专利检索 ap:("Yoshitaka Hamada" OR "Fujio Yagihashi" OR "Hideo Nakagawa" OR "Masaru Sasao") AND inv:"Masaru Sasao" 第 1 页

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发明申请
Porous film, composition and manufacturing method, interlayer dielectric film, and semiconductor device 审中-公开

公开(公告)号：US20060220253A1

公开(公告)日：2006-10-05

申请号：US11446160

申请日：2006-06-05

申请人： Yoshitaka Hamada , Fujio Yagihashi , Hideo Nakagawa , Masaru Sasao

发明人： Yoshitaka Hamada , Fujio Yagihashi , Hideo Nakagawa , Masaru Sasao

IPC分类号： H01L23/52 , H01L23/48 , H01L29/40

CPC分类号： C08J9/0014 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/31695

摘要： A porous film-forming composition comprising (A) a curable silicone resin having a Mn of at least 100, (B) a micelle-forming surfactant, and (C) a compound which generates an acid upon pyrolysis remains stable during storage. The composition is coated and heat treated to form a porous film which has flatness, uniformity, a low dielectric constant and a high mechanical strength so that it is best suited as an interlayer dielectric film in the fabrication of semiconductor devices.