公开(公告)号：US20140134380A1

公开(公告)日：2014-05-15

申请号：US14232369

申请日：2012-08-22

申请人： Yoon Mo Yoon ,  Kwan Young Cho ,  Uk Oh ,  Jong Pil Chun ,  Ki Chull Yun ,  Yong Dae Park

发明人： Yoon Mo Yoon ,  Kwan Young Cho ,  Uk Oh ,  Jong Pil Chun ,  Ki Chull Yun ,  Yong Dae Park

IPC分类号： C08L67/02

CPC分类号： C08L67/02 ,  C08K3/26 ,  C08K2003/265 ,  C08L23/02 ,  C08L23/04 ,  C08L23/06 ,  C08L23/10 ,  C08L23/12 ,  C08L83/04 ,  C08L101/16 ,  Y10T428/23

摘要： A biodegradable resin composition is provided. More particularly, a biodegradable resin composition for a core of a drain board, which has excellent extrusion productivity and thus improves productivity by improving physical properties, for example, reducing contractibility and elasticity recovery, according to original characteristics of a biodegradable resin without degradation in biodegrability of the biodegradable resin by mixing the biodegradable resin with an additional material for improving processibility in suitable amounts, a core of a drain board using the same, and a method of manufacturing a drain board.The biodegradable resin composition is prepared by mixing 5 to 60 parts by weight of calcium carbonate, 1 to 10 parts by weight of a thermoplastic resin, and 0.1 to 5 parts by weight of a lubricant with respect to 100 parts by weight of a biodegradable polymer compound, or mixing 1 to 5 parts by weight of the additives, which are fowled in a pellet state to have 60 to 90 parts by weight of calcium carbonate, 5 to 15 parts by weight of a thermoplastic resin, and 1 to 5 parts by weight of a lubricant, with respect to 100 parts by weight of a biodegradable polymer compound.

摘要翻译： 提供可生物降解的树脂组合物。 更具体地，涉及一种用于排水板芯的可生物降解的树脂组合物，其具有优异的挤出生产率，并且通过根据生物可降解树脂的原始特性改善物理性能，例如降低收缩性和弹性回复而提高生产率，而不降低生物降解性 通过将可生物降解树脂与另外的材料混合以提高合适量的加工性，使用该可生物降解树脂的排水板的芯和制造排水板的方法。 可生物降解的树脂组合物通过混合5〜60重量份的碳酸钙，1〜10重量份的热塑性树脂和0.1〜5重量份的润滑剂，相对于100重量份的生物可降解聚合物 化合物，或将1〜5重量份添加剂混合，以颗粒状摇匀，使碳酸钙为60〜90重量份，热塑性树脂为5〜15重量份，热塑性树脂为1〜5重量份 相对于100重量份的可生物降解的聚合物化合物，润滑剂的重量。

公开(公告)号：US08743612B2

公开(公告)日：2014-06-03

申请号：US13605942

申请日：2012-09-06

申请人： Eun Seok Choi ,  Jung Ryul Ahn ,  Se Hoon Kim ,  Yong Dae Park ,  In Geun Lim ,  Jung Seok Oh

发明人： Eun Seok Choi ,  Jung Ryul Ahn ,  Se Hoon Kim ,  Yong Dae Park ,  In Geun Lim ,  Jung Seok Oh

IPC分类号： G11C16/04

CPC分类号： G11C16/0483 ,  H01L27/11565 ,  H01L27/11582

摘要： A three-dimensional (3-D) non-volatile memory device according to embodiment of the present invention includes a plurality of bit lines, at least one string row extending in a first direction coupled to the bit lines and including 2N strings, wherein the N includes a natural number, a common source selection line configured to control source selection transistors of the 2N strings included in a memory block, a first common drain selection line configured to control drain selection transistors of a first string and a 2N-th string among the 2N strings included in a memory block, and N−1 second common drain selection lines configured to control drain selection transistors of adjacent strings in the first direction among remaining strings other than the first string and the 2N-th string.

