公开(公告)号：US20120103418A1

公开(公告)日：2012-05-03

申请号：US13207825

申请日：2011-08-11

Applicant: Yong-Duck CHUNG ,  Won Seok Han

Inventor： Yong-Duck CHUNG ,  Won Seok Han

IPC: H01L31/0216 ,  H01L31/18

CPC classification number: H01L31/0322 ,  H01L31/02168 ,  H01L31/03923 ,  H01L31/068 ,  Y02E10/541 ,  Y02E10/547 ,  Y02P70/521

Abstract: Provided is a single junction type CIGS thin film solar cell, which includes a CIGS light absorption layer manufactured using a single junction. The single junction type CIGS thin film solar cell includes a substrate, a back contact deposited on the substrate, a light absorption layer deposited on the back contact and including a P type CIGS layer and an N type CIGS layer coupled to the P type CIGS layer using a single junction, and a reflection prevention film deposited on the light absorption layer.

Abstract translation: 提供了一种单结型CIGS薄膜太阳能电池，其包括使用单一结制造的CIGS光吸收层。 单结型CIGS薄膜太阳能电池包括基板，沉积在基板上的背面接触层，沉积在背面接触上的光吸收层，包括P型CIGS层和耦合到P型CIGS层的N型CIGS层 使用单结，以及沉积在光吸收层上的防反射膜。

公开(公告)号：US20120178205A1

公开(公告)日：2012-07-12

申请号：US13340723

申请日：2011-12-30

Applicant: Yong-Duck CHUNG

Inventor： Yong-Duck CHUNG

IPC: H01L31/18

CPC classification number: H01L21/02422 ,  H01L21/02425 ,  H01L21/02491 ,  H01L21/02568 ,  H01L21/02631 ,  H01L31/02168 ,  H01L31/0322 ,  H01L31/03923 ,  H01L31/0749 ,  H01L31/18 ,  Y02E10/541 ,  Y02P70/521

Abstract: Provided is a method of manufacturing a solar cell. The method includes: preparing a substrate with a rear electrode; and forming a copper indium gallium selenide (CIGS) based light absorbing layer on the rear electrode at a substrate temperature of room temperature to about 350° C., wherein the forming of the CIGS based light absorbing layer includes projecting an electron beam on the CIGS based light absorbing layer.

Abstract translation: 提供一种制造太阳能电池的方法。 该方法包括：准备具有后电极的基板; 以及在室温至约350℃的衬底温度下在后电极上形成铜铟镓硒（CIGS）基光吸收层，其中形成CIGS系光吸收层包括在CIGS上投射电子束 基光吸收层。

公开(公告)号：US20130095600A1

公开(公告)日：2013-04-18

申请号：US13530370

申请日：2012-06-22

Applicant: Kyung Hyun KIM ,  Je Ha KIM ,  Hae-won CHOI ,  Dae-Hyung CHO ,  Yong-Duck CHUNG

Inventor： Kyung Hyun KIM ,  Je Ha KIM ,  Hae-won CHOI ,  Dae-Hyung CHO ,  Yong-Duck CHUNG

IPC: H01L31/075 ,  H01L31/18

CPC classification number: H01L31/0749 ,  H01L31/0322 ,  Y02E10/541 ,  Y02P70/521

Abstract: Methods for manufacturing a solar cell are provided. The method may include forming a lower electrode on a substrate, forming a light absorption layer on the lower electrode, forming a buffer layer on the light absorption layer, and forming a window layer on the buffer layer. The window layer may include an intrinsic layer and the transparent electrode which have electric characteristics different from each other, respectively. The intrinsic layer and the transparent electrode may be formed by a sputtering process using a single target formed of metal oxide doped with impurities.

Abstract translation: 提供太阳能电池的制造方法。 该方法可以包括在基板上形成下电极，在下电极上形成光吸收层，在光吸收层上形成缓冲层，在缓冲层上形成窗口层。 窗口层可以分别包括具有彼此不同的电特性的本征层和透明电极。 本征层和透明电极可以通过使用由掺杂有杂质的金属氧化物形成的单个靶的溅射工艺形成。

公开(公告)号：US20120125426A1

公开(公告)日：2012-05-24

申请号：US13191877

申请日：2011-07-27

Applicant: Yong-Duck CHUNG

Inventor： Yong-Duck CHUNG

IPC: H01L31/0224

CPC classification number: H01L31/0749 ,  H01L31/02168 ,  H01L31/022425 ,  H01L31/022483 ,  Y02E10/541

Abstract: Provided is a compound semiconductor solar cell. The compound semiconductor solar cell may include a back electrode provided on a substrate, a hole injection layer provided on the back electrode, a copper indium gallium selenide (CIGS) based optical absorption layer provided on the hole injection layer, and a front transparent electrode provided on the optical absorption layer.

Abstract translation: 提供了一种化合物半导体太阳能电池。 化合物半导体太阳能电池可以包括设置在基板上的背面电极，设置在背面电极上的空穴注入层，设置在空穴注入层上的基于铜铟镓硒（CIGS）的光吸收层，以及设置在前部透明电极 在光吸收层上。