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公开(公告)号：US20110006351A1
公开(公告)日：2011-01-13
申请号：US12828328
申请日：2010-07-01
IPC分类号： H01L27/06 , H01L29/78 , H01L27/088
CPC分类号： H01L29/4238 , H01L27/0207 , H01L27/0605 , H01L27/0629 , H01L27/088 , H01L29/0619 , H01L29/402 , H01L29/41758 , H01L29/812
摘要： A semiconductor device includes: a semiconductor substrate; an impurity-doped region at a top surface of the semiconductor substrate; an insulating region located around the impurity-doped region on the top surface of the semiconductor substrate; a gate electrode on the impurity-doped region; a first electrode and a second electrode located on the impurity-doped region, sandwiching the gate electrode; a first pad located on the insulating region and connected to the gate electrode; a second pad facing the first pad across the impurity-doped region, on the insulating region, and connected to the second electrode; and a conductor located between the first electrode and the second pad on the insulating region.
摘要翻译： 半导体器件包括：半导体衬底; 在所述半导体衬底的顶表面处的杂质掺杂区域; 绝缘区域，位于半导体衬底的顶表面上的杂质掺杂区域周围; 杂质掺杂区上的栅电极; 位于所述杂质掺杂区域上的第一电极和第二电极，夹着所述栅电极; 位于所述绝缘区域上并连接到所述栅电极的第一焊盘; 在所述绝缘区域上跨越所述杂质掺杂区域面对所述第一焊盘的第二焊盘，并且连接到所述第二电极; 以及位于绝缘区域上的第一电极和第二焊盘之间的导体。
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公开(公告)号：US07700972B2
公开(公告)日：2010-04-20
申请号：US12143053
申请日：2008-06-20
IPC分类号： H01L29/205 , H01L29/778
CPC分类号： H01L27/0733 , H01L28/40 , H01L29/778
摘要： A semiconductor device comprises an AlN layer, a GaN layer, and an AlGaN layer sequentially formed on a semiconductor substrate. A first opening extends through said GaN layer and said AlGaN layer and exposes part of an upper surface of the AlN layer. A second opening extends through the semiconductor substrate and exposes a part of a lower surface of the AlN layer, in a location facing the first opening. A upper electrode is exposed on an upper surface of the AlN layer in the first opening; and a lower electrode is disposed on a lower surface of the AlN layer in the second opening.
摘要翻译： 半导体器件包括依次形成在半导体衬底上的AlN层，GaN层和AlGaN层。 第一开口延伸穿过所述GaN层和所述AlGaN层并暴露AlN层的上表面的一部分。 第二开口延伸穿过半导体衬底并且在面向第一开口的位置中暴露AlN层的下表面的一部分。 上电极暴露在第一开口中的AlN层的上表面上; 并且下电极设置在第二开口中的AlN层的下表面上。
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公开(公告)号：US07612633B2
公开(公告)日：2009-11-03
申请号：US11748852
申请日：2007-05-15
申请人： Masatake Hangai , Yukinobu Tarui , Tamotsu Nishino , Yoshitsugu Yamamoto , Moriyasu Miyazaki , Yoji Isota
发明人： Masatake Hangai , Yukinobu Tarui , Tamotsu Nishino , Yoshitsugu Yamamoto , Moriyasu Miyazaki , Yoji Isota
CPC分类号： H01P1/15
摘要： The present invention provides a high-frequency switch including: a first switching element connected between a first input/output terminal and a second input/output terminal; a second switching element connected between the second input/output terminal and the first switching element; a high-frequency line provided between the first input/output terminal, the first switching element, and a third input/output terminal; and a third switching element connected between the third input/output terminal, the high-frequency line, and a ground. By connecting the first switching element, the second switching element, the high-frequency line, and the third switching element, because there exists no FET through which a large current flows when a state between the first input/output terminal and the third input/output terminal is set to a transmission state which requires high power handling capability, there is no need to use an FET having a large gate width, which is effective in reducing a loss of the switch.
