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    Method of manufacturing semiconductor device
    5.
    发明授权
    Method of manufacturing semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号：US08404537B2

    公开(公告)日：2013-03-26

    申请号：US13487280

    申请日：2012-06-04

    申请人： Isao Kamioka ,  Junichi Shiozawa ,  Ryu Kato ,  Yoshio Ozawa

    发明人： Isao Kamioka ,  Junichi Shiozawa ,  Ryu Kato ,  Yoshio Ozawa

    IPC分类号： H01L21/337 ,  H01L21/8236

    CPC分类号： H01L29/7881 ,  H01L21/76208 ,  H01L27/11521 ,  H01L29/66825

    摘要： In one embodiment, a method of manufacturing a semiconductor device includes forming a conductive film whose upper surface and side surface are exposed and an insulation film whose upper surface is exposed, on a semiconductor substrate. The method further includes supplying oxidizing ions or nitriding ions contained in plasma generated by a microwave, a radio-frequency wave, or electron cyclotron resonance to the exposed side surface of the conductive film and the exposed upper surface of the insulation film, by applying a predetermined voltage to the semiconductor substrate, thereby performing anisotropic oxidation or anisotropic nitridation of the exposed side surface of the conductive film and the exposed upper surface of the insulation film.

    摘要翻译： 在一个实施例中，制造半导体器件的方法包括在半导体衬底上形成其上表面和侧表面被暴露的导电膜和上表面暴露的绝缘膜。 该方法还包括通过施加微波，射频波或电子回旋共振等将由等离子体产生的等离子体中包含的氧化离子或氮化离子供应到导电膜的暴露侧表面和绝缘膜的暴露的上表面 对半导体衬底施加预定的电压，从而进行导电膜的暴露的侧表面和绝缘膜的暴露的上表面的各向异性氧化或各向异性氮化。

    METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
    6.
    发明申请
    METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
    制造半导体器件的方法

    公开(公告)号：US20120122294A1

    公开(公告)日：2012-05-17

    申请号：US13326499

    申请日：2011-12-15

    申请人： Isao Kamioka ,  Junichi Shiozawa ,  Ryu Kato ,  Yoshio Ozawa

    发明人： Isao Kamioka ,  Junichi Shiozawa ,  Ryu Kato ,  Yoshio Ozawa

    IPC分类号： H01L21/762 ,  H01L21/28

    CPC分类号： H01L29/7881 ,  H01L21/76208 ,  H01L27/11521 ,  H01L29/66825

    摘要： In one embodiment, a method of manufacturing a semiconductor device includes successively forming first and second films to be processed on a semiconductor substrate. The method further includes removing a predetermined region of the second film by etching, to form a slit part including sidewall parts and a bottom part, the sidewall parts including side surfaces of the second film, and the bottom part including an upper surface of the first film. The method further includes supplying oxidizing ions or nitriding ions contained in plasma, generated by a microwave, a radio-frequency wave, or electron cyclotron resonance, to the sidewall parts and the bottom part of the slit part by applying a predetermined voltage to the semiconductor substrate, thereby performing anisotropic oxidation or anisotropic nitridation of the sidewall parts and the bottom part of the slit part.

    摘要翻译： 在一个实施例中，制造半导体器件的方法包括在半导体衬底上依次形成待处理的第一和第二膜。 该方法还包括通过蚀刻去除第二膜的预定区域，以形成包括侧壁部分和底部的狭缝部分，所述侧壁部分包括第二膜的侧表面，并且底部包括第一膜的上表面 电影。 该方法还包括通过向半导体施加预定电压将由微波，射频波或电子回旋共振产生的等离子体中包含的氧化离子或氮化离子供应到狭缝部分的侧壁部分和底部。 从而进行侧壁部和狭缝部的底部的各向异性氧化或各向异性氮化。

    Method of manufacturing semiconductor device
    7.
    发明申请
    Method of manufacturing semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号：US20110065262A1

