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公开(公告)号：US08367481B2
公开(公告)日：2013-02-05
申请号：US13397285
申请日：2012-02-15
申请人： Yong Liu , Qiuxiao Qian , JiangYuan Zhang , Mike Speed , JungTae Lee , Luke Huiyong Chung
发明人： Yong Liu , Qiuxiao Qian , JiangYuan Zhang , Mike Speed , JungTae Lee , Luke Huiyong Chung
IPC分类号： H01L21/56
CPC分类号： H01L23/49575 , H01L23/3107 , H01L23/49524 , H01L23/49551 , H01L23/49562 , H01L24/36 , H01L24/40 , H01L24/41 , H01L24/48 , H01L2224/40245 , H01L2224/45014 , H01L2224/48247 , H01L2224/4847 , H01L2224/48472 , H01L2224/73219 , H01L2224/73221 , H01L2924/00014 , H01L2924/01006 , H01L2924/01015 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H01L2924/00 , H01L2924/00012 , H01L2224/45015 , H01L2924/207 , H01L2224/37099
摘要： A molded, leadless packaged semiconductor multichip module includes 100 has four mosfets 10, 12, 14, 16 for a full bridge circuit. The mosfets may include two N-channel and two P-channel devices or four mosfets of the same type, but four N-channel are preferred. In module 100 there are two leadframes 30, 40 for assembling the mosfets. In particular, the two N-channel and two P-channel devices are disposed between two leadframes and encapsulated in an electrically insulating molding compound 84. The resulting package has four upper heat sinks 44.1-44.4 that are exposed in the molding compound 84 for transferring heat from the mosfets to the ambient environment. No wire bonds are required. This can significantly reduce the on resistance, RDSON. The top or source-drain lead frame 30 may be soldered to the sources and gates of the bridge mosfets.
摘要翻译： 包括100个的模制的无引线封装半导体多芯片模块具有用于全桥电路的四个mosfet 10,12,14,16。 MOSFET可以包括两个N沟道和两个P沟道器件或四个相同类型的MOS器件，但是优选四个N沟道。 在模块100中，存在用于组装mosfet的两个引线框30,40。 特别地，两个N沟道和两个P沟道器件设置在两个引线框之间并封装在电绝缘的模制化合物84中。所得到的封装具有四个上部散热器44.1-44.4，其暴露在模制化合物84中用于转移 从mosfet到周围环境的热量。 不需要引线键。 这可以显着降低RDSON的导通电阻。 顶部或源极 - 漏极引线框架30可以焊接到桥式MOSFET的源极和栅极。
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公开(公告)号：US20120149149A1
公开(公告)日：2012-06-14
申请号：US13397285
申请日：2012-02-15
申请人： Yong Liu , Qiuxiao Qian , JiangYuan Zhang , Mike Speed , Jung Tae Lee , Luke Huiyong Chung
发明人： Yong Liu , Qiuxiao Qian , JiangYuan Zhang , Mike Speed , Jung Tae Lee , Luke Huiyong Chung
IPC分类号： H01L21/56
CPC分类号： H01L23/49575 , H01L23/3107 , H01L23/49524 , H01L23/49551 , H01L23/49562 , H01L24/36 , H01L24/40 , H01L24/41 , H01L24/48 , H01L2224/40245 , H01L2224/45014 , H01L2224/48247 , H01L2224/4847 , H01L2224/48472 , H01L2224/73219 , H01L2224/73221 , H01L2924/00014 , H01L2924/01006 , H01L2924/01015 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H01L2924/00 , H01L2924/00012 , H01L2224/45015 , H01L2924/207 , H01L2224/37099
摘要： A molded, leadless packaged semiconductor multichip module includes 100 has four mosfets 10, 12, 14, 16 for a full bridge circuit. The mosfets may include two N-channel and two P-channel devices or four mosfets of the same type, but four N-channel are preferred. In module 100 there are two leadframes 30, 40 for assembling the mosfets. In particular, the two N-channel and two P-channel devices are disposed between two leadframes and encapsulated in an electrically insulating molding compound 84. The resulting package has four upper heat sinks 44.1-44.4 that are exposed in the molding compound 84 for transferring heat from the mosfets to the ambient environment. No wire bonds are required. This can significantly reduce the on resistance, RDSON. The top or source-drain lead frame 30 may be soldered to the sources and gates of the bridge mosfets.
