公开(公告)号：US20080273564A1

公开(公告)日：2008-11-06

申请号：US11662600

申请日：2005-09-13

申请人： You Wang ,  Hirofumi Miyajima ,  Akiyoshi Watanabe ,  Hirofumi Kan

发明人： You Wang ,  Hirofumi Miyajima ,  Akiyoshi Watanabe ,  Hirofumi Kan

IPC分类号： H01S5/026

CPC分类号： H01S5/10 ,  H01S5/0655 ,  H01S5/101 ,  H01S5/1085 ,  H01S5/4031

摘要： A semiconductor laser device 3 includes an n-type clad layer 13, an active layer 15, and a p-type clad layer 17. The p-type clad layer 17 has a ridge portion 9 that forms a waveguide 4 in the active layer 15. The waveguide 4 extends along a central axial line B that is curved at a substantially constant curvature (curvature radius R). In such a waveguide 4, of the light components that resonate inside the waveguide 4, light components of higher spatial transverse mode order are greater in loss. Laser oscillations of high-order transverse modes can thus be suppressed while maintaining laser oscillations of low-order transverse modes. A semiconductor laser device and a semiconductor laser device array, which can emit laser light of comparatively high intensity and with which high-order transverse modes can be suppressed, are thereby realized.

摘要翻译： 半导体激光器件3包括n型覆盖层13，有源层15和p型覆盖层17。 p型覆盖层17具有在有源层15中形成波导4的脊部9。 波导4沿着基本上恒定曲率（曲率半径R）弯曲的中心轴线B延伸。 在这样的波导管4中，在波导4内谐振的光分量中，空间横向模式次序的光分量的损耗更大。 因此可以抑制高阶横模的激光振荡，同时保持低阶横模的激光振荡。 由此，可以实现能够发出较高强度的高光束和可以抑制高阶横模的半导体激光器件和半导体激光器件阵列。

公开(公告)号：US20090022194A1

公开(公告)日：2009-01-22

申请号：US11659198

申请日：2005-08-04

申请人： Akiyoshi Watanabe ,  Hirofumi Miyajima ,  Hirofumi Kan

发明人： Akiyoshi Watanabe ,  Hirofumi Miyajima ,  Hirofumi Kan

IPC分类号： H01S5/20

CPC分类号： H01S5/4031 ,  H01S5/101 ,  H01S5/1014 ,  H01S5/1085 ,  H01S5/16 ,  H01S5/2231 ,  H01S2301/18

摘要： In an active layer 15 of a semiconductor laser device 3, a refractive index type main waveguide 4 is formed by a ridge portion 9a of a p-type clad layer 17. Side surfaces 4g and 4h of the main waveguide 4 form a relative angle θ, based on a total reflection critical angle θc at the side surfaces 4g and 4h, with respect to a light emitting surface 1a and a light reflecting surface 1b. The main waveguide 4 is separated by predetermined distances from the light emitting surface 1a and the light reflecting surface 1b, and optical path portions 8a and 8b, for making a laser light L1 pass through, are disposed between one end of the main waveguide 4 and the light emitting surface 1a and between the other end of the main waveguide 4 and the light reflecting surface 1b. The optical path portions 8a and 8b are gain type waveguides and emit light components L2 and L3, which, among the light passing through the optical path portions 8a and 8b, deviate from a direction of a predetermined axis A, to the exterior. A semiconductor laser device and a semiconductor laser device array that can emit laser light of comparatively high intensity and can reduce side peaks are thereby realized.

摘要翻译： 在半导体激光器件3的有源层15中，折射率型主波导4由p型覆盖层17的脊部9a形成。主波导4的侧表面4g和4h形成相对角θ 基于相对于发光表面1a和光反射表面1b在侧表面4g和4h处的全反射临界角度。 主波导4与发光面1a和光反射面1b分离规定距离，激光L1通过的光路部8a，8b配置在主波导管4的一端和 发光表面1a和主波导4的另一端和光反射表面1b之间。 光路部分8a和8b是增益型波导，并且发射光通过光路部分8a和8b的光从预定轴线A的方向偏离的光分量L2和L3到外部。 从而可以实现能够发出较高强度的激光并能够减少侧峰的半导体激光器件和半导体激光器件阵列。

