公开(公告)号：US5547751A

公开(公告)日：1996-08-20

申请号：US209258

申请日：1994-03-14

申请人： Yoshio Fujii ,  Takashi Tokunaga ,  Yoshiyuki Nakaki ,  Kazuhiko Tsutsumi ,  Kazuo Hashima ,  Tatsuya Fukami ,  Yuji Kawano

发明人： Yoshio Fujii ,  Takashi Tokunaga ,  Yoshiyuki Nakaki ,  Kazuhiko Tsutsumi ,  Kazuo Hashima ,  Tatsuya Fukami ,  Yuji Kawano

IPC分类号： G11B11/105 ,  G11B5/66

CPC分类号： G11B11/10586 ,  G11B11/10506 ,  Y10S428/90 ,  Y10T428/265

摘要： A magneto-optical recording medium wherein an initializing layer is covered with a resin layer for dissipating heat from the initializing layer thereby to prevent signal degradation at high recording power and thus excellent in-record/reproduce repetition times, and the initializing layer is compositionally modulated thereby to broaden allowable ranges for the recording/reproducing light intensity and for the external magnetic field, besides the composition of a first or a second magnetic layer is controlled thereby to enhance recording sensitivity, and the exchange-coupling force between the first and second magnetic layers or the magnetic field strengthe to reverse the magnetization of the first magnetic layer is controlled thereby to enhance the recording/reproducing characteristics.

摘要翻译： 一种磁光记录介质，其中用树脂层覆盖初始化层以从初始化层散热，从而防止在高记录功率下的信号劣化，从而优良的记录/再现重复次数，并且初始化层被组成调制 从而扩大了记录/再现光强度和外部磁场的允许范围，此外控制第一或第二磁性层的组成以提高记录灵敏度，并且第一和第二磁性之间的交换耦合力 层或磁场强化以反转第一磁性层的磁化，从而增强记录/再现特性。

公开(公告)号：US5764600A

公开(公告)日：1998-06-09

申请号：US464371

申请日：1995-06-05

申请人： Yoshio Fujii ,  Tatsuya Fukami ,  Takashi Tokunaga ,  Yoshiyuki Nakaki ,  Kazuhiko Tsutsumi

发明人： Yoshio Fujii ,  Tatsuya Fukami ,  Takashi Tokunaga ,  Yoshiyuki Nakaki ,  Kazuhiko Tsutsumi

IPC分类号： G11B11/10 ,  G11B11/105 ,  G11B5/66

CPC分类号： G11B11/10515 ,  G11B11/10506 ,  G11B11/10521 ,  G11B11/10584 ,  G11B11/10586 ,  Y10S428/90

摘要： A recording/reproduction method for recording or reproducing information using the magneto-optical recording medium, the magneto-optical recording medium comprising a first magnetic layer comprising a rare earth-transition metal alloy or a ferromagnetic material containing a magnetic transition metal, a second magnetic layer comprising a rare earth-transition metal alloy, a third magnetic layer comprising a rare earth-transition metal alloy, a fourth magnetic layer comprising a rare earth-transition metal alloy, a fifth magnetic layer comprising a rare earth-transition metal alloy, and a sixth magnetic layer comprising a rare earth-transition metal alloy, the second to sixth magnetic layers being stacked in this order on the first magnetic layer, adjacent layers of the second to sixth magnetic layers being coupled by an exchange force thereof.

摘要翻译： 一种用于使用磁光记录介质记录或再现信息的记录/再现方法，该磁光记录介质包括由稀土 - 过渡金属合金构成的第一磁性层或含有磁性过渡金属的铁磁材料，第二磁性层 包含稀土 - 过渡金属合金的层，包含稀土金属过渡金属合金的第三磁性层，包含稀土金属合金的第四磁性层，包含稀土 - 过渡金属合金的第五磁性层和 包括稀土 - 过渡金属合金的第六磁性层，所述第二至第六磁性层依次堆叠在所述第一磁性层上，所述第二至第六磁性层的相邻层通过其交换力耦合。

公开(公告)号：US5449566A

公开(公告)日：1995-09-12

申请号：US107157

申请日：1993-08-17

申请人： Yoshio Fujii ,  Tatsuya Fukami ,  Takashi Tokunaga ,  Yoshiyuki Nakaki ,  Kazuhiko Tsutsumi

