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    Semiconductor memory device and semiconductor memory system
    1.
    发明授权
    Semiconductor memory device and semiconductor memory system 有权
    半导体存储器件和半导体存储器系统

    公开(公告)号：US07835169B2

    公开(公告)日：2010-11-16

    申请号：US12368622

    申请日：2009-02-10

    申请人： Yasuo Murakuki ,  Yasushi Gohou ,  Shunichi Iwanari ,  Masanori Matsuura ,  Yoshiaki Nakao

    发明人： Yasuo Murakuki ,  Yasushi Gohou ,  Shunichi Iwanari ,  Masanori Matsuura ,  Yoshiaki Nakao

    IPC分类号： G11C11/22

    CPC分类号： G11C11/22

    摘要： A semiconductor memory device includes a plurality of memory cell arrays each including a plurality of memory cells arranged in a matrix pattern, and a plurality of cell plate lines each being shared by the memory cell arrays, each of the cell plate lines corresponding to each of rows of the memory cells and each of the cell plate lines being connected to the memory cells of a corresponding one of the rows. Each of the memory cell arrays includes a plurality of word lines each of which corresponds to each of the rows of the memory cells in the memory cell array. The number of the memory cells connected to each of the cell plate lines is larger than the number of the memory cells connected to one of the word lines corresponding to the each of the cell plate lines.

    摘要翻译： 半导体存储器件包括多个存储单元阵列，每个存储单元阵列包括以矩阵图案排列的多个存储单元，以及多个存储单元阵列共享的单元板板线，每个单元板线对应于 存储单元的行和每个单元格板线连接到相应行之一的存储单元。 每个存储单元阵列包括多个字线，每个字线对应于存储单元阵列中存​​储单元的行中的每一行。 连接到每个单元格板行的存储单元的数量大于连接到与每个单元格板行相对应的一个字线的存储单元的数量。

    ECC CIRCUIT, SEMICONDUCTOR MEMORY DEVICE, MEMORY SYSTEM
    2.
    发明申请
    ECC CIRCUIT, SEMICONDUCTOR MEMORY DEVICE, MEMORY SYSTEM 审中-公开
    ECC电路，半导体存储器件，存储器系统

    公开(公告)号：US20100023840A1

    公开(公告)日：2010-01-28

    申请号：US12480294

    申请日：2009-06-08

    申请人： Yoshiaki Nakao ,  Yasushi Gohou ,  Shunichi Iwanari ,  Masanori Matsuura ,  Yasuo Murakuki

    发明人： Yoshiaki Nakao ,  Yasushi Gohou ,  Shunichi Iwanari ,  Masanori Matsuura ,  Yasuo Murakuki

    IPC分类号： H03M13/05 ,  G06F11/10

    CPC分类号： H03M13/13 ,  G06F11/1008 ,  H03M13/19

    摘要： A syndrome generation section generates a syndrome from input data having d bits of data bits and k bits of parity bits. A syndrome table stores a syndrome pattern indicating that no error has occurred in the input data and syndrome patterns indicating an error position. A comparison section compares the syndrome generated by the syndrome generation section with the syndrome patterns in the syndrome table, outputs a match signal when a syndrome pattern matching the syndrome exists, and outputs a no-match signal when no syndrome pattern matching the syndrome exists. An error correction section corrects the error in the input data based on the match signal from the comparison section.

    摘要翻译： 校正子产生部分从具有数据位d位和奇偶校验位k位的输入数据生成校正子。 校正子表存储指示在输入数据中没有发生错误的校正子模式和指示错误位置的校正子模式。 比较部分将由校正子产生部分产生的综合征与综合征表中的综合征模式进行比较，当不存在匹配该综合征的综合征模式时，输出匹配信号，并且当不存在与该综合征相匹配的症状模式时，输出不匹配信号。 误差校正部分根据比较部分的匹配信号校正输入数据中的误差。

    Semiconductor memory device
    5.
    发明授权
    Semiconductor memory device 有权
    半导体存储器件

    公开(公告)号：US07280406B2

    公开(公告)日：2007-10-09

    申请号：US11344199

    申请日：2006-02-01

    申请人： Shunichi Iwanari ,  Masahiko Sakagami ,  Hiroshige Hirano ,  Tetsuji Nakakuma ,  Takashi Miki ,  Yasushi Gohou ,  Kunisato Yamaoka ,  Yasuo Murakuki

    发明人： Shunichi Iwanari ,  Masahiko Sakagami ,  Hiroshige Hirano ,  Tetsuji Nakakuma ,  Takashi Miki ,  Yasushi Gohou ,  Kunisato Yamaoka ,  Yasuo Murakuki

    IPC分类号： G11C16/06

    CPC分类号： G11C11/4076 ,  G11C7/1051 ,  G11C7/1063 ,  G11C2207/229

    摘要： Provided is a semiconductor memory device compatible with a SRAM and capable of a high-speed data transfer operation while maintaining data reliability. An access to a memory core 6 starts when an external chip enable signal XCE performs a falling transition. Simultaneously, an external write enable signal XWE and an external address signal ADD are received, and a memory cell 1, in the memory core 6, corresponding to the received external address signal ADD is selected. When a data read-out from the memory cell 1 or a data write-in to the memory cell 1 is complete, a rewrite timer 7 is activated in accordance with a rising transition of an external chip enable signal XCE or a rising transition of the external write enable signal XWE for performing a data rewrite for the memory cell 1.

