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    Method of fabricating phase change RAM including a fullerene layer
    1.
    发明授权
    Method of fabricating phase change RAM including a fullerene layer 有权
    制造包含富勒烯层的相变RAM的方法

    公开(公告)号：US07572662B2

    公开(公告)日：2009-08-11

    申请号：US11604824

    申请日：2006-11-28

    申请人： Yoon-ho Khang ,  Sang-Mock Lee ,  Jin-seo Noh ,  Woong-Chul Shin

    发明人： Yoon-ho Khang ,  Sang-Mock Lee ,  Jin-seo Noh ,  Woong-Chul Shin

    IPC分类号： H01L21/00 ,  H01L21/06 ,  H01L21/4763 ,  H01L21/44

    CPC分类号： G11C13/025 ,  B82Y10/00 ,  G11C11/5678 ,  G11C13/0004 ,  G11C2213/35 ,  G11C2213/79 ,  H01L27/2436 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/144 ,  H01L45/1675 ,  Y10S977/734

    摘要： A method of fabricating a phase change RAM (PRAM) having a fullerene layer is provided. The method of fabricating the PRAM may include forming a bottom electrode, forming an interlayer dielectric film covering the bottom electrode, and forming a bottom electrode contact hole exposing a portion of the bottom electrode in the interlayer dielectric film, forming a bottom electrode contact plug by filling the bottom electrode contact hole with a plug material, forming a fullerene layer on a region including at least an upper surface of the bottom electrode contact plug and sequentially stacking a phase change layer and an upper electrode on the fullerene layer. The method may further include forming a switching device on a substrate and a bottom electrode connected to the switching device, forming an interlayer dielectric film covering the bottom electrode and forming a bottom electrode contact hole exposing a portion of the bottom electrode in the interlayer dielectric film.

    摘要翻译： 提供了制造具有富勒烯层的相变RAM（PRAM）的方法。 制造PRAM的方法可以包括形成底部电极，形成覆盖底部电极的层间电介质膜，以及形成暴露层间电介质膜中底部电极的一部分的底部电极接触孔，形成底部电极接触插塞 用塞子材料填充底部电极接触孔，在包括底部电极接触塞的至少上表面的区域上形成富勒烯层，并且在富勒烯层上依次层叠相变层和上部电极。 该方法还可以包括在基板上形成开关器件和连接到开关器件的底部电极，形成覆盖底部电极的层间电介质膜，并形成露出层间绝缘膜中底部电极的一部分的底部电极接触孔 。

    Method of fabricating phase change RAM including a fullerene layer
    2.
    发明申请
    Method of fabricating phase change RAM including a fullerene layer 有权
    制造包含富勒烯层的相变RAM的方法

    公开(公告)号：US20070152754A1

    公开(公告)日：2007-07-05

    申请号：US11604824

    申请日：2006-11-28

    申请人： Yoon-ho Khang ,  Sang-Mock Lee ,  Jin-seo Noh ,  Woong-Chul Shin

    发明人： Yoon-ho Khang ,  Sang-Mock Lee ,  Jin-seo Noh ,  Woong-Chul Shin

    IPC分类号： H03G3/10

    CPC分类号： G11C13/025 ,  B82Y10/00 ,  G11C11/5678 ,  G11C13/0004 ,  G11C2213/35 ,  G11C2213/79 ,  H01L27/2436 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/144 ,  H01L45/1675 ,  Y10S977/734

    摘要： A method of fabricating a phase change RAM (PRAM) having a fullerene layer is provided. The method of fabricating the PRAM may include forming a bottom electrode, forming an interlayer dielectric film covering the bottom electrode, and forming a bottom electrode contact hole exposing a portion of the bottom electrode in the interlayer dielectric film, forming a bottom electrode contact plug by filling the bottom electrode contact hole with a plug material, forming a fullerene layer on a region including at least an upper surface of the bottom electrode contact plug and sequentially stacking a phase change layer and an upper electrode on the fullerene layer. The method may further include forming a switching device on a substrate and a bottom electrode connected to the switching device, forming an interlayer dielectric film covering the bottom electrode and forming a bottom electrode contact hole exposing a portion of the bottom electrode in the interlayer dielectric film.