发明人： Yoshio Fujii ,  Tatsuya Fukami ,  Takashi Tokunaga ,  Yoshiyuki Nakaki ,  Kazuhiko Tsutsumi

IPC分类号： G11B11/10 ,  G11B11/105 ,  G11B5/66

CPC分类号： G11B11/10515 ,  G11B11/10506 ,  G11B11/10521 ,  G11B11/10584 ,  G11B11/10586 ,  Y10S428/90

摘要： A magneto-optical recording medium allowing both direct overwriting by light power modulation and superresolutive reproduction, and a recording/reproduction method therefor are provided. The magneto-optical recording medium includes six magnetic layers of which adjacent layers are coupled by an exchange force thereof, the first magnetic layer being made of a rare earth-transition metal alloy or a ferromagnetic material containing a magnetic transition metal, the second to sixth magnetic layers being each composed of a rare earth-transition metal alloy. Each of the magnetic layers has a predetermined Curie temperature, and the respective transition metal sub-lattice magnetization directions of the first to third magnetic layers (including the magnetization direction of the first layer) are aligned in one direction at room temperature while at the same time those of the fourth to sixth magnetic layers are aligned in one direction at room temperature. In the recording/reproduction method there are applied external magnetic fields of the same direction for recording and for reproduction, respectively.

摘要翻译： 提供允许通过光功率调制和超分辨再现进行直接重写的磁光记录介质及其记录/再现方法。 磁光记录介质包括六个磁性层，其相邻层通过其交换力耦合，第一磁性层由稀土 - 过渡金属合金或含有磁性过渡金属的铁磁材料制成，第二至第六层 磁性层各自由稀土 - 过渡金属合金构成。 每个磁性层具有预定的居里温度，并且第一至第三磁性层（包括第一层的磁化方向）的各自的过渡金属亚晶格磁化方向在室温下沿一个方向排列，同时 第四至第六磁性层的时间在室温下沿一个方向排列。 在记录/再现方法中，分别应用相同方向的外部磁场用于记录和再现。

公开(公告)号：US5337305A

公开(公告)日：1994-08-09

申请号：US016030

申请日：1993-02-10

申请人： Kazuo Hashima ,  Yuji Kawano ,  Tatsuya Fukami ,  Kazuhiko Tsutsumi ,  Yoshiyuki Nakaki ,  Takashi Tokunaga ,  Yoshio Fujii

发明人： Kazuo Hashima ,  Yuji Kawano ,  Tatsuya Fukami ,  Kazuhiko Tsutsumi ,  Yoshiyuki Nakaki ,  Takashi Tokunaga ,  Yoshio Fujii

IPC分类号： G11B7/00 ,  G11B7/0045 ,  G11B7/006 ,  G11B7/125 ,  G11B7/30 ,  G11B11/10 ,  G11B11/105 ,  G11B7/085

CPC分类号： G11B7/126 ,  G11B11/10595 ,  G11B7/006 ,  G11B11/10517

摘要： An information storage system for recording and reproducing information by use of irradiating light on a medium capable of overwriting information is provided. The information storage system is capable of recording information even if the light intensity is varied so as to enhance reliability. The intensity of the light at the time of overwriting is modulated, the more intense light intensity being P.sub.H and the less intense light intensity being P.sub.L. The system includes a mechanism to keep relationship of P.sub.H +.alpha.P.sub.L equal to a constant (.alpha. being a constant depending on the recording conditions). The laser drive circuit is so adjusted that P.sub.H and P.sub.L always provide an optimal condition even if P.sub.H and/or P.sub.L vary. Thus recording can always be performed under optimal conditions to enhance the reliability of the information storage system to expand the power margin of a recording medium and to increase the percentage yield of information medium.

