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    METHODS FOR FABRICATING A MAGNETIC SENSOR HEAD USING A CMP DEFINED HARD BIAS AND A TOTALLY FLAT READER GAP
    1.
    发明申请
    METHODS FOR FABRICATING A MAGNETIC SENSOR HEAD USING A CMP DEFINED HARD BIAS AND A TOTALLY FLAT READER GAP 审中-公开
    使用CMP定义的硬度偏差和平面读取器GAP来制造磁性传感器头的方法

    公开(公告)号：US20080155810A1

    公开(公告)日：2008-07-03

    申请号：US11616717

    申请日：2006-12-27

    申请人： Ying Hong ,  Ming Jiang ,  Mustafa M. Pinarbasi ,  John Westwood

    发明人： Ying Hong ,  Ming Jiang ,  Mustafa M. Pinarbasi ,  John Westwood

    IPC分类号： G11B5/127

    CPC分类号： G11B5/3169 ,  B82Y25/00 ,  G01R33/0005 ,  G01R33/093 ,  G11B5/3163 ,  G11B5/3932 ,  G11B5/398 ,  Y10T29/49052

    摘要： Methods for fabricating magnetic sensor heads using a CMP defined hard bias to fabricate a magnetic sensor head reader with a flat reader gap. The method comprises defining a read sensor of the magnetic sensor head. The method further comprises depositing an insulator layer on the read sensor. The method further comprises performing a chemical mechanical polishing (CMP) process down to a protective layer on the read sensor deposited while defining the read sensor to remove an overfill portion of the hard bias layer above the protective layer and to remove a sensor pattern masking layer above the protective layer.

    摘要翻译： 使用CMP限定的硬偏置来制造磁传感器头的方法来制造具有平的读取器间隙的磁传感器头读取器。 该方法包括定义磁传感器头的读取传感器。 该方法还包括在读取传感器上沉积绝缘体层。 该方法还包括在定义读取传感器以去除保护层上方的硬偏置层的过度填充部分并且去除传感器图案掩模层的情况下，将沉积的读取传感器上的保护层进行化学机械抛光（CMP）处理 保护层上方。

    Capping layers with high compressive stress for spin valve sensors
    2.
    发明授权
    Capping layers with high compressive stress for spin valve sensors 失效
    用于自旋阀传感器的高压缩应力的覆盖层

    公开(公告)号：US07268977B2

    公开(公告)日：2007-09-11

    申请号：US10779356

    申请日：2004-02-12

    申请人： James M. Freitag ,  Mustafa M. Pinarbasi

    发明人： James M. Freitag ,  Mustafa M. Pinarbasi

    IPC分类号： G11B5/39

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3906 ,  G11B2005/3996

    摘要： A capping layer employed with a spin valve sensor includes a first capping layer, formed from a refractory metal, and a second capping layer formed from silicon. The interface between the refactory metal layer and the silicon layer form a silicide that provides a large compressive stress on the underlying spin valve sensor. The compressive stress, advantageously, increases the pinning field in the self-pinned pinned layer structure, while providing a high resistivity so that less sense current is shunted by the capping layer structure compared to an all metal capping layer structure that provides a comparable compressive stress.

    摘要翻译： 与自旋阀传感器一起使用的覆盖层包括由难熔金属形成的第一覆盖层和由硅形成的第二覆盖层。 重构金属层和硅层之间的界面形成硅化物，其在下面的自旋阀传感器上提供大的压缩应力。 有利地，压缩应力增加了自销钉扎层结构中的钉扎场，同时提供高电阻率，使得与提供可比较的压缩应力的全金属顶盖层结构相比，封盖层结构较少的感应电流分流 。

    MAGNETORESISTIVE (MR) ELEMENTS HAVING IMPROVED HARD BIAS SEED LAYERS
    5.
    发明申请
    MAGNETORESISTIVE (MR) ELEMENTS HAVING IMPROVED HARD BIAS SEED LAYERS 审中-公开
    具有改进的硬质合金层的磁性元素（MR）元素

    公开(公告)号：US20100195253A1

    公开(公告)日：2010-08-05

    申请号：US12756264

    申请日：2010-04-08

    申请人： James M. Freitag ,  Mustafa M. Pinarbasi

    发明人： James M. Freitag ,  Mustafa M. Pinarbasi

    IPC分类号： G11B5/127

    CPC分类号： G01R33/093 ,  B82Y25/00 ,  G11B5/3932 ,  H01L43/08

    摘要： MR devices and associated methods of fabrication are disclosed. An MR device includes an MR element and a bias structure on either side of the MR element for biasing a free layer of the MR element. The bias structure includes an amorphous buffer layer, a first seed layer formed from Cr, a second seed layer formed from a non-magnetic Cr alloy, and a hard bias magnetic layer. The second seed layer formed from the non-magnetic Cr alloy is formed between the Cr seed layer and the hard bias magnetic layer. An example of a non-magnetic Cr alloy is Chromium-Molybdenum (CrMo).