    摘要翻译： 提供了制造具有富勒烯层的相变RAM（PRAM）的方法。 制造PRAM的方法可以包括形成底部电极，形成覆盖底部电极的层间电介质膜，以及形成暴露层间电介质膜中底部电极的一部分的底部电极接触孔，形成底部电极接触插塞 用塞子材料填充底部电极接触孔，在包括底部电极接触塞的至少上表面的区域上形成富勒烯层，并且在富勒烯层上依次层叠相变层和上部电极。 该方法还可以包括在基板上形成开关器件和连接到开关器件的底部电极，形成覆盖底部电极的层间电介质膜，并形成露出层间绝缘膜中底部电极的一部分的底部电极接触孔 。

    Method of operating and structure of phase change random access memory (PRAM)
    5.
    发明申请
    Method of operating and structure of phase change random access memory (PRAM) 有权
    相变随机存取存储器（PRAM）的操作和结构方法

    公开(公告)号：US20060152186A1

    公开(公告)日：2006-07-13

    申请号：US11329171

    申请日：2006-01-11

    申请人： Dong-seok Suh ,  Yoon-ho Khang ,  Sang-mock Lee ,  Jin-seo Noh

    发明人： Dong-seok Suh ,  Yoon-ho Khang ,  Sang-mock Lee ,  Jin-seo Noh

    IPC分类号： G05B19/29

    CPC分类号： G11C13/0004 ,  G11C11/5678 ,  G11C13/0069 ,  G11C2013/0078 ,  G11C2213/79

    摘要： Provided is a method of operating a phase change random access memory comprising a switching device and a storage node comprising a phase change layer. The method includes applying a reset current passing through the phase change layer from a lower portion of the phase change layer toward an upper portion of the phase change layer and being smaller than 1.6 mA to the storage node to change a portion of the phase change layer into an amorphous state. The set voltage is in an opposite direction is exemplary embodiments, and a connector is of small cross-sectional area.

    摘要翻译： 提供了一种操作包括切换装置和包括相变层的存储节点的相变随机存取存储器的方法。 该方法包括从相变层的下部向相变层的上部施加通过相变层的复位电流，并向存储节点施加小于1.6mA的改变相变层的一部分的复位电流 变成无定形状态。 设定电压是示例性实施例的相反方向，并且连接器具有小的横截面积。

    Method of operating and structure of phase change random access memory (PRAM)
    7.
    发明授权
    Method of operating and structure of phase change random access memory (PRAM) 有权
    相变随机存取存储器（PRAM）的操作和结构方法

    公开(公告)号：US07824953B2

    公开(公告)日：2010-11-02

    申请号：US11329171

    申请日：2006-01-11

    申请人： Dong-seok Suh ,  Yoon-ho Khang ,  Sang-mock Lee ,  Jin-seo Noh

    发明人： Dong-seok Suh ,  Yoon-ho Khang ,  Sang-mock Lee ,  Jin-seo Noh

    IPC分类号： H01L29/02

    CPC分类号： G11C13/0004 ,  G11C11/5678 ,  G11C13/0069 ,  G11C2013/0078 ,  G11C2213/79

    摘要： Provided is a method of operating a phase change random access memory comprising a switching device and a storage node comprising a phase change layer. The method includes applying a reset current passing through the phase change layer from a lower portion of the phase change layer toward an upper portion of the phase change layer and being smaller than 1.6 mA to the storage node to change a portion of the phase change layer into an amorphous state. The set voltage is in an opposite direction is exemplary embodiments, and a connector is of small cross-sectional area.

    摘要翻译： 提供了一种操作包括切换装置和包括相变层的存储节点的相变随机存取存储器的方法。 该方法包括从相变层的下部向相变层的上部施加通过相变层的复位电流，并向存储节点施加小于1.6mA的改变相变层的一部分的复位电流 变成无定形状态。 设定电压是示例性实施例的相反方向，并且连接器具有小的横截面积。

    Phase change material, phase change random access memory including the same, and methods of manufacturing and operating the same
    9.
    发明申请
    Phase change material, phase change random access memory including the same, and methods of manufacturing and operating the same 有权
    相变材料，包括相变的相变随机存取存储器及其制造和操作的方法

    公开(公告)号：US20070029606A1

    公开(公告)日：2007-02-08

    申请号：US11498796

    申请日：2006-08-04

    申请人： Jin-seo Noh ,  Yoon-ho Khang ,  Sang-mock Lee ,  Dong-seok Suh

    发明人： Jin-seo Noh ,  Yoon-ho Khang ,  Sang-mock Lee ,  Dong-seok Suh

    IPC分类号： H01L29/788

    CPC分类号： H01L45/1286 ,  G11C13/0004 ,  H01L27/2436 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/144

    摘要： A phase change material, a PRAM including the same, and methods of manufacturing and operating the same are provided. Insulating impurities may be uniformly distributed over an entire or partial region of the phase change material. The PRAM may include a phase change layer including the phase change material. The insulating impurity content of the phase change material may be 0.1 to 10% (inclusive) the volume of the phase change material. The insulating impurity content of the phase change material may be adjusted by controlling the power applied to a target including the insulating impurities.

    摘要翻译： 提供了相变材料，包括其的PRAM及其制造和操作方法。 绝缘杂质可以均匀分布在相变材料的整个或部分区域上。 PRAM可以包括包括相变材料的相变层。 相变材料的绝缘杂质含量可以为相变材料体积的0.1〜10％（含）。 可以通过控制施加到包括绝缘杂质的靶的功率来调节相变材料的绝缘杂质含量。