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公开(公告)号：US20120247516A1
公开(公告)日：2012-10-04
申请号：US13369970
申请日：2012-02-09
申请人： Yohei SATO , Hisashi OKUCHI , Hiroshi TOMITA , Hidekazu HAYASHI , Yukiko KITAJIMA , Takayuki TOSHIMA , Mitsuaki IWASHITA , Kazuyuki MITSUOKA , Gen YOU , Hiroki OHNO , Takehiko ORII
发明人： Yohei SATO , Hisashi OKUCHI , Hiroshi TOMITA , Hidekazu HAYASHI , Yukiko KITAJIMA , Takayuki TOSHIMA , Mitsuaki IWASHITA , Kazuyuki MITSUOKA , Gen YOU , Hiroki OHNO , Takehiko ORII
CPC分类号： F26B3/02
摘要： According to one embodiment, a supercritical drying method comprises cleaning a semiconductor substrate with a chemical solution, rinsing the semiconductor substrate with pure water after the cleaning, changing a liquid covering a surface of the semiconductor substrate from the pure water to alcohol by supplying the alcohol to the surface after the rinsing, guiding the semiconductor substrate having the surface wetted with the alcohol into a chamber, discharging oxygen from the chamber by supplying an inert gas into the chamber, putting the alcohol into a supercritical state by increasing temperature in the chamber to a critical temperature of the alcohol or higher after the discharge of the oxygen, and discharging the alcohol from the chamber by lowering pressure in the chamber and changing the alcohol from the supercritical state to a gaseous state. The chamber contains SUS. An inner wall face of the chamber is subjected to electrolytic polishing.
摘要翻译： 根据一个实施方案，超临界干燥方法包括用化学溶液清洗半导体衬底，在清洁之后用纯水冲洗半导体衬底，通过供应醇将覆盖半导体衬底的表面的液体从纯水改变为醇 在冲洗后的表面上引导具有被醇润湿的表面的半导体衬底进入腔室，通过向室中供应惰性气体从室中排出氧气，通过增加室中的温度将醇置于超临界状态 醇的临界温度或排出氧后的较高温度，并且通过降低室中的压力并将醇从超临界状态改变为气态，从室中排出醇。 房间包含SUS。 对室的内壁面进行电解抛光。
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公开(公告)号：US20110214694A1
公开(公告)日：2011-09-08
申请号：US13039361
申请日：2011-03-03
摘要： Disclosed is a supercritical processing apparatus and a supercritical processing method for suppressing the pattern collapse or the injection of material constituting a processing liquid into a substrate. A processing chamber receives a substrate subjected to a processing with supercritical fluid, and a liquid supply unit supplies a processing liquid including a fluorine compound to the processing chamber. A liquid discharge unit discharges the supercritical fluid from the processing chamber, a pyrolysis ingredient removing unit removes an ingredient facilitating the pyrolysis of a liquid from the processing chamber or from the liquid supplied from the liquid supply unit, and a to heating unit heats the processing liquid including a fluorine compound of hydrofluoro ether or hydrofluoro carbon.
摘要翻译： 公开了一种超临界处理装置和超临界处理方法，用于抑制图案坍塌或将构成处理液的材料注入基板。 处理室接受用超临界流体处理的基板，液体供给单元向处理室供给包含氟化合物的处理液。 液体排出单元从处理室排出超临界流体，热解成分除去单元去除促进来自处理室的液体的热分解或从液体供应单元供应的液体的热分解，加热单元加热处理 包括氟氟醚或氢氟碳的氟化合物的液体。
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3.发明申请PATTERN FORMING METHOD AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE BY USING THE SAME 失效图案形成方法及使用其制造半导体器件的方法公开(公告)号：US20090220898A1
公开(公告)日：2009-09-03
申请号：US12391679
申请日：2009-02-24
CPC分类号： H01L21/316 , H01L21/02126 , H01L21/02137 , H01L21/02282 , H01L21/02304 , H01L21/0337 , H01L21/31144 , H01L21/312 , H01L21/3122
摘要： The pattern forming method includes forming a catalyst film on a base layer having an uneven surface, wherein the catalyst layer is formed along the uneven surface of the base layer; forming a coating film by coating a fluid material on the catalyst film; forming an insoluble layer which is insoluble in a solvent in the coating film by reacting the coating film along the catalyst film; and maintaining the insoluble layer by removing an unreacted portion of the coating film by using the solvent.
