公开(公告)号：US08367481B2

公开(公告)日：2013-02-05

申请号：US13397285

申请日：2012-02-15

申请人： Yong Liu ,  Qiuxiao Qian ,  JiangYuan Zhang ,  Mike Speed ,  JungTae Lee ,  Luke Huiyong Chung

发明人： Yong Liu ,  Qiuxiao Qian ,  JiangYuan Zhang ,  Mike Speed ,  JungTae Lee ,  Luke Huiyong Chung

IPC分类号： H01L21/56

CPC分类号： H01L23/49575 ,  H01L23/3107 ,  H01L23/49524 ,  H01L23/49551 ,  H01L23/49562 ,  H01L24/36 ,  H01L24/40 ,  H01L24/41 ,  H01L24/48 ,  H01L2224/40245 ,  H01L2224/45014 ,  H01L2224/48247 ,  H01L2224/4847 ,  H01L2224/48472 ,  H01L2224/73219 ,  H01L2224/73221 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2224/37099

摘要： A molded, leadless packaged semiconductor multichip module includes 100 has four mosfets 10, 12, 14, 16 for a full bridge circuit. The mosfets may include two N-channel and two P-channel devices or four mosfets of the same type, but four N-channel are preferred. In module 100 there are two leadframes 30, 40 for assembling the mosfets. In particular, the two N-channel and two P-channel devices are disposed between two leadframes and encapsulated in an electrically insulating molding compound 84. The resulting package has four upper heat sinks 44.1-44.4 that are exposed in the molding compound 84 for transferring heat from the mosfets to the ambient environment. No wire bonds are required. This can significantly reduce the on resistance, RDSON. The top or source-drain lead frame 30 may be soldered to the sources and gates of the bridge mosfets.

摘要翻译： 包括100个的模制的无引线封装半导体多芯片模块具有用于全桥电路的四个mosfet 10,12,14,16。 MOSFET可以包括两个N沟道和两个P沟道器件或四个相同类型的MOS器件，但是优选四个N沟道。 在模块100中，存在用于组装mosfet的两个引线框30,40。 特别地，两个N沟道和两个P沟道器件设置在两个引线框之间并封装在电绝缘的模制化合物84中。所得到的封装具有四个上部散热器44.1-44.4，其暴露在模制化合物84中用于转移 从mosfet到周围环境的热量。 不需要引线键。 这可以显着降低RDSON的导通电阻。 顶部或源极 - 漏极引线框架30可以焊接到桥式MOSFET的源极和栅极。

公开(公告)号：US20130005083A9

公开(公告)日：2013-01-03

申请号：US13397285

申请日：2012-02-15

申请人： Yong Liu ,  Qiuxiao Qian ,  JiangYuan Zhang ,  Mike Speed ,  Jung Tae Lee ,  Luke Huiyong Chung

发明人： Yong Liu ,  Qiuxiao Qian ,  JiangYuan Zhang ,  Mike Speed ,  Jung Tae Lee ,  Luke Huiyong Chung

IPC分类号： H01L21/56

CPC分类号： H01L23/49575 ,  H01L23/3107 ,  H01L23/49524 ,  H01L23/49551 ,  H01L23/49562 ,  H01L24/36 ,  H01L24/40 ,  H01L24/41 ,  H01L24/48 ,  H01L2224/40245 ,  H01L2224/45014 ,  H01L2224/48247 ,  H01L2224/4847 ,  H01L2224/48472 ,  H01L2224/73219 ,  H01L2224/73221 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2224/37099

摘要： A molded, leadless packaged semiconductor multichip module includes 100 has four mosfets 10, 12, 14, 16 for a full bridge circuit. The mosfets may include two N-channel and two P-channel devices or four mosfets of the same type, but four N-channel are preferred. In module 100 there are two leadframes 30, 40 for assembling the mosfets. In particular, the two N-channel and two P-channel devices are disposed between two leadframes and encapsulated in an electrically insulating molding compound 84. The resulting package has four upper heat sinks 44.1-44.4 that are exposed in the molding compound 84 for transferring heat from the mosfets to the ambient environment. No wire bonds are required. This can significantly reduce the on resistance, RDSON. The top or source-drain lead frame 30 may be soldered to the sources and gates of the bridge mosfets.