摘要翻译： 提供了一种用于通过在能够覆盖信息的介质上照射光来记录和再现信息的信息存储系统。 信息存储系统即使改变光强度也能够记录信息，从而提高可靠性。 调制重写时光强度，光强度越高，PH越强，光强度越小。 该系统包括保持PH +αPL的关系等于一个常数的机制（根据记录条件，α是一个常数）。 激光驱动电路如此调整，即使PH和/或PL变化，PH和PL总是提供最佳条件。 因此，可以始终在最佳条件下执行记录，以增强信息存储系统的可靠性，以扩大记录介质的功率余量并提高信息介质的产量百分比。

公开(公告)号：US5593791A

公开(公告)日：1997-01-14

申请号：US543517

申请日：1995-10-16

申请人： Yoshio Fujii ,  Takashi Tokunaga ,  Yoshiyuki Nakaki ,  Kazuhiko Tsutsumi ,  Kazuo Hashima ,  Tatsuya Fukami ,  Yuji Kawano

发明人： Yoshio Fujii ,  Takashi Tokunaga ,  Yoshiyuki Nakaki ,  Kazuhiko Tsutsumi ,  Kazuo Hashima ,  Tatsuya Fukami ,  Yuji Kawano

IPC分类号： G11B11/105 ,  G11B5/66

CPC分类号： G11B11/10586 ,  G11B11/10506 ,  Y10S428/90 ,  Y10T428/265

摘要： A magneto-optical recording medium wherein an initializing layer is covered with a resin layer for dissipating heat from the initializing layer thereby to prevent signal degradation at high recording power and thus excellent in record/reproduce repetition times, and the initializing layer is compositionally modulated thereby to broaden allowable ranges for the recording/reproducing light intensity and for the external magnetic field, besides the composition of a first or a second magnetic layer is controlled thereby to enhance recording sensitivity, and the exchange-coupling force between the first and second magnetic layers or the magnetic field strengthe to reverse the magnetization of the first magnetic layer is controlled thereby to enhance the recording/reproducing characteristics.

摘要翻译： 一种磁光记录介质，其中初始化层被用于从初始化层散热的树脂层覆盖，从而防止在高记录功率下的信号劣化，从而优良的记录/再现重复次数，并且初始化层被组成调制 为了扩大记录/再现光强度和外部磁场的允许范围，控制第一或第二磁性层的组成，从而提高记录灵敏度，并且第一和第二磁性层之间的交换耦合力 或者磁场增强以逆转第一磁性层的磁化，从而增强记录/再现特性。

公开(公告)号：US5347485A

公开(公告)日：1994-09-13

申请号：US25250

申请日：1993-03-02

申请人： Motohisa Taguchi ,  Tatsuya Fukami ,  Kazuo Hashima ,  Yukari Toide ,  Yuji Kawano ,  Yoshio Fujii ,  Takashi Tokunaga ,  Yoshiyuki Nakaki ,  Kazuhiko Tsutsumi ,  Hiroshi Kobayashi ,  Yuzou Ohdoi ,  Shinji Tanabe ,  Hiroshi Shibata

发明人： Motohisa Taguchi ,  Tatsuya Fukami ,  Kazuo Hashima ,  Yukari Toide ,  Yuji Kawano ,  Yoshio Fujii ,  Takashi Tokunaga ,  Yoshiyuki Nakaki ,  Kazuhiko Tsutsumi ,  Hiroshi Kobayashi ,  Yuzou Ohdoi ,  Shinji Tanabe ,  Hiroshi Shibata

IPC分类号： G11C11/15 ,  G11C11/18

CPC分类号： G11C11/15 ,  G11C11/18

摘要： A magnetic thin film memory wherein the memory is composed of magnetic thin films with a layer of a higher coercive force and a layer of a lower coercive force via a nonmagnetic layer laminated repetitively, or magnetic thin films having the easy magnetization axis which lies between the perpendicular and the horizontal directions of the magnetic thin film, and information is recorded on the layer of a lower coercive force, or information is recorded by changing the direction of the magnetization by means of a magnetic field applied by two recording lines which cross the magnetic thin film, thereby to obtain a sufficient amplitude of reproduction signal even when the size of the memory is reduced.

