摘要:
Disclosed is a compensated current differential relaying method and system for protecting a transformer more correctly by calculating and estimating an exciting current including a core-loss current and a magnetizing current, and, in particular, to a compensated current differential relaying method and system which can protect the transformer correctly irrespective of the level of remanent flux.
摘要:
Disclosed is a method for detecting saturation of a current transformer. The method determines whether or not a change of a secondary current generated in a current transformer is due to the saturation of the current transformer.
摘要:
The present invention relates to a method for preventing the unwanted maloperation of a protective relay system that is caused by the imprecise detection of an actual secondary current value resulting from a measured secondary current being distorted. The method comprises the steps of calculating difference values having at least second order for sampled secondary currents; comparing absolute values of the difference values with a predetermined critical value, and determining a saturation starting moment of a current transformer when one of the absolute values exceeds the predetermined critical value; obtaining a magnetizing current at the saturation starting moment using the difference values if the saturation starting moment is determined, and obtaining a magnetic flux value in a steel core of the current transformer from a magnetization curve using the magnetizing current; calculating a magnetic flux value at a time after the saturation starting moment using a secondary current value measured at that time and the magnetic flux value obtained at the saturation starting moment so as to obtain a secondary current value consistent with a current transformation ratio at that time; obtaining a magnetizing current at that time from the magnetization curve using the magnetic flux value calculated at that time; and obtaining the secondary current value consistent with the current transformation ratio by adding the obtained magnetizing current and the measured secondary current value.
摘要:
Disclosed is a compensated current differential relaying method and system for protecting a transformer more correctly by calculating and estimating an exciting current including a core-loss current and a magnetizing current, and, in particular, to a compensated current differential relaying method and system which can protect the transformer correctly irrespective of the level of remanent flux.
摘要:
A method for preventing the unwanted maloperation of a protective relay system that is caused by the imprecise detection of an actual secondary current value resulting from a measured secondary current being distorted comprises the steps of calculating difference values for sampled secondary currents; comparing absolute values of the difference values with a predetermined critical value, and determining a saturation starting moment of a current transformer when one of the absolute values exceeds the predetermined critical value; obtaining a magnetizing current at the saturation starting moment using the difference values if the saturation starting moment is determined, and obtaining a magnetic flux value in a steel core of the current transformer from a magnetization curve using the magnetizing current; calculating a magnetic flux value at a time after the saturation starting moment using a secondary current value measured at that time and the magnetic flux value obtained at the saturation starting moment so as to obtain a secondary current value consistent with a current transformation ratio at that time; obtaining a magnetizing current at that time from the magnetization curve using the magnetic flux value calculated at that time; and obtaining the secondary current value consistent with the current transformation ratio by adding the obtained magnetizing current and the measured secondary current value.
摘要:
A redundancy circuit in a semiconductor memory device comprises a fuse set controller configured to output a redundancy enable signal enabled according to applied address signals; a redundant selector; a spare redundant selector; and a spare fuse controller configured to be controlled by the redundancy enable signal, and to output a selection control signal that selects at least one of the redundant selector and the spare redundant selector in accordance with an internal fuse option.
摘要:
The present invention is related to a negative voltage generating circuit for reliably providing the semiconductor integrated circuit (IC) with a negative voltage. An electric charge pumping device generates a negative voltage by pumping an electric charge to a predetermined level supplied to one of a first node and a second node. A controlling device provides first and second pumping clock signal being clocked alternately every predetermined interval in response to a level of the negative voltage. A pumping controller controls an amount of electric charge supplied to the first node and the second node in response to the first and second pumping clock signals. Further, a reset controller resets the first node and the second node of the electric charge pumping means as the level of the negative voltage when the first and second pumping clock signals are inactivated.
摘要:
A redundancy circuit in a semiconductor memory device comprises a fuse set controller configured to output a redundancy enable signal enabled according to applied address signals; a redundant selector; a spare redundant selector; and a spare fuse controller configured to be controlled by the redundancy enable signal, and to output a selection control signal that selects at least one of the redundant selector and the spare redundant selector in accordance with an internal fuse option.
摘要:
A semiconductor integrated circuit comprising: a first voltage generator configured to generate a first voltage in response to activation of a first enable signal, wherein the first enable signal is generated by detecting a level of the first voltage; and a second voltage generator configured to generate a second voltage in response to activation of at least one of the first enable signal and a second enable signal, wherein the second enable signal is generated by detecting a level of the second voltage.
摘要:
A synchronous semiconductor memory device of the present invention includes: an operation controller for outputting a column active sense pulse in response to a column address and a column command signal; a shift register controller, activated in response to the column active sense pulse, for dividing a clock signal by N to thereby output a divided clock signal, N being a positive integer greater than 1; a plurality of shift registers connected in series and synchronized with the divided clock signal, wherein each shift register transmits the column active sense pulse to the next shift register; and a column active control signal generator for logically combining outputs of the shift registers to thereby generate a column active control signal.