公开(公告)号：US07447248B2

公开(公告)日：2008-11-04

申请号：US10591229

申请日：2005-03-04

申请人： Hirofumi Miyajima ,  Akiyoshi Watanabe ,  Hirofumi Kan

发明人： Hirofumi Miyajima ,  Akiyoshi Watanabe ,  Hirofumi Kan

IPC分类号： H01S5/00 ,  H01S3/08

CPC分类号： H01S5/22 ,  H01S5/0655 ,  H01S5/10 ,  H01S5/101 ,  H01S5/1085 ,  H01S5/2036 ,  H01S5/4031 ,  H01S2301/18

摘要： The present invention relates to a semiconductor laser element and the like which can efficiently emit laser beams at a small emission angle using a simpler configuration. The semiconductor laser element has a structure where an n-type cladding layer, active layer and p-type cladding layer are sequentially laminated. The p-type cladding layer has a ridge portion for forming a refractive index type waveguide in the active layer. The ridge portion, at least the portion excluding the edges, extends in a direction crossing each normal line of both end faces of the refractive index type waveguide, which corresponds to the light emitting face and light reflecting face respectively, at an angle θ, which is equal to or less than the complementary angle θc of the total reflection critical angle on the side face of the refractive index type waveguide. The optical paths of light components which resonate in the refractive index type waveguide formed by the ridge portion having the above form are limited to optical paths where the lights are totally reflected on the side face of the refractive index type waveguide. In other words, the laser beams emitted from the light emitting end have a spatial horizontal single mode, and the waveguide width can be increased to further decrease the emission angle of the laser beams.

摘要翻译： 半导体激光元件等技术领域本发明涉及能够以更简单的结构有效地发射具有小发射角的激光束的半导体激光元件等。 半导体激光元件具有依次层叠n型覆层，有源层和p型覆层的结构。 p型包覆层具有用于在有源层中形成折射率型波导的脊部。 脊部至少除了边缘之外的部分沿着与角度θ对应于发光面和光反射面的折射率型波导的两个端面的每条法线的方向延伸， 等于或小于折射率型波导侧面上的全反射临界角的互补角度。 在由具有上述形式的脊部形成的折射率型波导中共振的光分量的光路限于光折射率型波导的侧面全光反射的光路。 换句话说，从发光端发射的激光束具有空间水平单模，并且可以增加波导宽度以进一步降低激光束的发射角。

公开(公告)号：US20070258496A1

公开(公告)日：2007-11-08

申请号：US10591229

申请日：2005-03-04

申请人： Hirofumi Miyajima ,  Akiyoshi Watanabe ,  Hirofumi Kan

发明人： Hirofumi Miyajima ,  Akiyoshi Watanabe ,  Hirofumi Kan

IPC分类号： H01S5/22

CPC分类号： H01S5/22 ,  H01S5/0655 ,  H01S5/10 ,  H01S5/101 ,  H01S5/1085 ,  H01S5/2036 ,  H01S5/4031 ,  H01S2301/18

摘要： The present invention relates to a semiconductor laser element and the like which can efficiently emit laser beams at a small emission angle using a simpler configuration. The semiconductor laser element has a structure where an n-type cladding layer, active layer and p-type cladding layer are sequentially laminated. The p-type cladding layer has a ridge portion for forming a refractive index type waveguide in the active layer. The ridge portion, at least the portion excluding the edges, extends in a direction crossing each normal line of both end faces of the refractive index type waveguide, which corresponds to the light emitting face and light reflecting face respectively, at an angle θ, which is equal to or less than the complementary angle θc of the total reflection critical angle on the side face of the refractive index type waveguide. The optical paths of light components which resonate in the refractive index type waveguide formed by the ridge portion having the above form are limited to optical paths where the lights are totally reflected on the side face of the refractive index type waveguide. In other words, the laser beams emitted from the light emitting end have a spatial horizontal single mode, and the waveguide width can be increased to further decrease the emission angle of the laser beams.

