摘要:
Provided are a semiconductor memory device and a memory system including the same, which may calibrate a level of an output voltage in consideration of channel environment and a mismatch in on-die termination (ODT) resistance of a memory controller. The memory system includes a memory controller and a semiconductor memory device. The semiconductor memory device is configured to generate a reference voltage based on driving information of the memory controller, and calibrate an output voltage level based on a reference voltage when the semiconductor memory device is electrically connected to the memory controller.
摘要:
A delay locked loop circuit is provided that can reduce bang-bang jitter in the circuit. In one embodiment, the delay locked loop circuit includes a phase detector, a first detection unit, a second detection unit, a delay unit, and a variable delay circuit. In the delay locked loop circuit, the variable delay circuit may be disabled or temporarily deactivated when two or more similar control signals are received to reduce bang-bang jitter in the circuit.
摘要:
A serializer including a pull-up unit configured to pull up an output node, and a plurality of data select units configured to receive a plurality of input data signals. Each data select unit includes a pull-up device configured to pull up the output node in response to a corresponding input data signal, and a pull-down device configured to pull down the output node in response to the corresponding input data signal.