摘要翻译： 包括100个的模制的无引线封装半导体多芯片模块具有用于全桥电路的四个mosfet 10,12,14,16。 MOSFET可以包括两个N沟道和两个P沟道器件或四个相同类型的MOS器件，但是优选四个N沟道。 在模块100中，存在用于组装mosfet的两个引线框30,40。 特别地，两个N沟道和两个P沟道器件设置在两个引线框之间并封装在电绝缘的模制化合物84中。所得到的封装具有四个上部散热器44.1-44.4，其暴露在模制化合物84中用于转移 从mosfet到周围环境的热量。 不需要引线键。 这可以显着降低RDSON的导通电阻。 顶部或源极 - 漏极引线框架30可以焊接到桥式MOSFET的源极和栅极。
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公开(公告)号：US20130005083A9
公开(公告)日：2013-01-03
申请号：US13397285
申请日：2012-02-15
申请人： Yong Liu , Qiuxiao Qian , JiangYuan Zhang , Mike Speed , Jung Tae Lee , Luke Huiyong Chung
发明人： Yong Liu , Qiuxiao Qian , JiangYuan Zhang , Mike Speed , Jung Tae Lee , Luke Huiyong Chung
IPC分类号： H01L21/56
CPC分类号： H01L23/49575 , H01L23/3107 , H01L23/49524 , H01L23/49551 , H01L23/49562 , H01L24/36 , H01L24/40 , H01L24/41 , H01L24/48 , H01L2224/40245 , H01L2224/45014 , H01L2224/48247 , H01L2224/4847 , H01L2224/48472 , H01L2224/73219 , H01L2224/73221 , H01L2924/00014 , H01L2924/01006 , H01L2924/01015 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H01L2924/00 , H01L2924/00012 , H01L2224/45015 , H01L2924/207 , H01L2224/37099
摘要： A molded, leadless packaged semiconductor multichip module includes 100 has four mosfets 10, 12, 14, 16 for a full bridge circuit. The mosfets may include two N-channel and two P-channel devices or four mosfets of the same type, but four N-channel are preferred. In module 100 there are two leadframes 30, 40 for assembling the mosfets. In particular, the two N-channel and two P-channel devices are disposed between two leadframes and encapsulated in an electrically insulating molding compound 84. The resulting package has four upper heat sinks 44.1-44.4 that are exposed in the molding compound 84 for transferring heat from the mosfets to the ambient environment. No wire bonds are required. This can significantly reduce the on resistance, RDSON. The top or source-drain lead frame 30 may be soldered to the sources and gates of the bridge mosfets.
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公开(公告)号：US08138585B2
公开(公告)日：2012-03-20
申请号：US12128130
申请日：2008-05-28
申请人： Yong Liu , Qiuxiao Qian , JiangYuan Zhang , Mike Speed , JungTae Lee , Huiyong Luke Chung
发明人： Yong Liu , Qiuxiao Qian , JiangYuan Zhang , Mike Speed , JungTae Lee , Huiyong Luke Chung
IPC分类号： H01L23/495
CPC分类号： H01L23/49575 , H01L23/3107 , H01L23/49524 , H01L23/49551 , H01L23/49562 , H01L24/36 , H01L24/40 , H01L24/41 , H01L24/48 , H01L2224/40245 , H01L2224/45014 , H01L2224/48247 , H01L2224/4847 , H01L2224/48472 , H01L2224/73219 , H01L2224/73221 , H01L2924/00014 , H01L2924/01006 , H01L2924/01015 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H01L2924/00 , H01L2924/00012 , H01L2224/45015 , H01L2924/207 , H01L2224/37099
摘要： A molded, leadless packaged semiconductor multichip module includes 100 has four mosfets 10, 12, 14, 16 for a full bridge circuit. The mosfets may include two N-channel and two P-channel devices or four mosfets of the same type, but four N-channel are preferred. In module 100 there are two leadframes 30, 40 for assembling the mosfets. In particular, the two N-channel and two P-channel devices are disposed between two leadframes and encapsulated in an electrically insulating molding compound 84. The resulting package has four upper heat sinks 44.1-44.4 that are exposed in the molding compound 84 for transferring heat from the mosfets to the ambient environment. No wire bonds are required. This can significantly reduce the on resistance, RDSON. The top or source-drain lead frame 30 may be soldered to the sources and gates of the bridge mosfets.
