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公开(公告)号：US20120247516A1
公开(公告)日：2012-10-04
申请号：US13369970
申请日：2012-02-09
申请人： Yohei SATO , Hisashi OKUCHI , Hiroshi TOMITA , Hidekazu HAYASHI , Yukiko KITAJIMA , Takayuki TOSHIMA , Mitsuaki IWASHITA , Kazuyuki MITSUOKA , Gen YOU , Hiroki OHNO , Takehiko ORII
发明人： Yohei SATO , Hisashi OKUCHI , Hiroshi TOMITA , Hidekazu HAYASHI , Yukiko KITAJIMA , Takayuki TOSHIMA , Mitsuaki IWASHITA , Kazuyuki MITSUOKA , Gen YOU , Hiroki OHNO , Takehiko ORII
CPC分类号： F26B3/02
摘要： According to one embodiment, a supercritical drying method comprises cleaning a semiconductor substrate with a chemical solution, rinsing the semiconductor substrate with pure water after the cleaning, changing a liquid covering a surface of the semiconductor substrate from the pure water to alcohol by supplying the alcohol to the surface after the rinsing, guiding the semiconductor substrate having the surface wetted with the alcohol into a chamber, discharging oxygen from the chamber by supplying an inert gas into the chamber, putting the alcohol into a supercritical state by increasing temperature in the chamber to a critical temperature of the alcohol or higher after the discharge of the oxygen, and discharging the alcohol from the chamber by lowering pressure in the chamber and changing the alcohol from the supercritical state to a gaseous state. The chamber contains SUS. An inner wall face of the chamber is subjected to electrolytic polishing.
摘要翻译： 根据一个实施方案，超临界干燥方法包括用化学溶液清洗半导体衬底，在清洁之后用纯水冲洗半导体衬底，通过供应醇将覆盖半导体衬底的表面的液体从纯水改变为醇 在冲洗后的表面上引导具有被醇润湿的表面的半导体衬底进入腔室，通过向室中供应惰性气体从室中排出氧气，通过增加室中的温度将醇置于超临界状态 醇的临界温度或排出氧后的较高温度，并且通过降低室中的压力并将醇从超临界状态改变为气态，从室中排出醇。 房间包含SUS。 对室的内壁面进行电解抛光。
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公开(公告)号：US20120048304A1
公开(公告)日：2012-03-01
申请号：US13029776
申请日：2011-02-17
IPC分类号： B08B3/00
CPC分类号： H01L21/67034 , H01L21/02101
摘要： According to an embodiment, a supercritical drying method includes: introducing a semiconductor substrate of which a surface is wet with a supercritical displacement solvent into a chamber; supplying a first supercritical fluid being based on first carbon dioxide to the chamber; supplying a second supercritical fluid which is based on second carbon dioxide to the chamber, after the supplying of the first supercritical fluid; and lowering an inside pressure of the chamber to gasify the second supercritical fluid and to discharge the gasified second supercritical fluid from the chamber. The first carbon dioxide is generated by recovering and recycling the carbon dioxide discharged from the chamber. The second carbon dioxide contains no supercritical displacement solvent or contains the supercritical displacement solvent in a concentration lower than that in the first carbon dioxide.
摘要翻译： 根据一个实施方案，超临界干燥方法包括：将超临界位移溶剂表面被湿润的半导体衬底引入腔室; 将基于第一二氧化碳的第一超临界流体供应到所述室; 在供应第一超临界流体之后，向腔室供应基于第二二氧化碳的第二超临界流体; 并且降低所述室的内部压力以使所述第二超临界流体气化并从所述室排出所述气化的第二超临界流体。 第一种二氧化碳是通过回收和循环从室排出的二氧化碳产生的。 第二种二氧化碳不含超临界置换溶剂，或含有浓度低于第一种二氧化碳浓度的超临界置换溶剂。
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公开(公告)号：US20110314689A1
公开(公告)日：2011-12-29
申请号：US12980079
申请日：2010-12-28
CPC分类号： C11D11/0047 , H01L21/02057 , H01L21/67028 , H01L21/67034
摘要： According to one embodiment, a semiconductor substrate whose surface is wet with a chemical solution (solvent) and formed with patterns having an aspect ratio of 10 or more is loaded into a chamber. Then, while the chemical solution (solvent) remains on the semiconductor substrate, its temperature is increased to a predetermined temperature in the range of 160° C. or more and less than the critical temperature of the chemical solution (solvent), and the evaporated chemical solution (solvent) is discharged from the chamber.
摘要翻译： 根据一个实施例，将其表面用化学溶液（溶剂）润湿并且形成有纵横比为10以上的图案的半导体基板装载到室中。 然后，当化学溶液（溶剂）保留在半导体衬底上时，其温度升高到在160℃以上且小于化学溶液（溶剂）的临界温度的范围内的预定温度，并且蒸发 化学溶液（溶剂）从室排出。
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公开(公告)号：US20110220152A1
公开(公告)日：2011-09-15
申请号：US12963952
申请日：2010-12-09
CPC分类号： F26B3/00 , H01L21/67028 , H01L21/67034
摘要： According to one embodiment, a substrate having a plurality of adjacent patterns on one surface thereof is cleaned by cleaning liquid. Subsequently, after the cleaning liquid is displaced with pure water, the pure water is displaced with displacement liquid. Under a condition that the displacement liquid among the patterns does not vaporize, the displacement liquid not contributing to prevention of collapse of the patterns is removed. After the displacement liquid is removed, the substrate is held in supercritical fluid and the displacement liquid among the patterns is displaced with the supercritical fluid. After the displacement liquid among the patterns is displaced with the supercritical fluid, the supercritical fluid adhering to the substrate is vaporized.
摘要翻译： 根据一个实施例，在其一个表面上具有多个相邻图案的基板通过清洗液体被清洁。 随后，在用纯水置换清洗液之后，用置换液体移动纯水。 在图案中的位移液不会蒸发的条件下，不利于防止图案塌陷的位移液被去除。 在取出置换液后，将基板保持在超临界流体中，并且图案中的置换液体与超临界流体一起移位。 在图案中的位移液体被超临界流体置换之后，附着在基板上的超临界流体被蒸发。
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