701

    申请日：2009-11-12

    申请人： Chi Hoon JUN ,  Sang Choon Ko ,  Chang Auck Choi ,  Byoung Gon Yu

    发明人： Chi Hoon JUN ,  Sang Choon Ko ,  Chang Auck Choi ,  Byoung Gon Yu

    IPC分类号： G01N19/10 ,  B05D5/12 ,  B44C1/22

    CPC分类号： G01N27/121

    摘要： Provided are a humidity sensor and a method of manufacturing the same. The humidity sensor has high sensitivity, quick response time, improved temperature characteristics, low hysteresis and excellent durability. Moreover, for the humidity sensor, a humidity sensitive layer may be formed of various materials. The humidity sensor may be manufactured in a small size on a large scale.The humidity sensor includes a substrate, an open cavity with an open upper portion formed to have a depth and a width in the substrate, a plurality of electrode pads formed on the substrate, a heater connected to one pad of the electrode pads at one end, and connected to another pad of the electrode pads at the other end to be suspended over the open cavity, a plurality of sensing electrodes formed on the same plane as the heater, and suspended over the open cavity to output a sensed signal to the electrode pads, a humidity sensitive layer formed on the heater and the sensing electrodes, suspended over the open cavity, and changed in characteristic according to the humidity, and an ambient temperature measurement part configured to measure the temperature around the humidity sensor, wherein the temperature is used as a reference temperature to control a heating temperature of the heater.

    摘要翻译： 提供了一种湿度传感器及其制造方法。 湿度传感器灵敏度高，响应时间快，温度特性好，滞后小，耐久性好。 此外，对于湿度传感器，湿度敏感层可以由各种材料形成。 湿度传感器可以大规模制造。 湿度传感器包括基底，具有形成为在基底中具有深度和宽度的敞开上部的开口腔，形成在基底上的多个电极垫，一端连接到电极垫的一个垫 并且在另一端连接到电极焊盘的另一焊盘以悬挂在开放空腔上，多个感测电极形成在与加热器相同的平面上，并且悬挂在开放空腔上以将感测到的信号输出到电极 衬垫，形成在加热器上的湿度敏感层和悬挂在开放空腔上的感测电极，并且根据湿度改变特性;以及环境温度测量部件，被配置为测量湿度传感器周围的温度，其中温度为 用作参考温度来控制加热器的加热温度。