摘要翻译： 一种磁性薄膜存储器，其中存储器由具有较高矫顽力的层的磁性薄膜和重复层叠的非磁性层的矫顽力较低的层组成，或者具有容易磁化轴的磁性薄膜位于 磁性薄膜的垂直方向和水平方向，信息被记录在矫顽力较低的层上，或通过利用穿过磁性体的两条记录线施加的磁场改变磁化方向来记录信息 从而即使当存储器的尺寸减小时也获得足够的再现信号幅度。

公开(公告)号：US20130288467A1

公开(公告)日：2013-10-31

申请号：US13979564

申请日：2011-06-09

申请人： Yuji Ebiike ,  Takahiro Nakatani ,  Hiroshi Watanabe ,  Yoshio Fujii ,  Sunao Aya ,  Yoshiyuki Nakaki ,  Tsuyoshi Kawakami ,  Shuhei Nakata

发明人： Yuji Ebiike ,  Takahiro Nakatani ,  Hiroshi Watanabe ,  Yoshio Fujii ,  Sunao Aya ,  Yoshiyuki Nakaki ,  Tsuyoshi Kawakami ,  Shuhei Nakata

IPC分类号： H01L21/266

CPC分类号： H01L21/266 ,  H01L21/0465 ,  H01L23/544 ,  H01L29/0619 ,  H01L29/0661 ,  H01L29/1608 ,  H01L29/6606 ,  H01L29/66068 ,  H01L29/872 ,  H01L2223/54426 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device capable of suppressing generation of a high electric field and preventing a dielectric breakdown from occurring, and a method of manufacturing the same. The method of manufacturing a semiconductor device includes (a) preparing an n+ substrate to be a ground constituted by a silicon carbide semiconductor of a first conductivity type, (b) forming a recess structure surrounding an element region on the n+ substrate by using a resist pattern, and (c) forming a guard ring injection layer to be an impurity layer of a second conductivity type in a recess bottom surface and a recess side surface in the recess structure by impurity injection through the resist pattern, and a corner portion of the recess structure is covered with the impurity layer.

摘要翻译： 能够抑制高电场的产生和防止发生电介质击穿的半导体装置及其制造方法。 制造半导体器件的方法包括：（a）制备作为由第一导电类型的碳化硅半导体构成的接地的n +衬底，（b）通过使用抗蚀剂形成围绕n +衬底上的元件区域的凹陷结构 图案，以及（c）通过通过抗蚀剂图案的杂质注入，在凹陷结构的凹槽底表面和凹陷侧表面中形成作为第二导电类型的杂质层的保护环注入层，以及 凹陷结构被杂质层覆盖。

公开(公告)号：US09202940B2

公开(公告)日：2015-12-01

申请号：US14239375

申请日：2012-07-31

申请人： Tsuyoshi Kawakami ,  Yoshiyuki Nakaki ,  Yoshio Fujii ,  Hiroshi Watanabe ,  Shuhei Nakata ,  Kohei Ebihara ,  Akihiko Furukawa

发明人： Tsuyoshi Kawakami ,  Yoshiyuki Nakaki ,  Yoshio Fujii ,  Hiroshi Watanabe ,  Shuhei Nakata ,  Kohei Ebihara ,  Akihiko Furukawa

IPC分类号： H01L29/06 ,  H01L29/872 ,  H01L29/861 ,  H01L29/16

CPC分类号： H01L29/8725 ,  H01L29/0619 ,  H01L29/0623 ,  H01L29/1608 ,  H01L29/8611 ,  H01L29/872

摘要： A semiconductor device having high breakdown voltage and high reliability without forming an embedded injection layer with high position accuracy. The semiconductor device includes a base as an active area of a second conductivity type formed on a surface layer of a semiconductor layer of a first conductivity type to constitute a semiconductor element; guard rings as a plurality of first impurity regions of the second conductivity type formed on the surface layer of the semiconductor layer spaced apart from each other to respectively surround the base in plan view; and an embedded injection layer as a second impurity region of the second conductivity type embedded in the surface layer of the semiconductor layer to connect at least two bottom portions of the plurality of guard rings.

