公开(公告)号：US08872953B2

公开(公告)日：2014-10-28

申请号：US12910068

申请日：2010-10-22

申请人： Yorito Sakano ,  Takashi Abe ,  Keiji Mabuchi ,  Ryoji Suzuki ,  Hiroyuki Mori ,  Yoshiharu Kudoh ,  Fumihiko Koga ,  Takeshi Yanagita ,  Kazunobu Ota

发明人： Yorito Sakano ,  Takashi Abe ,  Keiji Mabuchi ,  Ryoji Suzuki ,  Hiroyuki Mori ,  Yoshiharu Kudoh ,  Fumihiko Koga ,  Takeshi Yanagita ,  Kazunobu Ota

IPC分类号： H04N3/14 ,  H04N5/335 ,  H01L27/146 ,  H04N5/3745

CPC分类号： H04N5/361 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/14614 ,  H01L27/14623 ,  H01L27/14636 ,  H01L27/14641 ,  H01L27/14643 ,  H01L27/14689 ,  H04N5/2176 ,  H04N5/374 ,  H04N5/37457 ,  H04N5/378

摘要： A solid-state imaging device is provided, which includes a photodiode having a first conductivity type semiconductor area that is dividedly formed for each pixel; a first conductivity type transfer gate electrode formed on the semiconductor substrate via a gate insulating layer in an area neighboring the photodiode, and transmitting signal charges generated and accumulated in the photodiode; a signal reading unit reading a voltage which corresponds to the signal charge or the signal charge; and an inversion layer induction electrode formed on the semiconductor substrate via the gate insulating layer in an area covering a portion or the whole of the photodiode, and composed of a conductor or a semiconductor having a work function. An inversion layer is induced, which is formed by accumulating a second conductivity type carrier on a surface of the inversion layer induction electrode side of the semiconductor area through the inversion layer induction electrode.

摘要翻译： 提供了一种固态成像装置，其包括：光电二极管，其具有为每个像素分割形成的第一导电类型半导体区域; 在与所述光电二极管相邻的区域经由栅极绝缘层在所述半导体衬底上形成的第一导电型转移栅电极，以及发射并累积在所述光电二极管中的信号电荷; 读取对应于信号电荷或信号电荷的电压的信号读取单元; 以及反射层感应电极，其在覆盖所述光电二极管的一部分或全部的区域中，经由所述栅极绝缘层在所述半导体衬底上形成，并且由具有功函数的导体或半导体构成。 通过反转层感应电极在半导体区域的反型层感应电极侧的表面上积累第二导电型载体而形成反转层。

公开(公告)号：US20110102620A1

公开(公告)日：2011-05-05

申请号：US12910068

申请日：2010-10-22

申请人： Yorito Sakano ,  Takashi Abe ,  Keiji Mabuchi ,  Ryoji Suzuki ,  Hiroyuki Mori ,  Yoshiharu Kudoh ,  Fumihiko Koga ,  Takeshi Yanagita ,  Kazunobu Ota

发明人： Yorito Sakano ,  Takashi Abe ,  Keiji Mabuchi ,  Ryoji Suzuki ,  Hiroyuki Mori ,  Yoshiharu Kudoh ,  Fumihiko Koga ,  Takeshi Yanagita ,  Kazunobu Ota

IPC分类号： H04N5/228 ,  H01L31/06 ,  H01L31/18 ,  H03F3/08 ,  H01L27/146

CPC分类号： H04N5/361 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/14614 ,  H01L27/14623 ,  H01L27/14636 ,  H01L27/14641 ,  H01L27/14643 ,  H01L27/14689 ,  H04N5/2176 ,  H04N5/374 ,  H04N5/37457 ,  H04N5/378

摘要： A solid-state imaging device is provided, which includes a photodiode having a first conductivity type semiconductor area that is dividedly formed for each pixel; a first conductivity type transfer gate electrode formed on the semiconductor substrate via a gate insulating layer in an area neighboring the photodiode, and transmitting signal charges generated and accumulated in the photodiode; a signal reading unit reading a voltage which corresponds to the signal charge or the signal charge; and an inversion layer induction electrode formed on the semiconductor substrate via the gate insulating layer in an area covering a portion or the whole of the photodiode, and composed of a conductor or a semiconductor having a work function. An inversion layer is induced, which is formed by accumulating a second conductivity type carrier on a surface of the inversion layer induction electrode side of the semiconductor area through the inversion layer induction electrode.

