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1.发明授权Piezoelectric device, piezoelectric device manufacturing method, and liquid discharge apparatus 有权压电元件，压电元件的制造方法以及液体排出装置公开(公告)号：US08801150B2
公开(公告)日：2014-08-12
申请号：US13000408
申请日：2009-07-27
申请人： Yoshikazu Hishinuma , Takehiro Kasahara , Yasukazu Nihei , Takamichi Fujii , Yuuichi Okamoto , Takami Arakawa , Takayuki Naono
发明人： Yoshikazu Hishinuma , Takehiro Kasahara , Yasukazu Nihei , Takamichi Fujii , Yuuichi Okamoto , Takami Arakawa , Takayuki Naono
CPC分类号： B41J2/161 , B41J2/1646 , C04B35/49 , H01L41/0805 , H01L41/0973 , H01L41/1875 , H01L41/316 , Y10T29/42
摘要： A piezoelectric device, including the following on a substrate in the order listed below: a lower electrode, a piezoelectric film which contains a Pb containing perovskite oxide represented by a general expression (P) below, and an upper electrode, in which the piezoelectric film has a layer of pyrochlore oxide on the surface facing the lower electrode, and the average layer thickness of the pyrochlore oxide layer is not greater than 20 nm. AaBbO3 (P) where, A: at least one type of A-site element containing Pb as a major component, B: at least one type of B-site element selected from the group consisting of Ti, Zr, V, Nb, Ta, Cr, Mo, W, Mn, Sc, Co, Cu, In, Sn, Ga, Zn, Cd, Fe, and Ni, and O: an oxygen element.
摘要翻译： 一种压电装置，其以下列顺序包括在基板上：下电极，包含由下面的一般表达式（P）表示的含Pb的钙钛矿氧化物的压电膜和上电极，其中压电膜 在面向下电极的表面上具有一层烧绿石氧化物，烧绿石氧化物层的平均层厚不大于20nm。 AaBbO3（P）其中A：至少一种含有Pb作为主要成分的A位元素，B：选自Ti，Zr，V，Nb，Ta中的至少一种B位元素 ，Cr，Mo，W，Mn，Sc，Co，Cu，In，Sn，Ga，Zn，Cd，Fe和Ni，O：氧元素。
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2.发明申请PIEZOELECTRIC DEVICE, PIEZOELECTRIC DEVICE MANUFACTURING METHOD, AND LIQUID DISCHARGE APPARATUS 有权压电器件，压电器件制造方法和液体放电设备公开(公告)号：US20110121096A1
公开(公告)日：2011-05-26
申请号：US13000408
申请日：2009-07-27
CPC分类号： B41J2/161 , B41J2/1646 , C04B35/49 , H01L41/0805 , H01L41/0973 , H01L41/1875 , H01L41/316 , Y10T29/42
摘要： A piezoelectric device, including the following on a substrate in the order listed below: a lower electrode, a piezoelectric film which contains a Pb containing perovskite oxide represented by a general expression (P) below, and an upper electrode, in which the piezoelectric film has a layer of pyrochlore oxide on the surface facing the lower electrode, and the average layer thickness of the pyrochlore oxide layer is not greater than 20 nm. AaBbO3 (P) where, A: at least one type of A-site element containing Pb as a major component, B: at least one type of B-site element selected from the group consisting of Ti, Zr, V, Nb, Ta, Cr, Mo, W, Mn, Sc, Co, Cu, In, Sn, Ga, Zn, Cd, Fe, and Ni, and O: an oxygen element.
摘要翻译： 一种压电装置，其以下列顺序包括在基板上：下电极，包含由下面的一般表达式（P）表示的含Pb的钙钛矿氧化物的压电膜和上电极，其中压电膜 在面向下电极的表面上具有一层烧绿石氧化物，烧绿石氧化物层的平均层厚不大于20nm。 AaBbO3（P）其中A：至少一种含有Pb作为主要成分的A位元素，B：选自Ti，Zr，V，Nb，Ta中的至少一种B位元素 ，Cr，Mo，W，Mn，Sc，Co，Cu，In，Sn，Ga，Zn，Cd，Fe和Ni，O：氧元素。
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公开(公告)号：US20100039482A1
公开(公告)日：2010-02-18
申请号：US12538977
申请日：2009-08-11
IPC分类号： H01L41/047 , H01L41/22 , B41J2/045
CPC分类号： H01L41/0815 , B41J2/1612 , B41J2/1642 , B41J2/1646 , H01L41/0477 , Y10T29/42
摘要： A multilayer body which includes a low-resistance metal layer having a low electrical resistance, excellent thermal resistance and low surface irregularity is provided. The multilayer body includes a substrate, and a low-resistance metal layer which is formed on the substrate and has a single-layer structure or a multilayer structure of two or more sublayers. The low-resistance metal layer includes a gold-containing layer or sublayer composed of gold and another metal.