摘要翻译： 半导体激光元件等技术领域本发明涉及能够以更简单的结构有效地发射具有小发射角的激光束的半导体激光元件等。 半导体激光元件具有依次层叠n型覆层，有源层和p型覆层的结构。 p型包覆层具有用于在有源层中形成折射率型波导的脊部。 脊部至少除了边缘之外的部分沿着与角度θ对应于发光面和光反射面的折射率型波导的两个端面的每条法线的方向延伸， 等于或小于折射率型波导侧面上的全反射临界角的互补角度。 在由具有上述形式的脊部形成的折射率型波导中共振的光分量的光路限于光折射率型波导的侧面全光反射的光路。 换句话说，从发光端发射的激光束具有空间水平单模，并且可以增加波导宽度以进一步降低激光束的发射角。

公开(公告)号：US07885305B2

公开(公告)日：2011-02-08

申请号：US11659198

申请日：2005-08-04

申请人： Akiyoshi Watanabe ,  Hirofumi Miyajima ,  Hirofumi Kan

发明人： Akiyoshi Watanabe ,  Hirofumi Miyajima ,  Hirofumi Kan

IPC分类号： H01S5/00

CPC分类号： H01S5/4031 ,  H01S5/101 ,  H01S5/1014 ,  H01S5/1085 ,  H01S5/16 ,  H01S5/2231 ,  H01S2301/18

摘要： In an active layer 15 of a semiconductor laser device 3, a refractive index type main waveguide 4 is formed by a ridge portion 9a of a p-type clad layer 17. Side surfaces 4g and 4h of the main waveguide 4 form a relative angle θ, based on a total reflection critical angle θc at the side surfaces 4g and 4h, with respect to a light emitting surface 1a and a light reflecting surface 1b. The main waveguide 4 is separated by predetermined distances from the light emitting surface 1a and the light reflecting surface 1b, and optical path portions 8a and 8b, for making a laser light L1 pass through, are disposed between one end of the main waveguide 4 and the light emitting surface 1a and between the other end of the main waveguide 4 and the light reflecting surface 1b. The optical path portions 8a and 8b are gain type waveguides and emit light components L2 and L3, which, among the light passing through the optical path portions 8a and 8b, deviate from a direction of a predetermined axis A, to the exterior. A semiconductor laser device and a semiconductor laser device array that can emit laser light of comparatively high intensity and can reduce side peaks are thereby realized.

摘要翻译： 在半导体激光装置3的有源层15中，折射率型主波导4由p型覆盖层17的脊部9a形成。主波导4的侧面4g，4h形成相对角度θ ;相对于发光表面1a和光反射表面1b，基于侧表面4g和4h处的全反射临界角和c。 主波导4与发光面1a和光反射面1b分离规定距离，激光L1通过的光路部8a，8b配置在主波导管4的一端和 发光表面1a和主波导4的另一端和光反射表面1b之间。 光路部分8a和8b是增益型波导，并且发射光通过光路部分8a和8b的光从预定轴线A的方向偏离的光分量L2和L3到外部。 从而可以实现能够发出较高强度的激光并能够减少侧峰的半导体激光器件和半导体激光器件阵列。

公开(公告)号：US07577174B2

公开(公告)日：2009-08-18

申请号：US11596249

申请日：2005-06-23

申请人： Hirofumi Miyajima ,  Akiyoshi Watanabe ,  Hirofumi Kan

发明人： Hirofumi Miyajima ,  Akiyoshi Watanabe ,  Hirofumi Kan

IPC分类号： H01S5/10

CPC分类号： H01S5/22

摘要： The present invention relates to, for example, a semiconductor laser element capable of emitting laser beams having a small emitting angle efficiently with a simpler structure. The semiconductor laser element includes a first semiconductor portion, an active layer, and a second semiconductor portion. The first semiconductor portion has a ridge portion for forming a refractive index type waveguide region in the active layer. The waveguide region includes, at least, first and second portions having respective different total reflection critical angles at the side surfaces thereof. The first and second portions are arranged in such a manner that the relative angle of the side surfaces thereof to a light emitting surface and a light reflecting surface that are positioned at either end of the active layer is greater than the total reflection critical angle at the side surfaces. In this case, the relative angle of the side surfaces in the first portion to the light emitting surface and light reflecting surface is different from the relative angle of the side surfaces in the second portion to the light emitting surface and light reflecting surface.