摘要翻译： 提供了一种固态成像装置，其包括：光电二极管，其具有为每个像素分割形成的第一导电类型半导体区域; 在与所述光电二极管相邻的区域经由栅极绝缘层在所述半导体衬底上形成的第一导电型转移栅电极，以及发射并累积在所述光电二极管中的信号电荷; 读取对应于信号电荷或信号电荷的电压的信号读取单元; 以及反射层感应电极，其在覆盖所述光电二极管的一部分或全部的区域中，经由所述栅极绝缘层在所述半导体衬底上形成，并且由具有功函数的导体或半导体构成。 通过反转层感应电极在半导体区域的反型层感应电极侧的表面上积累第二导电型载体而形成反转层。

公开(公告)号：US07940328B2

公开(公告)日：2011-05-10

申请号：US11788925

申请日：2007-04-23

申请人： Takashi Abe ,  Ryoji Suzuki ,  Yoshiharu Kudoh

发明人： Takashi Abe ,  Ryoji Suzuki ,  Yoshiharu Kudoh

IPC分类号： H04N5/225

CPC分类号： H01L27/14603 ,  H01L27/14636

摘要： A solid-state imaging device is provided. The solid-state imaging device includes an imaging area that includes arrayed pixels having photoelectric converting units and transistor elements; and a peripheral circuit, in which a wiring line in the imaging area that is shifted based on pupil correction amount and a wiring line in the peripheral circuit that is not shifted are connected through a connection expanded portion integrally formed with one or both of the wiring lines.

摘要翻译： 提供固态成像装置。 固态成像装置包括具有光电转换单元和晶体管元件的排列像素的成像区域; 以及外围电路，其中基于瞳孔校正量移位的成像区域中的布线和外围电路中未移位的布线通过与一个或两个布线一体形成的连接扩展部分连接 线条。

公开(公告)号：US08866941B2

公开(公告)日：2014-10-21

申请号：US13104604

申请日：2011-05-10

申请人： Takashi Abe ,  Ryoji Suzuki ,  Yoshiharu Kudoh

发明人： Takashi Abe ,  Ryoji Suzuki ,  Yoshiharu Kudoh

IPC分类号： H04N9/64 ,  H01L27/146

CPC分类号： H01L27/14603 ,  H01L27/14636

摘要： A solid-state imaging device is provided. The solid-state imaging device includes an imaging area that includes arrayed pixels having photoelectric converting units and transistor elements; and a peripheral circuit, in which a wiring line in the imaging area that is shifted based on pupil correction amount and a wiring line in the peripheral circuit that is not shifted are connected through a connection expanded portion integrally formed with one or both of the wiring lines.

摘要翻译： 提供固态成像装置。 固态成像装置包括具有光电转换单元和晶体管元件的排列像素的成像区域; 以及外围电路，其中基于瞳孔校正量移位的成像区域中的布线和外围电路中未移位的布线通过与一个或两个布线一体形成的连接扩展部分连接 线条。

公开(公告)号：US20070273779A1

公开(公告)日：2007-11-29

申请号：US11788925

申请日：2007-04-23

申请人： Takashi Abe ,  Ryoji Suzuki ,  Yoshiharu Kudoh

发明人： Takashi Abe ,  Ryoji Suzuki ,  Yoshiharu Kudoh

IPC分类号： H04N5/335

CPC分类号： H01L27/14603 ,  H01L27/14636

摘要： A solid-state imaging device is provided. The solid-state imaging device includes an imaging area that includes arrayed pixels having photoelectric converting units and transistor elements; and a peripheral circuit, in which a wiring line in the imaging area that is shifted based on pupil correction amount and a wiring line in the peripheral circuit that is not shifted are connected through a connection expanded portion integrally formed with one or both of the wiring lines.

摘要翻译： 提供固态成像装置。 固态成像装置包括具有光电转换单元和晶体管元件的排列像素的成像区域; 以及外围电路，其中基于瞳孔校正量移位的成像区域中的布线和外围电路中未移位的布线通过与一个或两个布线一体形成的连接扩展部分连接 线条。

公开(公告)号：US20110285901A1

公开(公告)日：2011-11-24

申请号：US13104604

申请日：2011-05-10

申请人： Takashi Abe ,  Ryoji Suzuki ,  Yoshiharu Kudoh

发明人： Takashi Abe ,  Ryoji Suzuki ,  Yoshiharu Kudoh

IPC分类号： H04N5/225 ,  H01L31/18 ,  H01L27/146

CPC分类号： H01L27/14603 ,  H01L27/14636

摘要： A solid-state imaging device is provided. The solid-state imaging device includes an imaging area that includes arrayed pixels having photoelectric converting units and transistor elements; and a peripheral circuit, in which a wiring line in the imaging area that is shifted based on pupil correction amount and a wiring line in the peripheral circuit that is not shifted are connected through a connection expanded portion integrally formed with one or both of the wiring lines.

