摘要:
Provided are a semiconductor memory device and a memory system including the same, which may calibrate a level of an output voltage in consideration of channel environment and a mismatch in on-die termination (ODT) resistance of a memory controller. The memory system includes a memory controller and a semiconductor memory device. The semiconductor memory device is configured to generate a reference voltage based on driving information of the memory controller, and calibrate an output voltage level based on a reference voltage when the semiconductor memory device is electrically connected to the memory controller.
摘要:
An on-die termination (ODT) circuit of a memory device comprising: a memory device having a memory core having a memory cell array; a data input/output pin connected to the memory core through a data buffer; and an on-die termination (ODT) circuit, comprising: a termination circuit configured to provide a termination impedance at the input/output data pin, the termination circuit having a switching device that selectively connects a termination impedance to the input/output data pin based on the presence of an asynchronous control signal (ACS), wherein the ACS is generated based on the presence of a memory WRITE command. The memory device may further comprise a training circuit comprising: an asynchronous signal delay configured to delay the signal path of the ACS signal to the termination circuit; and a comparing unit configured to compare a phase difference between the ACS signal and a reference signal, the comparing unit comprising a phase detector and a replica delay, wherein the replica delay is configured to delay the signal path of the ACS signal to the phase detector, and the phase detector is configured to output the phase difference as training result.
摘要:
A semi-dual reference voltage data receiving apparatus includes a first input buffer, a second input buffer, and a phase detector wherein the first input buffer includes a first input receiving unit, a first sense amplifier, and a first current offset controlling unit. The first sense amplifier senses and amplifies the voltage difference between the voltage of a first terminal of a first input transistor and the voltage of a first terminal of a second input transistor. The first current offset controlling unit controls the offset of the current that flows through the second terminal of the second input transistor.
摘要:
A serializer including a pull-up unit configured to pull up an output node, and a plurality of data select units configured to receive a plurality of input data signals. Each data select unit includes a pull-up device configured to pull up the output node in response to a corresponding input data signal, and a pull-down device configured to pull down the output node in response to the corresponding input data signal.
摘要:
A dual reference input receiver, and a method of receiving, wherein the input receiver includes a first input buffer which is synchronized with and enabled by a clock signal, senses a difference between the input data signal and a first reference voltage, and amplifies the sensing result; a second input buffer which is synchronized with and enabled by the clock signal, senses a difference between a second reference voltage and the input data signal, and amplifies the sensing result; and a phase detector which detects a difference between a phase of output signals of the first and second input buffers, and outputs a signal corresponding to the detection result. The first and second reference voltages may respectively be higher and lower than a median voltage of the input data signal. Thus, a single input data signal is advantageously used and a wide input data eye is provided.
摘要:
Provided are nanoparticles prepared by the aggregation of cucurbituril derivatives and having a particle size of 1 to 1,000 nm, a pharmaceutical composition in which a pharmaceutically active substance is loaded into the nanoparticles, and preparation methods thereof.
摘要:
A clock divider in a DLL circuit for generating an internal clock signal synchronized with an external clock signal includes; a first clock dividing circuit for generating a first signal clock by dividing an input clock signal having a same period as a period of the external clock signal, a second clock dividing circuit for generating both a second clock signal and a third clock signal by dividing the first clock signal, a selection signal generation circuit for generating a selection signal in response to plurality of control signals, and a clock signal selection circuit for selectively outputting the second clock signal or the third clock signal in response to the selection signal.
摘要:
A X-ray mask structure which reduces the distortion of the membrane, the X-ray mask structure including, a mask substrate having an opening in the central part thereof, a membrane formed on the mask substrate, the membrane having the chip site on which absorbers are arranged according to a desired pattern of a semiconductor device, and a support ring for supporting the mask substrate, which is defined by a plurality of fragments.
摘要:
A power mixing circuit capable of maintaining a stable output voltage in a deep-power-down mode is provided. The power mixing circuit includes an input buffer, a power mixing control circuit, a power mixing driver and an output buffer. The input buffer is configured to operate using a first supply voltage, and to generate a first voltage signal in response to an input signal. The power mixing control circuit is configured to generate a power mixing control signal based on a power-up signal and a deep-power-down mode signal. The power mixing driver is configured to operate using an external supply voltage and a second supply voltage, to perform power mixing on the external supply voltage and the second supply voltage, and to generate a second voltage signal. The output buffer is configured to operate using the second supply voltage, and to generate an output signal.
摘要:
Provided are a semiconductor memory device and a memory system including the same, which may calibrate a level of an output voltage in consideration of channel environment and a mismatch in on-die termination (ODT) resistance of a memory controller. The memory system includes a memory controller and a semiconductor memory device. The semiconductor memory device is configured to generate a reference voltage based on driving information of the memory controller, and calibrate an output voltage level based on a reference voltage when the semiconductor memory device is electrically connected to the memory controller.