摘要翻译： 本发明涉及例如能够以更简单的结构有效地发射具有小发射角的激光束的半导体激光元件。 半导体激光元件包括第一半导体部分，有源层和第二半导体部分。 第一半导体部分具有用于在有源层中形成折射率型波导区域的脊部分。 波导区域至少包括在其侧表面具有各自不同的全反射临界角的第一和第二部分。 第一和第二部分被布置成使得其侧表面相对于位于有源层的任一端处的发光表面和光反射表面的相对角度大于在该有源层的任一端处的全反射临界角 侧面。 在这种情况下，第一部分中的侧表面与发光表面和光反射表面的相对角度与第二部分中的侧表面相对于发光表面和光反射表面的相对角度不同。

公开(公告)号：US20070230528A1

公开(公告)日：2007-10-04

申请号：US11596249

申请日：2005-06-23

申请人： Hirofumi Miyajima ,  Akiyoshi Watanabe ,  Hirofumi Kan

发明人： Hirofumi Miyajima ,  Akiyoshi Watanabe ,  Hirofumi Kan

IPC分类号： H01S5/20

CPC分类号： H01S5/22

摘要： The present invention relates to, for example, a semiconductor laser element capable of emitting laser beams having a small emitting angle efficiently with a simpler structure. The semiconductor laser element includes a first semiconductor portion, an active layer, and a second semiconductor portion. The first semiconductor portion has a ridge portion for forming a refractive index type waveguide region in the active layer. The waveguide region includes, at least, first and second portions having respective different total reflection critical angles at the side surfaces thereof The first and second portions are arranged in such a manner that the relative angle of the side surfaces thereof to a light emitting surface and a light reflecting surface that are positioned at either end of the active layer is greater than the total reflection critical angle at the side surfaces. In this case, the relative angle of the side surfaces in the first portion to the light emitting surface and light reflecting surface is different from the relative angle of the side surfaces in the second portion to the light emitting surface and light reflecting surface.

摘要翻译： 本发明涉及例如能够以更简单的结构有效地发射具有小发射角的激光束的半导体激光元件。 半导体激光元件包括第一半导体部分，有源层和第二半导体部分。 第一半导体部分具有用于在有源层中形成折射率型波导区域的脊部分。 波导区域至少包括在其侧表面具有各自不同的全反射临界角的第一和第二部分。第一和第二部分被布置成使得其侧表面相对于发光表面的相对角度和 位于有源层的任一端的光反射表面大于侧表面处的全反射临界角。 在这种情况下，第一部分中的侧表面与发光表面和光反射表面的相对角度与第二部分中的侧表面相对于发光表面和光反射表面的相对角度不同。

公开(公告)号：US07885299B2

公开(公告)日：2011-02-08

申请号：US12335208

申请日：2008-12-15

申请人： Hirofumi Miyajima ,  Hirofumi Kan ,  Masanobu Yamanaka

发明人： Hirofumi Miyajima ,  Hirofumi Kan ,  Masanobu Yamanaka

IPC分类号： H01S3/04

CPC分类号： H01S5/405 ,  H01L23/473 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01S5/02264 ,  H01S5/02423 ,  H01S5/4025 ,  H01L2924/00

摘要： The present invention relates to a semiconductor laser apparatus having a structure for preventing the corrosion of a refrigerant flow path in a heat sink and for cooling a semiconductor laser array stably over a long period of time. The semiconductor laser apparatus comprises a semiconductor laser stack in which a plurality of semiconductor laser units are stacked, a refrigerant supplier, a piping for connecting these components, and a refrigerant flowing through these components. The refrigerant supplier supplies the refrigerant to the semiconductor laser stack. The refrigerant is comprised of fluorocarbon. Each of the semiconductor laser units is constituted by a pair of a semiconductor laser array and a heat sink. The heat sink has a refrigerant flow path.

