公开(公告)号：US06432558B1

公开(公告)日：2002-08-13

申请号：US09634086

申请日：2000-08-08

申请人： Yasuhiro Nabika ,  Tetsukazu Okamoto ,  Toshiharu Hirota ,  Yoshitaka Nagao

发明人： Yasuhiro Nabika ,  Tetsukazu Okamoto ,  Toshiharu Hirota ,  Yoshitaka Nagao

IPC分类号： C04B34468

CPC分类号： H01C7/025 ,  Y10T428/12528 ,  Y10T428/12611 ,  Y10T428/12681 ,  Y10T428/12729

摘要： A semiconductor ceramic device comprises a body composed of a semiconductor ceramic having a positive resistance-temperature coefficient primarily composed of barium titanate and electrodes provided on the body, in which the resistance-temperature coefficient is 9%/° C. or more, resistivity is 3.5 ∩·cm or less, and withstand voltage is 50 V/mm or more. As the semiconductor ceramic forming the body provided in a thermistor having positive resistance-temperature characteristics, a semiconductor ceramic having a positive resistance-temperature coefficient is used, in which the semiconductor ceramic has an average particle diameter of about 7 to 12 &mgr;m and comprises barium titanate as a major component and sodium in an amount of about 70 ppm or less on a weight basis.

摘要翻译： 半导体陶瓷器件包括由主要由钛酸钡构成的正电阻温度系数的半导体陶瓷和设置在本体上的电极组成的本体，其中电阻温度系数为9％/℃以上，电阻率为 3.5∩.cm以下，耐压为50 V / mm以上。 作为形成具有正电阻温度特性的热敏电阻的本体的半导体陶瓷，使用具有正电阻温度系数的半导体陶瓷，其中半导体陶瓷的平均粒径为7〜12μm左右， 钛酸盐作为主要成分，以重量计约70ppm以下的钠。

公开(公告)号：US06522238B2

公开(公告)日：2003-02-18

申请号：US09903037

申请日：2001-07-11

申请人： Yoshitaka Nagao ,  Yasuhiro Nabika ,  Toshiharu Hirota

发明人： Yoshitaka Nagao ,  Yasuhiro Nabika ,  Toshiharu Hirota

IPC分类号： H01C710

CPC分类号： H01C7/025

摘要： A semiconductor ceramic contains erbium as a semiconducting agent in primary components of barium titanate, strontium titanate, lead titanate and calcium titanate, with the average grain diameter of the semiconductor ceramic exceeding about 5 &mgr;m but not exceeding about 14 &mgr;m. Further, the semiconductor ceramic contains as additives a compound containing Er with the Er being more than about 0.10 mol but no more than about 0.33 mol, a compound containing Mn with the Mn being about 0.01 mol or more but no more than about 0.03 mol, and a compound containing Si with the Si being about 1.0 mol or more but no more than about 5.0 mol, per 100 mol of the primary component. Thus, a semiconductor ceramic and positive-temperature-coefficient thermistor can be provided with high-flash-breakdown capability, excellent results in ON-OFF application tests and few irregularities in resistance values.

公开(公告)号：US5939972A

公开(公告)日：1999-08-17

申请号：US857097

申请日：1997-05-15

申请人： Yoshitaka Nagao ,  Toshiharu Hirota ,  Yasuhiro Nabika

发明人： Yoshitaka Nagao ,  Toshiharu Hirota ,  Yasuhiro Nabika

IPC分类号： H01C1/14 ,  H01C7/02 ,  H01C7/10

CPC分类号： H01C1/1406 ,  H01C7/02

摘要： A thermistor element with positive temperature characteristic (PTC) has a planar ceramic member with a positive temperature characteristic of which the thickness is greater at its peripheral part than at the center part, decreasing either gradually or in a stepwise manner. Protrusions may be formed along its periphery. A PTC thermistor is formed with electrodes formed on both main surfaces of such a PTC thermistor, each electrode having a lower-layer electrode all over a main surface and an upper-layer electrode on the lower-layer electrode. The upper-layer electrode has a smaller surface area than the lower-layer electrode such that a portion of the lower-surface electrode is exposed at the periphery. The upper-layer electrodes may be formed at the center parts of the main surfaces, exclusive of the peripheral parts or where the protrusions are formed. The lower-layer electrodes may be mostly of Ni and the upper-layer electrodes mainly of Ag.

