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    MEMORY DEVICE, MEMORY SYSTEM, METHOD OF OPERATING MEMORY DEVICE, AND METHOD OF OPERATING MEMORY SYSTEM
    1.
    发明申请
    MEMORY DEVICE, MEMORY SYSTEM, METHOD OF OPERATING MEMORY DEVICE, AND METHOD OF OPERATING MEMORY SYSTEM 有权
    存储器件，存储器系统，操作存储器件的方法和操作存储器系统的方法

    公开(公告)号：US20170062059A1

    公开(公告)日：2017-03-02

    申请号：US15245162

    申请日：2016-08-23

    申请人： Yoon KIM ,  Dong-chan KIM ,  Ji-sang LEE

    发明人： Yoon KIM ,  Dong-chan KIM ,  Ji-sang LEE

    IPC分类号： G11C16/14 ,  G11C16/34 ,  G11C16/08 ,  G11C16/04

    CPC分类号： G11C16/14 ,  G11C11/5635 ,  G11C16/0483 ,  G11C16/107 ,  G11C16/349

    摘要： A memory device, comprising: a memory cell array including a plurality of NAND strings, each NAND string including a plurality of memory cells respectively connected to a plurality of word lines vertically stacked on a substrate; and a control logic configured to generate a pre-programming control signal for memory cells of a first NAND string of the NAND strings such that, before erasing the memory cells of the first NAND string, pre-programming voltages applied to the word lines coupled to the corresponding memory cells of the first NAND string vary based on an operating characteristic of the corresponding memory cells.

    摘要翻译： 一种存储器件，包括：包括多个NAND串的存储单元阵列，每个NAND串包括分别连接到垂直堆叠在衬底上的多个字线的多个存储器单元; 以及控制逻辑，被配置为为NAND串的第一NAND串的存储器单元生成预编程控制信号，使得在擦除第一NAND串的存储单元之前，将预编程电压施加到耦合到 第一NAND串的对应存储单元基于相应的存储单元的工作特性而变化。

    METHODS OF FORMING AND OPERATING SEMICONDUCTOR DEVICE
    2.
    发明申请
    METHODS OF FORMING AND OPERATING SEMICONDUCTOR DEVICE 有权
    形成和操作半导体器件的方法

    公开(公告)号：US20110194356A1

    公开(公告)日：2011-08-11

    申请号：US13087643

    申请日：2011-04-15

    申请人： Wook-Hyun KWON ,  Byung-Gook PARK ,  Yun-Heub SONG ,  Yoon KIM

    发明人： Wook-Hyun KWON ,  Byung-Gook PARK ,  Yun-Heub SONG ,  Yoon KIM

    IPC分类号： G11C11/34 ,  H01L21/336

    CPC分类号： H01L27/11568 ,  H01L29/66833 ,  H01L29/7923

    摘要： Provided are a semiconductor device and a methods of forming and operating the semiconductor device. The semiconductor device may include active pillars extending from a semiconductor substrate and disposed two dimensionally disposed on the semiconductor substrate, upper interconnections connecting the active pillars along one direction, lower interconnections crossing the upper interconnections and disposed between the active pillars, word lines crossing the upper interconnections and disposed between the active pillars, and data storage patterns disposed between the word lines and the active pillars.

    摘要翻译： 提供半导体器件以及形成和操作半导体器件的方法。 半导体器件可以包括从半导体衬底延伸并且二维地设置在半导体衬底上的有源柱，在一个方向上连接有源柱的上部互连，与上部互连交叉的下部互连，并且设置在有源柱之间，跨越上部的字线 互连并且布置在活动柱之间，以及布置在字线和活动柱之间的数据存储图案。