摘要翻译： 本发明提供一种高频开关，包括：连接在第一输入/输出端子和第二输入/输出端子之间的第一开关元件; 连接在第二输入/输出端子和第一开关元件之间的第二开关元件; 设置在第一输入/输出端子，第一开关元件和第三输入/输出端子之间的高频线; 以及连接在第三输入/输出端子，高频线路和地之间的第三开关元件。 通过连接第一开关元件，第二开关元件，高频线路和第三开关元件，因为当第一输入/输出端子和第三输入/输出端子之间的状态不存在大电流流过的FET时， 输出端子被设置为需要高功率处理能力的传输状态，不需要使用具有大栅极宽度的FET，这有效地减少了开关损耗。
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公开(公告)号：US20080106353A1
公开(公告)日：2008-05-08
申请号：US11748852
申请日：2007-05-15
申请人： Masatake Hangai , Yukinobu Tarui , Tamotsu Nishino , Yoshitsugu Yamamoto , Moriyasu Miyazaki , Yoji Isota
发明人： Masatake Hangai , Yukinobu Tarui , Tamotsu Nishino , Yoshitsugu Yamamoto , Moriyasu Miyazaki , Yoji Isota
IPC分类号： H01P1/15
CPC分类号： H01P1/15
摘要： The present invention provides a high-frequency switch including: a first switching element connected between a first input/output terminal and a second input/output terminal; a second switching element connected between the second input/output terminal and the first switching element; a high-frequency line provided between the first input/output terminal, the first switching element, and a third input/output terminal; and a third switching element connected between the third input/output terminal, the high-frequency line, and a ground. By connecting the first switching element, the second switching element, the high-frequency line, and the third switching element, because there exists no FET through which a large current flows when a state between the first input/output terminal and the third input/output terminal is set to a transmission state which requires high power handling capability, there is no need to use an FET having a large gate width, which is effective in reducing a loss of the switch.
摘要翻译： 本发明提供一种高频开关，包括：第一开关元件，连接在第一输入/输出端子与第二输入/输出端子之间; 连接在第二输入/输出端子和第一开关元件之间的第二开关元件; 设置在第一输入/输出端子，第一开关元件和第三输入/输出端子之间的高频线; 以及连接在第三输入/输出端子，高频线路和地之间的第三开关元件。 通过连接第一开关元件，第二开关元件，高频线路和第三开关元件，因为当第一输入/输出端子和第三输入/输出端子之间的状态不存在大电流流过的FET时， 输出端子被设置为需要高功率处理能力的传输状态，不需要使用具有大栅极宽度的FET，这有效地减少了开关损耗。
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5.发明授权公开(公告)号：US07038768B2
公开(公告)日：2006-05-02
申请号：US10642184
申请日：2003-08-18
CPC分类号： G01J3/4338 , G01J2001/4242 , G01N21/47 , G01N21/6489 , G01N2021/4735
摘要： In a measuring apparatus for a semiconductor multiple layer structure, a spectrometer disperses light from a sample for measurement of the photoluminescence spectrum or disperses probe light to irradiate the sample for the measurement of the reflection spectrum. A controller makes a guide member guide the white light to the spectrometer and acquire electric signals from a first detector for the measurement of the reflection spectrum, and makes the guide member guide the light from the spectrometer to a second detector to acquire electric signals for the measurement of the photoluminescence spectrum.
摘要翻译： 在半导体多层结构的测量装置中，光谱仪从用于测量光致发光光谱的样品中分散光，或者分散探针光以照射样品用于测量反射光谱。 控制器使引导构件将白光引导到光谱仪，并从第一检测器获取用于测量反射光谱的电信号，并且使引导构件将来自光谱仪的光引导到第二检测器，以获取电信号 测量光致发光光谱。
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6.发明授权公开(公告)号：US08878333B2
公开(公告)日：2014-11-04
申请号：US13545046
申请日：2012-07-10
IPC分类号： H01L21/70 , H01L23/482
CPC分类号： H01L23/4855 , H01L23/481 , H01L23/482 , H01L23/4821 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes: a semiconductor substrate having a main surface; an electrode in a device region on the main surface; a metal wiring on the main surface and having a first end connected to the electrode; an electrode pad outside the device region and spaced from the metal wiring; an air gap between the main surface and an air gap forming film on the main surface, enveloping the first end of the metal wiring and the electrode, and having a first opening; a resin closing the first opening and covering a second end of the metal wiring; a liquid repellent film facing the air gap and increasing contact angle of the resin, when liquid, relative to contact angles on the semiconductor substrate and the air gap forming film; and a metal film connecting the metal wiring to the electrode pad through a second opening located in the resin.