摘要翻译： 具有正温度特性（PTC）的热敏电阻元件具有正温度特性的平面陶瓷构件，其周边部分的厚度大于中心部分的厚度，逐渐减小或逐步减小。 突起可沿其周边形成。 PTC热敏电阻器形成有形成在这种PTC热敏电阻的两个主表面上的电极，每个电极在整个主表面上具有下层电极，在下层电极上具有上层电极。 上层电极具有比下层电极更小的表面积，使得下表面电极的一部分在周边露出。 上层电极可以形成在主表面的中心部分，不包括周边部分或形成突起的位置。 下层电极大部分为Ni，上层电极主要为Ag。

公开(公告)号：US06362521B1

公开(公告)日：2002-03-26

申请号：US09427997

申请日：1999-10-27

申请人： Yasuhiro Nabika ,  Tetsukazu Okamoto ,  Toshiharu Hirota ,  Noriyuki Yamamoto

发明人： Yasuhiro Nabika ,  Tetsukazu Okamoto ,  Toshiharu Hirota ,  Noriyuki Yamamoto

IPC分类号： H01L23053

CPC分类号： C04B35/465 ,  C04B35/4684

摘要： A semiconductor ceramic composed of barium titanate, lead titanate, strontium titanate, and calcium titanate as primary components, includes samarium oxide as a semiconductor-forming agent in the primary components, and the average diameter of crystalline particles of the semiconductor ceramic is about 7 to 12 &mgr;m. The semiconductor ceramic has a resistivity at room temperature not greater than 3.5 &OHgr;cm, a withstand voltage not less than 50 V/mm, a resistance-temperature coefficient &agr;10-100 not less than 9%/°C. and also has less variability of resistance.

摘要翻译： 由钛酸钡，钛酸铅，钛酸锶和钛酸钙作为主要成分构成的半导体陶瓷在主要成分中包含作为半导体形成剂的氧化钐，半导体陶瓷的结晶粒子的平均直径为约7〜 12个妈妈 半导体陶瓷在室温下的电阻率不大于3.5欧姆·厘米，耐压不低于50V / mm，电阻温度系数α10-100不低于9％/℃。 并且电阻的变异性也较小。

公开(公告)号：US06346496B2

公开(公告)日：2002-02-12

申请号：US09360313

申请日：1999-07-23

申请人： Yasuhiro Nabika ,  Tetsukazu Okamoto ,  Toshiharu Hirota ,  Noriyuki Yamamoto

发明人： Yasuhiro Nabika ,  Tetsukazu Okamoto ,  Toshiharu Hirota ,  Noriyuki Yamamoto

IPC分类号： C04B35468

CPC分类号： H01C7/025 ,  H01C17/30

摘要： A ceramic for the PTC thermistor having a resistivity at room temperature of 5 &OHgr;·cm or less, static withstanding voltage of 60 V/mm or more and temperature resistance coefficient of 9.0 %/° C., having small dispersion of the resistance, is composed of principal components of about 30 to 97 mol % of BaTiO3, about 1 to 50 mol % of PbTiO3, about 1 to 30 mol % of SrTiO3 and about 1 to 25 mol % of CaTiO3 (the total content of them being 100 mol %), as well as about 0.1 to 0.3 mole of Sm, about 0.01 to 0.03 mole of Mn and 0 to about 2.0 mole of Si relative to 100 moles of the principal components, the composite material being preferably heat-treated in an oxidative atmosphere after being fired in a reducing or neutral atmosphere for obtaining the ceramic.

摘要翻译： 在室温下具有5欧姆·厘米或更小的电阻率的PTC热敏电阻陶瓷，静电耐受电压为60V / mm以上，耐电阻系数为9.0％/℃，电阻分散小，为 由BaTiO 3的约30〜97摩尔％，PbTiO 3的1〜50摩尔％，SrTiO 3的1〜30摩尔％，CaTiO 3的1〜25摩尔％的主成分（其总量为100摩尔％ ），以及约0.1〜0.3摩尔的Sm，约0.01〜0.03摩尔的Mn和0〜约2.0摩尔的Si相对于100摩尔的主要成分，该复合材料优选在氧化气氛中经过热处理 在还原或中性气氛中烧制以获得陶瓷。

公开(公告)号：US06187707B1

公开(公告)日：2001-02-13

申请号：US09308513

申请日：1999-05-20

申请人： Satoshi Kakihara ,  Toshiharu Hirota ,  Yasuhiro Nabika ,  Noriyuki Yamamoto

