Thin film electroluminescence device
    1.
    发明授权
    Thin film electroluminescence device 失效
    薄膜电致发光器件

    公开(公告)号:US4975338A

    公开(公告)日:1990-12-04

    申请号:US337160

    申请日:1989-04-12

    摘要: A thin film EL device is disclosed which comprises (a) a substrate, (b) a transparent electrode layer formed on the substrate, (c) one or more insulating layers formed on the transparent electrode layer, with at least one of the insulating layers comprising a crystalline nitride, (d) an electroluminescent emitting layer comprising a luminescent host material consisting of an alkali earth calcogen compound formed on the insulating layers, and (e) a back electrode layer. In the above thin film EL device, it is preferable that the insulating layer in contact with the electroluminescent layer comprise a crystalline aluminum nitride or boron nitride, and that the transparent electrode layer comprise a host material consisting of a C-axis oriented zinc oxide.

    摘要翻译: 公开了一种薄膜EL器件,其包括:(a)衬底,(b)形成在衬底上的透明电极层,(c)形成在透明电极层上的一个或多个绝缘层,至少一个绝缘层 包括结晶氮化物,(d)包含由形成在所述绝缘层上的碱土金属化合物组成的发光主体材料的电致发光层,和(e)背面电极层。 在上述薄膜EL器件中,优选与电致发光层接触的绝缘层包含结晶氮化铝或氮化硼,并且透明电极层包括由C轴取向氧化锌组成的主体材料。

    Electrophotographic reproduction process
    5.
    发明授权
    Electrophotographic reproduction process 失效
    电子照相再现过程

    公开(公告)号:US4529292A

    公开(公告)日:1985-07-16

    申请号:US454077

    申请日:1982-12-28

    申请人: Seiichi Ohseto

    发明人: Seiichi Ohseto

    IPC分类号: G03G21/00 G03G21/08

    CPC分类号: G03G21/08

    摘要: An electrophotographic reproduction process for forming an reproduced image of an original image with the use of a photosensitive member including a Se-As material as a photoconductive material. The process includes the steps of uniform charging, image exposure, developing, transferring, and discharging by irradiation of light. When the photosensitive member is subjected to repeated cycles of reproduction operation, the time period between the completion of discharging of the last preceding reproduction process and the initation of uniform charging of the next following reproduction process is set at a predetermined value which is 0.2 seconds or more in order to avoid the light fatigue effect of the photoconductive material.

    摘要翻译: 一种电子照相再现方法,用于使用包含Se-As材料作为感光材料的感光构件形成原始图像的再现图像。 该方法包括通过照射光均匀充电,图像曝光,显影,转印和放电的步骤。 当感光构件经受重复循环的再现操作时,最后的再现处理的完成放电和下一次再现处理的均匀充电的开始之间的时间段被设置为0.2秒的预定值或 更多的是为了避免光电导材料的光疲劳效应。