摘要翻译： 半导体器件包括：具有主表面的半导体衬底; 主表面上的器件区域中的电极; 在主表面上的金属布线，并且具有连接到电极的第一端; 位于器件区域外部并与金属布线间隔开的电极焊盘; 主表面和主表面上的气隙形成膜之间的气隙，包围金属布线和电极的第一端，并具有第一开口; 封闭所述第一开口并覆盖所述金属布线的第二端的树脂; 相对于半导体衬底和气隙形成膜上的接触角，面向气隙的防液膜和当液体相对于树脂的接触角增大时， 以及通过位于树脂中的第二开口将金属布线连接到电极焊盘的金属膜。
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公开(公告)号：US20130056875A1
公开(公告)日：2013-03-07
申请号：US13545046
申请日：2012-07-10
IPC分类号： H01L23/482 , H01L21/768
CPC分类号： H01L23/4855 , H01L23/481 , H01L23/482 , H01L23/4821 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes: a semiconductor substrate having a main surface; an electrode in a device region on the main surface; a metal wiring on the main surface and having a first end connected to the electrode; an electrode pad outside the device region and spaced from the metal wiring; an air gap between the main surface and an air gap forming film on the main surface, enveloping the first end of the metal wiring and the electrode, and having a first opening; a resin closing the first opening and covering a second end of the metal wiring; a liquid repellent film facing the air gap and increasing contact angle of the resin, when liquid, relative to contact angles on the semiconductor substrate and the air gap forming film; and a metal film connecting the metal wiring to the electrode pad through a second opening located in the resin.
摘要翻译： 半导体器件包括：具有主表面的半导体衬底; 主表面上的器件区域中的电极; 在主表面上的金属布线，并且具有连接到电极的第一端; 位于器件区域外部并与金属布线间隔开的电极焊盘; 主表面和主表面上的气隙形成膜之间的气隙，包围金属布线和电极的第一端，并具有第一开口; 封闭所述第一开口并覆盖所述金属布线的第二端的树脂; 相对于半导体衬底和气隙形成膜上的接触角，面向气隙的防液膜和当液体相对于树脂的接触角增大时， 以及通过位于树脂中的第二开口将金属布线连接到电极焊盘的金属膜。
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公开(公告)号：US20100244041A1
公开(公告)日：2010-09-30
申请号：US12574995
申请日：2009-10-07
IPC分类号： H01L29/778 , H01L29/205 , H01L21/225
CPC分类号： H01L29/7787 , H01L29/0688 , H01L29/155 , H01L29/2003 , H01L29/207 , H01L29/66462
摘要： An isolation layer for suppressing a leakage current is provided at least between a channel layer and a buffer layer formed under the channel layer in the buffer layer.
摘要翻译： 至少在沟道层和形成在缓冲层中的沟道层下方的缓冲层之间提供用于抑制泄漏电流的隔离层。
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公开(公告)号：US20070026594A1
公开(公告)日：2007-02-01
申请号：US11486271
申请日：2006-07-14
IPC分类号： H01L21/8234
CPC分类号： G01N21/31
摘要： A method for evaluating semiconductor layers includes irradiating semiconductor layers on a substrate with light; measuring an optical spectrum peculiar to excitons in the semiconductor layers; and analyzing a broadening factor of optical spectral features of the optical spectrum. The method provides a quick measurement of a surface state of the semiconductor layers with high accuracy.
摘要翻译： 一种用于评估半导体层的方法包括用光照射在衬底上的半导体层; 测量半导体层中激子特有的光谱; 并分析光谱的光谱特征的拓宽因子。 该方法以高精度快速测量半导体层的表面状态。
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10.发明授权公开(公告)号：US06911837B2
公开(公告)日：2005-06-28
申请号：US10893371
申请日：2004-07-19
IPC分类号： H01L21/288 , H01L21/3205 , H01L21/48 , H01L21/66 , H01L23/66 , G01R31/26
CPC分类号： H01L22/22 , H01L21/485 , H01L23/66 , H01L2924/0002 , H01L2924/15173 , H01L2924/00
摘要： The present method includes steps of: discharging a droplet of fluid containing fine particles with electric characteristics from an inkjet nozzle onto the microwave integrated circuit formed on a substrate; forming a coat of the fine particles having electric characteristics on the substrate; measuring electric characteristics of the microwave integrated circuit using a probe of a circuit evaluation apparatus before and after forming the coat; and adjusting the electric characteristics of the microwave integrated circuit, so that forming the coat at a desired location on the upper surface of the circuit substrate by scanning an aim of the inkjet nozzle against the circuit substrate enables the microwave integrated circuit to meet the specification.
摘要翻译： 本方法包括以下步骤：将含有电特性的细颗粒的液滴从喷墨喷嘴喷射到形成在基板上的微波集成电路上; 在基板上形成具有电特性的微粒的涂层; 使用电路评估装置的探针在形成涂层之前和之后测量微波集成电路的电特性; 并且调整微波集成电路的电特性，使得通过将喷墨喷嘴的目标扫过电路基板而在电路基板的上表面上的期望位置处形成涂层，使得微波集成电路能够满足规格。
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