专利检索 ap:("Yil-hyung Lee" OR "Jong-Kyu Kim" OR "Jongchul Park" OR "Sang-Kuk Kim" OR "Jongsoon Park" OR "Hyeji Yoon" OR "Woohyun Lee") AND inv:"Hyeji Yoon" 第 1 页

1.

发明授权
Ion beam apparatuses and methods for forming patterns using the same, and methods for manufacturing magnetic memory devices using the same 有权

公开(公告)号：US10276788B2

公开(公告)日：2019-04-30

申请号：US15608212

申请日：2017-05-30

申请人： Yil-hyung Lee , Jong-Kyu Kim , Jongchul Park , Sang-Kuk Kim , Jongsoon Park , Hyeji Yoon , Woohyun Lee

发明人： Yil-hyung Lee , Jong-Kyu Kim , Jongchul Park , Sang-Kuk Kim , Jongsoon Park , Hyeji Yoon , Woohyun Lee

IPC分类号： H01L43/12 , H01L27/22

摘要： An ion beam apparatus may include a chamber assembly configured to hold a material and direct an ion beam on the material, a detector configured to detect a signal generated from the material based on the ion beam being directed on the material, and a controller configured to control at least one parameter associated with the chamber assembly based on the signal, such that at least one of an ion energy associated with the ion beam, an ion current associated with the ion beam, and an incident angle of the ion beam with respect to a top surface of the material is changed continuously with time.

2.

发明授权
Methods of fabricating semiconductor device 有权

公开(公告)号：US10431459B2

公开(公告)日：2019-10-01

申请号：US15668689

申请日：2017-08-03

申请人： Woohyun Lee , Sang-Kuk Kim , Jong-Kyu Kim , Yil-hyung Lee , Jongsoon Park , Hyeji Yoon

发明人： Woohyun Lee , Sang-Kuk Kim , Jong-Kyu Kim , Yil-hyung Lee , Jongsoon Park , Hyeji Yoon

IPC分类号： H01L21/033 , H01L21/311 , H01L21/687

摘要： An etching target layer is formed on a substrate. An upper mask layer is formed on the etching target layer. A plurality of preliminary mask patterns is formed on the upper mask layer. The plurality of preliminary mask patterns is arranged at a first pitch. Two neighboring preliminary mask patterns of the plurality of preliminary mask patterns define a preliminary opening. An ion beam etching process is performed on the upper mask layer using the plurality of preliminary mask patterns as an etch mask to form a first preliminary-interim-mask pattern and a pair of second preliminary-interim-mask patterns. The first preliminary-interim-mask pattern is formed between one of the pair of second preliminary-interim-mask patterns and the other of the pair of second preliminary-interim-mask patterns.