    公开(公告)日：2011-03-17

    申请号：US12926357

    申请日：2010-11-12

    申请人： Isao Kamioka ,  Junichi Shiozawa ,  Ryu Kato ,  Yoshio Ozawa

    发明人： Isao Kamioka ,  Junichi Shiozawa ,  Ryu Kato ,  Yoshio Ozawa

    IPC分类号： H01L21/326

    CPC分类号： H01L29/7881 ,  H01L21/76208 ,  H01L27/11521 ,  H01L29/66825

    摘要： A method of manufacturing a semiconductor device according to an embodiment of the present invention includes forming, on a surface of a semiconductor substrate, an isolation trench including sidewall parts and a bottom part, or a stepped structure including a first planar part, a second planar part, and a step part located at a boundary between the first planar part and the second planar part, and supplying oxidizing ions or nitriding ions contained in plasma generated by a microwave, a radio-frequency wave, or electron cyclotron resonance to the sidewall parts and the bottom part of the isolation trench or the first and second planar parts and the step part of the stepped structure by applying a predetermined voltage to the semiconductor substrate, to perform anisotropic oxidation or anisotropic nitridation of the sidewall parts and the bottom part of the isolation trench or the first and second planar parts and the step part of the stepped structure.

    摘要翻译： 根据本发明实施例的制造半导体器件的方法包括在半导体衬底的表面上形成包括侧壁部分和底部的隔离沟槽，或者包括第一平面部分，第二平面部分 部分和位于第一平面部分和第二平面部分之间的边界处的阶梯部分，并且将由微波产生的等离子体中产生的等离子体中的氧离子或氮化离子，射频波或电子回旋共振提供给侧壁部分 以及通过向半导体衬底施加预定电压来隔离沟槽的底部或第一和第二平面部分和台阶部分的台阶部分，以进行侧壁部分和底部部分的各向异性氧化或各向异性氮化 隔离沟槽或第一和第二平面部分以及台阶结构的阶梯部分。

    Method of manufacturing semiconductor device
    8.
    发明授权
    Method of manufacturing semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号：US07858467B2

    公开(公告)日：2010-12-28

    申请号：US12412962

    申请日：2009-03-27

    申请人： Isao Kamioka ,  Junichi Shiozawa ,  Ryu Kato ,  Yoshio Ozawa

    发明人： Isao Kamioka ,  Junichi Shiozawa ,  Ryu Kato ,  Yoshio Ozawa

    IPC分类号： H01L21/337 ,  H01L21/8238

    CPC分类号： H01L29/7881 ,  H01L21/76208 ,  H01L27/11521 ,  H01L29/66825

    摘要： A method of manufacturing a semiconductor device according to an embodiment of the present invention includes forming, on a surface of a semiconductor substrate, an isolation trench including sidewall parts and a bottom part, or a stepped structure including a first planar part, a second planar part, and a step part located at a boundary between the first planar part and the second planar part, and supplying oxidizing ions or nitriding ions contained in plasma generated by a microwave, a radio-frequency wave, or electron cyclotron resonance to the sidewall parts and the bottom part of the isolation trench or the first and second planar parts and the step part of the stepped structure by applying a predetermined voltage to the semiconductor substrate, to perform anisotropic oxidation or anisotropic nitridation of the sidewall parts and the bottom part of the isolation trench or the first and second planar parts and the step part of the stepped structure.

    摘要翻译： 根据本发明实施例的制造半导体器件的方法包括在半导体衬底的表面上形成包括侧壁部分和底部的隔离沟槽，或者包括第一平面部分，第二平面部分 部分和位于第一平面部分和第二平面部分之间的边界处的阶梯部分，并且将由微波产生的等离子体中产生的等离子体中的氧离子或氮化离子，射频波或电子回旋共振提供给侧壁部分 以及通过向半导体衬底施加预定电压来隔离沟槽的底部或第一和第二平面部分和台阶部分的台阶部分，以进行侧壁部分和底部部分的各向异性氧化或各向异性氮化 隔离沟槽或第一和第二平面部分以及台阶结构的阶梯部分。

    METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
    9.
    发明申请
    METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 有权
    制造半导体器件的方法

    公开(公告)号：US20120282773A1

    公开(公告)日：2012-11-08

    申请号：US13487280

    申请日：2012-06-04

    申请人： Isao Kamioka ,  Junichi Shiozawa ,  Ryu Kato ,  Yoshio Ozawa

    发明人： Isao Kamioka ,  Junichi Shiozawa ,  Ryu Kato ,  Yoshio Ozawa

    IPC分类号： H01L21/302

    CPC分类号： H01L29/7881 ,  H01L21/76208 ,  H01L27/11521 ,  H01L29/66825

    摘要： In one embodiment, a method of manufacturing a semiconductor device includes forming a conductive film whose upper surface and side surface are exposed and an insulation film whose upper surface is exposed, on a semiconductor substrate. The method further includes supplying oxidizing ions or nitriding ions contained in plasma generated by a microwave, a radio-frequency wave, or electron cyclotron resonance to the exposed side surface of the conductive film and the exposed upper surface of the insulation film, by applying a predetermined voltage to the semiconductor substrate, thereby performing anisotropic oxidation or anisotropic nitridation of the exposed side surface of the conductive film and the exposed upper surface of the insulation film.

    摘要翻译： 在一个实施例中，制造半导体器件的方法包括在半导体衬底上形成其上表面和侧表面被暴露的导电膜和上表面暴露的绝缘膜。 该方法还包括通过施加微波，射频波或电子回旋共振等将由等离子体产生的等离子体中包含的氧化离子或氮化离子供应到导电膜的暴露侧表面和绝缘膜的暴露的上表面 对半导体衬底施加预定的电压，从而进行导电膜的暴露的侧表面和绝缘膜的暴露的上表面的各向异性氧化或各向异性氮化。

    Method of manufacturing semiconductor device
    10.
    发明授权
    Method of manufacturing semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号：US08097503B2

    公开(公告)日：2012-01-17

    申请号：US12926357

    申请日：2010-11-12

    申请人： Isao Kamioka ,  Junichi Shiozawa ,  Ryu Kato ,  Yoshio Ozawa

    发明人： Isao Kamioka ,  Junichi Shiozawa ,  Ryu Kato ,  Yoshio Ozawa

    IPC分类号： H01L21/337 ,  H01L21/8236

    CPC分类号： H01L29/7881 ,  H01L21/76208 ,  H01L27/11521 ,  H01L29/66825

    摘要： A method of manufacturing a semiconductor device according to an embodiment of the present invention includes forming, on a surface of a semiconductor substrate, an isolation trench including sidewall parts and a bottom part, or a stepped structure including a first planar part, a second planar part, and a step part located at a boundary between the first planar part and the second planar part, and supplying oxidizing ions or nitriding ions contained in plasma generated by a microwave, a radio-frequency wave, or electron cyclotron resonance to the sidewall parts and the bottom part of the isolation trench or the first and second planar parts and the step part of the stepped structure by applying a predetermined voltage to the semiconductor substrate, to perform anisotropic oxidation or anisotropic nitridation of the sidewall parts and the bottom part of the isolation trench or the first and second planar parts and the step part of the stepped structure.

    摘要翻译： 根据本发明实施例的制造半导体器件的方法包括在半导体衬底的表面上形成包括侧壁部分和底部的隔离沟槽，或者包括第一平面部分，第二平面部分 部分和位于第一平面部分和第二平面部分之间的边界处的阶梯部分，并且将由微波产生的等离子体中产生的等离子体中的氧离子或氮化离子，射频波或电子回旋共振提供给侧壁部分 以及通过向半导体衬底施加预定电压来隔离沟槽的底部或第一和第二平面部分和台阶部分的台阶部分，以进行侧壁部分和底部部分的各向异性氧化或各向异性氮化 隔离沟槽或第一和第二平面部分以及台阶结构的阶梯部分。