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    DATA STORAGE DEVICES AND METHODS FOR MANUFACTURING THE SAME
    1.
    发明申请
    DATA STORAGE DEVICES AND METHODS FOR MANUFACTURING THE SAME 审中-公开

    公开(公告)号：US20180123029A1

    公开(公告)日：2018-05-03

    申请号：US15606136

    申请日：2017-05-26

    申请人： Jongchul PARK ,  Sang-Kuk KIM

    发明人： Jongchul PARK ,  Sang-Kuk KIM

    IPC分类号： H01L43/12 ,  H01L43/08 ,  H01L43/02 ,  H01L27/22

    CPC分类号： H01L43/12 ,  H01L27/222 ,  H01L43/02 ,  H01L43/08

    摘要： A method of manufacturing a data storage device may include forming a magnetic tunnel junction layer on a substrate, irradiating a first ion beam on the magnetic tunnel junction layer to form magnetic tunnel junction patterns separated from each other, irradiating a second ion beam on the magnetic tunnel junction layer, and irradiating a third ion beam on the magnetic tunnel junction layer. The first ion beam may be irradiated at a first incident angle. The second ion beam may be irradiated at a second incident angle that may be smaller than the first incident angle. The third ion beam may be irradiated to form sidewall insulating patterns on sidewalls of the magnetic tunnel junction patterns based on re-depositing materials separated by the third ion beam on the sidewalls of the magnetic tunnel junction patterns.

    Polarization-dependent type directional isolator and ring-type resonator laser
    2.
    发明授权
    Polarization-dependent type directional isolator and ring-type resonator laser 失效
    偏振相关型方向隔离器和环型谐振器激光器

    公开(公告)号：US06192063B1

    公开(公告)日：2001-02-20

    申请号：US09098625

    申请日：1998-06-17

    申请人： Myong Wook Kim ,  Bong Kyu Kim ,  Young Min Jhon ,  Sang Kuk Kim

    发明人： Myong Wook Kim ,  Bong Kyu Kim ,  Young Min Jhon ,  Sang Kuk Kim

    IPC分类号： H01S3083

    CPC分类号： G02F1/093 ,  H01S3/083 ,  H01S5/1071

    摘要： A polarization-dependent type directional isolator. The polarization-dependent type directional isolator comprises a pair of first optical means positioned at a path along which light travels for changing the rotation direction of an incident light depending on the traveling direction of the incident light; a pair of second optical means for rotating the incident light by a given angle; and a third optical means positioned between the pair of second optical means for passing through only specific components of the components of the incident light, thereby making it possible to obtain laser outputs oscillating in both directions independently.

    摘要翻译： 偏振相关型方向隔离器。 偏振相关型方向隔离器包括一对第一光学装置，其位于沿着光线行进的路径上，用于根据入射光的行进方向改变入射光的旋转方向; 一对用于使入射光旋转给定角度的第二光学装置; 以及位于所述一对第二光学装置之间的第三光学装置，用于仅穿过入射光的分量的特定分量，从而可以获得在两个方向上独立地振荡的激光输出。

    Data storage devices and methods for manufacturing the same
    3.
    发明授权
    Data storage devices and methods for manufacturing the same 有权

    公开(公告)号：US10115893B2

    公开(公告)日：2018-10-30

    申请号：US15606136

    申请日：2017-05-26

    申请人： Jongchul Park ,  Sang-Kuk Kim

    发明人： Jongchul Park ,  Sang-Kuk Kim

    IPC分类号： H01L27/22 ,  H01L43/02 ,  H01L43/08 ,  H01L43/12

    摘要： A method of manufacturing a data storage device may include forming a magnetic tunnel junction layer on a substrate, irradiating a first ion beam on the magnetic tunnel junction layer to form magnetic tunnel junction patterns separated from each other, irradiating a second ion beam on the magnetic tunnel junction layer, and irradiating a third ion beam on the magnetic tunnel junction layer. The first ion beam may be irradiated at a first incident angle. The second ion beam may be irradiated at a second incident angle that may be smaller than the first incident angle. The third ion beam may be irradiated to form sidewall insulating patterns on sidewalls of the magnetic tunnel junction patterns based on re-depositing materials separated by the third ion beam on the sidewalls of the magnetic tunnel junction patterns.

    Methods of fabricating semiconductor device
    7.
    发明授权
    Methods of fabricating semiconductor device 有权

    公开(公告)号：US10431459B2

    公开(公告)日：2019-10-01

    申请号：US15668689

    申请日：2017-08-03

    申请人： Woohyun Lee ,  Sang-Kuk Kim ,  Jong-Kyu Kim ,  Yil-hyung Lee ,  Jongsoon Park ,  Hyeji Yoon

    发明人： Woohyun Lee ,  Sang-Kuk Kim ,  Jong-Kyu Kim ,  Yil-hyung Lee ,  Jongsoon Park ,  Hyeji Yoon

    IPC分类号： H01L21/033 ,  H01L21/311 ,  H01L21/687

    摘要： An etching target layer is formed on a substrate. An upper mask layer is formed on the etching target layer. A plurality of preliminary mask patterns is formed on the upper mask layer. The plurality of preliminary mask patterns is arranged at a first pitch. Two neighboring preliminary mask patterns of the plurality of preliminary mask patterns define a preliminary opening. An ion beam etching process is performed on the upper mask layer using the plurality of preliminary mask patterns as an etch mask to form a first preliminary-interim-mask pattern and a pair of second preliminary-interim-mask patterns. The first preliminary-interim-mask pattern is formed between one of the pair of second preliminary-interim-mask patterns and the other of the pair of second preliminary-interim-mask patterns.

    Method of manufacturing semiconductor device
    9.
    发明授权
    Method of manufacturing semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号：US08318412B2

    公开(公告)日：2012-11-27

    申请号：US12871251

    申请日：2010-08-30

    申请人： Tokashiki Ken ,  Chul-ho Shin ,  Sang-Kuk Kim ,  Do-haing Lee ,  Dong-seok Lee

    发明人： Tokashiki Ken ,  Chul-ho Shin ,  Sang-Kuk Kim ,  Do-haing Lee ,  Dong-seok Lee

    IPC分类号： G03F7/26

    CPC分类号： H01L21/31138 ,  H01L21/0273 ,  H01L21/31144 ,  H01L21/76816 ,  H01L27/10855

    摘要： A semiconductor device is manufactured by a method including processes of trimming and molding resist patterns. A resist layer formed on a substrate is exposed and developed to form the resist patterns. The resist patterns are trimmed using a first gas plasma to change the profiles of the resist patterns. Widths of the trimmed resist patterns are increased using a second gas plasma to form processed resist patterns.

    摘要翻译： 通过包括修整和成型抗蚀剂图案的工艺的方法制造半导体器件。 形成在基板上的抗蚀剂层被曝光和显影以形成抗蚀剂图案。 使用第一气体等离子体来修整抗蚀剂图案以改变抗蚀剂图案的轮廓。 使用第二气体等离子体增加修整的抗蚀剂图案的宽度以形成经处理的抗蚀剂图案。