摘要翻译： 本发明涉及一种半导体激光装置，其具有防止散热器中的制冷剂流路的腐蚀并且长时间稳定地冷却半导体激光器阵列的结构。 半导体激光装置包括堆叠多个半导体激光器单元的半导体激光器堆叠，制冷剂供应器，用于连接这些部件的管道和流经这些部件的制冷剂。 制冷剂供应器将制冷剂供应到半导体激光器堆叠。 制冷剂由碳氟化合物构成。 每个半导体激光器单元由一对半导体激光器阵列和散热器构成。 散热器具有制冷剂流动路径。

公开(公告)号：US07733570B2

公开(公告)日：2010-06-08

申请号：US10525670

申请日：2003-08-28

申请人： Yujin Zheng ,  Hirofumi Miyajima ,  Hirofumi Kan

发明人： Yujin Zheng ,  Hirofumi Miyajima ,  Hirofumi Kan

IPC分类号： G02B27/14 ,  G02B27/30

CPC分类号： G02B27/0966 ,  G02B19/0014 ,  G02B19/0057 ,  G02B27/09 ,  G02B27/0905 ,  G02B27/1006 ,  G02B27/143 ,  G02B27/145

摘要： An optical condenser device has light sources (10, 20) and an optical combiner (30). Each light source (10, 20) includes a semiconductor laser array stack (12, 22), collimator lenses (16, 26), and beam converters (18, 28). Since the optical combiner (30) combines the beams from one (12) of the stacks and the beams from the other (22), a laser beam with high optical density is generated. The optical combiner (30) has transmitting portions (32) and reflecting portions (34), each of which preferably has a strip-like shape elongated in the layering directions of the stacks (12, 22). In this case, the beams emitted from the active layers (14, 24) will be received and combined appropriately by the optical combiner (30) even if positional deviation of the active layers (14, 24) occurs.

摘要翻译： 光学聚光装置具有光源（10,20）和光学组合器（30）。 每个光源（10,20）包括半导体激光器阵列叠层（12,22），准直透镜（16,26）和光束转换器（18,28）。 由于光学组合器（30）组合来自一个（12）堆叠的光束和来自另一个（22）的光束，因此产生具有高光密度的激光束。 光学组合器（30）具有透光部分（32）和反射部分（34），每个反射部分（34）优选地具有在叠层（12,22）的层叠方向上细长的条状形状。 在这种情况下，即使发生有源层（14,24）的位置偏移，从有源层（14,24）发射的光束将被光组合器（30）适当地接收和组合。

公开(公告)号：US07372877B2

公开(公告)日：2008-05-13

申请号：US10518234

申请日：2003-06-20

申请人： Akira Shirakawa ,  Kenichi Ueda ,  Hirofumi Kan ,  Hirofumi Miyajima

发明人： Akira Shirakawa ,  Kenichi Ueda ,  Hirofumi Kan ,  Hirofumi Miyajima

IPC分类号： H01S3/30

CPC分类号： H01S3/2383 ,  H01S3/067 ,  H01S3/06708

摘要： Fiber laser unit 1 comprises a plurality of fiber lasers 2 and 3 that generate laser beams by exciting a laser active substance inside cores 2a and 3a by exciting light, propagate the laser beams inside the cores 2a and 3a, and output the laser beams from the end portions 2c and 3c, wherein the respective fiber lasers 2 and 3 have resonators 4 and 5 that reflect the laser beams on both ends 2b, 2c, 3b, and 3c thereof and have a structure in which a part of the cores 2a and 3a is reduced in diameter, the diameter reduced portions of the cores 2a and 3a are made proximal to each other, injection synchronization is carried out inside the resonators 4 and 5 by laser beams leaked from the cores 2a and 3a, and a loss is applied to the port of either one of the fiber lasers 2 and 3. According to this fiber laser unit 1, by a simple structure in which the cores 2a and 3a are made proximal to each other and injection synchronization is carried out by using laser beams leaked from the cores 2a and 3a, coherent addition of lasers with extremely high addition efficiency is realized.

摘要翻译： 光纤激光单元1包括多个光纤激光器2和3，其通过激发光激发芯2A和3a内的激光活性物质来产生激光束，并将激光束传播到芯2a和3a内，并输出 来自端部2c和3c的激光束，其中各个光纤激光器2和3具有在两端2b，2c，3b和3c的反射激光束的谐振器4和5，并且具有结构 其中芯部2a和3a的一部分直径减小，芯部2a和3a的直径减小的部分彼此靠近，通过激光束在谐振器4和5内部进行注射同步 从芯部2a和3a泄漏，并且损耗被施加到光纤激光器2和3中的任一个的端口。 根据该光纤激光器单元1，通过使芯2a和3a彼此靠近并且通过使用从芯2a和3a泄漏的激光束进行注射同步的简单结构，将相干添加 实现了极高的附加效率的激光器。