公开(公告)号：US20120149149A1

公开(公告)日：2012-06-14

申请号：US13397285

申请日：2012-02-15

申请人： Yong Liu ,  Qiuxiao Qian ,  JiangYuan Zhang ,  Mike Speed ,  Jung Tae Lee ,  Luke Huiyong Chung

发明人： Yong Liu ,  Qiuxiao Qian ,  JiangYuan Zhang ,  Mike Speed ,  Jung Tae Lee ,  Luke Huiyong Chung

IPC分类号： H01L21/56

CPC分类号： H01L23/49575 ,  H01L23/3107 ,  H01L23/49524 ,  H01L23/49551 ,  H01L23/49562 ,  H01L24/36 ,  H01L24/40 ,  H01L24/41 ,  H01L24/48 ,  H01L2224/40245 ,  H01L2224/45014 ,  H01L2224/48247 ,  H01L2224/4847 ,  H01L2224/48472 ,  H01L2224/73219 ,  H01L2224/73221 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2224/37099

摘要： A molded, leadless packaged semiconductor multichip module includes 100 has four mosfets 10, 12, 14, 16 for a full bridge circuit. The mosfets may include two N-channel and two P-channel devices or four mosfets of the same type, but four N-channel are preferred. In module 100 there are two leadframes 30, 40 for assembling the mosfets. In particular, the two N-channel and two P-channel devices are disposed between two leadframes and encapsulated in an electrically insulating molding compound 84. The resulting package has four upper heat sinks 44.1-44.4 that are exposed in the molding compound 84 for transferring heat from the mosfets to the ambient environment. No wire bonds are required. This can significantly reduce the on resistance, RDSON. The top or source-drain lead frame 30 may be soldered to the sources and gates of the bridge mosfets.

摘要翻译： 包括100个的模制的无引线封装半导体多芯片模块具有用于全桥电路的四个mosfet 10,12,14,16。 MOSFET可以包括两个N沟道和两个P沟道器件或四个相同类型的MOS器件，但是优选四个N沟道。 在模块100中，存在用于组装mosfet的两个引线框30,40。 特别地，两个N沟道和两个P沟道器件设置在两个引线框之间并封装在电绝缘的模制化合物84中。所得到的封装具有四个上部散热器44.1-44.4，其暴露在模制化合物84中用于转移 从mosfet到周围环境的热量。 不需要引线键。 这可以显着降低RDSON的导通电阻。 顶部或源极 - 漏极引线框架30可以焊接到桥式MOSFET的源极和栅极。

公开(公告)号：US08138585B2

公开(公告)日：2012-03-20

申请号：US12128130

申请日：2008-05-28

申请人： Yong Liu ,  Qiuxiao Qian ,  JiangYuan Zhang ,  Mike Speed ,  JungTae Lee ,  Huiyong Luke Chung

发明人： Yong Liu ,  Qiuxiao Qian ,  JiangYuan Zhang ,  Mike Speed ,  JungTae Lee ,  Huiyong Luke Chung

IPC分类号： H01L23/495

CPC分类号： H01L23/49575 ,  H01L23/3107 ,  H01L23/49524 ,  H01L23/49551 ,  H01L23/49562 ,  H01L24/36 ,  H01L24/40 ,  H01L24/41 ,  H01L24/48 ,  H01L2224/40245 ,  H01L2224/45014 ,  H01L2224/48247 ,  H01L2224/4847 ,  H01L2224/48472 ,  H01L2224/73219 ,  H01L2224/73221 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2224/37099

摘要： A molded, leadless packaged semiconductor multichip module includes 100 has four mosfets 10, 12, 14, 16 for a full bridge circuit. The mosfets may include two N-channel and two P-channel devices or four mosfets of the same type, but four N-channel are preferred. In module 100 there are two leadframes 30, 40 for assembling the mosfets. In particular, the two N-channel and two P-channel devices are disposed between two leadframes and encapsulated in an electrically insulating molding compound 84. The resulting package has four upper heat sinks 44.1-44.4 that are exposed in the molding compound 84 for transferring heat from the mosfets to the ambient environment. No wire bonds are required. This can significantly reduce the on resistance, RDSON. The top or source-drain lead frame 30 may be soldered to the sources and gates of the bridge mosfets.

摘要翻译： 包括100个的模制的无引线封装半导体多芯片模块具有用于全桥电路的四个mosfet 10,12,14,16。 MOSFET可以包括两个N沟道和两个P沟道器件或四个相同类型的MOS器件，但是优选四个N沟道。 在模块100中，存在用于组装mosfet的两个引线框30,40。 特别地，两个N沟道和两个P沟道器件设置在两个引线框之间并封装在电绝缘的模制化合物84中。所得到的封装具有四个上部散热器44.1-44.4，其暴露在模制化合物84中用于转移 从mosfet到周围环境的热量。 不需要引线键。 这可以显着降低RDSON的导通电阻。 顶部或源极 - 漏极引线框架30可以焊接到桥式MOSFET的源极和栅极。