发明人： Satoshi Kakihara ,  Toshiharu Hirota ,  Yasuhiro Nabika ,  Noriyuki Yamamoto

IPC分类号： C04B35468

CPC分类号： H01C7/025 ,  C04B35/4684

摘要： A barium titanate-based semiconductive ceramic composition for facilitating miniaturization of thermistor devices by improving rush current resistance characteristics is provided. In the barium titanate-based semiconductive ceramic composition, a fraction of the Ba in BaTiO3 as the major component is replaced with 1 to 25 mole percent of Ca, 1 to 30 mole percent of Sr, and 1 to 50 mole percent of Pb; and wherein to 100 mole percent of the major component, the semiconductivity-imparting agent is added in an amount of 0.2 to 1.0 mole percent as a converted element content, and the additive comprises manganese oxide in an amount of 0.01 to 0.10 mole percent as a converted Mn content, silica in an amount of 0.5 to 5 mole percent as a converted SiO2 content, and magnesium oxide in an amount of 0.028 to 0.093 mole percent as a converted Mg content.

摘要翻译： 提供了一种通过提高冲击电流电阻特性来促进热敏电阻器件小型化的钛酸钡基半导体陶瓷组合物。 在钛酸钡系半导体陶瓷组合物中，作为主成分的BaTiO 3中的Ba的一部分被1〜25摩尔％的Ca，1〜30摩尔％的Sr和1〜50摩尔％的Pb代替， 其中，相对于100摩尔％的主成分，以半导电性赋予剂为0.2〜1.0摩尔％的量添加作为转化元素含量的添加剂，添加剂含有0.01〜0.10摩尔％的氧化锰， 转化的Mn含量，作为转化的SiO 2含量为0.5〜5摩尔％的二氧化硅，转化的Mg含量为0.028〜0.093摩尔％的氧化镁。

公开(公告)号：US06455454B1

公开(公告)日：2002-09-24

申请号：US09561518

申请日：2000-04-28

申请人： Yasuhiro Nabika ,  Tetsukazu Okamoto ,  Toshiharu Hirota

发明人： Yasuhiro Nabika ,  Tetsukazu Okamoto ,  Toshiharu Hirota

IPC分类号： C04B35468

CPC分类号： C04B35/4684 ,  H01C7/025

摘要： Provided is a semiconductor ceramic and a semiconductor ceramic element each having a room temperature specific resistance of 3 &OHgr;·cm or lower and a resistance temperature characteristic of 9%/° C. or more. The semiconductor ceramic is characterized in that the ratio R1/(R1+R2), in which R1 is the transgranular resistance value of the crystal particles and R2 is the intergranular resistance value of the crystal particles and R1+R2 is the overall resistance value representing the sum of R1 and R2, is about 0.35 to 0.85.

摘要翻译： 提供一种半导体陶瓷和半导体陶瓷元件，它们的室温电阻率为3欧姆·厘米或更低，电阻温度特性为9％/℃以上。 半导体陶瓷的特征在于R1 /（R1 + R2），其中R1是晶粒的晶粒间电阻值，R2是晶粒的晶间电阻值，R1 + R2是表示 R 1和R 2之和为约0.35至0.85。

公开(公告)号：US06311390B1

公开(公告)日：2001-11-06

申请号：US09415450

申请日：1999-10-08

申请人： Yoshiaki Abe ,  Takahiko Kawahara ,  Toshiharu Hirota

发明人： Yoshiaki Abe ,  Takahiko Kawahara ,  Toshiharu Hirota

IPC分类号： H01C702

CPC分类号： H01C7/021 ,  H01C17/006 ,  Y10T29/49085

摘要： Thermistor chips are produced by first obtaining elongated strips made of a sintered ceramic plate having a specified resistance-temperature characteristic and having thereon a plurality of mutually parallel grooves extending perpendicularly to its direction of elongation. On each of these strips, ohmic electrodes are formed, one extending continuously from one of its main surfaces to one of its side surfaces and another extending continuously from the other oppositely facing main surface to the opposite side surface. This may done by covering the strip completely with an electrically conductive film and separating it into two areal parts by forming a longitudinally extending slit on each of the main surfaces. These strips are then stacked one on top of another by aligning the grooves on each of these strips and adhesively attached together with a glass paste in between. The layered structure thus obtained is broken up along the aligned grooves to obtain individual units of which newly exposed surfaces may later be covered by an electrically insulating material.

