公开(公告)号：US20130056875A1

公开(公告)日：2013-03-07

申请号：US13545046

申请日：2012-07-10

申请人： Youichi NOGAMI ,  Hidetoshi KOYAMA ,  Yoshitsugu YAMAMOTO

发明人： Youichi NOGAMI ,  Hidetoshi KOYAMA ,  Yoshitsugu YAMAMOTO

IPC分类号： H01L23/482 ,  H01L21/768

CPC分类号： H01L23/4855 ,  H01L23/481 ,  H01L23/482 ,  H01L23/4821 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device includes: a semiconductor substrate having a main surface; an electrode in a device region on the main surface; a metal wiring on the main surface and having a first end connected to the electrode; an electrode pad outside the device region and spaced from the metal wiring; an air gap between the main surface and an air gap forming film on the main surface, enveloping the first end of the metal wiring and the electrode, and having a first opening; a resin closing the first opening and covering a second end of the metal wiring; a liquid repellent film facing the air gap and increasing contact angle of the resin, when liquid, relative to contact angles on the semiconductor substrate and the air gap forming film; and a metal film connecting the metal wiring to the electrode pad through a second opening located in the resin.

摘要翻译： 半导体器件包括：具有主表面的半导体衬底; 主表面上的器件区域中的电极; 在主表面上的金属布线，并且具有连接到电极的第一端; 位于器件区域外部并与金属布线间隔开的电极焊盘; 主表面和主表面上的气隙形成膜之间的气隙，包围金属布线和电极的第一端，并具有第一开口; 封闭所述第一开口并覆盖所述金属布线的第二端的树脂; 相对于半导体衬底和气隙形成膜上的接触角，面向气隙的防液膜和当液体相对于树脂的接触角增大时， 以及通过位于树脂中的第二开口将金属布线连接到电极焊盘的金属膜。