公开(公告)号：US20090294936A1

公开(公告)日：2009-12-03

申请号：US12128130

申请日：2008-05-28

申请人： Yong Liu ,  Qiuxiao Qian ,  JiangYuan Zhang ,  Mike Speed ,  JungTae Lee ,  Huiyong Luke Chung

发明人： Yong Liu ,  Qiuxiao Qian ,  JiangYuan Zhang ,  Mike Speed ,  JungTae Lee ,  Huiyong Luke Chung

IPC分类号： H01L23/495 ,  H01L21/56

CPC分类号： H01L23/49575 ,  H01L23/3107 ,  H01L23/49524 ,  H01L23/49551 ,  H01L23/49562 ,  H01L24/36 ,  H01L24/40 ,  H01L24/41 ,  H01L24/48 ,  H01L2224/40245 ,  H01L2224/45014 ,  H01L2224/48247 ,  H01L2224/4847 ,  H01L2224/48472 ,  H01L2224/73219 ,  H01L2224/73221 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2224/37099

摘要： A molded, leadless packaged semiconductor multichip module includes 100 has four mosfets 10, 12, 14, 16 for a full bridge circuit. The mosfets may include two N-channel and two P-channel devices or four mosfets of the same type, but four N-channel are preferred. In module 100 there are two leadframes 30, 40 for assembling the mosfets. In particular, the two N-channel and two P-channel devices are disposed between two leadframes and encapsulated in an electrically insulating molding compound 84. The resulting package has four upper heat sinks 44.1-44.4 that are exposed in the molding compound 84 for transferring heat from the mosfets to the ambient environment. No wire bonds are required. This can significantly reduce the on resistance, RDSON. The top or source-drain lead frame 30 may be soldered to the sources and gates of the bridge mosfets.

摘要翻译： 包括100个的模制的无引线封装半导体多芯片模块具有用于全桥电路的四个mosfet 10,12,14,16。 MOSFET可以包括两个N沟道和两个P沟道器件或四个相同类型的MOS器件，但是优选四个N沟道。 在模块100中，存在用于组装mosfet的两个引线框30,40。 特别地，两个N沟道和两个P沟道器件设置在两个引线框之间并封装在电绝缘的模制化合物84中。所得到的封装具有四个上部散热器44.1-44.4，其暴露在模制化合物84中用于转移 从mosfet到周围环境的热量。 不需要引线键。 这可以显着降低RDSON的导通电阻。 顶部或源极 - 漏极引线框架30可以焊接到桥式MOSFET的源极和栅极。

公开(公告)号：US07915721B2

公开(公告)日：2011-03-29

申请号：US12046734

申请日：2008-03-12

申请人： Yong Liu ,  Jiangyuan Zhang ,  Qiuxiao Qian

发明人： Yong Liu ,  Jiangyuan Zhang ,  Qiuxiao Qian

IPC分类号： H01L23/02

CPC分类号： H01L23/49575 ,  H01L23/49524 ,  H01L23/49551 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/05554 ,  H01L2224/371 ,  H01L2224/37124 ,  H01L2224/37147 ,  H01L2224/40245 ,  H01L2224/48095 ,  H01L2224/48247 ,  H01L2224/49171 ,  H01L2924/00014 ,  H01L2924/01046 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/07802 ,  H01L2924/1305 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor die package. Embodiments of the semiconductor die package are usable in backlight circuitry. Systems in packages may include a bridge circuit or a part thereof, and a integrated circuit die, such as a driver die, encapsulated by a molding material or other package. The bridge circuit may be stacked on opposing surfaces of a leadframe.

摘要翻译： 半导体管芯封装。 半导体管芯封装的实施例可用于背光电路。 封装中的系统可以包括桥接电路或其一部分，以及由模制材料或其它封装封装的集成电路管芯，例如驱动器管芯。 桥接电路可以堆叠在引线框架的相对表面上。

公开(公告)号：US08674490B2

公开(公告)日：2014-03-18

申请号：US13034584

申请日：2011-02-24

申请人： Yong Liu ,  Jiangyuan Zhang ,  Qiuxiao Qian

发明人： Yong Liu ,  Jiangyuan Zhang ,  Qiuxiao Qian

IPC分类号： H01L23/02

CPC分类号： H01L23/49575 ,  H01L23/49524 ,  H01L23/49551 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/05554 ,  H01L2224/371 ,  H01L2224/37124 ,  H01L2224/37147 ,  H01L2224/40245 ,  H01L2224/48095 ,  H01L2224/48247 ,  H01L2224/49171 ,  H01L2924/00014 ,  H01L2924/01046 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/07802 ,  H01L2924/1305 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor die package. Embodiments of the semiconductor die package are usable in backlight circuitry. Systems in packages may include a bridge circuit or a part thereof, and a integrated circuit die, such as a driver die, encapsulated by a molding material or other package. The bridge circuit may be stacked on opposing surfaces of a leadframe.