摘要翻译： 提供固态成像装置。 固态成像装置包括具有光电转换单元和晶体管元件的排列像素的成像区域; 以及外围电路，其中基于瞳孔校正量移位的成像区域中的布线和外围电路中未移位的布线通过与一个或两个布线一体形成的连接扩展部分连接 线条。

公开(公告)号：US07816711B2

公开(公告)日：2010-10-19

申请号：US11824088

申请日：2007-06-29

申请人： Takashi Abe ,  Ryoji Suzuki ,  Keiji Mabuchi ,  Testuya Iizuka ,  Takahisa Ueno ,  Tsutomu Haruta

发明人： Takashi Abe ,  Ryoji Suzuki ,  Keiji Mabuchi ,  Testuya Iizuka ,  Takahisa Ueno ,  Tsutomu Haruta

IPC分类号： H01L31/062

CPC分类号： H01L27/14603 ,  H01L27/14609 ,  H01L27/14643

摘要： A solid-state imaging device having an arrangement in which well contact is achieved for each pixel is provided. In the solid-state imaging device, a well contact part is formed in an activation region of a photoelectric conversion portion. The well contact part fixes a well in which the photoelectric conversion portion and transistors of the pixel are provided at a predetermined potential.

公开(公告)号：US20080067565A1

公开(公告)日：2008-03-20

申请号：US11981002

申请日：2007-10-30

申请人： Takashi Abe ,  Ryoji Suzuki ,  Keiji Mabuchi ,  Testuya Iizuka ,  Takahisa Ueno ,  Tsutomu Haruta

发明人： Takashi Abe ,  Ryoji Suzuki ,  Keiji Mabuchi ,  Testuya Iizuka ,  Takahisa Ueno ,  Tsutomu Haruta

IPC分类号： H01L27/146

CPC分类号： H01L27/14603 ,  H01L27/14609 ,  H01L27/14643

摘要： A solid-state imaging device having an arrangement in which well contact is achieved for each pixel is provided. In the solid-state imaging device, a well contact part is formed in an activation region of a photoelectric conversion portion. The well contact part fixes a well in which the photoelectric conversion portion and transistors of the pixel are provided at a predetermined potential.

公开(公告)号：US20050116251A1

公开(公告)日：2005-06-02

申请号：US10979707

申请日：2004-11-02

申请人： Takashi Abe ,  Ryoji Suzuki ,  Keiji Mabuchi ,  Testuya Iizuka ,  Takahisa Ueno ,  Tsutomu Haruta

发明人： Takashi Abe ,  Ryoji Suzuki ,  Keiji Mabuchi ,  Testuya Iizuka ,  Takahisa Ueno ,  Tsutomu Haruta

IPC分类号： H01L27/14 ,  H01L27/146 ,  H01L31/10 ,  H04N5/335 ,  H04N5/361 ,  H04N5/369 ,  H04N5/374 ,  H01L29/45

CPC分类号： H01L27/14603 ,  H01L27/14609 ,  H01L27/14643

摘要： A solid-state imaging device having an arrangement in which well contact is achieved for each pixel is provided. In the solid-state imaging device, a well contact part is formed in an activation region of a photoelectric conversion portion. The well contact part fixes a well in which the photoelectric conversion portion and transistors of the pixel are provided at a predetermined potential.

摘要翻译： 提供了一种固态成像装置，其具有为每个像素实现良好接触的布置。 在固态成像装置中，在光电转换部的激活区域形成阱接触部。 阱接触部分固定在其中以预定电位设置像素的光电转换部分和晶体管的阱。

公开(公告)号：US20080210947A1

公开(公告)日：2008-09-04

申请号：US11824088

申请日：2007-06-29

申请人： Takashi Abe ,  Ryoji Suzuki ,  Keiji Mabuchi ,  Testuya Iizuka ,  Takahisa Ueno ,  Tsutomu Haruta

发明人： Takashi Abe ,  Ryoji Suzuki ,  Keiji Mabuchi ,  Testuya Iizuka ,  Takahisa Ueno ,  Tsutomu Haruta

IPC分类号： H01L27/14

CPC分类号： H01L27/14603 ,  H01L27/14609 ,  H01L27/14643

摘要： A solid-state imaging device having an arrangement in which well contact is achieved for each pixel is provided. In the solid-state imaging device, a well contact part is formed in an activation region of a photoelectric conversion portion. The well contact part fixes a well in which the photoelectric conversion portion and transistors of the pixel are provided at a predetermined potential.

摘要翻译： 提供了一种固态成像装置，其具有为每个像素实现良好接触的布置。 在固态成像装置中，在光电转换部的激活区域形成阱接触部。 阱接触部分固定在其中以预定电位设置像素的光电转换部分和晶体管的阱。