    摘要翻译： 提供了与SRAM兼容的半导体存储器件，并且能够在保持数据可靠性的同时进行高速数据传输操作。 当外部芯片使能信号XCE执行下降转换时，对存储器核心6的访问开始。 同时，接收外部写入使能信号XWE和外部地址信号ADD，并且选择与存储器核心6中对应于所接收的外部地址信号ADD的存储单元1。 当从存储器单元1读出的数据或对存储器单元1的数据写入完成时，根据外部芯片使能信号XCE的上升转变或者上升沿的转换激活重写定时器7 用于对存储单元1执行数据重写的外部写使能信号XWE。

    Semiconductor storage device
    6.
    发明申请
    Semiconductor storage device 有权
    半导体存储设备

    公开(公告)号：US20050265090A1

    公开(公告)日：2005-12-01

    申请号：US11121939

    申请日：2005-05-05

    申请人： Yasuo Murakuki ,  Hiroshige Hirano ,  Yasushi Gohou ,  Masahiko Sakagami ,  Kunisato Yamaoka ,  Shunichi Iwanari ,  Tetsuji Nakakuma ,  Takashi Miki

    发明人： Yasuo Murakuki ,  Hiroshige Hirano ,  Yasushi Gohou ,  Masahiko Sakagami ,  Kunisato Yamaoka ,  Shunichi Iwanari ,  Tetsuji Nakakuma ,  Takashi Miki

    IPC分类号： G11C11/22 ,  G11C7/00 ,  G11C29/00 ,  G11C29/12

    CPC分类号： G11C29/816 ,  G11C11/22 ,  G11C29/789 ,  G11C2029/4402

    摘要： To provide a semiconductor storage device which can adapt to assembly processes involving different treatment temperatures, can become unrewritable when rewriting of data by the user is prohibited, negates the necessity for developing different semiconductor storage devices, and lowers development cost. A semiconductor storage device is provided with, as areas for storing faulty address information indicating a faulty area and operation mode setting information about the semiconductor storage device, a first setting function storage area 103 formed from electrically-rewritable nonvolatile memory and a second setting function storage area 102 formed from once-rewritable nonvolatile memory. Transfer of faulty address information to a faulty address register 111 and transfer of operation mode setting information to an operation mode register 110 are selectively performed.

    摘要翻译： 为了提供可以适应涉及不同处理温度的装配过程的半导体存储装置，当用户重写数据被禁止时，可以变得不可改变，否定了开发不同的半导体存储装置的必要性，并且降低了开发成本。 半导体存储装置设置有用于存储指示故障区域的有缺陷的地址信息和关于半导体存储装置的操作模式设置信息的区域，由可重写非易失性存储器和第二设置功能存储器形成的第一设置功能存储区域103 区域102由一次性可重写的非易失性存储器形成。 选择性地执行将故障地址信息传送到故障地址寄存器111和将操作模式设置信息传送到操作模式寄存器110。

    Semiconductor memory device
    7.
    再颁专利
    Semiconductor memory device 有权
    半导体存储器件

    公开(公告)号：USRE41879E1

    公开(公告)日：2010-10-26

    申请号：US12155392

    申请日：2008-06-03

    申请人： Shunichi Iwanari ,  Masahiko Sakagami ,  Hiroshige Hirano ,  Tetsuji Nakakuma ,  Takashi Miki ,  Yasushi Gohou ,  Kunisato Yamaoka ,  Yasuo Murakuki

    发明人： Shunichi Iwanari ,  Masahiko Sakagami ,  Hiroshige Hirano ,  Tetsuji Nakakuma ,  Takashi Miki ,  Yasushi Gohou ,  Kunisato Yamaoka ,  Yasuo Murakuki

    IPC分类号： G11C16/06

    CPC分类号： G11C11/4076 ,  G11C7/1051 ,  G11C7/1063 ,  G11C2207/229

    摘要： Provided is a semiconductor memory device compatible with a SRAM and capable of a high-speed data transfer operation while maintaining data reliability. An access to a memory core 6 starts when an external chip enable signal XCE performs a falling transition. Simultaneously, an external write enable signal XWE and an external address signal ADD are received, and a memory cell 1, in the memory core 6, corresponding to the received external address signal ADD is selected. When a data read-out from the memory cell 1 or a data write-in to the memory cell 1 is complete, a rewrite timer 7 is activated in accordance with a rising transition of an external chip enable signal XCE or a rising transition of the external write enable signal XWE for performing a data rewrite for the memory cell 1.