摘要翻译： 通过首先获得由具有规定的电阻温度特性的烧结陶瓷板制成的长条，并且在其上具有垂直于其延伸方向延伸的多个相互平行的槽来制造热敏电阻芯片。 在这些条带中的每一条上，形成欧姆电极，一个从其主表面之一连续地延伸到其一个侧表面，另一个从另一个相对的主表面连续延伸到相对的侧表面。 这可以通过用导电膜完全覆盖条带并通过在每个主表面上形成纵向延伸的狭缝将其分离成两个区域来完成。 然后通过对准这些条带中的每一个上的凹槽并且用玻璃糊粘合在一起，将这些条状物叠置在另一个之上。 由此获得的层状结构沿着对准的沟槽被分解，以获得其中新露出的表面稍后可被电绝缘材料覆盖的单独的单元。

公开(公告)号：US07109841B2

公开(公告)日：2006-09-19

申请号：US10395143

申请日：2003-03-25

申请人： Takeo Haga ,  Hiroki Tanaka ,  Toshiharu Hirota ,  Hiroshi Kuwahara

发明人： Takeo Haga ,  Hiroki Tanaka ,  Toshiharu Hirota ,  Hiroshi Kuwahara

IPC分类号： H01C7/10

CPC分类号： H01C17/28 ,  H01C1/012 ,  H01C1/014 ,  H01C1/022 ,  H01C1/14 ,  H01C1/1406 ,  Y10T29/49082 ,  Y10T29/49085 ,  Y10T29/49098 ,  Y10T29/49101 ,  Y10T29/49139

摘要： A surface-mount positive temperature coefficient thermistor includes a disk-shaped positive temperature coefficient thermistor element having electrodes provided on opposing main surfaces thereof, an insulating case having an inner space with the thermistor element inserted therein, and a pair of metal terminals arranged to make electrical contact with the respective main surface electrodes of the thermistor element, and to sandwich therebetween the thermistor element. The insulating case includes a pair of main surfaces that are substantially parallel to the main surfaces of the thermistor element, a pair of opening side surfaces each having an opening, and a pair of end surfaces each having a terminal insertion hole provided therein. One end of each of the pair of metal terminals is inserted from the respective terminal insertion holes into the inner space, and the metal terminals press-hold the thermistor element so as to sandwich the thermistor element therebetween.

公开(公告)号：US07005827B2

公开(公告)日：2006-02-28

申请号：US11177193

申请日：2005-07-07

申请人： Yutaka Ikeda ,  Hiroki Tanaka ,  Toshiharu Hirota

发明人： Yutaka Ikeda ,  Hiroki Tanaka ,  Toshiharu Hirota

IPC分类号： H02P1/42

CPC分类号： H02P1/42

摘要： A starting circuit for a single-phase induction motor includes a motor starting positive characteristic thermistor and a triac arranged in a series connection, and a triac control positive characteristic thermistor connected in parallel with the motor starting positive characteristic thermistor, and including one terminal thereof connected to a gate of the triac. The triac control positive characteristic thermistor has a volume in the range of about 4.5 mm3 to about 30 mm3. The relationship of (√2×V×sin 45°)/R≧I is maintained with the triac control positive characteristic thermistor within an operating temperature range, where V represents a root-mean-square value of a power source voltage, R represents a resistance of the triac control positive characteristic thermistor, and I represents a gate turn-on current of the triac. The gate turn-on current I at an operating temperature of about 25° C. is about 20 mA or less.

摘要翻译： 单相感应电动机的起动电路包括电动机启动正特性热敏电阻和串联连接的三端双向可控硅开关元件，以及与电动机启动正特性热敏电阻并联连接的三端双向可控硅正极特性热敏电阻，并且其一端连接 到三端双向可控制开关门。 三端双向程序串联控制正特性热敏电阻的体积在约4.5mm 3至约30mm 3范围内。 （√2xVxsin45°）/ R> = I与三端双向程序控制正特性热敏电阻保持在工作温度范围内，其中V表示电源电压的均方根值，R表示电阻 三端双向可控硅开关控制正特性热敏电阻，I表示三端双向可控硅开关栅的导通电流。 在约25℃的工作温度下的栅极导通电流I为约20mA或更小。