    摘要翻译： 公开了MR器件和相关的制造方法。 MR装置包括用于偏置MR元件的自由层的MR元件的两侧的MR元件和偏置结构。 偏置结构包括非晶缓冲层，由Cr形成的第一晶种层，由非磁性Cr合金形成的第二籽晶层和硬偏磁层。 在Cr种子层和硬偏磁层之间形成由非磁性Cr合金形成的第二晶种层。 非磁性Cr合金的例子是铬钼（CrMo）。

    MAGNETORESISTIVE (MR) ELEMENTS HAVING IMPROVED HARD BIAS SEED LAYERS
    6.
    发明申请
    MAGNETORESISTIVE (MR) ELEMENTS HAVING IMPROVED HARD BIAS SEED LAYERS 审中-公开
    具有改进的硬质合金层的磁性元素（MR）元素

    公开(公告)号：US20090103215A1

    公开(公告)日：2009-04-23

    申请号：US12346324

    申请日：2008-12-30

    申请人： James M. Freitag ,  Mustafa M. Pinarbasi

    发明人： James M. Freitag ,  Mustafa M. Pinarbasi

    IPC分类号： G11B5/33 ,  B44C1/22

    CPC分类号： G01R33/093 ,  B82Y25/00 ,  G11B5/3932 ,  H01L43/08

    摘要： MR devices and associated methods of fabrication are disclosed. An MR device includes an MR element and a bias structure on either side of the MR element for biasing a free layer of the MR element. The bias structure includes an amorphous buffer layer, a first seed layer formed from Cr, a second seed layer formed from a non-magnetic Cr alloy, and a hard bias magnetic layer. The second seed layer formed from the non-magnetic Cr alloy is formed between the Cr seed layer and the hard bias magnetic layer. An example of a non-magnetic Cr alloy is Chromium-Molybdenum (CrMo).

    摘要翻译： 公开了MR器件和相关的制造方法。 MR装置包括用于偏置MR元件的自由层的MR元件的两侧的MR元件和偏置结构。 偏置结构包括非晶缓冲层，由Cr形成的第一晶种层，由非磁性Cr合金形成的第二籽晶层和硬偏磁层。 在Cr种子层和硬偏磁层之间形成由非磁性Cr合金形成的第二晶种层。 非磁性Cr合金的例子是铬钼（CrMo）。

    Methods of making a current-perpendicular-to-the-planes (CPP) type sensor by ion milling to the spacer layer using a mask without undercuts
    9.
    发明授权
    Methods of making a current-perpendicular-to-the-planes (CPP) type sensor by ion milling to the spacer layer using a mask without undercuts 失效
    通过离子研磨制作电流垂直于平面（CPP）型传感器的方法，使用无底切的掩模

    公开(公告)号：US07350284B2

    公开(公告)日：2008-04-01

    申请号：US10976511

    申请日：2004-10-29

    申请人： Mustafa M. Pinarbasi

    发明人： Mustafa M. Pinarbasi

    IPC分类号： G11B5/127 ,  H04R31/00

    CPC分类号： B82Y25/00 ,  G11B5/3163 ,  G11B5/3169 ,  G11B5/39 ,  G11B5/3909 ,  G11B2005/3996 ,  Y10T29/49043 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

    摘要： In one particular example, a plurality of CPP type sensor layers are formed over a wafer and a mask without undercuts is formed over the plurality of CPP type sensor layers in a central region. With the mask without undercuts in place, an ion milling process is started to remove CPP type sensor layer materials left exposed by the mask without undercuts in end regions which surround the central region. The ion milling process is stopped at or near a spacer layer of the CPP type sensor layers. Insulator materials are then deposited in the end regions where the CPP type sensor layer materials were removed, followed by hard bias materials over the insulator materials. The mask without undercuts is then removed through use of a chemical-mechanical polishing (CMP) assisted lift-off process, which also planarizes the top surface.

    摘要翻译： 在一个特定示例中，在晶片上形成多个CPP型传感器层，并且在中心区域上的多个CPP型传感器层上形成没有底切的掩模。 在没有底切的掩模就位的情况下，开始离子铣削过程以去除由掩模暴露的CPP型传感器层材料，而不会在围绕中心区域的端部区域中具有底切。 离子铣削过程在CPP型传感器层的间隔层处或附近停止。 然后将绝缘体材料沉积在去除CPP型传感器层材料的端部区域中，然后在绝缘体材料上沉积硬偏置材料。 然后通过使用化学机械抛光（CMP）辅助剥离工艺除去没有底切的掩模，其也使顶表面平坦化。