公开(公告)号：US10276788B2

公开(公告)日：2019-04-30

申请号：US15608212

申请日：2017-05-30

申请人： Yil-hyung Lee ,  Jong-Kyu Kim ,  Jongchul Park ,  Sang-Kuk Kim ,  Jongsoon Park ,  Hyeji Yoon ,  Woohyun Lee

发明人： Yil-hyung Lee ,  Jong-Kyu Kim ,  Jongchul Park ,  Sang-Kuk Kim ,  Jongsoon Park ,  Hyeji Yoon ,  Woohyun Lee

IPC分类号： H01L43/12 ,  H01L27/22

摘要： An ion beam apparatus may include a chamber assembly configured to hold a material and direct an ion beam on the material, a detector configured to detect a signal generated from the material based on the ion beam being directed on the material, and a controller configured to control at least one parameter associated with the chamber assembly based on the signal, such that at least one of an ion energy associated with the ion beam, an ion current associated with the ion beam, and an incident angle of the ion beam with respect to a top surface of the material is changed continuously with time.

公开(公告)号：US10431459B2

公开(公告)日：2019-10-01

申请号：US15668689

申请日：2017-08-03

申请人： Woohyun Lee ,  Sang-Kuk Kim ,  Jong-Kyu Kim ,  Yil-hyung Lee ,  Jongsoon Park ,  Hyeji Yoon

发明人： Woohyun Lee ,  Sang-Kuk Kim ,  Jong-Kyu Kim ,  Yil-hyung Lee ,  Jongsoon Park ,  Hyeji Yoon

IPC分类号： H01L21/033 ,  H01L21/311 ,  H01L21/687

摘要： An etching target layer is formed on a substrate. An upper mask layer is formed on the etching target layer. A plurality of preliminary mask patterns is formed on the upper mask layer. The plurality of preliminary mask patterns is arranged at a first pitch. Two neighboring preliminary mask patterns of the plurality of preliminary mask patterns define a preliminary opening. An ion beam etching process is performed on the upper mask layer using the plurality of preliminary mask patterns as an etch mask to form a first preliminary-interim-mask pattern and a pair of second preliminary-interim-mask patterns. The first preliminary-interim-mask pattern is formed between one of the pair of second preliminary-interim-mask patterns and the other of the pair of second preliminary-interim-mask patterns.

公开(公告)号：US10002905B2

公开(公告)日：2018-06-19

申请号：US15431234

申请日：2017-02-13

申请人： Jongsoon Park ,  Sang-Kuk Kim ,  Jong-Kyu Kim ,  Jongchul Park ,  Woohyun Lee ,  Yil-hyung Lee

发明人： Jongsoon Park ,  Sang-Kuk Kim ,  Jong-Kyu Kim ,  Jongchul Park ,  Woohyun Lee ,  Yil-hyung Lee

IPC分类号： H01L43/00 ,  H01L27/22 ,  H01L43/02 ,  H01L43/08 ,  G11C11/16 ,  H01L43/10

CPC分类号： H01L27/222 ,  G11C11/161 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

摘要： Data storage devices are provided. A data storage device includes a dielectric layer on a substrate. The data storage device includes a plurality of data storage structures on the dielectric layer. The data storage device includes a conductive material on the dielectric layer. Moreover, the data storage device includes an insulation layer on the conductive material.

公开(公告)号：US10205090B2

公开(公告)日：2019-02-12

申请号：US15429494

申请日：2017-02-10

申请人： Yil-hyung Lee ,  Jong-Kyu Kim ,  Jongsoon Park ,  Jongchul Park

发明人： Yil-hyung Lee ,  Jong-Kyu Kim ,  Jongsoon Park ,  Jongchul Park

IPC分类号： H01L43/08 ,  H01L43/02 ,  H01L27/22

摘要： A semiconductor memory device that includes at least a lower contact plug on a semiconductor substrate, a magnetic tunnel junction of the lower contact plug, and a barrier pattern on a sidewall of the lower contact plug may further include an insulation pattern on the sidewall of the lower contact plug. The insulation pattern may be between the barrier pattern and the magnetic tunnel junction pattern. The insulation pattern may include an upper portion and a lower portion whose width is greater than a width of the upper portion.

公开(公告)号：US20170352801A1

公开(公告)日：2017-12-07

申请号：US15429494

申请日：2017-02-10

申请人： Yil-hyung Lee ,  Jong-Kyu KIM ,  Jongsoon PARK ,  Jongchul PARK

发明人： Yil-hyung Lee ,  Jong-Kyu KIM ,  Jongsoon PARK ,  Jongchul PARK

IPC分类号： H01L43/08 ,  H01L43/02

CPC分类号： H01L43/08 ,  H01L27/228 ,  H01L43/02

摘要： A semiconductor memory device that includes at least a lower contact plug on a semiconductor substrate, a magnetic tunnel junction of the lower contact plug, and a barrier pattern on a sidewall of the lower contact plug may further include an insulation pattern on the sidewall of the lower contact plug. The insulation pattern may be between the barrier pattern and the magnetic tunnel junction pattern. The insulation pattern may include an upper portion and a lower portion whose width is greater than a width of the upper portion.