摘要翻译： 包括100个的模制的无引线封装半导体多芯片模块具有用于全桥电路的四个mosfet 10,12,14,16。 MOSFET可以包括两个N沟道和两个P沟道器件或四个相同类型的MOS器件，但是优选四个N沟道。 在模块100中，存在用于组装mosfet的两个引线框30,40。 特别地，两个N沟道和两个P沟道器件设置在两个引线框之间并封装在电绝缘的模制化合物84中。所得到的封装具有四个上部散热器44.1-44.4，其暴露在模制化合物84中用于转移 从mosfet到周围环境的热量。 不需要引线键。 这可以显着降低RDSON的导通电阻。 顶部或源极 - 漏极引线框架30可以焊接到桥式MOSFET的源极和栅极。
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公开(公告)号：US20090294936A1
公开(公告)日：2009-12-03
申请号：US12128130
申请日：2008-05-28
申请人： Yong Liu , Qiuxiao Qian , JiangYuan Zhang , Mike Speed , JungTae Lee , Huiyong Luke Chung
发明人： Yong Liu , Qiuxiao Qian , JiangYuan Zhang , Mike Speed , JungTae Lee , Huiyong Luke Chung
IPC分类号： H01L23/495 , H01L21/56
CPC分类号： H01L23/49575 , H01L23/3107 , H01L23/49524 , H01L23/49551 , H01L23/49562 , H01L24/36 , H01L24/40 , H01L24/41 , H01L24/48 , H01L2224/40245 , H01L2224/45014 , H01L2224/48247 , H01L2224/4847 , H01L2224/48472 , H01L2224/73219 , H01L2224/73221 , H01L2924/00014 , H01L2924/01006 , H01L2924/01015 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H01L2924/00 , H01L2924/00012 , H01L2224/45015 , H01L2924/207 , H01L2224/37099
摘要： A molded, leadless packaged semiconductor multichip module includes 100 has four mosfets 10, 12, 14, 16 for a full bridge circuit. The mosfets may include two N-channel and two P-channel devices or four mosfets of the same type, but four N-channel are preferred. In module 100 there are two leadframes 30, 40 for assembling the mosfets. In particular, the two N-channel and two P-channel devices are disposed between two leadframes and encapsulated in an electrically insulating molding compound 84. The resulting package has four upper heat sinks 44.1-44.4 that are exposed in the molding compound 84 for transferring heat from the mosfets to the ambient environment. No wire bonds are required. This can significantly reduce the on resistance, RDSON. The top or source-drain lead frame 30 may be soldered to the sources and gates of the bridge mosfets.
摘要翻译： 包括100个的模制的无引线封装半导体多芯片模块具有用于全桥电路的四个mosfet 10,12,14,16。 MOSFET可以包括两个N沟道和两个P沟道器件或四个相同类型的MOS器件，但是优选四个N沟道。 在模块100中，存在用于组装mosfet的两个引线框30,40。 特别地，两个N沟道和两个P沟道器件设置在两个引线框之间并封装在电绝缘的模制化合物84中。所得到的封装具有四个上部散热器44.1-44.4，其暴露在模制化合物84中用于转移 从mosfet到周围环境的热量。 不需要引线键。 这可以显着降低RDSON的导通电阻。 顶部或源极 - 漏极引线框架30可以焊接到桥式MOSFET的源极和栅极。
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