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    SOLID-STATE IMAGE PICKUP DEVICE, METHOD OF DRIVING SOLID-STATE IMAGE PICKUP DEVICE, AND ELECTRONIC INSTRUMENT
    2.
    发明申请
    SOLID-STATE IMAGE PICKUP DEVICE, METHOD OF DRIVING SOLID-STATE IMAGE PICKUP DEVICE, AND ELECTRONIC INSTRUMENT 有权
    固态图像拾取装置，驱动固态图像拾取装置的方法和电子仪器

    公开(公告)号：US20120153125A1

    公开(公告)日：2012-06-21

    申请号：US13312430

    申请日：2011-12-06

    申请人： Yusuke Oike ,  Yorito Sakano ,  Keiji Mabuchi

    发明人： Yusuke Oike ,  Yorito Sakano ,  Keiji Mabuchi

    IPC分类号： H01L27/146

    CPC分类号： H04N5/3535 ,  H01L27/14612 ,  H01L27/14656 ,  H04N5/353 ,  H04N5/3532 ,  H04N5/3698 ,  H04N5/37452

    摘要： A CMOS image sensor has an image array as a matrix of unit pixels each including at least a photodiode, a memory for holding a charge stored in the photodiode, a floating diffusion region for converting the charge in the memory into a voltage, a first transfer gate for transferring the charge from the photodiode to the memory, a second transfer gate for transferring the charge from the memory to the floating diffusion region, and a resetting transistor for resetting the charge in the floating diffusion region. The unit pixels are driven to set the potential of a potential barrier at a boundary between the memory and the floating diffusion region to a potential such that a charge overflowing the memory is transferred to the floating diffusion region, when the first transfer gate is turned on. The CMOS image sensor operates in a global shutter mode for capturing moving images.

    摘要翻译： CMOS图像传感器具有作为单位像素的矩阵的图像阵列，每个单元像素至少包括光电二极管，用于保持存储在光电二极管中的电荷的存储器，用于将存储器中的电荷转换为电压的浮动扩散区域，第一转移 用于将电荷从光电二极管转移到存储器的栅极，用于将电荷从存储器传送到浮动扩散区域的第二传输栅极，以及用于复位浮置扩散区域中的电荷的复位晶体管。 驱动单位像素以将存储器和浮动扩散区域之间的边界处的势垒的电势设置为电位，使得当第一传输门被导通时，溢出存储器的电荷被传送到浮动扩散区域 。 CMOS图像传感器以全局快门模式运行，用于捕获运动图像。

    Solid-state image pickup device in which charges overflowing a memory during a charge transfer period are directed to a floating diffusion and method of driving same
    6.
    发明授权
    Solid-state image pickup device in which charges overflowing a memory during a charge transfer period are directed to a floating diffusion and method of driving same 有权
    其中在电荷转移期间溢出存储器的电荷指向浮动扩散的固态图像拾取装置及其驱动方法

    公开(公告)号：US09054009B2

    公开(公告)日：2015-06-09

    申请号：US13312430

    申请日：2011-12-06

    申请人： Yusuke Oike ,  Yorito Sakano ,  Keiji Mabuchi

    发明人： Yusuke Oike ,  Yorito Sakano ,  Keiji Mabuchi

    IPC分类号： H01L27/00 ,  H01L27/146 ,  H04N5/353 ,  H04N5/3745

    CPC分类号： H04N5/3535 ,  H01L27/14612 ,  H01L27/14656 ,  H04N5/353 ,  H04N5/3532 ,  H04N5/3698 ,  H04N5/37452

    摘要： A CMOS image sensor has an image array as a matrix of unit pixels each including at least a photodiode, a memory for holding a charge stored in the photodiode, a floating diffusion region for converting the charge in the memory into a voltage, a first transfer gate for transferring the charge from the photodiode to the memory, a second transfer gate for transferring the charge from the memory to the floating diffusion region, and a resetting transistor for resetting the charge in the floating diffusion region. The unit pixels are driven to set the potential of a potential barrier at a boundary between the memory and the floating diffusion region to a potential such that a charge overflowing the memory is transferred to the floating diffusion region, when the first transfer gate is turned on. The CMOS image sensor operates in a global shutter mode for capturing moving images.

    摘要翻译： CMOS图像传感器具有作为单位像素的矩阵的图像阵列，每个单元像素至少包括光电二极管，用于保持存储在光电二极管中的电荷的存储器，用于将存储器中的电荷转换为电压的浮动扩散区域，第一转移 用于将电荷从光电二极管转移到存储器的栅极，用于将电荷从存储器传送到浮动扩散区域的第二传输栅极，以及用于复位浮置扩散区域中的电荷的复位晶体管。 驱动单位像素以将存储器和浮动扩散区域之间的边界处的势垒的电势设置为电位，使得当第一传输门被导通时，溢出存储器的电荷被传送到浮动扩散区域 。 CMOS图像传感器以全局快门模式运行，用于捕获运动图像。

    Solid-state imaging device, method of manufacturing same, and electronic apparatus
    7.
    发明授权
    Solid-state imaging device, method of manufacturing same, and electronic apparatus 有权
    固态成像装置及其制造方法以及电子装置

