摘要:
A thin film EL device is disclosed which comprises (a) a substrate, (b) a transparent electrode layer formed on the substrate, (c) one or more insulating layers formed on the transparent electrode layer, with at least one of the insulating layers comprising a crystalline nitride, (d) an electroluminescent emitting layer comprising a luminescent host material consisting of an alkali earth calcogen compound formed on the insulating layers, and (e) a back electrode layer. In the above thin film EL device, it is preferable that the insulating layer in contact with the electroluminescent layer comprise a crystalline aluminum nitride or boron nitride, and that the transparent electrode layer comprise a host material consisting of a C-axis oriented zinc oxide.
摘要:
A thin film electroluminescent device is disclosed which includes an electroluminescent emitting layer comprising an alkaline-earth selenide, such as SrSe (strontium selenide) and calcium selenide (CaSe), or an alkaline-earth sulfide, such as CaS (calcium sulfide) and strontium sulfide (SrS), as the luminescent host material, and a lanthanoid rare-earth element as an activator, and a method of fabricating the same is also disclosed.
摘要:
An electroluminescence multi-color display device in which two electroluminescence panels each comprising an electrode layer, an insulation layer and a luminescence layer laminated on a glass substrate so as to enable dot matrix display are appended to each other so that each of the glass substrates is situated to the outer side, wherein a film-like insulation member having a strip-like pattern made of electroconductive material formed on one surface thereof is used as a lead electrode for each of said electroluminescence panels and said lead electrode is used as a spacer between the two electroluminescence panels.
摘要:
A thin film electroluminescent element includes a luminous layer for emitting light by applying a voltage to the luminous layer through an electrode, the electrode being made of a metal; and a material for scattering the light and disposed on an end face of the luminous layer. A large picture polychromatic display apparatus includes a thin film electroluminescent element; and a material for scattering light and disposed in a luminous portion for emitting the light on an end face of the electroluminescent element, the light-scattering material forming a picture element. The display apparatus may include a thin film electroluminescent element formed by sequentially stacking a metallic electrode, an insulating layer and a luminous layer with each other on a glass substrate; and a material for scattering light and disposed on an end face of the element by scribing the element in the longitudinal direction thereof, the display apparatus being formed by combining a plurality of such elongated elements with each other, each of the elongated elements being provided with the light-scattering material. In the element, a plurality of luminous layers having different luminous wavelength characteristics are stacked with each other, and an insulating layer and a metallic electrode are disposed on both sides of the luminous layers. The light-scattering material mixes the lights emitted from the luminous layers with each other by the scattering of the lights and is disposed on the end faces of the luminous layers.
摘要:
A sputtering target, for forming a recording layer of an optical recording medium in which information is written and erased through a transition between two phases by utilizing electromagnetic wave energy, consists of a heat-treated and sintered composition represented by the formula:Ag.sub..alpha. In.sub..beta. Te.sub..gamma. Sb.sub..delta.wherein2.ltoreq..alpha..ltoreq.303.ltoreq..beta..ltoreq.3010.ltoreq..gamma..ltoreq.5015.ltoreq..delta..ltoreq.83.alpha.+.beta.+.gamma.+.delta.=100A method of producing the sputtering target, an optical recording medium having a recording layer formed through sputtering by use of the sputtering target, and a method of forming the recording layer are also disclosed.
摘要:
A sputtering target for fabricating a recording layer of a phase-change type optical recording medium contains a compound or mixture including as constituent. elements Ag, In, Te and Ob with the respective atomic percent (atom. %) of &agr;, &bgr;, &ggr; and &dgr; thereof being in the relationship of 2≦&agr;≦30, 3≦&bgr;≦30, 10≦&ggr;≦50, 15≦&dgr;≦83 and &agr;+&bgr;+&ggr;+&dgr;=100, and a method of producing the above sputtering target is provided. A phase-change type optical recording medium includes a recording layer containing as constituent elements Ag, In, To and Sb with the respective atomic percent of &agr;, &bgr;, &ggr; and &dgr; thereof being in the relationship of 0
摘要:
A sputtering target contains a target material including as constituent elements Ag, In, Te and Sb with the respective atomic percents (atom. %) of &agr;, &bgr;, &ggr; and &dgr; thereof being in the relationship of 0.5≦&agr;
摘要:
A phase-change optical recording medium has a substrate, and a lower heat-resistant protective layer, a recording layer capable of recording and erasing information by utilizing changes in the phase of a phase-change recording material in the recording layer, an upper heat-resistant protective layer and a light reflecting and heat dissipating layer, which are successively overlaid on the substrate in this order, the recording material including Ag, In, Sb and Te as the main elements, at least one additional element selected from the group (1) consisting of B, C, N, Al, Si and P, and at least one additional element selected from the group (2) consisting of halogen atoms and alkali metal elements.
摘要:
An optical recording medium comprising a recording layer which comprises a phase-change recording material causing a reversible phase change between a crystalline phase and an amorphous phase by irradiation with an electromagnetic wave, wherein the phase-change recording material mainly comprises materials expressed by the composition formula X&agr;Ge&bgr;Mn&ggr;Sb&dgr;Te&egr; with each of the components respectively fulfills 0≦&agr;≦5, 1≦&bgr;≦5, 1≦&ggr;≦10, 65 ≦&dgr;
摘要:
A sputtering target for fabricating a recording layer of a phase-change type optical recording medium contains a compound or mixture including as constituent elemets Ag, In, Te and Sb with the respective atomic percent (atom. %) of .alpha., .beta., .gamma. and .delta. thereof being in the relationship of 2.ltoreq..alpha..ltoreq.30, 3.ltoreq..beta..ltoreq.30, 10.ltoreq..gamma..ltoreq.50, 15.ltoreq..delta..ltoreq.83 and .alpha.+.beta.+.gamma.+.delta.=100, and a method of producing the above sputtering target is provided. A phase-change type optical recording medium includes a recording layer containing as constituent elements Ag, In, Te and Sb with the respective atomic percent of .alpha., .beta., .gamma. and .delta. thereof being in the relationship of 0