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    Solid-state imaging device
    1.
    发明授权
    Solid-state imaging device 有权
    固态成像装置

    公开(公告)号：US08598640B2

    公开(公告)日：2013-12-03

    申请号：US13211362

    申请日：2011-08-17

    申请人： Yoshiaki Kitano ,  Hideshi Abe ,  Jun Kuroiwa ,  Kiyoshi Hirata ,  Hiroaki Ohki ,  Nobuhiro Karasawa ,  Ritsuo Takizawa ,  Mitsuru Yamashita ,  Mitsuru Sato ,  Katsunori Kokubun

    发明人： Yoshiaki Kitano ,  Hideshi Abe ,  Jun Kuroiwa ,  Kiyoshi Hirata ,  Hiroaki Ohki ,  Nobuhiro Karasawa ,  Ritsuo Takizawa ,  Mitsuru Yamashita ,  Mitsuru Sato ,  Katsunori Kokubun

    IPC分类号： H01L31/113 ,  H01L27/146

    CPC分类号： H01L27/14601 ,  H01L27/14689 ,  H01L27/14806 ,  H04N5/335

    摘要： A solid-state imaging device with a structure such that an electrode for reading a signal charge is provided on one side of a light-receiving sensor portion constituting a pixel; a predetermined voltage signal V is applied to a light-shielding film formed to cover an image pickup area except the light-receiving sensor portion; a second-conductivity-type semiconductor area is formed in the center on the surface of a first-conductivity-type semiconductor area constituting a photo-electric conversion area of the light-receiving sensor portion; and areas containing a lower impurity concentration than that of the second-conductivity-type semiconductor area is formed on the surface of the first-conductivity-type semiconductor area at the end on the side of the electrode and at the opposite end on the side of a pixel-separation area.

    摘要翻译： 具有这样一种结构的固态成像装置，该结构使得用于读取信号电荷的电极设置在构成像素的光接收传感器部分的一侧; 将预定的电压信号V施加到形成为覆盖除了光接收传感器部分之外的图像拾取区域的遮光膜; 第二导电型半导体区域形成在构成光接收传感器部分的光电转换区域的第一导电型半导体区域的表面上的中心; 并且在第一导电型半导体区域的电极侧的端部的表面上形成比第二导电型半导体区域的杂质浓度低的区域， 像素分离区域。

    Solid-state imaging device
    3.
    发明授权
    Solid-state imaging device 有权
    固态成像装置

    公开(公告)号：US08017984B2

    公开(公告)日：2011-09-13

    申请号：US12323006

    申请日：2008-11-25

    申请人： Yoshiaki Kitano ,  Hideshi Abe ,  Jun Kuroiwa ,  Kiyoshi Hirata ,  Hiroaki Ohki ,  Nobuhiro Karasawa ,  Ritsuo Takizawa ,  Mitsuru Yamashita ,  Mitsuru Sato ,  Katsunori Kokubun

    发明人： Yoshiaki Kitano ,  Hideshi Abe ,  Jun Kuroiwa ,  Kiyoshi Hirata ,  Hiroaki Ohki ,  Nobuhiro Karasawa ,  Ritsuo Takizawa ,  Mitsuru Yamashita ,  Mitsuru Sato ,  Katsunori Kokubun

    IPC分类号： H01L31/113 ,  H01L27/146

    CPC分类号： H01L27/14601 ,  H01L27/14689 ,  H01L27/14806 ,  H04N5/335

    摘要： A solid-state imaging device with a structure such that an electrode for reading a signal charge is provided on one side of a light-receiving sensor portion constituting a pixel; a predetermined voltage signal V is applied to a light-shielding film formed to cover an image pickup area except the light-receiving sensor portion; a second-conductivity-type semiconductor area is formed in the center on the surface of a first-conductivity-type semiconductor area constituting a photo-electric conversion area of the light-receiving sensor portion; and areas containing a lower impurity concentration than that of the second-conductivity-type semiconductor area is formed on the surface of the first-conductivity-type semiconductor area at the end on the side of the electrode and at the opposite end on the side of a pixel-separation area.

    摘要翻译： 具有这样一种结构的固态成像装置，该结构使得用于读取信号电荷的电极设置在构成像素的光接收传感器部分的一侧; 将预定的电压信号V施加到形成为覆盖除了光接收传感器部分之外的图像拾取区域的遮光膜; 第二导电型半导体区域形成在构成光接收传感器部分的光电转换区域的第一导电型半导体区域的表面上的中心; 并且在第一导电型半导体区域的电极侧的端部的表面上形成比第二导电型半导体区域的杂质浓度低的区域， 像素分离区域。

    Method of driving solid state image sensing device
    9.
    发明授权
    Method of driving solid state image sensing device 有权
    驱动固态摄像装置的方法

    公开(公告)号：US07473977B2

    公开(公告)日：2009-01-06

    申请号：US10548182

    申请日：2004-03-05

    申请人： Yoshiaki Kitano ,  Hideshi Abe ,  Jun Kuroiwa ,  Kiyoshi Hirata ,  Hiroaki Ohki ,  Nobuhiro Karasawa ,  Ritsuo Takizawa ,  Mitsuru Yamashita ,  Mitsuru Sato ,  Katsunori Kokubun

