公开(公告)号：US20090303359A1

公开(公告)日：2009-12-10

申请号：US12434340

申请日：2009-05-01

申请人： Yoichi OTSUKA ,  Yoshiyuki ENOMOTO ,  Kazunori NAGAHATA ,  Tadayuki KIMURA ,  Toshihiko HAYASHI ,  Kenichi AOYAGI ,  Kiyotaka TABUCHI ,  Iwao SUGIURA ,  Kensaku MAEDA

发明人： Yoichi OTSUKA ,  Yoshiyuki ENOMOTO ,  Kazunori NAGAHATA ,  Tadayuki KIMURA ,  Toshihiko HAYASHI ,  Kenichi AOYAGI ,  Kiyotaka TABUCHI ,  Iwao SUGIURA ,  Kensaku MAEDA

IPC分类号： H04N5/335 ,  H01L21/306

CPC分类号： H01L27/14625 ,  G02B5/201 ,  G02B5/223 ,  H01L27/14621 ,  H01L27/14685

摘要： A solid-state imaging device has: an imaging region in which a plurality of pixels each having a photoelectric conversion element are arranged, and a color filter. The color filter includes: filter components of a first color (2G), filter components of a second color (2R) formed by self-alignment and each being surrounded by the filter components of the first color (2G), and filter components of a third color (2B) formed by self-alignment and each being surrounded by the filter components of the first color (2G).

摘要翻译： 固态成像装置具有：配置有各自具有光电转换元件的多个像素的成像区域和滤色器。 滤色器包括：第一颜色（2G）的滤色镜部件，通过自对准形成的并且由第一颜色（2G）的滤光片部件包围的第二颜色（2R）的滤色镜部件，以及 第三颜色（2B）通过自对准形成，并且每个由第一颜色（2G）的滤光器部件包围。

公开(公告)号：US20120211879A1

公开(公告)日：2012-08-23

申请号：US13359075

申请日：2012-01-26

申请人： Kazuto WATANABE ,  Atsushi MATSUSHITA ,  Hiroshi HORIKOSHI ,  Iwao SUGIURA ,  Yuuji NISHIMURA ,  Syota YAMABATA

发明人： Kazuto WATANABE ,  Atsushi MATSUSHITA ,  Hiroshi HORIKOSHI ,  Iwao SUGIURA ,  Yuuji NISHIMURA ,  Syota YAMABATA

IPC分类号： H01L23/48 ,  H01L21/263 ,  H01L21/78

CPC分类号： H01L21/76841 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14683 ,  H01L27/14685 ,  H01L27/14687 ,  H01L2224/02166 ,  H01L2224/48463 ,  H01L2924/01021 ,  H01L2924/10253 ,  H01L2924/13091 ,  H01L2924/3025 ,  H01L2924/00

摘要： A manufacturing method of a semiconductor device includes exposing a wiring layer which is formed of an alloy including two or more types of metals having different standard electrode potentials, on one surface side of a semiconductor substrate and performing a plasma process of allowing plasma generated by a mixture gas of a gas including nitrogen and an inert gas or plasma generated by a gas including nitrogen to irradiate a range which includes an exposed surface of the wiring layer.

摘要翻译： 半导体器件的制造方法包括在半导体衬底的一个表面侧上暴露由包括具有不同标准电极电位的两种或更多种类型的金属的合金形成的布线层，并且执行等离子体处理，其允许由 包括氮气和惰性气体的混合气体或由包含氮气的气体产生的等离子体，以照射包括布线层的暴露表面的范围。

公开(公告)号：US20100155582A1

公开(公告)日：2010-06-24

申请号：US12634338

申请日：2009-12-09

申请人： Hideki HIRANO ,  Akiko OGINO ,  Kenju NISHIKIDO ,  Iwao SUGIURA ,  Haruhiko AJISAWA ,  Ikuo YOSHIHARA

发明人： Hideki HIRANO ,  Akiko OGINO ,  Kenju NISHIKIDO ,  Iwao SUGIURA ,  Haruhiko AJISAWA ,  Ikuo YOSHIHARA

IPC分类号： G01J1/04 ,  H01L31/0232 ,  H01L31/18 ,  H01L23/00

CPC分类号： H01L27/14625 ,  H01L27/14618 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/14645 ,  H01L29/0619 ,  H01L29/0623 ,  H01L2224/05 ,  Y10S148/07

摘要： A solid-state imaging device includes: a photodiode formed to be segmented with respect to each pixel in a pixel area in which plural pixels are integrated on a light receiving surface of a semiconductor substrate; an insulator film formed on the semiconductor substrate to cover the photodiode; a recessed part formed with respect to each of the pixels in the insulator film in an upper part of the photodiode; a first light transmission layer of a siloxane resin formed to fill the recessed part and configure an optical waveguide in the pixel area; a second light transmission layer formed to configure an on-chip lens with respect to each of the pixels in the pixel area; and a guard ring formed to surround an outer circumference of the pixel area to partition an inner area containing the pixel area and an outer dicing area.

摘要翻译： 一种固态成像装置，包括：形成为相对于其中多个像素集成在半导体衬底的光接收表面上的像素区域中的每个像素被分割的光电二极管; 形成在半导体衬底上以覆盖光电二极管的绝缘膜; 相对于光电二极管的上部中的绝缘体膜中的每个像素形成的凹部; 形成为填充凹部的硅氧烷树脂的第一透光层，并且构成像素区域中的光波导; 形成为相对于像素区域中的每个像素配置片上透镜的第二透光层; 以及保护环，其形成为围绕像素区域的外周，以分隔包含像素区域和外部切割区域的内部区域。