摘要翻译： 提供一种包括具有低电阻，优异的耐热性和低表面不规则性的低电阻金属层的多层体。 多层体包括基板和形成在基板上的具有单层结构或两层以上的亚层的多层结构的低电阻金属层。 低电阻金属层包括由金和另一种金属构成的含金层或子层。
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4.发明申请Piezoelectric Actuator, Method of Driving Same, Liquid Ejection Apparatus and Piezoelectric Ultrasonic Osicllator 有权压电致动器，驱动方法，液体喷射装置和压电超声波振荡器公开(公告)号：US20110074888A1
公开(公告)日：2011-03-31
申请号：US12892904
申请日：2010-09-28
CPC分类号： H01L41/042 , B41J2/04581 , B41J2/04588 , H01L41/0973 , H01L41/1876
摘要： A method of driving a piezoelectric actuator including: a piezoelectric element containing a piezoelectric body having coercive field points on a negative field side and a positive field side respectively and having asymmetrical bipolar polarization—electric field hysteresis characteristics in which an absolute value of a coercive electric field on the negative field side and a coercive electric field value on the positive field side are mutually different, and a pair of electrodes for applying voltage to the piezoelectric body; and a diaphragm which externally transmits, as displacement, distortion produced in the piezoelectric body when the voltage is applied to the piezoelectric body, includes the step of driving the piezoelectric actuator between a positive drive voltage and a negative drive voltage in a range not exceeding the coercive electric field, from among the positive and negative coercive electric fields, which has the larger absolute value.
摘要翻译： 一种驱动压电致动器的方法，包括：压电元件，其包含分别具有负场侧和正场侧的矫顽场的压电体，并具有不对称双极偏振电场滞后特性，其中矫顽电绝对值 并且在正场侧的矫顽电场值相互不同，以及一对用于向压电体施加电压的电极; 以及当施加电压施加到压电体时，在外部透射作为位移的压电体产生的变形的振动膜包括在不超过压电体的范围内驱动压电致动器的正驱动电压和负驱动电压之间的步骤 矫顽电场中，绝对值较大的正，负矫顽电场。
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公开(公告)号：US08449083B2
公开(公告)日：2013-05-28
申请号：US12538977
申请日：2009-08-11
IPC分类号： B41J2/045
CPC分类号： H01L41/0815 , B41J2/1612 , B41J2/1642 , B41J2/1646 , H01L41/0477 , Y10T29/42
摘要： A multilayer body which includes a low-resistance metal layer having a low electrical resistance, excellent thermal resistance and low surface irregularity is provided. The multilayer body includes a substrate, and a low-resistance metal layer which is formed on the substrate and has a single-layer structure or a multilayer structure of two or more sublayers. The low-resistance metal layer includes a gold-containing layer or sublayer composed of gold and another metal.
摘要翻译： 提供一种包括具有低电阻，优异的耐热性和低表面不规则性的低电阻金属层的多层体。 多层体包括基板和形成在基板上的具有单层结构或两层以上的亚层的多层结构的低电阻金属层。 低电阻金属层包括由金和另一种金属构成的含金层或子层。
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6.发明授权Piezoelectric actuator, method of driving same, liquid ejection apparatus and piezoelectric ultrasonic osicllator 有权压电致动器，驱动方法，液体喷射装置和压电超声波振荡器公开(公告)号：US08562112B2
公开(公告)日：2013-10-22
申请号：US12892904
申请日：2010-09-28
IPC分类号： B41J2/045
CPC分类号： H01L41/042 , B41J2/04581 , B41J2/04588 , H01L41/0973 , H01L41/1876
摘要： A method of driving a piezoelectric actuator including: a piezoelectric element containing a piezoelectric body having coercive field points on a negative field side and a positive field side respectively and having asymmetrical bipolar polarization—electric field hysteresis characteristics in which an absolute value of a coercive electric field on the negative field side and a coercive electric field value on the positive field side are mutually different, and a pair of electrodes for applying voltage to the piezoelectric body; and a diaphragm which externally transmits, as displacement, distortion produced in the piezoelectric body when the voltage is applied to the piezoelectric body, includes the step of driving the piezoelectric actuator between a positive drive voltage and a negative drive voltage in a range not exceeding the coercive electric field, from among the positive and negative coercive electric fields, which has the larger absolute value.