摘要翻译： 图案形成方法包括在具有不平坦表面的基底层上形成催化剂膜，其中催化剂层沿着基底层的不平坦表面形成; 通过在催化剂膜上涂布流体材料形成涂膜; 通过使涂膜沿催化剂膜反应，形成不溶于涂膜的溶剂的不溶层; 并通过使用溶剂除去未涂覆的膜的未反应部分来维持不溶层。
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公开(公告)号：US20130011555A1
公开(公告)日：2013-01-10
申请号：US13557328
申请日：2012-07-25
CPC分类号： B05D1/005 , B05C11/06 , B05C11/08 , B05D3/0406 , B05D3/0486 , B05D2203/30 , B05D2203/35 , G03F7/162 , H01L21/67017 , H01L21/67023 , H01L21/6715
摘要： The invention is a coating apparatus including: a substrate-holding part that holds a substrate horizontally; a chemical nozzle that supplies a chemical to a central portion of the substrate horizontally held by the substrate-holding part; a rotation mechanism that causes the substrate-holding part to rotate to thereby spread out the chemical on a surface of the substrate by centrifugal force, for coating the whole surface with the chemical; a gas-flow-forming unit that forms a down flow of an atmospheric gas on the surface of the substrate horizontally held by the substrate-holding part; a gas-discharging unit that discharges an atmosphere around the substrate; and a gas nozzle that supplies a laminar-flow-forming gas to the surface of the substrate, the laminar-flow-forming gas having a coefficient of kinematic viscosity larger than that of the atmospheric gas; wherein the atmospheric gas or the laminar-flow-forming gas are supplied to the central portion of the substrate.
摘要翻译： 本发明是一种涂覆装置，包括：水平保持基板的基板保持部; 化学喷嘴，其向由所述基板保持部水平保持的所述基板的中央部供给化学品; 旋转机构，其使基板保持部旋转，由此通过离心力在基板的表面上分散化学品，用化学品涂布整个表面; 气体流动形成单元，其在由所述基板保持部水平保持的所述基板的表面上形成气氛气体的向下流动; 气体排出单元，其排出基板周围的气氛; 以及气体喷嘴，其向所述基板的表面供给层流形成气体，所述层流形成气体的运动粘度系数大于所述气氛气体的系数; 其中所述大气气体或层流形成气体被供应到所述基板的中心部分。
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公开(公告)号：US20100307683A1
公开(公告)日：2010-12-09
申请号：US12846406
申请日：2010-07-29
IPC分类号： H01L21/308
CPC分类号： G03F7/40 , H01L21/0273 , H01L21/6715 , H01L21/67178 , H01L21/67225
摘要： To improve the etch resistance of a resist pattern corresponding to an exposure light source with a short wavelength.After a resist film on a substrate is exposed to light and developed to form a resist pattern, a treatment step of supplying a fluorine-based liquid to the surface of the resist pattern is performed. Thereafter, an etching treatment of a base film using the resist pattern as a mask is performed. This increases the density of fluorine molecules on the surface of the resist pattern before the etching treatment to improve the etch resistance of the resist pattern.
摘要翻译： 为了提高与短波长的曝光光源对应的抗蚀剂图案的耐蚀刻性。 在将基板上的抗蚀剂膜曝光并显影以形成抗蚀剂图案之后，进行向抗蚀剂图案的表面供给氟基液体的处理步骤。 此后，进行使用抗蚀剂图案作为掩模的基膜的蚀刻处理。 这增加了蚀刻处理前的抗蚀剂图案表面上的氟分子的密度，以提高抗蚀剂图案的耐蚀刻性。
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