摘要翻译： 半导体管芯封装。 半导体管芯封装的实施例可用于背光电路。 封装中的系统可以包括桥接电路或其一部分，以及由模制材料或其它封装封装的集成电路管芯，例如驱动器管芯。 桥接电路可以堆叠在引线框架的相对表面上。

公开(公告)号：US20110140255A1

公开(公告)日：2011-06-16

申请号：US13034584

申请日：2011-02-24

申请人： Yong Liu ,  Jiangyuan Zhang ,  Qiuxiao Qian

发明人： Yong Liu ,  Jiangyuan Zhang ,  Qiuxiao Qian

IPC分类号： H01L23/495 ,  H01L21/50

CPC分类号： H01L23/49575 ,  H01L23/49524 ,  H01L23/49551 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/05554 ,  H01L2224/371 ,  H01L2224/37124 ,  H01L2224/37147 ,  H01L2224/40245 ,  H01L2224/48095 ,  H01L2224/48247 ,  H01L2224/49171 ,  H01L2924/00014 ,  H01L2924/01046 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/07802 ,  H01L2924/1305 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor die package. Embodiments of the semiconductor die package are usable in backlight circuitry. Systems in packages may include a bridge circuit or a part thereof, and a integrated circuit die, such as a driver die, encapsulated by a molding material or other package. The bridge circuit may be stacked on opposing surfaces of a leadframe.

摘要翻译： 半导体管芯封装。 半导体管芯封装的实施例可用于背光电路。 封装中的系统可以包括桥接电路或其一部分，以及由模制材料或其它封装封装的集成电路管芯，例如驱动器管芯。 桥接电路可以堆叠在引线框架的相对表面上。

公开(公告)号：US20090230518A1

公开(公告)日：2009-09-17

申请号：US12046734

申请日：2008-03-12

申请人： Yong Liu ,  Jiangyuan Zhang ,  Qiuxiao Qian

发明人： Yong Liu ,  Jiangyuan Zhang ,  Qiuxiao Qian

IPC分类号： H01L23/495 ,  H01L21/00

CPC分类号： H01L23/49575 ,  H01L23/49524 ,  H01L23/49551 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/05554 ,  H01L2224/371 ,  H01L2224/37124 ,  H01L2224/37147 ,  H01L2224/40245 ,  H01L2224/48095 ,  H01L2224/48247 ,  H01L2224/49171 ,  H01L2924/00014 ,  H01L2924/01046 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/07802 ,  H01L2924/1305 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor die package. Embodiments of the semiconductor die package are usable in backlight circuitry. Systems in packages may include a bridge circuit or a part thereof, and a integrated circuit die, such as a driver die, encapsulated by a molding material or other package. The bridge circuit may be stacked on opposing surfaces of a leadframe.

摘要翻译： 半导体管芯封装。 半导体管芯封装的实施例可用于背光电路。 封装中的系统可以包括桥接电路或其一部分，以及由模制材料或其它封装封装的集成电路管芯，例如驱动器管芯。 桥接电路可以堆叠在引线框架的相对表面上。

公开(公告)号：US07829988B2

公开(公告)日：2010-11-09

申请号：US12235227

申请日：2008-09-22

申请人： Yong Liu ,  Howard Allen ,  Qiuxiao Qian

发明人： Yong Liu ,  Howard Allen ,  Qiuxiao Qian

IPC分类号： H01L21/50

CPC分类号： H01L23/4951 ,  H01L23/3107 ,  H01L23/49572 ,  H01L23/49861 ,  H01L25/105 ,  H01L2224/0554 ,  H01L2224/05573 ,  H01L2224/13025 ,  H01L2224/16 ,  H01L2225/1029 ,  H01L2225/1041 ,  H01L2924/00014 ,  H01L2924/13091 ,  H01L2924/19105 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

摘要： Pre-molded component packages that may be as thin as a leadframe for a semiconductor die, systems using the same, and methods of making the same are disclosed. The leads of an exemplary package are exposed at both surfaces at the leadframe. The packages may be stacked upon one another and electrically coupled at the exposed portions of their leads.

摘要翻译： 公开了可以与用于半导体管芯的引线框一样薄的预成型部件封装，使用其的系统及其制造方法。 示例性包装的引线在引线框架的两个表面处露出。 封装可以彼此堆叠并且在引线的暴露部分处电耦合。