    发明人： Yoshiaki Kitano ,  Hideshi Abe ,  Jun Kuroiwa ,  Kiyoshi Hirata ,  Hiroaki Ohki ,  Nobuhiro Karasawa ,  Ritsuo Takizawa ,  Mitsuru Yamashita ,  Mitsuru Sato ,  Katsunori Kokubun

    IPC分类号： H01L31/06

    CPC分类号： H01L27/14601 ,  H01L27/14689 ,  H01L27/14806 ,  H04N5/335

    摘要： A solid-state imaging device that has a satisfactory noise characteristic and readout characteristic is provided by improving the noise characteristic and readout characteristic in a well balanced way.The solid-state imaging device has such a structure that an electrode 8 for reading a signal charge is provided on one side of a light-receiving sensor portion 11 constituting a pixel; a predetermined voltage signal V is applied to a light-shielding film 9 formed to cover an image pickup area except the light-receiving sensor portion 11; a second-conductivity-type semiconductor area 6 is formed in the center on the surface of a first-conductivity-type semiconductor area 2 constituting a photo-electric conversion area of the light-receiving sensor portion 11; and areas 10 (10A, 10B) containing a lower impurity concentration than that of the second-conductivity-type semiconductor area 6 is formed on the surface of the first-conductivity-type semiconductor area 2 at the end on the side of the electrode 8 and at the opposite end on the side of a pixel-separation area 3.

    摘要翻译： 通过以良好平衡的方式改善噪声特性和读出特性，提供具有令人满意的噪声特性和读出特性的固态成像装置。 固态成像装置具有这样的结构，即在构成像素的光接收传感器部分11的一侧设置用于读取信号电荷的电极8; 将预定电压信号V施加到形成为覆盖除了光接收传感器部分11之外的图像拾取区域的遮光膜9; 第二导电型半导体区域6形成在构成光接收传感器部11的光电转换区域的第一导电型半导体区域2的表面上的中心; 并且在第一导电型半导体区域2的电极8侧的端部的表面上形成包含比第二导电型半导体区域6的杂质浓度低的区域10（10A，10B） 并且在像素分离区域3侧的相对端。

    Solid state image sensing device and production method therefor, and method of driving solid state image sensing device
    10.
    发明申请
    Solid state image sensing device and production method therefor, and method of driving solid state image sensing device 有权
    固态摄像装置及其制作方法以及固态摄像装置的驱动方法

    公开(公告)号：US20060170009A1

    公开(公告)日：2006-08-03

    申请号：US10548182

    申请日：2004-03-05

    申请人： Yoshiaki Kitano ,  Hideshi Abe ,  Jun Kuroiwa ,  Kiyoshi Hirata ,  Hiroaki Ohki ,  Nobuhiro Karasawa ,  Ritsuo Takizawa ,  Mitsuru Yamashita ,  Mitsuru Sato ,  Katsunori Kokubun

    发明人： Yoshiaki Kitano ,  Hideshi Abe ,  Jun Kuroiwa ,  Kiyoshi Hirata ,  Hiroaki Ohki ,  Nobuhiro Karasawa ,  Ritsuo Takizawa ,  Mitsuru Yamashita ,  Mitsuru Sato ,  Katsunori Kokubun

    IPC分类号： H01L29/768

    CPC分类号： H01L27/14601 ,  H01L27/14689 ,  H01L27/14806 ,  H04N5/335

    摘要： A solid-state imaging device that has a satisfactory noise characteristic and readout characteristic is provided by improving the noise characteristic and readout characteristic in a well balanced way. The solid-state imaging device has such a structure that an electrode 8 for reading a signal charge is provided on one side of a light-receiving sensor portion 11 constituting a pixel; a predetermined voltage signal V is applied to a light-shielding film 9 formed to cover an image pickup area except the light-receiving sensor portion 11; a second-conductivity-type semiconductor area 6 is formed in the center on the surface of a first-conductivity-type semiconductor area 2 constituting a photo-electric conversion area of the light-receiving sensor portion 11; and areas 10 (10A, 10B) containing a lower impurity concentration than that of the second-conductivity-type semiconductor area 6 is formed on the surface of the first-conductivity-type semiconductor area 2 at the end on the side of the electrode 8 and at the opposite end on the side of a pixel-separation area 3.

    摘要翻译： 通过以良好平衡的方式改善噪声特性和读出特性，提供具有令人满意的噪声特性和读出特性的固态成像装置。 固态成像装置具有这样的结构，即在构成像素的光接收传感器部分11的一侧设置用于读取信号电荷的电极8; 将预定电压信号V施加到形成为覆盖除了光接收传感器部分11之外的图像拾取区域的遮光膜9; 第二导电型半导体区域6形成在构成光接收传感器部11的光电转换区域的第一导电型半导体区域2的表面上的中心; 并且在第一导电型半导体区域2的表面上形成包含比第二导电型半导体区域6低的杂质浓度的区域10（10A，10B） 电极8并且位于像素分离区域3侧的相对端。