    摘要翻译： 提供了与SRAM兼容的半导体存储器件，并且能够在保持数据可靠性的同时进行高速数据传输操作。 当外部芯片使能信号XCE执行下降转换时，对存储器核心6的访问开始。 同时，接收外部写入使能信号XWE和外部地址信号ADD，并且选择与存储器核心6中对应于所接收的外部地址信号ADD的存储单元1。 当从存储器单元1读出的数据或对存储器单元1的数据写入完成时，根据外部芯片使能信号XCE的上升转变或者上升沿的转换激活重写定时器7 用于对存储单元1执行数据重写的外部写使能信号XWE。

    Semiconductor storage device
    8.
    发明授权
    Semiconductor storage device 有权
    半导体存储设备

    公开(公告)号：US07136313B2

    公开(公告)日：2006-11-14

    申请号：US11121939

    申请日：2005-05-05

    申请人： Yasuo Murakuki ,  Hiroshige Hirano ,  Yasushi Gohou ,  Masahiko Sakagami ,  Kunisato Yamaoka ,  Shunichi Iwanari ,  Tetsuji Nakakuma ,  Takashi Miki

    发明人： Yasuo Murakuki ,  Hiroshige Hirano ,  Yasushi Gohou ,  Masahiko Sakagami ,  Kunisato Yamaoka ,  Shunichi Iwanari ,  Tetsuji Nakakuma ,  Takashi Miki

    IPC分类号： G11C7/00 ,  G11C8/00

    CPC分类号： G11C29/816 ,  G11C11/22 ,  G11C29/789 ,  G11C2029/4402

    摘要： To provide a semiconductor storage device which can adapt to assembly processes involving different treatment temperatures, can become unrewritable when rewriting of data by the user is prohibited, negates the necessity for developing different semiconductor storage devices, and lowers development cost.A semiconductor storage device is provided with, as areas for storing faulty address information indicating a faulty area and operation mode setting information about the semiconductor storage device, a first setting function storage area 103 formed from electrically-rewritable nonvolatile memory and a second setting function storage area 102 formed from once-rewritable nonvolatile memory. Transfer of faulty address information to a faulty address register 111 and transfer of operation mode setting information to an operation mode register 110 are selectively performed.

    摘要翻译： 为了提供可以适应涉及不同处理温度的装配过程的半导体存储装置，当用户重写数据被禁止时，可以变得不可改变，否定了开发不同的半导体存储装置的必要性，并且降低了开发成本。 半导体存储装置设置有用于存储指示故障区域的有缺陷的地址信息和关于半导体存储装置的操作模式设置信息的区域，由可重写非易失性存储器和第二设置功能存储器形成的第一设置功能存储区域103 区域102由一次性可重写的非易失性存储器形成。 选择性地执行将故障地址信息传送到故障地址寄存器111和将操作模式设置信息传送到操作模式寄存器110。

    Semiconductor memory device
    9.
    发明申请
    Semiconductor memory device 有权
    半导体存储器件

    公开(公告)号：US20060171246A1

    公开(公告)日：2006-08-03

    申请号：US11344199

    申请日：2006-02-01

    申请人： Shunichi Iwanari ,  Masahiko Sakagami ,  Hiroshige Hirano ,  Tetsuji Nakakuma ,  Takashi Miki ,  Yasushi Gohou ,  Kunisato Yamaoka ,  Yasuo Murakuki

    发明人： Shunichi Iwanari ,  Masahiko Sakagami ,  Hiroshige Hirano ,  Tetsuji Nakakuma ,  Takashi Miki ,  Yasushi Gohou ,  Kunisato Yamaoka ,  Yasuo Murakuki

    IPC分类号： G11C8/00

    CPC分类号： G11C11/4076 ,  G11C7/1051 ,  G11C7/1063 ,  G11C2207/229

    摘要： Provided is a semiconductor memory device compatible with a SRAM and capable of a high-speed data transfer operation while maintaining data reliability. An access to a memory core 6 starts when an external chip enable signal XCE performs a falling transition. Simultaneously, an external write enable signal XWE and an external address signal ADD are received, and a memory cell 1, in the memory core 6, corresponding to the received external address signal ADD is selected. When a data read-out from the memory cell 1 or a data write-in to the memory cell 1 is complete, a rewrite timer 7 is activated in accordance with a rising transition of an external chip enable signal XCE or a rising transition of the external write enable signal XWE for performing a data rewrite for the memory cell 1.

    摘要翻译： 提供了与SRAM兼容的半导体存储器件，并且能够在保持数据可靠性的同时进行高速数据传输操作。 当外部芯片使能信号XCE执行下降转换时，对存储器核心6的访问开始。 同时，接收外部写入使能信号XWE和外部地址信号ADD，并且选择与存储器核心6中对应于所接收的外部地址信号ADD的存储单元1。 当从存储器单元1读出的数据或对存储器单元1的数据写入完成时，根据外部芯片使能信号XCE的上升转变或者上升沿的转换激活重写定时器7 用于对存储单元1执行数据重写的外部写使能信号XWE。