摘要翻译： 一种驱动压电致动器的方法，包括：压电元件，其包含分别具有负场侧和正场侧的矫顽场的压电体，并具有不对称双极偏振电场滞后特性，其中矫顽电绝对值 并且在正场侧的矫顽电场值相互不同，以及一对用于向压电体施加电压的电极; 以及当施加电压施加到压电体时，在外部透射作为位移的压电体产生的变形的振动膜包括在不超过压电体的范围内驱动压电致动器的正驱动电压和负驱动电压之间的步骤 矫顽电场中，绝对值较大的正，负矫顽电场。
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7.发明授权Perovskite-type oxide film, piezoelectric thin-film device and liquid ejecting device using perovskite-type oxide film, as well as production process and evaluation method for perovskite-type oxide film 有权钙钛矿型氧化膜，压电薄膜元件和使用钙钛矿型氧化物膜的液体喷射装置以及钙钛矿型氧化膜的制造方法及评价方法公开(公告)号：US08075105B2
公开(公告)日：2011-12-13
申请号：US12560131
申请日：2009-09-15
IPC分类号： B41J2/045 , C04B35/495 , C04B35/00 , H01L41/18 , H01L41/187
CPC分类号： B41J2/14233 , B41J2202/03 , C23C14/025 , C23C14/083 , C23C14/5806 , G01N21/65 , H01L41/1876 , H01L41/29 , H01L41/316
摘要： Provided is a perovskite-type oxide film having a perovskite-type crystal structure and containing lead as a chief component, which, when subjected to Raman microspectroscopy at a plurality of points on a surface thereof so as to measure Raman spectra upon application of an electric field of 100 kV/cm and upon application of no electric field, has a mean of absolute values of peak shift amounts that is 2.2 cm−1 or less, with the peak shift amounts being found between Raman spectra in a range of 500 to 650 cm−1 measured upon application of an electric field of 100 kV/cm and Raman spectra in the range of 500 to 650 cm−1 measured upon application of no electric field. A production process and an evaluation method for such a film as well as a device using such a film are also provided.
摘要翻译： 本发明提供一种具有钙钛矿型晶体结构并含有铅作为主要成分的钙钛矿型氧化物膜，其在表面上的多个点进行拉曼显微光谱检测，以便在施加电流时测量拉曼光谱 100kV / cm的电场，施加无电场时，具有2.2cm -1以下的峰值偏移量的绝对值的平均值，峰值偏移量在500〜650nm范围内的拉曼光谱之间发现 在施加100kV / cm的电场时测量的cm -1，并且在施加无电场时测量的在500至650cm -1范围内的拉曼光谱。 还提供了这种膜的制造方法和评价方法以及使用这种膜的装置。
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公开(公告)号：US08540851B2
公开(公告)日：2013-09-24
申请号：US12389253
申请日：2009-02-19
CPC分类号： C23C14/35 , C23C14/088 , C23C14/345 , H01J37/32651 , H01J37/3408 , H01J37/3444
摘要： A method of physical vapor deposition includes applying a radio frequency signal to a cathode in a physical vapor deposition apparatus, wherein the cathode includes a sputtering target, electrically connecting a chuck in the physical vapor deposition apparatus to an impedance matching network, wherein the chuck supports a substrate, and wherein the impedance matching network includes at least one capacitor, and depositing material from the sputtering target onto the substrate.
摘要翻译： 一种物理气相沉积方法包括在物理气相沉积设备中向阴极施加射频信号，其中阴极包括溅射靶，将物理气相沉积设备中的卡盘电连接到阻抗匹配网络，其中卡盘支撑 衬底，并且其中所述阻抗匹配网络包括至少一个电容器，以及将材料从所述溅射靶材沉积到所述衬底上。
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9.发明授权Piezoelectric film, method for forming piezoelectric film, piezoelectric device and liquid discharge device 有权压电薄膜，压电薄膜的形成方法，压电元件和液体排出装置公开(公告)号：US08641173B2
公开(公告)日：2014-02-04
申请号：US12656737
申请日：2010-02-16
CPC分类号： H01L41/316 , B41J2/14233 , B41J2/161 , B41J2/1642 , B41J2/1646 , H01L41/0805 , H01L41/0973 , H01L41/1876
摘要： A piezoelectric film of the present invention has a surface roughness value P-V of not more than 170.0 nm, which is defined by a difference between a maximum height (peak value P) and a minimum height (valley value V) on a film surface, a piezoelectric constant d31 greater than 150 pC/N and a breakdown voltage of 80 V or more, which is defined by an applied voltage that results in a current value of 1 μA or more.
摘要翻译： 本发明的压电膜的表面粗糙度值PV为170.0nm以下，由膜表面上的最大高度（峰值P）与最小高度（谷值V）之间的差定义， 压电常数d31大于150pC / N，击穿电压为80V或更高，其由施加的电压定义，导致电流值为1μA或更大。
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公开(公告)号：US08557088B2
公开(公告)日：2013-10-15
申请号：US12389241
申请日：2009-02-19
IPC分类号： C23C14/34
CPC分类号： C23C14/345 , H01J37/3408 , H01J37/3438 , H01J37/3444
摘要： A method of physical vapor deposition includes applying a first radio frequency signal having a first phase to a cathode in a physical vapor deposition apparatus, wherein the cathode includes a sputtering target, applying a second radio frequency signal having a second phase to a chuck in the physical vapor deposition apparatus, wherein the chuck supports a substrate, and wherein a difference between the first and second phases creates a positive self bias direct current voltage on the substrate, and depositing a material from the sputtering target onto the substrate.
摘要翻译： 一种物理气相沉积方法包括在物理气相沉积设备中向阴极施加具有第一相的第一射频信号，其中所述阴极包括溅射靶，将具有第二相的第二射频信号施加到卡盘中的第二相位 物理气相沉积设备，其中所述卡盘支撑衬底，并且其中所述第一和第二相之间的差产生在所述衬底上的正自偏压直流电压，以及将材料从所述溅射靶沉积到所述衬底上。
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