    公开(公告)号：US08754452B2

    公开(公告)日：2014-06-17

    申请号：US12943449

    申请日：2010-11-10

    申请人： Yorito Sakano ,  Keiji Mabuchi

    发明人： Yorito Sakano ,  Keiji Mabuchi

    IPC分类号： H01L27/148

    CPC分类号： H01L27/14689 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/1464

    摘要： A solid-state imaging device includes a plurality of photoelectric conversion units configured to receive light and generate signal charge, the plurality of photoelectric conversion units being provided in such a manner as to correspond to a plurality of pixels in a pixel area of a semiconductor substrate; and pixel transistors configured to output the signal charge generated by the photoelectric conversion units as electrical signals. Each of the pixel transistors includes at least a transfer transistor that transfers the signal charge generated in the photoelectric conversion unit to a floating diffusion corresponding to a drain. A gate electrode of the transfer transistor is formed in such a manner as to extend with a gate insulating film in between from a channel formed area to a portion where the photoelectric conversion unit has been formed on the surface of the semiconductor substrate.

    摘要翻译： 固态成像装置包括多个光电转换单元，被配置为接收光并产生信号电荷，所述多个光电转换单元以与半导体基板的像素区域中的多个像素对应的方式设置 ; 以及被配置为将由光电转换单元生成的信号电荷作为电信号输出的像素晶体管。 每个像素晶体管至少包括传输晶体管，其将在光电转换单元中产生的信号电荷传送到对应于漏极的浮动扩散。 转移晶体管的栅电极以从沟道形成区域到在半导体衬底的表面上形成光电转换单元的部分之间的栅极绝缘膜延伸的方式形成。

    SOLID-STATE IMAGE PICKUP APPARATUS, DRIVING METHOD FOR SOLID-STATE IMAGE PICKUP APPARATUS AND ELECTRONIC DEVICE
    9.
    发明申请
    SOLID-STATE IMAGE PICKUP APPARATUS, DRIVING METHOD FOR SOLID-STATE IMAGE PICKUP APPARATUS AND ELECTRONIC DEVICE 有权
    固态图像拾取装置，用于固态图像拾取装置和电子装置的驱动方法

    公开(公告)号：US20110211103A1

    公开(公告)日：2011-09-01

    申请号：US13027351

    申请日：2011-02-15

    申请人： Yorito Sakano ,  Keiji Mabuchi

    发明人： Yorito Sakano ,  Keiji Mabuchi

    IPC分类号： H04N5/335 ,  H01L27/146

    CPC分类号： H04N5/3559 ,  H04N5/37452

    摘要： A solid-state imaging device with a photodiode, a first charge accumulation region electronically connected to the photodiode, a second charge accumulation region electronically connected to the photodiode, where a charge generated in the photodiode is distributed into the first charge accumulation region and the second charge accumulation region based on an amount of charge.

    摘要翻译： 一种具有光电二极管的固态成像装置，与光电二极管电连接的第一电荷累积区，电连接到光电二极管的第二电荷累积区，其中在光电二极管中产生的电荷分布到第一电荷累积区， 电荷累积区域基于电荷量。

    SOLID-STATE IMAGING DEVICE, METHOD OF MANUFACTURING SAME, AND ELECTRONIC APPARATUS
    10.
    发明申请
    SOLID-STATE IMAGING DEVICE, METHOD OF MANUFACTURING SAME, AND ELECTRONIC APPARATUS 有权
    固态成像装置，制造方法和电子装置

    公开(公告)号：US20110121371A1

    公开(公告)日：2011-05-26

    申请号：US12943449

    申请日：2010-11-10

    申请人： Yorito Sakano ,  Keiji Mabuchi

    发明人： Yorito Sakano ,  Keiji Mabuchi

    IPC分类号： H01L31/14 ,  H01L31/18

    CPC分类号： H01L27/14689 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/1464

    摘要： A solid-state imaging device includes a plurality of photoelectric conversion units configured to receive light and generate signal charge, the plurality of photoelectric conversion units being provided in such a manner as to correspond to a plurality of pixels in a pixel area of a semiconductor substrate; and pixel transistors configured to output the signal charge generated by the photoelectric conversion units as electrical signals. Each of the pixel transistors includes at least a transfer transistor that transfers the signal charge generated in the photoelectric conversion unit to a floating diffusion corresponding to a drain. A gate electrode of the transfer transistor is formed in such a manner as to extend with a gate insulating film in between from a channel formed area to a portion where the photoelectric conversion unit has been formed on the surface of the semiconductor substrate.

    摘要翻译： 固态成像装置包括多个光电转换单元，被配置为接收光并产生信号电荷，所述多个光电转换单元以与半导体基板的像素区域中的多个像素对应的方式设置 ; 以及被配置为将由光电转换单元生成的信号电荷作为电信号输出的像素晶体管。 每个像素晶体管至少包括传输晶体管，其将在光电转换单元中产生的信号电荷传送到对应于漏极的浮动扩散。 转移晶体管的栅电极以从沟道形成区域到在半导体衬底的表面上形成光电转换单元的部分之间的栅极绝缘膜延伸的方式形成。