摘要翻译： 具有高击穿电压和高可靠性的半导体器件，而不形成具有高定位精度的嵌入式注入层。 半导体器件包括形成在第一导电类型的半导体层的表面层上的第二导电类型的有源区的基底，以构成半导体元件; 保护环作为多个第一导电类型的第一杂质区域，形成在半导体层的表面层上彼此间隔开以在平面图中分别包围基底; 以及作为第二导电类型的第二杂质区域的嵌入式注入层，其嵌入在半导体层的表面层中，以连接多个保护环的至少两个底部。

公开(公告)号：US09059086B2

公开(公告)日：2015-06-16

申请号：US13979564

申请日：2011-06-09

申请人： Yuji Ebiike ,  Takahiro Nakatani ,  Hiroshi Watanabe ,  Yoshio Fujii ,  Sunao Aya ,  Yoshiyuki Nakaki ,  Tsuyoshi Kawakami ,  Shuhei Nakata

发明人： Yuji Ebiike ,  Takahiro Nakatani ,  Hiroshi Watanabe ,  Yoshio Fujii ,  Sunao Aya ,  Yoshiyuki Nakaki ,  Tsuyoshi Kawakami ,  Shuhei Nakata

IPC分类号： H01L21/265 ,  H01L21/76 ,  H01L21/266 ,  H01L29/06 ,  H01L29/16 ,  H01L29/66 ,  H01L21/04 ,  H01L23/544

CPC分类号： H01L21/266 ,  H01L21/0465 ,  H01L23/544 ,  H01L29/0619 ,  H01L29/0661 ,  H01L29/1608 ,  H01L29/6606 ,  H01L29/66068 ,  H01L29/872 ,  H01L2223/54426 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device capable of suppressing generation of a high electric field and preventing a dielectric breakdown from occurring, and a method of manufacturing the same. The method of manufacturing a semiconductor device includes (a) preparing an n+ substrate to be a ground constituted by a silicon carbide semiconductor of a first conductivity type, (b) forming a recess structure surrounding an element region on the n+ substrate by using a resist pattern, and (d) forming a guard ring injection layer to be an impurity layer of a second conductivity type in a recess bottom surface and a recess side surface in the recess structure by impurity injection through the resist pattern, and a corner portion of the recess structure is covered with the impurity layer.

摘要翻译： 能够抑制高电场的产生和防止发生电介质击穿的半导体装置及其制造方法。 制造半导体器件的方法包括：（a）制备作为由第一导电类型的碳化硅半导体构成的接地的n +衬底，（b）通过使用抗蚀剂形成围绕n +衬底上的元件区域的凹陷结构 图案，以及（d）通过通过抗蚀剂图案的杂质注入，在凹部结构的凹部底面和凹部侧面中形成作为第二导电类型的杂质层的保护环注入层，以及 凹陷结构被杂质层覆盖。

公开(公告)号：US20140203393A1

公开(公告)日：2014-07-24

申请号：US14239375

申请日：2012-07-31

申请人： Tsuyoshi Kawakami ,  Yoshiyuki Nakaki ,  Yoshio Fujii ,  Hiroshi Watanabe ,  Shuhei Nakata ,  Kohei Ebihara ,  Akihiko Furukawa

发明人： Tsuyoshi Kawakami ,  Yoshiyuki Nakaki ,  Yoshio Fujii ,  Hiroshi Watanabe ,  Shuhei Nakata ,  Kohei Ebihara ,  Akihiko Furukawa

IPC分类号： H01L29/872

CPC分类号： H01L29/8725 ,  H01L29/0619 ,  H01L29/0623 ,  H01L29/1608 ,  H01L29/8611 ,  H01L29/872

摘要： A semiconductor device having high breakdown voltage and high reliability without forming an embedded injection layer with high position accuracy. The semiconductor device includes a base as an active area of a second conductivity type formed on a surface layer of a semiconductor layer of a first conductivity type to constitute a semiconductor element; guard rings as a plurality of first impurity regions of the second conductivity type formed on the surface layer of the semiconductor layer spaced apart from each other to respectively surround the base in plan view; and an embedded injection layer as a second impurity region of the second conductivity type embedded in the surface layer of the semiconductor layer to connect at least two bottom portions of the plurality of guard rings.

摘要翻译： 具有高击穿电压和高可靠性的半导体器件，而不形成具有高定位精度的嵌入式注入层。 半导体器件包括形成在第一导电类型的半导体层的表面层上的第二导电类型的有源区的基底，以构成半导体元件; 保护环作为多个第一导电类型的第一杂质区域，形成在半导体层的表面层上彼此间隔开以在平面图中分别包围基底; 以及作为第二导电类型的第二杂质区域的嵌入式注入层，其嵌入在半导体层的表面层中，以连接多个保护环的至少两个底部。