摘要翻译： 根据本发明的实施例的三维（3-D）非易失性存储器件包括多个位线，至少一个串行沿第一方向延伸，耦合到位线并包括2N个字符串，其中， N包括自然数，被配置为控制包括在存储块中的2N串的源选择晶体管的公共源选择线，被配置为控制第一串的漏极选择晶体管和第2N串的第2N串的第一公共漏极选择线 包括在存储块中的2N个串，以及N-1个第二公共漏极选择线，被配置为控制除第一串和第2N个串之外的剩余串之中的第一方向上的相邻串的漏极选择晶体管。

公开(公告)号：US09349597B2

公开(公告)日：2016-05-24

申请号：US13613653

申请日：2012-09-13

申请人： Yong Dae Park ,  Ga Hee Lee

发明人： Yong Dae Park ,  Ga Hee Lee

IPC分类号： H01L29/792 ,  H01L21/265 ,  H01L27/115

CPC分类号： H01L21/26586 ,  H01L27/11582 ,  H01L29/7926

摘要： A semiconductor memory device includes conductive films and insulating layers alternately stacked on a substrate, substantially vertical channel layers penetrating the conductive films and the insulating layers, multilayer films including a charge storage film interposed between the conductive films and the substantially vertical channel layers, and a first anti-diffusion film formed on etched surfaces of the conductive films.

摘要翻译： 半导体存储器件包括交替层叠在基板上的导电膜和绝缘层，穿透导电膜和绝缘层的大致垂直的沟道层，包括介于导电膜和基本垂直沟道层之间的电荷存储膜的多层膜，以及 形成在导电膜的蚀刻表面上的第一抗扩散膜。

公开(公告)号：US08537632B2

公开(公告)日：2013-09-17

申请号：US13095156

申请日：2011-04-27

申请人： Hea Jong Yang ,  Hee Youl Lee ,  Sung Jae Chung ,  Hyun Heo ,  Jeong Hyong Yi ,  Yong Dae Park

发明人： Hea Jong Yang ,  Hee Youl Lee ,  Sung Jae Chung ,  Hyun Heo ,  Jeong Hyong Yi ,  Yong Dae Park

IPC分类号： G11C7/00

CPC分类号： G11C16/0483 ,  G11C16/16 ,  G11C16/32

摘要： A method of erasing a semiconductor memory device comprises grouping a plurality of word lines of each memory block into at least two groups based on intensity of disturbance between neighboring word lines; performing an erase operation by applying a ground voltage to all word lines of a selected memory block and by applying an erase voltage to a well of the selected memory block; and first increasing the ground voltage of one group of the groups to a positive voltage during the erase operation.

摘要翻译： 擦除半导体存储器件的方法包括：基于相邻字线之间的干扰强度将每个存储器块的多个字线分组成至少两组; 通过对所选择的存储块的所有字线施加接地电压并通过向所选存储块的阱施加擦除电压来执行擦除操作; 并且在擦除操作期间首先将一组组的接地电压增加到正电压。

公开(公告)号：US20110261623A1

公开(公告)日：2011-10-27

申请号：US13095156

申请日：2011-04-27

申请人： Hea Jong YANG ,  Hee Youl Lee ,  Sung Jae Chung ,  Hyun Heo ,  Jeong Hyong Yi ,  Yong Dae Park

发明人： Hea Jong YANG ,  Hee Youl Lee ,  Sung Jae Chung ,  Hyun Heo ,  Jeong Hyong Yi ,  Yong Dae Park

IPC分类号： G11C16/04

CPC分类号： G11C16/0483 ,  G11C16/16 ,  G11C16/32

摘要： A method of erasing a semiconductor memory device comprises grouping a plurality of word lines of each memory block into at least two groups based on intensity of disturbance between neighboring word lines; performing an erase operation by applying a ground voltage to all word lines of a selected memory block and by applying an erase voltage to a well of the selected memory block; and first increasing the ground voltage of one group of the groups to a positive voltage during the erase operation.

摘要翻译： 擦除半导体存储器件的方法包括：基于相邻字线之间的干扰强度将每个存储器块的多个字线分组成至少两组; 通过对所选择的存储块的所有字线施加接地电压并通过向所选存储块的阱施加擦除电压来执行擦除操作; 并且在擦除操作期间首先将一组组的接地电压增加到正电压。